Claims
- 1. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:Boric acid17%Monoethanolamine45%Water32%Catechol 6%
- 2. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:Boric acid15%Monoethanolamine43%Water34.8%Lactic acid 6.2%
- 3. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage be weight ranges shown:Boric acid10%Triethanolamine38%Water35%Acetoacetamide17%
- 4. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:Boric acid15%Monoethanolamine35%Water35%Salicylaldehyde15%
- 5. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
- 6. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:Boric acid12%Monoethanolamine45%Triethanolamine10%Water33%
- 7. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:Boric acid17%Monoethanolamine40%Water38%Ethylene glycol 5%
CROSS-REFERENCE TO RELATED APPLICATION
This application claims priority to U.S. provisional application serial No. 60/085,879, filed May 18, 1998 now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (3)
Number |
Date |
Country |
1161026 |
Jan 1984 |
CA |
130420A |
Mar 1978 |
DD |
61-143715 |
Jun 1986 |
JP |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/085879 |
May 1998 |
US |