Claims
- 1. A method for fabricating a semiconductor wafer including the steps comprising:plasma etching a metalized layer from a surface of the wafer; plasma ashing a resist from the surface of the wafer following the metal etching step; cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown: Boric acid 2-17%At least one amine35-70%Water20-45%.
- 2. The method as described in claim 1 further including a glycol solvent having a percentage by weight range of 0-5%.
- 3. The method as described in claim 2 optionally including a chelating agent having a percentage by weight range of 0-17%.
- 4. The method as described in claim 1 optionally including a chelating agent having a percentage by weight range of 0-17%.
- 5. A method for fabricating a semiconductor wafer including the steps comprising:plasma etching a metallized layer from a surface of the wafer; plasma ashing a resist from the surface of the wafer following the metal etching step; cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown: Boric acid 2-17%At least one amine35-70%Water20-45%wherein said at least one amine is selected from the group consisting of:Monoethanolamine (MEA) Triethanolamine (TEA).
- 6. The method as described in claim 5 further including a glycol solvent having a percentage by weight of 0-5%.
- 7. The method as described in claim 6 optionally including a chelating agent having a percentage by weight range of 0-17%.
- 8. The method as described in claim 7 wherein said chelating agent is selected from the group consisting of:Catechol Lactic acid Acetoacetamide Salicylaldehyde.
- 9. The method for fabricating a semiconductor wafer as described in claim 6, including the following components in the percentage by weight ranges shown:Boric acid17%Monoethanolamine40%Water38%Ethylene glycol5%.
- 10. The method as described in claim 5 optionally including a chelating agent having a percentage by weight range of 0-17%.
- 11. The method as described in claim 10 wherein said chelating agent is selected from the group consisting of:Catechol Lactic acid Acetoacetamide Salicylaldehyde.
- 12. The method for fabricating a semiconductor wafer as described in claim 10, including the following components in the percentage by weight ranges shown:Boric acid17%Monoethanolamine45%Water32%Catechol 6%.
- 13. The method for fabricating a semiconductor wafer as described in claim 10, including the following components in the percentage by weight ranges shown:Boric acid15%Monoethanolamine43%Water34.8%Lactic acid 6.2%.
- 14. The method for fabricating a semiconductor wafer as described in claim 10, including the following components in the percentage by weight ranges shown:Boric acid10%Triethanolamine38%Water35%Acetoacetamide17%.
- 15. The method for fabricating a semiconductor wafer as described in claim 10, including the following components in the percentage by weight ranges shown:Boric acid15%Monoethanolamine35%Water35%Salicylaldehyde15%.
- 16. The method as described in claim 5, further including one or more of the compounds selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
- 17. The method for fabricating a semiconductor wafer as described in claim 5, including the following components in the percentage by weight ranges shown:Boric acid15%Monoethanolamine40%Water45%.
- 18. The method for fabricating a semiconductor wafer as described in claim 5, including the following components in the percentage by weight ranges shown:Boric acid12%Monoethanolamine45%Triethanolamine10%Water33%.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of pending U.S. patent application Ser. No. 09/312,933 filed May 17, 1999 which claims priority to U.S. provisional application Ser. No. 60/085,879, filed May 18, 1998.
US Referenced Citations (6)
Foreign Referenced Citations (3)
Number |
Date |
Country |
1161026 |
Jan 1984 |
CA |
130420 |
Mar 1978 |
DE |
61143715 |
Jun 1986 |
JP |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/085879 |
May 1998 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/312933 |
May 1999 |
US |
Child |
09/801543 |
|
US |