Claims
- 1. The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising:
- an active region on a substrate;
- a first dielectric layer disposed over the active region and having a first opening therethrough exposing a portion of the active region;
- a landing pad disposed over the exposed portion of the active region and a portion of the first dielectric layer wherein the landing pad comprises a metal/silicide composite bilayer overlying a polysilicon layer;
- a second dielectric layer disposed over the landing pad and a portion of the first dielectric layer, wherein the second dielectric layer has a second opening therethrough exposing a portion of the landing pad; and
- a conductive layer disposed in the second opening and over a portion of the second dielectric layer.
- 2. The structure of claim 1, wherein the active region is a shared contact in an upper portion of the substrate.
- 3. The structure of claim 1, wherein the metal/silicide composite layer further comprises a refractory metal silicide over a refractory metal barrier layer.
- 4. The structure of claim 1, wherein the metal/silicide composite layer further comprises a refractory metal barrier layer over a refractory metal silicide layer.
- 5. The structure of claim 1, wherein the first dielectric layer comprises oxide.
- 6. The structure of claim 1, wherein the first dielectric layer has a thickness of about 500 to 2000 angstroms.
- 7. The structure of claim 1, wherein the second dielectric layer has a thickness of about 6000 to 12000 angstroms.
- 8. The structure of claim 1, wherein the conductive layer comprises an aluminum alloy.
Parent Case Info
This is a Division, of application Ser. No. 08/251,025, filed May 31, 1994 now U.S. Pat. No. 5,633,196.
US Referenced Citations (29)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0 369 336 A3 |
May 1990 |
EPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
251025 |
May 1994 |
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