Claims
- 1. A method of chemical vapor deposition in a chemical vapor deposition apparatus having a reaction chamber and a substrate holder having an outer diameter, comprising the steps of:
- introducing a reaction gas into the reaction chamber;
- introducing a purge gas into the reaction chamber through holes arranged at locations adjacent a wall of the reaction chamber and which locations have an inside dimension that is greater than the outer diameter of the substrate holder;
- performing chemical vapor deposition in the reaction chamber; and
- exhausting the purge gas and the reaction gas from the reaction chamber.
- 2. The method of claim 1, wherein the purge gas introducing step includes introducing the purge gas through said holes further located symmetrically about a center axis of the reaction chamber in a top wall of the reaction chamber.
- 3. The method of claim 1, wherein the purge gas and the reaction gas exhausting step includes exhausting the purge gas and the reaction gas through exhaust ports at locations across from the purge gas holes.
- 4. The method of claim 3, wherein the locations of the exhaust ports of the purge gas and the reaction gas exhausting step have an inside dimension that is greater than the outer diameter of the substrate holder.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-321144 |
Nov 1996 |
JPX |
|
Parent Case Info
This application is a divisional of Application Ser. No. 08/932,424, filed Sep. 17, 1997.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4981722 |
Moller et al. |
Jan 1991 |
|
4989541 |
Mikoshiba et al. |
Feb 1991 |
|
5000113 |
Wang et al. |
Mar 1991 |
|
Foreign Referenced Citations (2)
Number |
Date |
Country |
1-29974 |
May 1989 |
JPX |
3-268320 |
Nov 1991 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
932424 |
Sep 1997 |
|