Claims
- 1. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
5Boric acid 2-17%At least one amine35-70%Water20-45%
- 2. A cleaning formulation as described in claim 1 further including a glycol solvent having a percentage by weight range of 0-5%.
- 3. A cleaning formulation as described in claim 1 further including a chelating agent having a percentage by weight range of 0-17%.
- 4. A cleaning formulation as described in claim 2 further including a chelating agent having a percentage by weight range of 0-17%.
- 5. A cleaning formulation as described in claim 1 wherein said amine is selected from the group consisting of:
Monoethanolamine (MEA) Triethanolamine (TEA)
- 6. A cleaning formulation as described in claim 2 wherein said amine is selected from the group consisting of:
Monoethanolamine (MEA) Triethanolamine (TEA)
- 7. A cleaning formulation as described in claim 3 wherein said amine is selected from the group consisting of:
Monoethanolamine (MEA) Triethanolamine (TEA)
- 8. A cleaning formulation as described in claim 4 wherein said amine is selected from the group consisting of:
Monoethanolamine (MEA) Triethanolamine (TEA)
- 9. A cleaning formulation as described in claim 3 wherein said chelating agent is selected from the group consisting of:
Catechol Lactic acid Acetoacetamide Salicylaldehyde
- 10. A cleaning formulation as described in claim 4 wherein said chelating agent is selected from the group consisting of:
Catechol Lactic acid Acetoacetamide Salicylaldehyde
- 11. A cleaning formulation as described in claim 1 further including one or more of the compounds selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
- 12. A cleaning formulation as described in claim 9 comprising:
6Boric acid17%Monoethanolamine45%Water32%Catechol 6%
- 13. A cleaning formulation as described in claim 9 comprising:
7Boric acid15%Monoethanolamine43%Water34.8%Lactic acid 6.2%
- 14. A cleaning formulation as described in claim 9 comprising:
8Boric acid10%Triethanolamine38%Water35%Acetoacetamide17%
- 15. A cleaning formulation as described in claim 9 comprising:
9Boric acid15%Monoethanolamine35%Water35%Salicylaldehyde15%
- 16. A cleaning formulation as described in claim 1 comprising:
10Boric acid15%Monoethanolamine40%Water45%
- 17. A cleaning formulation as described in claim 5 comprising:
11Boric acid12%Monoethanolamine45%Triethanolamine10%Water33%
- 18. A cleaning formulation as described in claim 6 comprising:
12Boric acid17%Monoethanolamine40%Water38%Ethylene glycol5%
- 19. A method for fabricating a semiconductor wafer including the steps comprising:
plasma etching a metalized layer from a surface of the wafer; plasma ashing a resist from the surface of the wafer following the metal etching step; cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown:
13Boric acid 2-17%At least one amine35-70%Water20-45%
- 20. A method as described in claim 19 further including a glycol solvent having a percentage by weight range of 0-5%.
- 21. A method as described in claim 19 further including a chelating agent having a percentage by weight range of 0-17%.
- 22. A method as described in claim 20 further including a chelating agent having a percentage by weight range of 0-17%.
- 23. A method as described in claim 19 wherein said amine is selected from the group consisting of:
Monoethanolamine (MEA) Triethanolamine (TEA)
- 24. A method as described in claim 20 wherein said amine is selected from the group consisting of:
Monoethanolamine (MEA) Triethanolamine (TEA)
- 25. A method as described in claim 21 wherein said amine is selected from the group consisting of:
Monoethanolamine (MEA) Triethanolamine (TEA)
- 26. A method as described in claim 22 wherein said amine is selected from the group consisting of:
Monoethanolamine (MEA) Triethanolamine (TEA)
- 27. A method as described in claim 21 wherein said chelating agent is selected from the group consisting of:
Catechol Lactic acid Acetoacetamide Salicylaldehyde
- 28. A method as described in claim 22 wherein said chelating agent is selected from the group consisting of:
Catechol Lactic acid Acetoacetamide Salicylaldehyde
- 29. A method as described in claim 19 further including one or more of the compounds selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
- 30. A method for fabricating a semiconductor wafer as described in claim 25, including the following components in the percentage by weight ranges shown:
14Boric acid17%Monoethanolamine45%Water32%Catechol6%
- 31. A method for fabricating a semiconductor wafer as described in claim 25, including the following components in the percentage by weight ranges shown:
15Boric acid 15%Monoethanolamine 43%Water34.8%Lactic acid 6.2%
- 32. A method for fabricating a semiconductor wafer as described in claim 25, including the following components in the percentage by weight ranges shown:
16Boric acid10%Triethanolamine38%Water35%Acetoacetamide17%
- 33. A method for fabricating a semiconductor wafer as described in claim 25, including the following components in the percentage by weight ranges shown:
17Boric acid15%Monoethanolamine35%Water35%Salicylaldehyde15%
- 34. A method for fabricating a semiconductor wafer as described in claim 23, including the following components in the percentage by weight ranges shown:
18Boric acid15%Monoethanolamine40%Water45%
- 35. A method for fabricating a semiconductor wafer as described in claim 23, including the following components in the percentage by weight ranges shown:
19Boric acid12%Monoethanolamine45%Triethanolamine10%Water33%
- 36. A method for fabricating a semiconductor wafer as described in claim 24, including the following components in the percentage by weight ranges shown:
20Boric acid17%Monoethanolamine40%Water38%Ethylene glycol5%
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of pending U.S. patent application Ser. No. 09/312,933 filed May 17, 1999 which claims priority to U.S. provisional application Ser. No. 60/085,879, filed May 18, 1998.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60085879 |
May 1998 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09312933 |
May 1999 |
US |
Child |
09801543 |
Mar 2001 |
US |