This application is a 371 application of the international PCT application serial no. PCT/JP2013/062560, filed on Apr. 30, 2013. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
Field of the Invention
The invention relates to an arc evaporation source used in an arc ion plating device.
Description of Related Art
For film formation of a ceramic hard film on a substrate, conventionally, an arc ion plating method using an arc ion plating device for evaporating and ionizing a cathode material of an arc evaporation source by arc discharge in a vacuum is commonly used for film formation on a surface of the substrate (work) (for example, patent documents 1 and 2).
An example of the arc evaporation source used in this type of arc ion plating method is illustrated in
Arc spots are formed on the discharge surface of the cathode 1 sequentially by arc discharge such that the cathode material evaporates; however, the arc spots have a tendency to move in an acute angle direction relative to the magnetic field.
Therefore, in
In addition, as shown in
However, in this case, since the outer circumference of the cathode 1 is covered by the confinement ring 5, the outer circumference of the discharge surface is not able to be used to the fullest and interferes with the effective utilization of the cathode material.
That is to say, as shown in
V2=V1×(D2÷D1)
and since D2>D1, it may be seen that the outer circumference may be used to the fullest and a larger volume of the cathode material may be used, so as to be utilized effectively.
Patent Document 1: Japanese Patent No. 3924833
Patent Document 2: Japanese Published Unexamined Application No. 2009-543951
An objective of the invention is to provide an arc evaporation source which may significantly increase the utilization efficiency of a cathode material which has a configuration that an entirety or a part of the outer circumferential surface is exposed, by using the outer circumference of the cathode to the fullest.
According to an embodiment, the invention provides an arc evaporation source for melting and evaporating a cathode material by arc discharge in a vacuum for film formation on a surface of a substrate. The arc evaporation source includes a cathode formed in a substantially disc shape, and a magnetic field generating apparatus disposed at a back side of the cathode, wherein the magnetic field generating apparatus generates a magnetic field which forms magnetic lines that form an acute angle with respect to a substrate direction at an outer circumferential surface of the cathode, magnetic lines that are substantially perpendicular to a discharge surface at an outermost circumference part of the discharge surface of the cathode, and magnetic lines that form an acute angle with respect to a center direction of the cathode at a region towards the outer circumferential surface of the discharge surface of the cathode, by at least one permanent magnet disposed at a back surface of the cathode such that the magnetic poles are oriented in a direction that is 20° to 50° with respect to the discharge surface of the cathode.
As a result of various considerations and experimentation, the inventors have been led to think that by utilizing the tendency of the arc spots to move in an acute angle direction relative to the magnetic field, when a magnetic field is generated which forms magnetic lines that form an acute angle with respect to the substrate direction at the outer circumferential surface of the cathode, magnetic lines that are substantially perpendicular to the discharge surface at the outermost circumference part of the cathode discharge surface, and magnetic lines that form an acute angle with respect to the center direction of the cathode at the region towards the outer circumferential surface of the cathode discharge surface as shown by the 3 arrows in
More specifically, as shown in
Next, the inventors considered specific magnetic field generating apparatus for forming the above mentioned magnetic field through magnetic field simulations.
First, as shown in
Next, as shown in
However, in this type of case, due to the configuration where the ring shaped permanent magnet occupies a large part of the space at the back surface of the cathode, a further modification which is later mentioned such as “one other magnetic field generating apparatus” is unable to be included, and the effective utilization of the cathode material is limited. Or, there is a possibility the cathode may become larger than necessary.
Therefore, the inventors determined that the 3 magnetic lines as shown in
Based on this idea, the inventors considered the magnetic fields formed when the angle formed by the direction of the magnetic poles and the discharge surface is changed from 0° to 90, as shown in
That is to say, when the angle formed by the direction of the magnetic poles and the discharge surface is under 20°, as shown in
Accordingly, from the above mentioned results, it was determined that the preferable angle is 40° to 45°.
That is to say, according to an embodiment of the invention, in the arc evaporation source, the permanent magnet is disposed such that the magnetic poles are oriented in a direction that is 40° to 45° with respect to the discharge surface of the cathode.
Next, according to an embodiment of the invention, in the arc evaporation source, at least one other magnetic field generating apparatus which rotates in a plane substantially parallel to the discharge surface of the cathode is disposed at the back side of the cathode.
In view of the forgoing findings, the inventors then considered preferable magnetic field generating apparatus to be disposed at the larger space ensured at the back surface of the cathode.
As a result, it was determined that by disposing a magnetic field generating apparatus rotating in a plane approximately parallel to the discharge surface of the cathode in the space, the discharge area becomes larger when the arc spots rotate and move in the discharge surface of the cathode due to the effect of the rotating magnetic field as shown in
Furthermore, it is preferable that the rotation of the above mentioned magnetic field generating apparatus is performed without interfering with the arc discharge process.
Then, according to an embodiment of the invention, in the arc evaporation source, at least one magnetic field generating apparatus with a displacement apparatus such that a distance between the permanent magnet and the cathode may be changed, is disposed at the back side of the cathode.
According to considerations by the inventors, it was determined that the utilization efficiency of the cathode material is further increased by disposing a magnetic field generating apparatus with a displacement apparatus such that it is possible to change the distance between the permanent magnet and the cathode, for example, such as the magnetic field generating apparatus wherein a displacement apparatus is disposed on the ring shaped permanent magnet having opposite polarities at the inside and outside of the radius direction as shown in
That is to say, by changing the distance between the permanent magnet and the cathode, the diameter of the discharge area where the arc spot moves on the discharge surface of the cathode may be changed as shown in
Furthermore, similar to the rotation of the above mentioned magnetic field generating apparatus, it is preferable that the movement of the magnetic field generating apparatus is performed without interfering with the arc discharge process.
The invention provides an arc evaporation source which significantly increases the utilization efficiency of a cathode material which has a configuration where an entirety or a part of the outer circumferential surface is exposed by using the external circumference of the cathode to the fullest.
The invention will be described in detail according to the embodiments below.
An arc evaporation source of embodiment 1 was manufactured by disposing a permanent magnet 4 (configured by lining 45 pillar shaped isotropic ferrite magnets (diameter of 8 mm, thickness of 2 mm) into a ring shape at a 45° direction relative to the discharge surface of the cathode 1) at a back side of a cathode 1 machined into the shape shown in
In addition, as for the magnet, a ring shaped magnet magnetized in a slanted direction may be used, or a cube shaped magnet may be disposed to be aligned slanted on the circumference, for example.
An arc evaporation source of embodiment 2 was manufactured similar to embodiment 1 except for that a magnetic field generating apparatus, constructed by a ring shaped permanent magnet (a neodymium magnet with thickness of 2 mm, outer diameter of 46 mm and inner diameter of 31 mm, wherein the magnetic poles are oriented at the outside and inside direction) mounted on a rotating platform such that the center axis of the rotating platform and a center axis of the ring shaped permanent magnet are displaced, is disposed in the space of the back side of the cathode as shown in
An arc evaporation source of embodiment 3 is manufactured similar to embodiment 1 except for that a magnetic field generating apparatus with a displacement apparatus using the same ring shaped permanent magnet as embodiment 2 is disposed in the space of the back surface of the cathode as shown in
The displacement apparatus is constructed by an electric actuator, and the permanent magnet is movable in the range of 50 mm in the vertical direction as shown in
When the arc spots circulate around the vicinity of the center of the discharge surface of the cathode, the arc spots need to stay for a short period of time since the cathode is consumed quickly due to the short circumference length. Therefore, the movement of the magnet is made to be a patterned movement as shown in
An arc evaporation source of comparison example 1 is manufactured by disposing a permanent magnet 4 at a back surface of a cathode 1 which is machined into the bank shape shown in
An arc evaporation source of comparison example 2 is manufactured by disposing a permanent magnet 4 at a back side of a cathode 1 which is machined into the shape shown in
Arc evaporation sources of embodiments 4 to 6 and comparison examples 3 and 4 are manufactured similar to embodiments 1 to 3 and comparison examples 1 and 2 respectively, except for using TiAl (50:50 atm %) as the cathode material.
Arc evaporation sources of embodiments 7 to 9 and comparison examples 5, 6 are manufactured similar to embodiments 1 to 3 and comparison examples 1 and 2 respectively, except for using AlCr (70:30 atm %) as the cathode material.
Arc evaporation sources of embodiments 10 to 12 and comparison examples 7 and 8 are manufactured similar to embodiments 1 to 3 and comparison examples 1 and 2 respectively, except for using Cr as the cathode material.
Each arc evaporation source was assembled to an ion plating device, and then sufficient vacuuming as well as out gassing by heater heating was performed, and 500 ccm of nitrogen gas was introduced and the pressure in the chamber was set to each of the pressures shown in TABLE 1.
For the substrate, a test piece of a high speed tool steel (SKH-51) is used and each of the bias voltages shown in Table 1 is applied, then a trigger mechanism (not shown) is used to start arc discharge of each of the cathodes, and arc currents shown in TABLE 1 are fed respectively and a 180 minute coating process is carried out. The film type, film thickness, film hardness, and surface roughness Rz of each of the obtained films are shown in TABLE 1.
Then, film formation is repeated until the film thickness reduces to 70% of the film thickness obtained by the first film formation, and the number of batches up until then is measured. That is to say, when the film thickness drops below 70%, there is not sufficient film thickness, and there is a possibility that the performance of the tools and mold which are the substrate (work) has decreased. It should be noted, as a counter measure, it is possible to extend the coating time in response to the reduction of the film thickness; however, due to difficulty of management it is not ideal. Therefore, the 70% point was set as the life span of the cathode. Results are shown in TABLE 1.
A relationship of the number of batches of film formation and the film thickness in the case of embodiments 1 to 3 and comparison examples 1 and 2 are shown in
It is known from TABLE 1 that, in the case of any cathode material, the embodiments have an increase in the number of batches and the expensive cathode material can be used effectively by adopting the invention, compared to the comparison examples.
Furthermore, referring to
In addition, in embodiments 2 and 3, the surface roughness of the film is also reduced, and it is thought to be due to the arc spots being forcibly moved by the rotation and movements of the magnet.
Furthermore, results such as the above are the same in other embodiments where the cathode material is different.
Embodiments of the invention were described above. However, the invention is not limited to the above mentioned embodiments. Various modifications can be made to the above mentioned embodiments within the same or equivalent range of the invention.
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/JP2013/062560 | 4/30/2013 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2014/178100 | 11/6/2014 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
20110259733 | Watanabe | Oct 2011 | A1 |
20110315544 | Goikoetxea Larrinaga | Dec 2011 | A1 |
20120261253 | Madocks | Oct 2012 | A1 |
Number | Date | Country |
---|---|---|
2000-212729 | Aug 2000 | JP |
2004-527662 | Sep 2004 | JP |
2007-056347 | Mar 2007 | JP |
3924833 | Jun 2007 | JP |
2009-543951 | Dec 2009 | JP |
2012-517522 | Aug 2012 | JP |
2013-023741 | Feb 2013 | JP |
Entry |
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“Office Action of China Counterpart Application”, with machine English translation thereof, dated Aug. 31, 2016, p. 1-p. 10. |
“International Search Report (Form PCT/ISA/210)”, dated Jul. 9, 2013, with English translation thereof, pp. 1-4, in which five of the listed references (JP2013-023741, JP2007-056347, JP2004-527662, JP2000-212729 and JP2012-517522) were cited. |
Number | Date | Country | |
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20160086770 A1 | Mar 2016 | US |