Claims
- 1. A plasma processing method comprising the steps of:
- preparing a substrate holder in a reaction chamber so that a reaction space is defined in the chamber by inside walls of the chamber and a side of the substrate holder carrying a substrate;
- inputting a reactive gas into said reaction space;
- converting said reactive gas into plasma by supplying an electromagnetic energy to said reactive gas;
- evacuating said reaction space during the plasma processing through a gap between the substrate holder and the inside wall of the chamber, wherein said gap is not larger than 1/4 of a wavelength of the inputted electromagnetic energy; and
- treating a surface of the substrate located on said substrate holder with said plasma;
- wherein said plasma is confined in said reaction space, whereby reactive gas in a part of the reaction chamber outside said reaction space has non-plasma form.
- 2. The plasma processing method of claim 1 further comprising the step of exhausting a gas which is not used in plasma processing from said reaction space during the plasma processing.
- 3. The plasma processing method of claim 1 wherein said plasma processing is a chemical vapor deposition.
- 4. The plasma processing method of claim 1 wherein said plasma processing is an etching.
- 5. A plasma processing method comprising the steps of:
- preparing a substrate holder in a reaction chamber;
- inputting a reactive gas into a reaction space of said chamber, said reaction space being defined by at least an inside wall of said reaction chamber and a side of said substrate holder carrying a substrate;
- converting said reaction gas into plasma by supplying an electromagnetic energy to said reactive gas;
- performing a plasma process on the substrate in said reaction space; and
- evacuating said reaction space during the plasma processing through a gap between the substrate holder and the inside wall of the chamber,
- wherein said plasma reverts to a non-plasma gas form when passing through said gap and said gap is not larger than 1/4 of a wavelength of the inputted electromagnetic energy.
- 6. The plasma processing method of claim 5 wherein said plasma processing is a chemical vapor deposition.
- 7. The plasma processing method of claim 5 wherein said plasma processing is an etching.
- 8. A plasma processing method comprising the steps of:
- preparing a substrate holder in a reaction chamber so that a reaction space is defined by at least an inside wall of said chamber and a side of said substrate holder carrying a substrate;
- introducing a reactive gas into the reaction space;
- inducing a magnetic field in said space;
- inputting a microwave into said reaction space to convert said reactive gas to a plasma form; and
- exhausting said gas from said chamber through a gap between said holder and said inside wall of the chamber,
- wherein said plasma is confined in said reaction space as the gas is exhausted, whereby reactive gas in a part of the reaction chamber outside said reaction space has non-plasma form and said gap is not larger than 1/4 of a wavelength of the inputted electromagnetic energy.
- 9. A plasma processing method comprising the steps of:
- preparing a substrate holder in a reaction chamber so that a reaction space is defined by at least an inside wall of said chamber and a side of said substrate holder carrying a substrate;
- introducing a reactive gas into the reaction space;
- inducing a magnetic field in said space;
- inputting a microwave into said reaction space to convert said reactive gas to a plasma form; and
- exhausting a gas from said chamber through a gap between said holder and said inside wall of the chamber,
- wherein said plasma reverts to a non-plasma gas form when passing through said gap and said gap is not larger than 1/4 of a wavelength of the inputted microwave.
- 10. A plasma processing method comprising the steps of:
- preparing a substrate holder in a reaction chamber so that a reaction space is defined by at least an inside wall of said chamber and said substrate holder;
- introducing a reactive gas into the reaction space;
- inducing a magnetic field in said space;
- inputting a microwave into said reaction space; and
- exhausting a gas from said chamber through a gap between said holder and said inside wall of the chamber,
- wherein said gap is not larger than 1/4 of the wavelength of the inputted microwave.
Priority Claims (2)
Number |
Date |
Country |
Kind |
1-152909 |
Jun 1989 |
JPX |
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1-152910 |
Jun 1989 |
JPX |
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Parent Case Info
This is a Divisional application of Ser. No. 07/892,710, filed May 29, 1992 now U.S. Pat. No. 5,302,226, which itself was a continuation of Ser. No. 07/537,300, filed Jun. 13, 1990.
US Referenced Citations (10)
Foreign Referenced Citations (7)
Number |
Date |
Country |
0273741 |
Jul 1988 |
EPX |
0326405 |
Aug 1989 |
EPX |
63-213674 |
Apr 1988 |
JPX |
64064221 |
Jan 1989 |
JPX |
01100263 |
Sep 1989 |
JPX |
02068900 |
Mar 1990 |
JPX |
02112232 |
Apr 1990 |
JPX |
Non-Patent Literature Citations (2)
Entry |
"The American Heritage Dictionary of the English Language"; .circleincircle. 1969, ISBN 395-09066-0, p. 829. |
"The Relationship Between Surface Potential and Etching Characteristics With ECR Plasma"; Fujiwara et al.; 1988 Dry Process Symposium; pp. 9-14. |
Divisions (1)
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Number |
Date |
Country |
Parent |
892710 |
May 1992 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
537300 |
Jun 1990 |
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