Patent Grant
11081463
This application claims priority from French Patent Application No. 18 60395 filed on Nov. 9, 2018. The content of this application is incorporated herein by reference in its entirety.
The field of the invention is that of the direct bonding of substrates. The invention more particularly relates to direct bonding capable of being obtained at ambient temperature and not requiring post-bonding annealing in order to increase the bonding energy.
The direct bonding technique consists of placing sufficiently clean and smooth surfaces in intimate contact with one another so that adhesion therebetween can take place. Substrates can thus be assembled without the provision of additional material, and in particular without adhesive.
Although numerous surface preparation and bonding techniques exist in the field of direct bonding, generally speaking an annealing step is always required after the bonding step at ambient temperature, in order to increase the adhesion energy of the surfaces placed in contact with one another.
However, the surface activated bonding technique (known as SAB), allows an adhesion energy to be obtained at a temperature as low as ambient temperature. This technique consists of bombarding the surfaces to be bonded by ions, for example argon ions, under a high vacuum. Ion bombardment allows the surface oxide to be removed as well as the organic contaminants. The high vacuum prevents the surface oxide from reforming.
This technique works very well with semi-conductive materials such as silicon or germanium, since ion bombardment allows the surface contaminants and native oxide to be removed, while leaving dangling bonds at the surface, which enable a very high adhesion to be obtained without thermal annealing. However, as a result of the activation, argon ions are implanted in the surface and damage the crystal lattice which leads to superficial amorphization.
In order to reduce the amorphous layer generated by the activation, it has been proposed to use atoms that are smaller than argon, such as helium. However, the stripping of the surface to obtain the dangling bonds thus becomes less effective. The current tendency is to use atoms that are heavier than argon, such as neon for example, or even to use atom clusters for the GCIB (Gas Cluster Ion Beam) technique. However, the aforementioned technique does not enable a large surface to be treated, such as that of a substrate having a diameter of 200 mm, within a reasonable period of time.
The purpose of the invention is to propose a direct bonding technique which, similarly to SAB, does not require post-bonding reinforcing annealing and which, unlike SAB, does not lead to the formation of an amorphous layer.
For this purpose, the invention proposes a method for directly bonding a first and a second substrate, comprising:
Some preferred, however non-limiting aspects of this method are as follows:
Other aspects, purposes, advantages and features of the invention will be better understood upon reading the following detailed description given of the non-limiting preferred embodiments of the invention, provided for illustration purposes.
The invention relates to a method for directly bonding a first and a second substrate. The substrates can be made of a semi-conductive material, for example silicon or germanium.
The method according to the invention preferably comprises a prior step of cleaning the first and second substrates in order to remove any potential organic or particulate contaminations.
This method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, each whereof has been stripped of the respective oxide layer thereof. The removal step can be carried out chemically. The removal and passivation steps can be carried out simultaneously, for example using a solution of hydrofluoric acid. Alternatively, the removal and passivation steps can be carried out sequentially, for example by performing the removal step by high-temperature annealing (generally at more than 700° C.) under an ultra-high vacuum and by performing passivation with hydrogen partial pressure (generally at more than 0.01 mbar).
After removal and passivation, each of the substrates is placed in a desorption chamber of a vacuum enclosure, generally at less than 10−6 mbar and preferably at less than 10−8 mbar. The method is continued by carrying out, in each of the desorption chambers, electron impact hydrogen desorption on the bonding face of a substrate. The bonding face of each of the substrates is thus subjected to electron bombardment according to the so-called ESD (Electron Stimulated Desorption) technique, in order to remove the hydrogen atoms and leave dangling bonds allowing for a subsequent high-energy bonding.
During the electron impact hydrogen desorption step, each of the first and second substrates can be arranged on an electrically conducting support. In this way, charge problems that may arise during the treatment of a surface having a large surface area since the electrons cannot be neutralised, can be resolved. In one possible embodiment, which is advantageously applied for substrates of the SeOI (Semiconductor On Insulator) type, an electrical contact connects the bonding face of a substrate to the support thereof.
During electron impact hydrogen desorption on a bonding face, an electron beam can bombard the bonding face in order to reach a bombardment dose of 1014 to 1019 electrons/cm2, preferably 1014 to 1018 electrons/cm2. The energy of the electrons can lie in the range 0.01 to 100 kEv, preferably 0.1 to 10 keV, and the intensity thereof can lie in the range 0.01 to 1,000 μA/cm2, preferably 1 to 100 μA/cm2. If the beam is not wide enough to cover all of the bonding face, it is swept such that the electron impact covers the entirety of the bonding face. If required in order to reach the dose of interest, sweeping by the electron beam is carried out so as to irradiate the entire bonding face a plurality of times. For the purposes of illustration, the dose of interest can be reached in less than 5 minutes.
After the ESD treatment of the bonding face of each of the substrates, the substrates are transferred to a bonding chamber inside the vacuum enclosure. The method then comprises the placement of the bonding faces in intimate contact with one another. The bonding faces placed in intimate contact with one another are preferably maintained under pressure, for example at a pressure ranging from 0.01 to 5 MPa, preferably at a pressure ranging from 0.1 to 1 MPa, and for a duration that generally lies in the range 5 seconds to 60 minutes, preferentially 1 minute. The assembly formed by the two substrates bonded by way of the bonding faces is then removed from the vacuum chamber.
One example method of implementing the method according to the invention is as follows. Two silicon substrates, of orientation <001>, measuring 200 mm in diameter, 725 μm in thickness and having a resistivity of 10 ohm/cm are cleaned using a solution of deionised water to which is added 30 ppm ozone, followed by cleaning using an SC1 (“Standard Clean 1”) solution composed of a deionised water, ammonia and hydrogen peroxide base in the proportions 5:1:1. The substrates are subjected to deoxidation with a solution having a HF 1% base which causes hydrogen passivation of the bonding faces. After rinsing with deionised water and drying, each of the two substrates is placed in a chamber under an ultra-high vacuum at 10−8 mbar, where they are each arranged on an earthed conductive substrate holder.
A 1 cm2 electron beam sweeps the surface of each of the substrates at a speed of 10 cm per second. The entire surface is swept in approximately 40 seconds. The energy of the electron beam is 10 kEv and the intensity thereof is 200 μA. By sweeping the surface of each of the substrates 10 times, a dose of approximately 1015 electrons/cm2 is obtained. After the ESD treatment of the two substrates carried out simultaneously in the two chambers, the substrates are transferred to a bonding chamber. The two treated faces are placed facing one another and are brought into contact with one another. A force of 0.2 MPa is applied for 1 minute. The assembly generated by the bonding is then removed from the ultra-high vacuum chamber.
| Number | Date | Country | Kind |
|---|---|---|---|
| 1860395 | Nov 2018 | FR | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 20030141502 | Tong | Jul 2003 | A1 |
| 20070117258 | Moriceau et al. | May 2007 | A1 |
| 20090162991 | Beneyton et al. | Jun 2009 | A1 |
| 20120088352 | Beneyton et al. | Apr 2012 | A1 |
| 20130075365 | Fournel et al. | Mar 2013 | A1 |
| 20130175643 | Berthelot et al. | Jul 2013 | A1 |
| 20130181302 | Giroud et al. | Jul 2013 | A1 |
| 20130187276 | Ernst et al. | Jul 2013 | A1 |
| 20140014618 | Fournel et al. | Jan 2014 | A1 |
| 20140295606 | Larrey et al. | Oct 2014 | A1 |
| 20150179474 | Maitrejean et al. | Jun 2015 | A1 |
| 20150179665 | Reboh et al. | Jun 2015 | A1 |
| 20160005862 | Reboh et al. | Jan 2016 | A1 |
| 20160071933 | Maitrejean et al. | Mar 2016 | A1 |
| 20160254362 | Maitrejean et al. | Sep 2016 | A1 |
| 20170076944 | Augendre et al. | Mar 2017 | A1 |
| 20170141212 | Barraud et al. | May 2017 | A1 |
| 20170263495 | Augendre et al. | Sep 2017 | A1 |
| 20170263607 | Maitrejean et al. | Sep 2017 | A1 |
| 20180158719 | Fournel et al. | Jun 2018 | A1 |
| 20180218997 | Fournel et al. | Aug 2018 | A1 |
| 20180358261 | Beche et al. | Dec 2018 | A1 |
| Entry |
|---|
| Search Report for French Application No. FR1860395 dated May 2, 2019. |
| Takagi, H. et al. “Surface activated bonding of silicon wafers at room temperature” IN: Applied Physics Letters, Apr. 15, 1996, vol. 68, No. 16, pp. 2222-2224. |
| Specification and drawings for U.S. Appl. No. 16/578,737 entitled “Substrate Stripping Method by Transfer of a Thermoplastic Polymer Surface Film”, filed Sep. 23, 2019. |
| Specification and drawings for U.S. Appl. No. 16/570,296 entitled “Temporary Bonding Method with Thermoplastic Adhesive Incorporating a Rigid Ring”, filed Sep. 13, 2019. |
| Number | Date | Country | |
|---|---|---|---|
| 20200152597 A1 | May 2020 | US |
