Claims
- 1. A method of in situ plasma cleaning of a physical vapor deposition chamber comprising a target, a substrate support mounted opposite said target, a power supply that couples energy to the region between the target and the substrate support so as to form a plasma in said region, and a collimator mounted between said target and said support, comprising
- replacing said target with a cover plate,
- connecting said cover plate to said power supply,
- supplying a plasma precursor gas to said chamber and applying a voltage to create a first plasma to clean the upper portion of the chamber between the target and the collimator, and
- applying a positive bias to the substrate support,
- to create a second plasma to clean the lower portion of the chamber between the collimator and the substrate support.
- 2. A method according to claim 1 wherein a magnet assembly is connected to said cover plate.
- 3. A method according to claim 1 wherein, after the second plasma clean step, the cover plate is replaced with the target.
- 4. A method of in situ plasma cleaning of a physical vapor deposition chamber comprising a target, a substrate support mounted opposite said target, a power supply that generates a plasma between said target and said substrate support, and a collimator between said target and said substrate support comprising
- applying a positive bias to the substrate support,
- supplying a plasma precursor gas to said chamber and
- applying a voltage to create a plasma to clean the portion of said chamber between the collimator and said substrate support.
- 5. A method according to claim 4 wherein said precursor gas is argon.
Parent Case Info
This is a continuation of application Ser. No. 08/063,478 filed May 17, 1993, now U.S. Pat. No. 5,403,459.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0440377A2 |
Aug 1991 |
EPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
63478 |
May 1993 |
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