Claims
- 1. A method of chemical-mechanical polishing for forming a shallow trench isolation, wherein a substrate having a plurality of active regions, including a plurality of relatively large active regions and a plurality of relatively small active regions, is provided, the method comprising the steps of:forming a plurality of shallow trenches between the active regions; forming an oxide layer over the substrate, so that the shallow trenches are filled therewith; forming a partial reverse active mask on the oxide layer, wherein the partial reverse active mask has an opening at a central part of each relatively large active region when the reverse active mask completely covers each relatively small active region and trenches, wherein the opening exposes a portion of the oxide layer, and wherein the opening has at least a dummy pattern and wherein the dummy pattern comprises at least one protrusion portion in the opening; removing the oxide layer on the central part of each large active region; removing the partial reverse active mask; and planarizing the oxide layer.
- 2. A method as claimed in claim 1, wherein the shallow trenches are formed by photolithography and etching.
- 3. A method as claimed in claim 1, wherein the oxide layer is formed by high density plasma chemical vapor deposition.
- 4. A method as claimed in claim 1, wherein the exposed portion of the oxide layer is removed by anisotropic etching.
- 5. A method as claimed in claim 1, comprising the step of:forming a silicon nitride layer on the substrate before said planarizing of the oxide layer.
- 6. A method as claimed in claim 5, wherein the exposed portion of the oxide layer is removed, using the silicon nitride layer as an etching stop layer.
- 7. A method as claimed in claim 1, wherein the oxide layer is planarized by chemical mechanical polishing.
Priority Claims (1)
Number |
Date |
Country |
Kind |
87108699 A |
Jun 1998 |
TW |
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CROSS-REFERENCE TO RELATED APPLICATION
The present application is a continuation of U.S. patent application Ser. No. 09/692,251, filed Oct. 19, 2000 which is a divisional of U.S. patent application Ser. No. 09/111,007, filed Jul. 7, 1998, now U.S. Pat. No. 6,169,012 B1, which claims priority from Taiwan Application No. 87108699, filed Jun. 3, 1998, all the disclosures of which are herein specifically incorporated by this reference.
US Referenced Citations (13)
Continuations (1)
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Number |
Date |
Country |
Parent |
09/692251 |
Oct 2000 |
US |
Child |
09/991395 |
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US |