Claims
- 1. A method for fabricating a dielectric film having low-k values on a semiconductor or integrated circuit surface comprising applying to said surface an asymmetric organocyclosiloxane compound, wherein said compound reacts with and deposits on said surface said dielectric film.
- 2. The method as claimed in claim 1 wherein said asymmetric organocyclosiloxane compound has the formula:
- 3. The method as claimed in claim 2 wherein R and R′ are linked together to form a cyclic alkyl group.
- 4. The method as claimed in claim 2 wherein said asymmetric organocyclosiloxane compound is selected from the group consisting of 2-vinyl-2,4,4,6,6-pentamethylcyclotrisiloxane, 2-vinyl-4,4,6,6-tetramethylcyclotrisiloxane, 2-vinyl-2,4,6-trimethylcyclotrisiloxane, 2-vinyl-4,6-dimethylcyclotrisiloxane, 2,6-divinyl-4,4-dimethylcyclotrisiloxane, 2,6-divinyl-4-methylcyclotrisiloxane, 2-cyclohexyl-2,4,4,6,6-pentamethylcyclotrisiloxane, 2-cyclohexyl-4,6-dimethylcyclotrisiloxane, 2-cyclopentamethylene-4,4,6,6-tetramethyltrisiloxane, 2-cyclopentamethylene-4,6-dimethyltrisiloxane, 2-cyclotetramethylene-4,4,6,6-tetramethyltrisiloxane, and 2-cyclotetramethylene-4,6-dimethyltrisiloxane.
- 5. The method as claimed in claim 1 wherein said dielectric film has a k value below 2.5.
- 6. The method as claimed in claim 4 wherein said dielectric film has a k value in the range of about 2.0 to about 2.5.
- 7. The method as claimed in claim 1 wherein said asymmetric organocyclosiloxane compound precursor is deposited on the surface of the semiconductor or integrated circuit using chemical vapor deposition.
- 8. The method as claimed in claim 6 wherein said chemical vapor deposition is pyrolitic or plasma-assisted.
- 9. The method as claimed in claim 7 wherein said precursor is in either the vapor phase or the liquid phase prior to deposition.
- 10. The method as claimed in claim 7 wherein said precursor is a single precursor that contains silicon, carbon, oxygen, and hydrogen atoms.
- 11. The method as claimed in claim 1 further comprising applying said precursor with a purge or plasma gas.
- 12. The method as claimed in claim 1 where said surface is no more than 300 millimeters in diameter.
- 13. The method as claimed in claim 1 further applying an oxygen-containing precursor to said surface.
- 14. The method as claimed in claim 13 wherein said oxygen-containing precursor is O2 or N2O.
- 15. A method for fabricating a dielectric film having low-k values on a semiconductor or integrated circuit surface comprising applying to said surface 2-vinyl-2,4,4,6,6-pentamethylcyclotrisiloxane, wherein said 2-vinyl-2,4,4,6,6-pentamethylcyclotrisiloxane reacts with and deposits on said surface said dielectric film.
- 16. The method as claimed in claim 15 wherein said dielectric film has a k value below 2.5.
- 17. The method as claimed in claim 16 wherein said dielectric film has a k value in the range of about 2.0 to about 2.5.
- 18. The method as claimed in claim 15 wherein said 2-vinyl-2,4,4,6,6-pentamethylcyclotrisiloxane is deposited on the surface of the semiconductor or integrated circuit using chemical vapor deposition.
- 19. The method as claimed in claim 18 wherein said chemical vapor deposition is pyrolitic or plasma-assisted.
Parent Case Info
[0001] This application claims priority from Provisional Patent Application Serial No. 60/261,451 filed Jan. 12, 2001.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60261451 |
Jan 2001 |
US |