The present invention relates to a charged particle gun and a charged particle beam system.
Currently, the wafer observation area is increasing in the semiconductor inspection device market. In particular, in EUV lithography using extreme ultraviolet light, observation of the entire surface of the wafer is essential, and thus it takes several days to several tens of days to inspect defects and dimensions with the current device throughput. Therefore, in semiconductor inspection devices, in addition to the throughput improvement of the inspection device, the ability to operate stably for a long period of time, that is, the ability to perform inspection and measurement with high accuracy continuously for a long period of time is an important index that determines the value of the device.
Here, stable charged particle emission is an element that supports long-term stable operation of the device. When the charged particle emission shows an unstable behavior, the observation results will change and the inspection results will become unstable. Therefore, in order to perform high-accuracy inspection continuously for a long period of time, it is necessary to keep the quality of sample observation results constant. In order to achieve this, a charged particle gun that can stably provide charged particle emission for a long period of time is required.
As an example of such technology for improving the stability of charged particle emission, there is a technology described in JP-A-2002-216686 (PTL 1). In PTL 1, the operation stability of the charged particle gun is improved by making the central axis of the extraction electrode and the suppressor match the central axis of the needle electrode. An electric field is applied to the needle electrodes in a rotationally symmetrical manner about the central axis to achieve stable charged particle emission.
PTL 1: JP-A-2002-216686
However, the conventional technology has a problem that an uneven temperature distribution occurs in the extraction electrode.
In order to improve the throughput of the device, it is effective to increase the amount of charged particles emitted from the charged particle source and observe the sample at high speed. However, when the amount of charged particles emitted from the charged particle source is increased, heat generation and thermal expansion occur in the extraction electrode, which may hinder stable operation of the charged particle gun.
Since 99% or more of the charged particles emitted from the charged particle source collide with the extraction electrode, a current due to the inflow and outflow of electrons is generated in the extraction electrode. Since a voltage of several kV is constantly applied to the extraction voltage to extract the charged particles from the charged particle source, electric power is generated by the applied voltage and the current generated by the charged particles, and heat is generated in the extraction electrode.
Here, electric power W generated by charged particle irradiation can be obtained by
W=V×I Expression (1)
when the applied voltage is V and the current generated by the charged particles is I.
For example, when a current of 500 μA to the extraction electrode to which a voltage of 3 kV is applied is generated, the electric power generated in the extraction electrode is 1.5 W, and the temperature rise due to heat generation exceeds 100° C.
The main shape of the extraction electrode is a cup-like structure as shown in PTL 1, and charged particles collide with a surface disposed perpendicular to the optical axis to generate heat. The thermal conductance of the extraction electrode is small, and the inside of the charged particle gun is in a vacuum state, and thus an adiabatic state is achieved and the heat radiation amount is small. Therefore, the heat generated in the extraction electrode cannot escape, and the heat is accumulated in the part irradiated with charged particles (charged particle irradiation portion), and the temperature of only the charged particle irradiation portion rises. Therefore, under the operating conditions of the charged particle gun in high-throughput observation, a temperature gradient is generated in which the temperature of the charged particle irradiation portion rises and the temperature decreases with increasing distance from the charged particle irradiation portion. This results in an uneven temperature distribution within the extraction electrode.
In PTL 1, the extraction electrode is connected to the extraction electrode base with a screw. In such a structure, heat conduction around the screw is small, and thus a temperature difference occurs between the extraction electrode and the extraction electrode base. Therefore, even in the structure shown in PTL 1, local thermal expansion occurs due to uneven temperature distribution.
PTL 1 describes that the central axis of the extraction electrode and the central axis of the needle electrode continue to match each other, but when trying to achieve high throughput and increasing the amount of charged particles emitted, uneven thermal expansion within the extraction electrode makes it difficult for each central axis to continue to match each other. As a result, it becomes difficult to stably operate the charged particle gun, resulting in loss of machine time and frequent maintenance work to align the central axis of the charged particle source with the central axis of the extraction electrode.
The present disclosure has been made to solve such problems, and an object thereof is to provide a charged particle gun and a charged particle beam system capable of suppressing uneven temperature distribution in the extraction electrode.
An example of a charged particle gun according to the present disclosure includes: a charged particle source; an extraction electrode that extracts charged particles from the charged particle source, allows some of the charged particles to pass therethrough, and blocks some other charged particles; and a heat transfer structure that is in contact with the extraction electrode.
In addition, an example of a charged particle beam system according to the present disclosure includes: the charged particle gun described above; and a computer system that controls the charged particle gun.
A charged particle gun and a charged particle beam system according to the present disclosure equalize the temperature of the extraction electrode by increasing heat conduction in the charged particle irradiation portion of the extraction electrode. As a result, the thermal expansion of the extraction electrode is suppressed or made uniform, and thus the amount of charged particles emitted from the charged particle source is kept constant or fluctuates less. As a result, even when the amount of charged particles is large, the charged particle gun and charged particle beam system operate stably for a long period of time, and thus productivity and maintainability are improved.
In this manner, it becomes possible to increase the amount of charged particles emitted from the charged particle gun, thereby improving the throughput of the charged particle gun and the charged particle beam system while enabling high-accuracy operation (for example, high-accuracy inspection and measurement) over a long period of time.
Examples of the present disclosure will be described below with reference to the drawings. In the attached drawing, there is also a case where elements that are functionally the same are displayed with the same number or corresponding number. In addition, in the drawings used in the following examples, hatching may be added even in plan views to make the drawings easier to see. The attached drawings illustrate examples in accordance with the principles of the present disclosure, but these are for the purpose of understanding the present disclosure and are by no means used in a limited interpretation of the present disclosure. The description in the present specification is merely a typical example and does not in any sense limit the scope of the claims or application examples of the present disclosure.
In the following examples, although the description thereof has been made in sufficient detail for those skilled in the art to implement the present disclosure, it is necessary to understand that other implementations or aspects are possible, and that changes in configuration or structure or substitution of various elements are possible without departing from the scope and spirit of the technical ideas of the present disclosure. Therefore, the following statements should not be interpreted while being limited thereto.
In addition, in the description of the embodiments below, an example is illustrated in which a charged particle gun (electron gun unit) of the present disclosure is applied to a charged particle beam system (pattern measurement system) composed of a scanning electron microscope (SEM) using an electron beam and a computer system. However, this example should not be construed as limiting, and the present disclosure may be applied to, for example, a wafer defect inspection system, a device using a charged particle beam such as an ion beam, a general observation device, and the like.
As an example of the charged particle beam system according to the present disclosure, a length-measuring SEM (also referred to as a critical-dimension scanning electron microscope (CD-SEM)) used for measuring the dimensions of gates or contact holes in semiconductor devices is taken as an example, and the configuration and principle of a length-measuring SEM 900 according to the present disclosure will be described with reference to
Electrons are emitted as charged particles from the electron gun 901 held in a housing 924 maintained in a high vacuum. Emitted electrons are accelerated by a primary electron acceleration electrode 926 to which a high voltage is applied by a high voltage power supply 925. The electron beam 906 (charged particle beam) is converged by an electron lens 927 for convergence. The amount of beam current of the electron beam 906 is then adjusted by an aperture 928. After that, the electron beam 906 is deflected by a scanning coil 929 to two-dimensionally scan a wafer 905 (semiconductor wafer) as a sample.
An electronic objective lens 930 is disposed directly above the wafer 905. The electron beam 906 is narrowed and focused by the electronic objective lens 930 and enters the wafer 905. Secondary electrons 931 generated as a result of incident primary electrons (electron beam 906) are detected by a secondary electron detector 932. Since the amount of detected secondary electrons reflects the shape of the sample surface, the surface shape can be imaged based on the information on the secondary electrons.
The wafer 905 is held on an electrostatic chuck 907 while ensuring a constant degree of flatness, and is fixed onto an X-Y stage 904. Note that
The operation when transferring the wafer 905 to be measured to the electrostatic chuck 907 will be described below. First, the wafer 905 set in a wafer cassette 936 is carried into the load chamber 935 by a transfer robot 938 of a mini-environment 937. The inside of the load chamber 935 can be evacuated and released to the atmosphere by an evacuation system (not shown). The wafer 905 is transferred onto the electrostatic chuck 907 while maintaining the degree of vacuum in the housing 924 at a practically acceptable level by opening and closing a valve (not shown) and operating the transfer robot 934.
A surface potential meter 939 is attached to the housing 924. The surface potential meter 939 is fixed such that the position in the height direction is adjusted such that the distance from the probe tip end to the electrostatic chuck 907 or the wafer 905 is appropriate, and the surface potential of the electrostatic chuck 907 or the wafer 905 can be measured without contact.
The length-measuring SEM 900 may include a computer system 920 that controls the electron gun 901. Each component of the length-measuring SEM 900 described above can be realized using a general-purpose computer. Each component may be realized as a function of a program executed on a computer. In the example of
Furthermore, for example, the computer system 920 may be configured as a multi-processor system. Then, control of each component of the electron optical system in the housing 924 may be realized by the main processor. Also, the control of the X-Y stage 904, the transfer robot 934, the transfer robot 938, and the surface potential meter 939 may be realized by a sub-processor. Further, image processing for generating an SEM image based on the signal detected by the secondary electron detector 932 may be realized by the sub-processor.
The computer system 920 also has an input device for the user to input instructions, and the like, and a display device for displaying GUI screens and SEM images for inputting these instructions. The input device is a device that allows a user to input data or instructions, such as a mouse, a keyboard, a voice input device, and the like. The display device is, for example, a display unit. Such an input/output device (user interface) may be a touch panel capable of inputting and displaying data.
The auxiliary structure 5 comes into contact with the extraction electrode 3. In the example of
Also, in this example, the auxiliary structure 5 is disposed outside the extraction electrode 3. “Outside the extraction electrode 3” means, for example, a region or a position on the opposite side of the charged particle source 1 with respect to the extraction electrode 3 (that is, the charged particle source 1 is disposed inside the extraction electrode 3). In this manner, the charged particles do not collide with the auxiliary structure 5, and thus the factors that make the operation of the charged particle gun unstable can be reduced. Moreover, the heat generation of the auxiliary structure 5 can also be suppressed.
The electron gun 901 includes the charged particle source 1 that emits charged particles (electrons in this example). Although not shown in
The extraction electrode 3 has a passing portion 3c that allows some of the charged particles to pass therethrough. The passing portion 3c is, for example, a circular opening. A part of the charged particle beam 2 emitted from the charged particle source 1 passes through the passing portion 3c, but the rest collides with the extraction electrode 3. That is, the extraction electrode 3 extracts the charged particles from the charged particle source 1, allows some of the charged particles to pass therethrough, and blocks some other charged particles.
Since a high voltage is applied to the extraction electrode 3, the collision of the charged particle beam 2 causes current to generate heat. In the conventional configuration, as the heat transfer path of the generated heat, there is only a heat conduction path 4 that propagates heat inside the extraction electrode 3, but in this example, a heat transfer path 6 that propagates heat inside the auxiliary structure 5 from the auxiliary structure 5 which is in contact with the outer surface of the extraction electrode 3 newly exists. Therefore, the conductance of heat transfer is increased, and the local temperature rise of the extraction electrode 3 is suppressed. Thus, the auxiliary structure 5 functions as a heat transfer structure.
Therefore, the thermal expansion of the extraction electrode 3 is suppressed, and the central axis of the extraction electrode 3 and the central axis of the charged particle source 1 continue to match each other without changing from the initially adjusted state. Accordingly, the charged particle source 1 can stably emit the charged particle beam 2.
The auxiliary structure 5 has an opening portion 5c through which some of the charged particles pass. The opening portion 5c is, for example, a circular opening. The opening portion 5c includes the entire passing portion 3c of the extraction electrode 3 when viewed from the optical axis direction. Such a configuration is realized when, for example, both the passing portion 3c and the opening portion 5c are formed in a circular shape, the diameter of the opening portion 5c is made larger than the diameter of the passing portion 3c, and the passing portion 3c and the opening portion 5c are arranged concentrically. In this manner, the charged particles do not collide with the auxiliary structure 5, and thus the factors that make the operation of the charged particle gun unstable can be reduced. Moreover, the heat generation of the auxiliary structure 5 can also be suppressed.
It can be seen from
In
A solid line represents the amount of current emitted from the electron source, and a dashed line represents the electric power obtained from expression (1). Electrons were emitted by applying a voltage to the electron source, and the change over time in the amount of current emitted from the electron source was measured.
In the case shown in
On the other hand, in the case shown in
Although
Therefore, with the electron gun 901 and the length-measuring SEM 900 of this example, uneven temperature distribution in the extraction electrode is suppressed. In particular, in the example of
In Example 2, the configuration around the extraction electrode 3 in Example 1 is partially changed. Differences from Example 1 will be described below.
However, the contact area between the screw 21 and the conductive member 20 is small and the thermal conductivity is low. Therefore, by bringing the auxiliary structure 5 into contact with the extraction electrode 3 and the conductive member 20 to increase the contact area, the thermal conductivity is greatly improved, and the temperature rise of the extraction electrode 3 can be suppressed more efficiently. By suppressing the temperature rise of the extraction electrode 3, thermal expansion is suppressed, and stable electron emission from the charged particle source 1 can be obtained.
Here, the screw 21 is a fixing member that fixes the extraction electrode 3 and the conductive member 20 to each other, but it can also be configured to function as an adjustment mechanism that adjusts the positional relationship between the extraction electrode 3 and the conductive member 20. For example, as shown in
The auxiliary structure 5 is arranged to cover the extraction electrode 3. Therefore, the relative positions of the charged particle source 1 and the extraction electrode 3 can be adjusted first, and then the auxiliary structure 5 can be attached. Therefore, the attachment of the auxiliary structure 5 does not affect the alignment between the central axis of the charged particle source 1 and the central axis of the extraction electrode 3.
The orientation of the screw 21 can be changed in any manner, and the extraction electrode 3 can be fixed to the conductive member 20 from any direction. In
In Example 3, the configuration of the auxiliary structure 5 in Example 1 is changed such that the auxiliary structure 5 is configured by a plurality of components. Differences from Example 1 will be described below.
In the example of
Here, in the example shown in
In
In the example of
In addition, in
Further, there is no restriction on the number of auxiliary components that configure the auxiliary structure. Moreover, it is not necessary to use the same material for each auxiliary component.
Example 4 limits the material of the auxiliary structure 5 in Example 1. Differences from Example 1 will be described below.
In Example 4, the auxiliary structure 5 contains a material having a thermal conductivity of 10 W/mK or higher as shown in
Example 4 can be similarly applied to the auxiliary structure 5 in Example 2 and the first auxiliary component 33 and the second auxiliary component 34 in Example 3.
In Example 5, the auxiliary structure 5 in Example 1 is provided with fins. Differences from Example 1 will be described below.
It is suitable to set the surface area of the heat radiation fins 41a to 420 mm2 or more. In the example of
In this example, the auxiliary structure 41 has the heat radiation fins 41a, but instead of or in addition to this, the extraction electrode 3 may have heat radiation fins. Moreover, when the electron gun includes a conductive member (for example, the conductive member 20 in
In Example 6, a specific structure is provided on the surface of the auxiliary structure 5 in Example 1. Differences from Example 1 will be described below.
Moreover, as shown in
Thus, by providing the heat transfer layer 51 with particularly high thermal conductivity on the surface of the auxiliary structure 5 and also providing the heat transfer layer 51 on the surface of the screw 21, the efficiency of heat transfer can be further improved, and the heat generation of the extraction electrode can be conducted with higher efficiency.
The heat transfer layer 51 can be made of metal, for example. The heat transfer layer 51 desirably contains a material having a thermal conductivity of 10 W/mK or higher. Examples of such materials include metals with high thermal conductivity such as indium, silver, molybdenum, hafnium, aluminum, nickel, tungsten, gold, copper, and the like. The film forming method and thickness of the heat transfer layer 51 shown in Example 6 are not limited. Examples of film forming methods include sputtering, vacuum deposition, and plating.
In particular, it is suitable that the heat transfer layer 51 is made of a material having a higher thermal conductivity than the other parts (that is, the parts of the auxiliary structure 5 other than the heat transfer layer 51 and the parts of the screw 21 other than the heat transfer layer 51). Copper is suitable as such a material.
The heat transfer layer 51 of the auxiliary structure 5 is suitably formed over the entire surface that comes into contact with the extraction electrode 3 and the conductive member 20, but may be formed over at least part of such a surface. Similarly, the heat transfer layer 51 of the screw 21 is suitably formed over the entire surface that comes into contact with the extraction electrode 3 and the conductive member 20, but may be formed over at least part of such a surface.
As a modification example of Example 6, the heat transfer layer 51 of the auxiliary structure 5 may be formed only on the surface that comes into contact with either the extraction electrode 3 or the conductive member 20. Also, either the heat transfer layer 51 of the auxiliary structure 5 or the heat transfer layer 51 of the screw 21 may be omitted.
The heat transfer layer 51 used in Example 6 can also be used when dividing the auxiliary structure into a plurality of components. In such a case, the heat transfer layer 51 may be provided on the contact surfaces of the auxiliary components. In this manner, the efficiency of heat transfer between the auxiliary components is improved. In such a configuration, the material of the heat transfer layer 51 of each auxiliary component need not be the same.
In Example 7, a specific structure is provided on the surface of the auxiliary structure 5 in Example 1. Differences from Example 1 will be described below.
As a specific example, the metal layer 52 may contain a metal having an emissivity of 0.1 or higher. In this manner, in addition to the heat transfer inside the auxiliary structure 5, the heat of the extraction electrode 3 can be dissipated by heat radiation from the metal layer 52, and the temperature rise of the extraction electrode 3 can be further suppressed. As the material of the metal layer 52, a metal having a high emissivity is suitable, such as nickel, stainless steel, chromium, and brass.
In Example 7, the auxiliary structure 5 may be divided into a plurality of auxiliary components. In that case, the material of the metal layer 52 need not be the same for all auxiliary components.
Example 7 can also be implemented in combination with Example 6. In that case, the material of the heat transfer layer 51 and the metal layer 52 need not be the same.
By combining Example 7 and Example 5, the efficiency of heat radiation can be further improved.
The metal layer 52 is suitably formed over the entire outer surface of the auxiliary structure 5 (particularly, the entire surface not in contact with the extraction electrode 3), but may be formed over at least a part of the outer surface.
In Example 8, the material of the main body of the auxiliary structure in Example 6 or 7 is limited. Differences from Examples 6 and 7 will be described below.
As shown in
A representative material is titanium. Since titanium has a small heat capacity, the temperature rises quickly, but because of its low thermal conductivity, it is difficult to heat a place far from the heat source. Therefore, by forming the heat transfer layer 51 or the metal layer 52 that conducts heat on the surface of a material having a small heat capacity, such as titanium, heat can be uniformly transferred to the entire auxiliary structure. As a result, the temperature of the entire auxiliary structure rises in a short period of time, and thus the heat transfer performance of the heat transfer structure is improved.
In Example 9, the auxiliary structure 5 in Example 1 is subjected to surface treatment. Differences from Example 1 will be described below.
As shown in
In Example 10, a charged particle amount adjustment electrode is additionally provided to the configuration of Example 1. Differences from Example 1 will be described below.
Although not particularly shown in
According to Example 10, the intensity of the charged particle beam can be adjusted more appropriately.
In the above description of Examples 1 to 10, specific combinations of Examples have been described, but each Example can be implemented in any combination.
1: charged particle source
2: charged particle beam
3: extraction electrode
3
a: first part
3
b: second part
3
c: passing portion
4: heat conduction path
5: auxiliary structure (heat transfer structure)
5
c: opening portion
6: heat transfer path
8: temperature measurement portion
9: charged particle irradiation portion
20: conductive member
21: screw (heat transfer structure)
22: heat transfer path
31: plate-like extraction electrode (extraction electrode)
32: conductive member
33: first auxiliary component (heat transfer structure)
34: second auxiliary component (heat transfer structure)
35: heat conducting terminal (heat transfer structure)
51: heat transfer layer
52: metal layer
41: auxiliary structure (heat transfer structure)
41
a: heat radiation fin
61: charged particle amount adjustment electrode (adjustment electrode)
900: length-measuring SEM (charged particle beam system)
901: electron gun (charged particle gun)
920: computer system
A, A1, A3, A20: central axis
Filing Document | Filing Date | Country | Kind |
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PCT/JP2020/017560 | 4/23/2020 | WO |