Claims
- 1. to 27. (Canceled)
- 28. An electron multiplier comprising:
a glass wafer having an input surface, an output surface, and a plurality of channels extending through said glass wafer from the input surface to the output surface, each of said plurality of channels being having been processed to provide electrical conduction and secondary electron emission; and a coating formed on the input surface of the glass wafer for enhancing the ability of the electron multiplier to convert an ion incident thereon into electrons.
- 29. An electron multiplier as set forth in claim 28 wherein the coating is selected from the group consisting of aluminum oxide (Al2O3), magnesium oxide (MgO), tin oxide (SnO2), quartz (SiO2), barium fluoride (BaF2), rubidium tin (Rb3Sn), beryllium oxide (BeO), diamond, and combinations thereof.
- 30. An electron multiplier as set forth in claim 28 wherein the coating extends into each of the plurality of channels.
- 31. An electron multiplier as set forth in claim 30 wherein the coating extends into each channel to a depth such that the first strike conversion capability to convert an ion to electrons is enhanced.
- 32. An electron multiplier as set forth in claim 28 further comprising a first thin metal electrode formed on the input surface of the glass wafer and a second thin metal electrode formed on the output surface of the glass wafer.
- 33. An electron multiplier as set forth in claim 32 wherein the thin metal electrode is formed from an INCONEL alloy or a NICHROME alloy.
- 34. An electron multiplier as set forth in claim 28 wherein each of the plurality of channels extends at an angle relative to the normal flight trajectory of an ion between the input surface and the output surface.
- 35. An electron multiplier comprising:
a microchannel plate; and a coating formed on an input surface of the microchannel plate for enhancing the ability of the electron multiplier to convert an ion incident thereon into electrons.
- 36. An electron multiplier as set forth in claim 34 wherein the coating is selected from the group consisting of aluminum oxide (Al2O3), magnesium oxide (MgO), tin oxide (SnO2), quartz (SiO2), barium fluoride (BaF2), rubidium tin (Rb3Sn), beryllium oxide (BeO), diamond, and combinations thereof.
- 37. An electron multiplier as set forth in claim 34 wherein the coating extends into each channel of a plurality of channels formed in the microchannel plate.
- 38. An electron multiplier as set forth in claim 37 wherein the coating extends into each channel to a depth such that the first strike conversion capability to convert an ion to electrons is enhanced.
- 39. A method of making an electron multiplier comprising the steps of:
forming a glass wafer having a plurality of channels extending from an input surface of the glass wafer to an output surface thereof; each of said channels having a surface; processing the surfaces of said channels to produce conductive and secondary electron emissive properties; and depositing a coating on the input surface of the glass wafer such that the coating contacts each of said plurality of channels, said coating being formed of a material that provides enhancement of the conversion of ions into electrons by the electron multiplier.
- 40. A method as set forth in claim 39 wherein the step of depositing the coating comprises the step of providing a material selected from the group consisting of aluminum oxide (Al2O3), magnesium oxide (MgO), tin oxide (SnO2), quartz (SiO2), barium fluoride (BaF2), rubidium tin (Rb3Sn), beryllium oxide (BeO), diamond, and combinations thereof as the coating.
- 41. A method as set forth in claim 39 wherein the step of depositing the coating comprises the step of applying the coating such that it extends into each of the plurality of channels.
- 42. A method as set forth in claim 41 wherein the step of depositing the coating comprises the step of applying the coating such that it extends into each channel to a depth such that the first strike conversion capability to convert an ion to electrons is enhanced.
- 43. A method as set forth in claim 39 further comprising the steps of forming a first thin metal electrode on the input surface of the glass wafer and forming a second thin metal electrode on the output surface of the glass wafer.
- 44. A method as set forth in claim 43 wherein the first and second metal electrodes are formed of an INCONEL alloy or a NICHROME alloy.
- 45. A method as set forth in claim 40 wherein the step of forming the first thin metal electrode comprises the step of vacuum depositing the first thin metal electrode on the input surface and the step of forming the second metal electrode comprises the step of vacuum depositing the second thin metal electrode on the output surface.
- 46. A method as set forth in claim 39 wherein the step of forming the glass wafer comprises the step of forming each of the plurality of channels to extend at an angle relative to the normal flight trajectory of an ion between the input surface and the output surface.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This Application incorporates and claims the benefit of U.S. Provisional Application Serial No. 60/189,894, filed Mar. 16, 2000, by Kevin Owens et al., entitled Bipolar Time of Flight Detector.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60189894 |
Mar 2000 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
09809090 |
Mar 2001 |
US |
Child |
10847565 |
May 2004 |
US |