Claims
- 1. A method of forming an insulating film upon a select region of a sample comprising the steps of:
- providing a gaseous vapor consists essentially of a compound including principal elements for the desired insulating film, wherein the desired insulating film is a silicon oxide film and said compound consists of a single compound selected from the group consisting of tetrabutoxysilane, Si(OC.sub.4 H.sub.9).sub.4, tetramethoxysilane, Si(OCH.sub.3).sub.4 and tetrapropoxysilane, Si(OC.sub.3 H.sub.7).sub.4 ;
- directing said gaseous vapor over the select region of the sample for depositing said compound thereon; and
- directing a charged particle beam toward the select region of the sample for decomposing said compound to provide an insulating film comprising said elements upon said select region of the sample and wherein said charged particle beam is comprised of a noninsulating compound that has properties of a contaminant in the insulating film.
- 2. The method according to claim 1 wherein said beam is a metal ion beam.
- 3. The method according to claim 2 wherein said metal ion beam is a gallium ion beam.
- 4. The method according to claim 1 wherein said compound consists of tetrabutoxysilane, Si(OC.sub.4 H.sub.9).sub.4.
- 5. The method according to claim 1 wherein said compound consist of tetramethoxysilane, Si(OCH.sub.3).sub.4.
- 6. The method according to claim 1 wherein said compound consist of tetrapropoxysilane, Si(OC.sub.3 H.sub.7).sub.4.
- 7. The method according to claim 1 wherein said step of providing said gaseous vapor includes heating said compound.
- 8. The method according to claim 1 wherein said step of providing said gaseous vapor includes obtaining said gaseous vapor from a liquid form of said compound.
- 9. The method according to claim 1 further comprising the step of establishing said sample at a deposition temperature.
- 10. A method of forming a dielectric film upon a substrate comprising the steps of:
- disposing said substrate within an enclosed chamber;
- supplying a gaseous vapor consisting of a single gaseous compound, the single gaseous compound being an alkoxysilane, selected from the group consisting of tetrabutoxysilane, tetramethoxysilane and tetrapropoxysilane, within said chamber with a flow thereof passing over said substrate;
- generating a focused metal ion beam; and
- directing said metal ion beam upon a select region of said substrate, wherein said metal ion beam causes formation of a dielectric film upon said substrate within said select region, said dielectric film being made up primarily of silicon oxide as provided by the alkoxysilane of the gaseous vapor.
- 11. A method according to claim 10 wherein the substrate comprises a semiconductor device.
- 12. A method according to claim 10 wherein the metal ion beam is obtained from a gallium ion source.
- 13. A method according to claim 10 wherein the step of supplying said gaseous vapor includes obtaining said gaseous vapor from a containment source and directing said gaseous vapor through an orifice of the containment source toward said substrate.
- 14. The method according to claim 10 wherein said gaseous vapor consists of tetrabutoxysilane.
- 15. The method according to claim 10 wherein said gaseous vapor consists of tetramethoxysilane.
- 16. The method according to claim 10 wherein said gaseous vapor consists of tetrapropoxysilane.
- 17. The method according to claim 10 wherein the step of supplying the gaseous vapor includes heating a reservoir containing said alkoxysilane.
- 18. The method according to claim 10 further comprising a step of establishing said substrate at a deposition temperature for desired adherence.
Parent Case Info
This application is a continuation, of application Ser. No. 08/267,189, filed Jun. 28, 1994, now abandoned.
US Referenced Citations (11)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0199585 |
Oct 1986 |
EPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
267189 |
Jun 1994 |
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