Patent Application
20240036474
Embodiments herein relate to the field of semiconductor processing. In particular, various embodiments relate to patterning a semiconductor substrate using photolithography and related processes. Various techniques for controlling metallic contamination are discussed.
The fabrication of semiconductor devices, such as integrated circuits, is a multi-step process involving photolithography. In general, the process includes the deposition of material on a wafer, and patterning the material through lithographic techniques to form structural features (e.g., transistors and circuitry) of the semiconductor device. The steps of a typical photolithography process known in the art include: preparing the substrate; applying a photoresist, such as by spin coating; exposing the photoresist to light in a desired pattern, causing the exposed areas of the photoresist to become more or less soluble in a developer solution; developing the photoresist pattern by applying a developer solution to remove either the exposed or the unexposed areas of the photoresist; and subsequent processing to create features on the areas of the substrate from which the photoresist has been removed, such as by etching or material deposition.
The evolution of semiconductor design has created the need, and has been driven by the ability, to create ever smaller features on semiconductor substrate materials. This progression of technology has been characterized in “Moore's Law” as a doubling of the density of transistors in dense integrated circuits every two years. Indeed, chip design and manufacturing has progressed such that modern microprocessors may contain billions of transistors and other circuit features on a single chip. Individual features on such chips may be on the order of 22 nanometers (nm) or smaller, in some cases less than 10 nm.
One challenge in manufacturing devices having such small features is the ability to reliably and reproducibly create photolithographic masks having sufficient resolution. Current photolithography processes typically use 193 nm ultraviolet (UV) light to expose a photoresist. The fact that the light has a wavelength significantly greater than the desired size of the features to be produced on the semiconductor substrate creates inherent issues. Achieving feature sizes smaller than the wavelength of the light requires use of complex resolution enhancement techniques, such as multipatterning. Thus, there is significant interest and research effort in developing photolithographic techniques using shorter wavelength light, such as extreme ultraviolet radiation (EUV), having a wavelength of from 10 nm to 15 nm, e.g., 13.5 nm.
EUV photolithographic processes can present challenges, however, including low power output and loss of light during patterning. Traditional organic chemically amplified resists (CAR) similar to those used in 193 nm UV lithography have potential drawbacks when used in EUV lithography, particularly as they have low absorption coefficients in the EUV region and the diffusion of photo-activated chemical species can result in blur or line edge roughness. Furthermore, in order to provide the etch resistance required to pattern underlying device layers, small features patterned in conventional CAR materials can result in high aspect ratios at risk of pattern collapse. Accordingly, there remains a need for improved EUV photoresist materials, having such properties as decreased thickness, greater absorbance, and greater etch resistance.
The background description provided herein is for the purpose of generally presenting the context of the present technology. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present technology.
Various embodiments herein relate to methods, apparatus, and systems for controlling contamination on a substrate. The substrate is typically a semiconductor substrate. In one aspect of the disclosed embodiments, a method of controlling contamination on a substrate is provided, the method including: (a) either (i) processing a frontside of the substrate, thereby causing formation of contamination on a backside of the substrate, or (ii) receiving the substrate with contamination on the backside of the substrate, the contamination including a metal; and (b) after (a), heating the substrate in a post-processing bake process, where heating the substrate reduces a concentration of the metal on the backside of the substrate.
In some embodiments, processing the frontside of the substrate may include at least one process selected from the group consisting of: developing a layer of photoresist; in-situ cleaning the substrate; pulling a mandrel in a patterning application; smoothing a feature on the substrate; and descumming a layer of photoresist. In these or other embodiments, (a) may include either (i) developing the layer of photoresist on the substrate, or (ii) receiving the substrate with a layer of photoresist developed on the frontside of the substrate and contamination on the backside of the substrate, where the metal in the contamination originates from the layer of photoresist on the frontside of the substrate, and where the post-processing bake process of (b) is a post-development bake process that occurs when the layer of photoresist is at least partially developed. In these or other embodiments, during the post-development bake process of (b), the substrate may be baked at a temperature between about 160-300° C. for a duration between about 1-10 minutes.
In these or other embodiments, the method may further include exposing the substrate to a processing gas, the processing gas including at least one gas selected from the group consisting of N2, H2, Ar, He, Xe, and combinations thereof. In these or other embodiments, the method may further include exposing the substrate to a reactive processing gas to increase a volatility of a metal-containing material on the substrate, the metal containing material including the metal. In some embodiments, the method may further include exposing the substrate to a reactive processing gas to increase a stability of a metal-containing material on the substrate, the metal containing material including the metal. In these or other embodiments, the method may further include exposing the substrate to a reactive processing gas selected from the group consisting of a chlorine-containing gas, an oxygen-containing gas, a fluorine-containing gas, ammonia (NH3), hydrogen iodide (HI), diatomic iodine (I2), and combinations thereof. In some cases, the substrate may be exposed to the chlorine-containing gas and the chlorine-containing gas may include at least one gas selected from the group consisting of BCl3, Cl2, HCl, SiCl4, SOCl2, PCl3, and combinations thereof. In some cases, the substrate may be exposed to the oxygen-containing gas and the oxygen-containing gas may include at least one gas selected from the group consisting of O2, O3, H2O, SO2, CO2, CO, COS, H2O2, NOx, and combinations thereof. In some cases, the substrate may be exposed to the fluorine-containing gas, and the fluorine-containing gas may include at least one gas selected from the group consisting of HF, CxFyHz, NF3, SF6, F2, and combinations thereof.
In these or other embodiments, the method may further include exposing the substrate to plasma to increase a volatility of a metal-containing material on the substrate, the metal containing material including the metal. In some embodiments, the method may further include exposing the substrate to plasma to increase a stability of a metal-containing material on the substrate, the metal containing material including the metal. In these or other embodiments, the method may further include exposing the substrate to plasma generated from a plasma generation gas including at least one gas selected from the group consisting of diatomic hydrogen (H2), diatomic nitrogen (N2), argon, helium, krypton, methane (CH4), an oxygen-containing gas, a fluorine-containing gas, a chlorine-containing gas, a hydrogen halide, and combinations thereof. In some embodiments, the plasma generation gas may include the oxygen-containing gas, and the oxygen-containing gas may include at least one gas selected from the group consisting of O2, O3, CO, CO2, COS, SO2, NOx, H2O, and combinations thereof. In some embodiments, the plasma generation gas may include the fluorine-containing gas, and the fluorine-containing gas may include at least one gas selected from the group consisting of NF3, CF4, CH3F3, CH2F2, CHF3, F2, SF6, and combinations thereof. In some embodiments, the plasma generation gas may include the chlorine-containing gas, and the chlorine-containing gas may include at least one gas selected from the group consisting of BCl3, Cl2, HCl, SiCl4, SOCl2, PCl3, and combinations thereof. In some embodiments, the plasma generation gas may include (i) the diatomic hydrogen (H2), and (ii) at least one of diatomic nitrogen (N2) or a noble gas.
In these or other embodiments, heating the substrate in the post-development bake process may reduce the concentration of the metal on the backside of the substrate by at least an order of magnitude. In these or other embodiments, the method may further include exposing the substrate to plasma, where heating the substrate in the post-development bake process and exposing the substrate to plasma reduces the concentration of the metal on the backside of the substrate by at least two orders of magnitude.
In these or other embodiments, the method may further include exposing the substrate to light to reduce a concentration of the metal on the backside of the substrate. In some embodiments, the light may include at least one of UV wavelengths, visible wavelengths, or IR wavelengths. In some embodiments, the light may be provided via an IR lamp or a plurality of LEDs, and the substrate may be heated to a temperature between about 250-400° C. for a duration of about 60 seconds or less while the substrate is exposed to the light.
In these or other embodiments, heating the substrate in the post-development bake process may begin while the layer of photoresist is still being developed on the substrate.
In these or other embodiments, the method may further include transferring the substrate from a first processing chamber to a second processing chamber after (a), such that (a) occurs in the first processing chamber and (b) occurs in the second processing chamber. In these or other embodiments, (a) may occur in a processing chamber, and the method may further include heating the processing chamber to a temperature of about 40° C. or greater while the layer of photoresist is developed in (a). In these or other embodiments, (a) may occur in a processing chamber, and the method may further include purging the processing chamber while maintaining the processing chamber at a temperature of about 100° C. or greater, the purge occurring after (a). In some embodiments, the method may further include sweeping the processing chamber with inert gas, where the purge and the sweeping are part of a pump purge sequence.
In these or other embodiments, the method may further include performing a wet clean on the backside of the substrate after (a) and (b). In these or other embodiments, performing the wet clean on the backside of the substrate may further reduce the concentration of the metal on the backside of the substrate by at least an order of magnitude. In these or other embodiments, the wet clean may also clean a bevel edge region on the frontside of the substrate. In these or other embodiments, performing the wet clean on the backside of the substrate may include exposing the backside of the substrate to dilute HF. In these or other embodiments, performing the wet clean on the backside of the substrate may further include exposing the backside of the substrate to dilute HCl or to a standard clean 1 solution including NH4OH, H2O2, and H2O.
In various, the layer of photoresist may be formed using dry deposition. In other embodiments, the layer of photoresist may be formed using wet deposition. In various embodiments, the layer of photoresist may be developed using dry processing. In some embodiments, the layer of photoresist may be developed using halogen-containing chemistry. In some embodiments, the layer of photoresist may be developed using wet processing.
In various embodiments, the post-development bake process of (b) may occur in a processing chamber, and the following conditions may be used during the post-development bake process of (b): (i) a pressure in the processing chamber may be maintained between about 0.01-1 Torr, (ii) a chlorine-containing gas may be provided to the processing chamber at a rate of about 200-10,000 sccm for a duration between about 1-10 minutes, (iii) a temperature of one or more components of the processing chamber may be maintained between about 20-150° C., and (iv) the substrate may not be exposed to plasma during (b).
In various embodiments, the layer of photoresist may be developed in (a) in a processing chamber, (b) may occur in the same processing chamber as (a), and the method may further include purging the processing chamber using the following conditions: (i) a pressure in the processing chamber may be between about 0.01-1 Torr, (ii) a flow of purge gas may be provided to the processing chamber at a rate between about 200-10,000 sccm, the purge gas including at least one gas selected from the group consisting of diatomic nitrogen (N2), a noble gas, and combinations thereof, the purge gas being provided to the processing chamber for a duration between about 1-minutes, and (iii) one or more components of the processing chamber may be maintained between about 100-300° C., and a substrate support within the processing chamber may be maintained between about 120-300° C.
In various embodiments, (a) may occur in a first processing chamber and (b) may occur in a second processing chamber, and the following conditions may be used during the post-development bake process of (b): (i) a pressure in the second processing chamber may be between about 0.1-760 Torr, (ii) a flow of gas may be provided to the second processing chamber at a rate of about 200-10,000 sccm for a duration between about 1-10 minutes, the substrate may be exposed to the flow of gas, the flow of gas including at least one of air, diatomic nitrogen (N2), diatomic oxygen (O2), water (H2O), a noble gas, or a combination thereof, and (iii) the substrate may be baked at a temperature between about 140-300° C.
In these or other embodiments, the method may further include exposing the substrate to plasma in a processing chamber under the following conditions: (i) a pressure in the processing chamber may be between about 0.1-1 Torr, (ii) a plasma generation gas may be provided at a rate between about 50-5,000 sccm for a duration between about 3-30 seconds, the plasma generation gas may include at least one gas or gas mixture selected from the group consisting of (a) H2, (b) H2 and N2, (c) H2 and a noble gas, (d) N2, without H2, (e) a noble gas, without H2, (f) an oxygen-containing gas, (g) a fluorine-containing gas, and (h) combinations thereof, and (iii) plasma is generated from the plasma generation gas and the substrate is exposed to the plasma.
In these or other embodiments, at least one of (a) and (b) may occur in a processing chamber, and the method may further include cleaning the processing chamber to remove the metal from interior surfaces of the processing chamber. In some embodiments, the processing chamber may be cleaned using the following conditions: (i) a pressure in the processing chamber may be between about 0.1-10 Torr, (ii) a plasma including H radicals may be exposed to the processing chamber, where the H radicals react with the metal on the interior surfaces of the processing chamber to form a metal hydride, (iii) the plasma may be generated using an RF power between about 300-4,000 Watts, and (iv) the processing chamber may be maintained between about 25-250° C. In these or other embodiments, the processing chamber may be cleaned using the following conditions: (i) a pressure in the processing chamber may be between about 0.1-10 Torr, and may be cycled between a lower pressure and a higher pressure as part of a pumping and purging process, (ii) the processing chamber is not exposed to plasma during cleaning, (iii) a gas flow may be provided to the processing chamber during cleaning, the gas flow including at least one gas selected from the group consisting of diatomic nitrogen (N2), diatomic oxygen (O2), a noble gas, and combinations thereof, and (iv) the processing chamber may be maintained between about 25-250° C.
In these or other embodiments, the method may further include performing a wet clean on the backside of the substrate using the following conditions: (i) in a first step, the substrate may be exposed to a first cleaning solution provided at a rate of about 1-3 L/min, the first cleaning solution including dilute HF, (ii) in a second step, the substrate may be exposed to a second cleaning solution provided at a rate of about 1-3 L/min, where the second cleaning solution includes a solution selected from the group consisting of dilute HCl, standard clean 1, and combinations thereof, (iii) the first step and second step may together have a duration between about 20-300 seconds, and (iv) the substrate may be maintained between about 15-60° C.
In these or other embodiments, the concentration of the metal on at least one of the backside or bevel edge region of the substrate may be reduced by at least an order of magnitude to about 1E11 atoms/cm2 or less. In these or other embodiments, the concentration of the metal on at least one of the backside or bevel edge region of the substrate may be reduced by at least an order of magnitude to about 1E10 atoms/cm2 or less.
In these or other embodiments, the metal may be tin.
In another aspect of the disclosed embodiments, a system for processing a substrate is provided, the system including: a processing chamber; an inlet to the processing chamber for introducing gas and/or plasma to the processing chamber; an outlet to the processing chamber for removing materials from the processing chamber; a heater; a substrate support; and a controller configured to cause any one or more of the methods claimed or otherwise described herein.
In another aspect of the disclosed embodiments, a system for processing a substrate is provided, the system including: a processing chamber; an inlet to the processing chamber for introducing gas and/or plasma to the processing chamber; an outlet to the processing chamber for removing materials from the processing chamber; a heater; a substrate support; and a controller configured to cause: (a) either (i) processing a frontside of the substrate, thereby causing formation of contamination on a backside of the substrate, or (ii) receiving the substrate with contamination on the backside of the substrate, the contamination including a metal; and (b) after (a), heating the substrate in a post-processing bake process, where heating the substrate reduces a concentration of the metal on the backside of the substrate.
In some embodiments, processing the frontside of the substrate may include at least one process selected from the group consisting of: developing a layer of photoresist; in-situ cleaning the substrate; pulling a mandrel in a patterning application; smoothing a feature on the substrate; and descumming a layer of photoresist.
In these or other embodiments, the controller may be configured to cause (a) by causing either (i) developing the layer of photoresist on the substrate, or (ii) receiving the substrate with a layer of photoresist developed on the frontside of the substrate and contamination on the backside of the substrate, where the metal in the contamination originates from the layer of photoresist on the frontside of the substrate, and where the post-processing bake process of (b) is a post-development bake process that occurs when the layer of photoresist is at least partially developed.
In various embodiments, (a) and (b) may both occur in the same processing chamber. In other embodiments, (a) may occur in the processing chamber, and (b) may occur in a second processing chamber, the second processing chamber being a different processing chamber than the processing chamber.
In these or other embodiments, the system may further include a plasma generator configured to provide plasma in the processing chamber. In some cases, the plasma generator may be a remote plasma generator such that the plasma is generated at a first location outside of the processing chamber and delivered to a second location inside the processing chamber. These and other aspects are described further below with reference to the drawings.
This disclosure relates generally to the field of semiconductor processing. In particular aspects, the disclosure is directed to process and apparatus for treating and cleaning of photoresists (e.g., EUV-sensitive metal and/or metal oxide-containing photoresists), for example to remove unwanted photoresist and related materials such as metals and metal bromides deposited on a backside and bevel edge of a substrate in the context of photoresist patterning.
Reference is made herein in detail to specific embodiments of the disclosure. Examples of the specific embodiments are illustrated in the accompanying drawings. While the disclosure will be described in conjunction with these specific embodiments, it will be understood that it is not intended to limit the disclosure to such specific embodiments. On the contrary, it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the disclosure. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. The present disclosure may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail so as to not unnecessarily obscure the present disclosure.
For example, while the present disclosure is primarily provided in the context of photoresist deposition, development, and treatment, the embodiments are not so limited. Various techniques described herein may also be applied in other contexts, particularly in cases where it is desired to limit outgassing of a metal-containing species such as a metal halide from a substrate and/or to remove metal-containing species from a substrate (particularly but not limited to the backside and bevel edge region of the substrate). Such techniques may be particularly useful in cases where the metal is tin and/or the unwanted material is tin bromide, though other metals and halogens may be used as well. Examples of other processes that may benefit from implementation of one or more of the disclosed techniques include, but are not limited to, in-situ cleaning, mandrel pull, smoothing operations, and photoresist descum operations. It is understood that processes described herein as occurring “post development” may occur after other types of operations (e.g., deposition, etching, treatment, etc.) in the contexts listed above. For instance, the post development bake (PDB) operation may instead be performed as a post deposition bake, a post etching bake, a post treatment bake, etc. In some such cases, the photoresist layer described herein may be substituted with another metal-containing or metal halide-containing layer. For purposes of clarity and brevity, the present disclosure focuses on embodiments in the context of photoresist deposition, development, and treatment.
Patterning of thin films in semiconductor processing is often an important step in the fabrication of semiconductors. Patterning involves lithography. In conventional photolithography, such as 193 nm photolithography, patterns are printed by emitting photons from a photon source onto a mask and printing the pattern onto a photosensitive photoresist, thereby causing a chemical reaction in the photoresist that, after development, removes certain portions of the photoresist to form the pattern.
Advanced technology nodes (as defined by the International Technology Roadmap for Semiconductors) include nodes 22 nm, 16 nm, and beyond. In the 16 nm node, for example, the width of a typical via or line in a Damascene structure is typically no greater than about 30 nm. Scaling of features on advanced semiconductor integrated circuits (ICs) and other devices is driving lithography to improve resolution.
Extreme ultraviolet (EUV) lithography can extend lithography technology by moving to smaller imaging source wavelengths than would be achievable with conventional photolithography methods. EUV light sources at approximately 10-20 nm, or 11-14 nm wavelength, for example 13.5 nm wavelength, can be used for leading-edge lithography tools, also referred to as scanners. The EUV radiation is strongly absorbed in a wide range of solid and fluid materials including quartz and water vapor, and so operates in a vacuum.
EUV lithography makes use of EUV resists that are patterned to form masks for use in etching underlying layers. EUV resists may be polymer-based chemically amplified resists (CARs) produced by liquid-based spin-on techniques. An alternative to CARs are directly photopatternable metal oxide-containing films, such as those available from Inpria, Corvallis, OR, and described, for example, in US Patent Publications US 2017/0102612 and US 2016/0116839, incorporated by reference herein at least for their disclosure of photopatternable metal oxide-containing films. Such films may be produced by spin-on techniques or dry vapor-deposited. The metal oxide-containing film can be patterned directly (i.e., without the use of a separate photoresist) by EUV exposure in a vacuum ambient providing sub-30 nm patterning resolution, for example as described in U.S. Pat. No. 9,996,004, issued Jun. 12, 2018 and titled EUV PHOTOPATTERNING OF VAPOR-DEPOSITED METAL OXIDE-CONTAINING HARDMASKS, and/or in Application PCT/US19/31618, filed May 9, 2019, and titled METHODS FOR MAKING EUV PATTERNABLE HARD MASKS, the disclosures of which at least relating to the composition, deposition, and patterning of directly photopatternable metal oxide films to form EUV resist masks is incorporated by reference herein. Generally, the patterning involves exposure of the EUV resist with EUV radiation to form a photo pattern in the resist, followed by development to remove a portion of the resist according to the photo pattern to form the mask.
It should also be understood that the while present disclosure relates to lithographic patterning techniques and materials exemplified by EUV lithography, it is also applicable to other next generation lithographic techniques. In addition to EUV, which includes the standard 13.5 nm EUV wavelength currently in use and development, the radiation sources most relevant to such lithography are DUV (deep-UV), which generally refers to use of 248 nm or 193 nm excimer laser sources, X-ray, which formally includes EUV at the lower energy range of the X-ray range, as well as e-beam, which can cover a wide energy range. The specific methods may depend on the particular materials and applications used in the semiconductor substrate and ultimate semiconducting device. Thus, the methods described in this application are merely exemplary of the methods and materials that may be used in present technology.
Directly photopatternable EUV resists may be composed of or contain metals and/or metal oxides mixed within organic components. The metals/metal oxides are highly promising in that they can enhance the EUV photon adsorption and generate secondary electrons and/or show increased etch selectivity to an underlying film stack and device layers.
During application of a photoresist film (e.g., EUV photoresist film) to a substrate, either by conventional wet, e.g., spin-on, processing or dry deposition, there may be some unintended deposition of resist material on the wafer backside and/or bevel edge. Likewise, development of a photoresist film on a substrate can cause contamination (e.g., including metals and metal halides) in these same regions. This backside and bevel edge contamination can cause downstream processing problems, including contamination of the patterning (scanner), development tools, and downstream processing tools and metrology tools. Such contamination can be detrimental to the performance of the tools as well as to film deposited on the frontside of the wafer. In many cases, removal of this backside and bevel edge deposition is done by wet cleaning techniques, though dry cleaning techniques may be used as well.
The present disclosure provides for various techniques to minimize outgassing of metal and/or metal halide species from a metal-containing film on a substrate. In some cases, the methods involve treating the substrate to make the potentially contaminating species more volatile, such that they can be removed from the substrate and processing chamber. In some cases, the methods involve treating the substrate to make the potentially contaminating species more stable, such that they are less likely to outgas from the substrate during downstream processing. In various cases, the methods involve cleaning the backside and bevel edge area of the substrate after photoresist development to address contamination that is generated during development. These techniques may be combined as desired for a particular application. In various embodiments, the techniques may also act to prevent or reduce unwanted surface migration and/or unwanted reactions on the substrate. Advantageously, the techniques herein have shown a small to negligible effect on the pattern defined in the photoresist. Further, such techniques can provide in improvements in line width roughness (LWR).
Certain operations described herein may be limited to specific regions to ensure removal of the material from backside and bevel edge regions without film degradation on the frontside of the substrate. These operations may include, e.g., the backside and bevel edge cleaning operations. Other operations described herein may act on the frontside of the substrate, or the entire substrate, for example to purposely alter the metal-containing species on one or more substrate surface.
In some embodiments, the unwanted material on the substrate includes EUV resist material. In some embodiments, the unwanted material includes metal, metal halides, and/or organometal halides originating from a reaction between a metal in the EUV resist material and a halogen in the development chemistry. These may be referred to as etch byproducts or development byproducts. Such byproducts are especially likely to remain in the metal-containing photoresist material, which can retain metal bromides and metal chlorides at concentrations up to about 1E16 atoms/cm2, which is about 2-3 orders of magnitude higher than typically acceptable for device manufacturing. In some cases, the metal is tin, the metal halide is SnBrx, and/or the organometal halide is RSnBrx. In these or other cases, the metal is tin, the metal halide is SnClx, and/or the organometal halide is RSnClx. Other metals and halides may be used, as well. In many cases, the unwanted material is deposited on the backside and bevel edge regions of the substrate.
At block 102 of the process 100, a layer of photoresist is deposited. This may be either a dry deposition process such as a vapor deposition process or a wet process such as a spin-on deposition process.
The photoresist may be a metal-containing EUV resist. Generally speaking, conventional chemically amplified photoresist materials do not include a significant amount of metal, and do not suffer the related metallic contamination problems to the same degree. As such, while the methods herein can be practiced on any type of photoresist or other film, they may have greatest value when combating contamination from a metal-containing EUV resist. An EUV-sensitive metal or metal oxide-containing film may be deposited on a semiconductor substrate by any suitable technique, including wet (e.g., spin-on) or dry (e.g., CVD) deposition techniques. For example, described processes have been demonstrated for EUV photoresist compositions based on organotin oxides, being applicable to both commercially spin-coatable formulations (e.g., such as are available from Inpria Corp, Corvallis, OR) and formulations applied using dry vacuum deposition techniques, further described below. Though the photoresist described in the present disclosure is often described as a metal-containing EUV resist material, it will be understood that the process operations of the present disclosure may apply to any other films such as silicon-based films or carbon-based films.
Semiconductor substrates may include any material construct suitable for photolithographic processing, particularly for the production of integrated circuits and other semiconducting devices. In some embodiments, semiconductor substrates are silicon wafers. Semiconductor substrates may be silicon wafers upon which features have been created (“underlying features”), having an irregular surface topography. As referred to herein, the frontside of the substrate is a surface onto which films are intentionally deposited or that is to be exposed to EUV during processing. The backside of the substrate is opposite the frontside. Underlying features may include regions in which material has been removed (e.g., by etching) or regions in which materials have been added (e.g., by deposition) during processing prior to conducting a method of this disclosure. Such prior processing may include methods of this disclosure or other processing methods in an iterative process by which two or more layers of features are formed on the substrate.
EUV-sensitive thin films may be deposited on the semiconductor substrate, such films being operable as resists for subsequent EUV lithography and processing. Such EUV-sensitive thin films comprise materials which, upon exposure to EUV, undergo changes, such as the loss of bulky pendant substituents bonded to metal atoms in low density M-OH rich materials, allowing their crosslinking to denser M-O-M bonded metal oxide materials. Through EUV patterning, areas of the film are created that have altered physical or chemical properties relative to unexposed areas. These properties may be exploited in subsequent processing, such as to dissolve either unexposed or exposed areas, or to selectively deposit materials on either the exposed or unexposed areas. In some embodiments, the unexposed film has a more hydrophobic surface than the exposed film under the conditions at which such subsequent processing is performed. For example, the removal of material may be performed by leveraging differences in chemical composition, density and cross-linking of the film. Removal may be by wet processing or dry processing, as further described below.
The thin films are, in various embodiments, organometallic materials, for example organotin materials comprising tin oxide, or other metal oxide materials/moieties. The organometallic compounds may be made in a vapor phase reaction of an organometallic precursor with a counter reactant. In various embodiments, the organometallic compounds are formed through mixing specific combinations of organometallic precursors having bulky alkyl groups or fluoroalkyl with counter-reactants and polymerizing the mixture in the vapor phase to produce a low-density, EUV-sensitive material that deposits onto the semiconductor substrate.
In various embodiments, organometallic precursors comprise at least one alkyl group on each metal atom that can survive the vapor-phase reaction, while other ligands or ions coordinated to the metal atom can be replaced by the counter-reactants. Organometallic precursors include those of the formula:
MaRbLc (Formula 1)
wherein: M is an element with a high patterning radiation-absorption cross-section; R is alkyl, such as CnH2n+1, preferably wherein n≥3; L is a ligand, ion or other moiety which is reactive with the counter-reactant; a≥1; b≥1; and c≥1.
In various embodiments, M has an atomic absorption cross section equal to or greater than 1×107 cm2/mol. M may be, for example, selected from the group consisting of tin, hafnium, tellurium, bismuth, indium, iodine, antimony, germanium, and combinations thereof. In some embodiments, M is tin. R may be fluorinated, e.g., having the formula CnFxH(2n+1). In various embodiments, R has at least one beta-hydrogen or beta-fluorine. For example, R may be selected from the group consisting of i-propyl, n-propyl, t-butyl, i-butyl, n-butyl, sec-butyl, n-pentyl, i-pentyl, t-pentyl, sec-pentyl, and mixtures thereof. L may be any moiety readily displaced by a counter-reactant to generate an M-OH moiety, such as a moiety selected from the group consisting of amines (such as dialkylamino, monoalkylamino), alkoxy, carboxylates, halogens, and mixtures thereof.
Organometallic precursors may be any of a wide variety of candidate metal-organic precursors. For example, where M is tin, such precursors include t-butyl tris(dimethylamino) tin, i-butyl tris(dimethylamino) tin, n-butyl tris(dimethylamino) tin, sec-butyl tris(dimethylamino) tin, i-propyl(tris)dimethylamino tin, n-propyl tris(diethylamino) tin, and analogous alkyl(tris)(t-butoxy) tin compounds such as t-butyl tris(t-butoxy) tin. In some embodiments, the organometallic precursors are partially fluorinated.
Counter-reactants have the ability to replace the reactive moieties, ligands or ions (e.g., L in Formula 1, above) so as to link at least two metal atoms via chemical bonding. Counter-reactants can include water, peroxides (e.g., hydrogen peroxide), di- or polyhydroxy alcohols, fluorinated di- or polyhydroxy alcohols, fluorinated glycols, and other sources of hydroxyl moieties. In various embodiments, a counter-reactant reacts with the organometallic precursor by forming oxygen bridges between neighboring metal atoms. Other potential counter-reactants include hydrogen sulfide and hydrogen disulfide, which can crosslink metal atoms via sulfur bridges.
The thin films may include optional materials in addition to an organometallic precursor and counter-reactants to modify the chemical or physical properties of the film, such as to modify the sensitivity of the film to EUV or enhancing etch resistance. Such optional materials may be introduced, such as by doping during vapor phase formation prior to deposition on the semiconductor substrate, after deposition of the thin film, or both. In some embodiments, a gentle remote H2 plasma may be introduced so as to replace some Sn-L bonds with Sn—H, which can increase reactivity of the resist under EUV.
In various embodiments, the EUV-patternable films are made and deposited on the semiconductor substrate using vapor deposition equipment and processes among those known in the art. In such processes, the polymerized organometallic material is formed in vapor phase or in situ on the surface of the semiconductor substrate. Suitable processes include, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.
In general, methods comprise mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant so as to form a polymerized organometallic material, and depositing the organometallic material onto the surface of the semiconductor substrate. In some embodiments, more than one organometallic precursor is included in the vapor stream. In some embodiments, more than one counter-reactant is included in the vapor stream. As will be understood by one of ordinary skill in the art, the mixing and depositing aspects of the process may be concurrent, in a substantially continuous process.
In an example continuous CVD process, two or more gas streams, in separate inlet paths, of organometallic precursor and source of counter-reactant are introduced to the deposition chamber of a CVD apparatus, where they mix and react in the gas phase, to form agglomerated polymeric materials (e.g., via metal-oxygen-metal bond formation). The streams may be introduced, for example, using separate injection inlets or a dual-plenum showerhead. The apparatus is configured so that the streams of organometallic precursor and counter-reactant are mixed in the chamber, allowing the organometallic precursor and counter-reactant to react to form a polymerized organometallic material. Without limiting the mechanism, function, or utility of present technology, it is believed that the product from such vapor-phase reaction becomes heavier in molecular weight as metal atoms are crosslinked by counter-reactants, and is then condensed or otherwise deposited onto the semiconductor substrate. In various embodiments, the steric hindrance of the bulky alkyl groups prevents the formation of densely packed network and produces porous, low-density films.
The CVD process is generally conducted at reduced pressures, such as from 10 mTorr to Torr. In some embodiments, the process is conducted at from 0.5 to 2 Torr. In some embodiments, the temperature of the semiconductor substrate is at or below the temperature of the reactant streams. For example, the substrate temperature may be from 0° C. to 250° C., or from ambient temperature (e.g., 23° C.) to 150° C. In various processes, deposition of the polymerized organometallic material on the substrate occurs at rates inversely proportional to surface temperature.
In some embodiments, the EUV-patternable films are made and deposited on the semiconductor substrate using wet deposition equipment and processes among those known in the art. For example, the organometallic material is formed by spin-coating on the surface of the semiconductor substrate.
The thickness of the EUV-patternable film formed on the surface of the semiconductor substrate may vary according to the surface characteristics, materials used, and processing conditions. In various embodiments, the film thickness may range from 0.5 nm to 100 nm, and may be a sufficient thickness to absorb most of the EUV light under the conditions of EUV patterning. For example, the overall absorption of the resist film may be 30% or less (e.g., 10% or less, or 5% or less) so that the resist material at the bottom of the resist film is sufficiently exposed. In some embodiments, the film thickness is from 5 nm to 40 nm or from 10 nm to 20 nm. Without limiting the mechanism, function, or utility of present disclosure, it is believed that, unlike wet spin-coating deposition processes, dry deposition processes present fewer restrictions on the surface adhesion properties of the substrate, and therefore can be applied to a wide variety of substrates. Moreover, as discussed above, the deposited films may closely conform to surface features, providing advantages in forming masks over substrates, such as substrates having underlying features, without “filling in” or otherwise planarizing such features.
At block 104, a cleaning process is performed to clean a backside and bevel edge of the semiconductor substrate. The backside and bevel edge clean may non-selectively etch EUV resist film to equally remove film with various levels of oxidation or crosslinking on the substrate backside and bevel edge. During application of the EUV-patternable film, either by wet deposition processing or dry deposition processing, there may be some unintended deposition of resist material on the substrate bevel edge and/or backside. The unintended deposition may lead to undesirable particles later moving to a top surface of the semiconductor substrate and becoming particle defects. Moreover, this bevel edge and backside deposition can cause downstream processing problems, including contamination of the patterning tools (scanner), development tools, and metrology tools, which can then act to contaminate other substrates. Removal of this bevel edge and backside deposition may be accomplished using wet cleaning techniques or dry cleaning techniques, alone or in combination with other techniques described herein.
The current state-of-the-art for cleaning spin-coated metal-organic photoresists is by wet-clean processing. An example is described below with reference to
Dry backside and bevel edge cleaning techniques may be used instead of wet techniques. Dry backside and bevel edge clean may be performed using an etch gas. The etch gas may be hydrogen gas, a hydrogen halide, hydrogen gas and a halide gas, or boron trichloride. A process chamber may be equipped with a substrate support having a plurality of minimum contact area (MCA) supports that elevate a substrate so that the etch gas can access the backside of the substrate. The substrate support may be a carrier ring, as described below in relation to
In some embodiments, the dry clean process involves a vapor and/or plasma having one or more of the following gases: HBr, HCl, HI, BCl3, SOCl2, Cl2, BBr3, H2, O2, PCl3, CH4, methanol, ammonia, formic acid, NF3, HF. In some embodiments, the dry clean process may use the same chemistries as a dry development process described herein. For example, the backside and bevel edge clean may use hydrogen halide development chemistry. For the backside and bevel edge clean process, the vapor and/or the plasma has to be limited to a specific region of the substrate to ensure that only the backside and the bevel edge deposits are removed, without any film degradation on a frontside of the substrate.
Process conditions may be optimized for backside and bevel edge clean. In some embodiments, higher temperature, higher pressure, and/or higher reactant flow may lead to increased etch rate. Suitable process conditions for a dry bevel edge and backside clean may be: reactant flow of 100-10000 sccm (e.g., 500 sccm HCl, HBr, HI or H2 and Cl2, Br2, or I2, BCl3, or H2), temperature of 20° C. to 120° C. (e.g., 100° C.), pressure of 20 mTorr to atmospheric pressure (e.g., 300 mTorr), plasma power of 0 W to 500 W at high frequency (e.g., 13.56 MHz), and for a time of about 10 to 150 seconds, dependent on the photoresist film and composition and properties. It should be understood that while these conditions are suitable for some processing reactors, e.g., a Kiyo etch tool available from Lam Research Corporation, Fremont, CA, a wider range of process conditions may be used according to the capabilities of the processing reactor.
Though the backside and bevel edge clean in block 104 is depicted prior to PAB treatment in block 106, it will be understood that the backside and bevel edge clean of block 104 may be performed at any stage during the process 100 after deposition of the photoresist in block 102 and prior to development in block 112. Hence, the backside and bevel edge clean of block 104 may be performed after photoresist deposition, after PAB treatment, after EUV exposure, or after PEB treatment. As discussed further below, an additional backside and bevel edge clean may be performed later in process 100, for example as described in relation to block 118. The first backside and bevel edge clean operation in block 104 targets removal of unwanted deposition originating from photoresist deposition in block 102, while the second backside and bevel edge clean operation in block 118 targets removal of unwanted contamination that is generated during photoresist development in block 112. In some embodiments, one or both of the backside and bevel edge cleaning operations 104 and 118 may be omitted.
The wet or dry backside and bevel edge cleaning operation may alternatively be extended to a full photoresist removal or photoresist “rework” in which an applied EUV photoresist is removed and the semiconductor substrate prepared for photoresist reapplication, such as when the original photoresist is damaged or otherwise defective. Photoresist rework should be accomplished without damaging the underlying semiconductor substrate, so an oxygen-based etch should be avoided. Instead, variants of halide-containing chemistries as described herein may be used. It will be understood that the photoresist rework operation may be applied at any stage during the process 100. Thus, the photoresist rework operation may be applied after photoresist deposition, after the first or second bevel edge and backside clean, after PAB treatment, after EUV exposure, after PEB treatment, after development, after PDB treatment, after a chemical, plasma, and/or light treatment. In some embodiments, the photoresist rework may be performed for non-selective removal of exposed and unexposed regions of the photoresist but selective to an underlayer.
In some embodiments, the photoresist rework process involves a vapor and/or plasma having one or more of the following gases: HBr, HCl, HI, BCl3, Cl2, BBr3, H2, PCl3, CH4, methanol, ammonia, formic acid, NF3, HF. In some embodiments, the photoresist rework process may use the same chemistries as a dry development process described herein. For example, the photoresist rework may use hydrogen halide development chemistry.
Process conditions may be optimized for the photoresist rework. In some embodiments, higher temperature, higher pressure, and/or higher reactant flow may lead to increased etch rate. Suitable process conditions for a photoresist rework may be: reactant flow of 100-500 sccm (e.g., 500 sccm HCl, HBr, HI, BCl3 or H2 and Cl2 or Br2), temperature of −10 to 140° C. (e.g., 80° C.), pressure of 20-1000 mTorr (e.g., 300 mTorr), plasma power of 300 W to 800 W (e.g., 500 W) at high frequency (e.g., 13.56 MHz), wafer bias of 0 to 200 Vb (a higher bias may be used with harder underlying substrate materials) and for a time of about 20 seconds to 3 minutes, sufficient to completely remove the EUV photoresist, dependent on the photoresist film and composition and properties. In some embodiments, photoresist rework can be performed without application of plasma. The photoresist rework can be performed thermally with a halide-containing gas such as a hydrogen halide (e.g., HBr) at elevated temperatures (e.g., between 80° C.-120° C.). It should be understood that while these conditions are suitable for some processing reactors, e.g., a Kiyo etch tool available from Lam Research Corporation, Fremont, CA, a wider range of process conditions may be used according to the capabilities of the processing reactor.
At block 106 of the process 100, an optional post-application bake (PAB) is performed after deposition of the EUV-patternable film and prior to EUV exposure and/or after performing backside and bevel edge clean. The PAB treatment may involve a combination of thermal treatment, chemical exposure, and moisture to increase the EUV sensitivity of the EUV-patternable film, reducing the EUV dose to develop a pattern in the EUV-patternable film. The PAB treatment temperature may be tuned and optimized for increasing the sensitivity of the EUV-patternable film. For example, the treatment temperature may be between about 90° C. and about 200° C. or between about 150° C. and about 190° C. In some embodiments, the PAB treatment may be conducted with gas ambient flowing in the range of 100-10000 sccm, moisture content in the amount of a few percent up to 100% (e.g., 20%-50%), a pressure between atmospheric and vacuum, and a treatment duration of about 1 to 15 minutes, for example about 2 minutes. In some embodiments, the PAB treatment is conducted at a temperature between about 100° C. to 200° C. for about 1 minute to 2 minutes.
At block 108 of the process 100, the metal-containing EUV resist film is exposed to EUV radiation to develop a pattern. Generally speaking, the EUV exposure causes a change in the chemical composition and cross-linking in the metal-containing EUV resist film, creating a contrast in etch selectivity that can be exploited for subsequent development.
The metal-containing EUV resist film may then be patterned by exposing a region of the film to EUV light, typically under relatively high vacuum. EUV devices and imaging methods among those useful herein include methods known in the art. In particular, as discussed above, exposed areas of the film are created through EUV patterning that have altered physical or chemical properties relative to unexposed areas. For example, in exposed areas, metal-carbon bond cleavage may occur via beta-hydride elimination, leaving behind reactive and accessible metal hydride functionality that can be converted to hydroxide and cross-linked metal oxide moieties via metal-oxygen bridges, which can be used to create chemical contrast either as a negative tone resist or as a template for hard mask. In general, a greater number of beta-H in the alkyl group results in a more sensitive film. Following exposure, the metal-containing EUV resist film may be baked, so as to cause additional cross-linking of the metal oxide film. The difference in properties between exposed and unexposed areas may be exploited in subsequent processing, such as to dissolve unexposed areas or to deposit materials on the exposed areas. For example the pattern can be developed using a dry method to form a metal oxide-containing mask. Methods and apparatus among those useful in such processes are described in PCT Patent Application PCT/US2019/067540, filed Dec. 19, 2019, incorporated by reference herein for its disclosure of the methods and apparatus.
In particular, in various embodiments, the hydrocarbyl-terminated tin oxide present on the surface is converted to hydrogen-terminated tin oxide in the exposed region(s) of an imaging layer, particularly when the exposure is performed in a vacuum using EUV. However, removing exposed imaging layers from vacuum into air, or the controlled introduction of oxygen, ozone, H2O2, or water, can result in the oxidation of surface Sn—H into Sn—OH. The difference in properties between exposed and unexposed regions may be exploited in subsequent processing, such as by reacting the irradiated region, the unirradiated region, or both, with one or more reagents to selectively add material to or remove material from the imaging layer.
Without limiting the mechanism, function or utility of present technology, EUV exposure, for example, at doses of from 10 mJ/cm2 to 100 mJ/cm2, may alleviate steric hindrance and provide space for the low-density film to collapse. In addition, reactive metal-H bond generated in the beta-hydride elimination reactions can react with neighboring active groups such as hydroxyls in the film, leading to further cross-linking and densification, and creating chemical contrast between exposed and unexposed region(s).
Following exposure of the metal-containing EUV resist film to EUV light, a photopatterned metal-containing EUV resist is provided. The photopatterned metal-containing EUV resist includes EUV-exposed and unexposed regions.
At block 110 of the process 100, an optional post-exposure bake (PEB) is performed to further increase contrast in etch selectivity of the photopatterned metal-containing EUV resist. The photopatterned metal-containing EUV resist is thermally treated in the presence of various chemical species to facilitate cross-linking of the EUV-exposed regions of the photopatterned metal-containing EUV resist.
In various embodiments, a bake strategy involves careful control of the bake ambient, introduction of reactive gases, and/or careful control of the ramping rate of the bake temperature. Examples of useful reactive gases include e.g., air, H2O, H2O2 vapor, CO2, CO, O2, O3, CH4, CH3OH, N2, H2, NH3, N2O, NO, alcohol, acetyl acetone, formic acid, Ar, He, or their mixtures. The PEB treatment is designed to (1) drive complete evaporation of organic fragments that are generated during EUV exposure and (2) oxidize the metal hydride species (the other product from the beta-H elimination reaction during EUV exposure) into metal hydroxide, and (3) facilitate cross-linking between neighboring —OH groups and form a cross-linked metal oxide network. The bake temperature is carefully selected to achieve optimal EUV lithographic performance. Too low a PEB temperature would lead to incomplete removal of organic fragments as well as insufficient cross-linking, and consequently less chemical contrast for development at a given dose. Too high a PEB temperature would also have detrimental impacts, including severe oxidation and film shrinkage in the unexposed region (the region that is removed by development of the patterned film to form the mask in this example), as well as, undesired interdiffusion at the interface between the photopatterned metal-containing EUV resist and an underlayer, both of which will contribute to loss of chemical contrasts and an increase in defect density due to insoluble scum. The PEB treatment temperature may be between about 100° C. and about 300° C., between about 170° C. and about 290° C., or between about 200° C. and about 240° C. In some embodiments, the PEB treatment may be conducted with gas ambient flowing in the range of 100-10000 sccm, moisture content in the amount of a few percent up to 100% (e.g., 20%-50%), a pressure between atmospheric and vacuum, and a treatment duration of about 1 to 15 minutes, for example about 2 minutes. In some embodiments, PEB thermal treatments may be repeated to further increase etch selectivity.
At block 112 of the process 100, the photopatterned metal-containing EUV resist is developed to form a resist mask. In various embodiments, the exposed regions are removed (positive tone) or the unexposed regions are removed (negative tone). In some embodiments, development may include selective deposition on either the exposed or unexposed regions of the photopatterned metal-containing EUV resist, followed by an etching operation. In various embodiments, these processes may be dry processes or wet processes. Examples of processes for development involve an organotin oxide-containing EUV-sensitive photoresist thin film (e.g., 10-nm thick, such as 20 nm), subjected to a EUV exposure dose and post-exposure bake, and then developed. The photoresist film may be, for example, deposited based on a gas phase reaction of an organotin precursor such as isopropyl(tris)(dimethylamino)tin and water vapor, or may be a spin-on film comprising tin clusters in an organic matrix.
The photopatterned metal-containing EUV resist is developed by exposure to a development chemistry. In some embodiments, the development chemistry includes a halide-containing chemistry. For instance, bromine-containing chemistry, chlorine-containing chemistry, and/or fluorine-containing chemistry may be used. In various embodiments, the halide-containing chemistry is a hydrogen halide such as HBr, HCl, HI, and HF. Dry development techniques are further discussed in PCT Patent Application No. PCT/US2020/039615, filed Jun. 25, 2020, which is herein incorporated by reference in its entirety.
The development operation at block 112 may be optimized in certain embodiments. Such optimizations may be particularly useful in the case where dry development techniques are used. The optimization may be done to reduce metal and/or metal halide outgassing from the photoresist on the substrate, which may deposit on the backside and bevel edge area of the substrate. Certain optimization techniques may promote removal of the potentially contaminating species, while other techniques may passivate the contaminating species to reduce their ability to outgas during downstream outgassing. The various optimizations described herein can be combined as desired for a particular application.
In various embodiments, the photoresist development operation at block 112 may be optimized by performing the development in a heated processing chamber. Such heating reduces the overall byproduct condensation/accumulation in the chamber, which results in less unwanted byproduct deposition on the substrate. In various embodiments, the processing chamber and/or showerhead are maintained at an elevated temperature, for example about 40° C. or higher, or about 65° C. or higher, or about 80° C. or higher, or about 100° C. or higher. In these or other cases, the processing chamber and showerhead may be maintained at a maximum temperature of about 300° C. or less, or about 250° C. or less, or about 200° C. or less, or about 150° C. or less, or about 100° C. or less, or about 80° C. or less. In some cases, the temperature is actively controlled and changed during dry development. In some such cases, the temperature is actively increased during dry development. In other such cases, the temperature is actively decreased during dry development.
In these or other embodiments, the photoresist development operation at block 112 may be optimized by performing a high temperature purge step in inert atmosphere at reduced pressure. The purge step may be performed at the end of the photoresist development operation in block 112, or immediately afterwards, in the same processing chamber in which the development operation occurs. Example gases that may be provided to establish an inert atmosphere include, e.g., Ar, He, N2, Kr, Xe, and H2. Combinations of such gases can also be used. Example gas flow rates may be between about 200-10,000 sccm. The purge may have a duration between about 1-10 minutes, in some cases at least about 2 minutes, or at least about 5 minutes. The purge step may be performed at a pressure between about 5 mTorr and about 10 Torr. In some cases, the pressure may be at least about 10 mTorr. In these or other embodiments, the pressure may be about 1 Torr or less. The temperature during the purge step (e.g., the temperature of the processing chamber, the showerhead, and/or the substrate support) may be maintained at an elevated temperature, for example about 100° C. or greater, or about 120° C. or greater. In some cases, the processing chamber may be maintained at a temperature between about 100-250° C., or between about 100-300° C., and the substrate support may be maintained at a temperature between about 120-250° C., or between about 120-300° C.
In these or other embodiments, a pump purge sequence may be used toward the end of the development process in block 112, or immediately afterward. Such a process may involve one or more cycles of pumping the processing chamber down to a reduced pressure, and sweeping the processing chamber with inert gas. This pumping and purging increases the efficiency of halogen and metal halide removal from the substrate and chamber.
In these or other cases, the optimization may involve a thermal treatment, such as a bake step described below in relation to block 114. In these or other cases, the optimization may involve a chemical, plasma, and/or light treatment, such as the treatment operations described below in relation to block 116. As such, the operations described in relation to blocks 114 and/or 116 may overlap with the photoresist development operation in block 112, in some cases toward the end of the development operation. In other embodiments, the operations of blocks 114 and/or 116 may occur after the photoresist development operation of block 112 is completed.
At block 114, the substrate is exposed to a post-development bake (PDB). The PDB occurs after some or all of the photoresist is developed in block 112. Although this step is referred to as a “post-development bake,” it is understood that this step may also overlap with the development step to some degree, as explained above.
Much like the photoresist deposition step in block 102, the photoresist development step in block 112 can cause metal and metal halide contamination on the backside and bevel edge of the substrate. As mentioned above, in many cases the development is done using halide-containing chemistry such as HBr. In some cases, the halide chemistry reacts with the metal in the photoresist, partially dissolving the photoresist and causing formation of metal halides and/or other metal-containing species that can redeposit on the substrate, for example on the backside and bevel edge of the substrate. Such contamination is detrimental for the reasons described above, including continual outgassing and contamination of other substrates and downstream processing equipment and metrology tools.
The PDB treatment may involve a combination of thermal treatment, optional chemical exposure, optional plasma exposure, and optional light exposure (discussed further in relation to block 116) to reduce the likelihood of metal and metal halide outgassing during downstream processing. The thermal treatment involves exposing the substrate to elevated temperatures. For example, the substrate may be baked at a temperature between about 160-300° C., for a duration between about 1-10 minutes. In some cases the temperature may be maintained between about 160-250° C., or between about 160-220° C. Such baking may involve heating the substrate support, processing chamber, showerhead, and/or processing gases. In some cases, the walls of the processing chamber may be heated and/or maintained at an elevated temperature. Example temperatures for the chamber walls may be between about 20-120° C. In some cases, the pressure during the PDB treatment may be maintained between a minimum of about 0.01 Torr or 0.1 Torr, and a maximum about 1 Torr, 10 Torr, or atmospheric pressure (e.g., about 760 Torr). Example processing gases that may be provided to the processing chamber during the PDB treatment include, but are not limited to, N2, a mixture of N2/O2, He, Ar, Xe, H2, chlorine-containing gases, fluorine-containing gases, oxygen-containing gases, and combinations thereof. Example chlorine-, fluorine-, and oxygen-containing gases are discussed below. Example flow rates are between about 200-10,000 sccm.
The PDB treatment desorbs physisorbed metal halide species (e.g., SnBrx and/or other tin halides or metal halides in various embodiments) from the substrate surface. However, the PDB treatment may be ineffective in completely removing the metal halide species from the relevant portions of the substrate (e.g., backside and bevel edge region), and chemisorbed halide species (e.g., metal halide species) may remain on the substrate after the PDB treatment. Further, the metal-containing photoresist on the frontside of the substrate continues to be a source for further outgassing and related contamination. In various embodiments, the remaining chemisorbed species/contamination may be removed in a wet clean operation described below in block 118.
In some embodiments, the PDB treatment is a thermal treatment that does not involve exposing the substrate to reactive chemistry or plasma. In cases where no reactive chemistry or plasma is used in connection with the PDB treatment in block 114, the use of the above-described pumping and purging sequence is particularly beneficial in reducing contamination on the substrate. In embodiments where the PDB treatment is a thermal treatment and no further cleaning steps are used (e.g., where blocks 116 and 118 are omitted), outgassing may still be an issue over longer timeframes, for example several days. In such embodiments, the queue time for a particular substrate after the substrate is exposed to the PDB treatment in block 114 and before the substrate is used for further processing may be controlled, for example using a maximum queue time of about 1 day, about 2 days, about 3 days, or about 5 days. This control of queue time limits the amount of outgassing/recontamination that originates from each substrate, thereby limiting contamination on the substrate, nearby substrates, and downstream processing equipment and metrology tools. Without wishing to be bound by theory or mechanism of action, it is believed that the mechanism of recontamination is a surface hopping or diffusion mechanism. Additional pump purge sequences, as well as queue time control, can limit such recontamination. Of course, while such techniques are especially beneficial in embodiments where the substrate is not subjected to further cleaning after the PDB treatment, it is understood that the pump purge sequence, as well as queue time control, may also be used in other embodiments where further cleaning steps are used. Further, such a pump purge sequence may be performed at any time during the method of
In some embodiments, the PDB treatment of block 114 may involve exposing the substrate to reactive chemistry, plasma, and/or light, as described in relation to block 116. In some other embodiments, the operations described in relation to block 116 may occur after the PDB treatment of block 114. As mentioned above, the PDB treatment of block 114 may also overlap with the photoresist development step in block 112. As such, it is understood that the operations of block 116 may also overlap with those of block 112. In other cases, the substrate may be exposed to chemical treatment, plasma treatment, and/or light treatment in operation 116 after the operations of blocks 112 and/or 114 are completed, for example in the same or different processing chamber where the operations of blocks 112 and/or 114 occur.
Block 116 involves optionally exposing the substrate to a chemical treatment, a plasma treatment, and/or a light treatment. Such treatments may be combined as desired for a particular application. In some cases, the treatment is intended to alter a metal-containing species (e.g., a metal or metal halide) such that it becomes more volatile, thereby allowing the metal-containing species to be removed from the substrate and processing chamber via a vacuum connection. Such treatments benefit from relatively high temperatures and low pressures (e.g., which may involve one or more purges) to promote removal of the volatile species.
One technique for accomplishing this increased volatility is to expose the substrate to chlorine-containing chemistry (e.g., one or more of BCl3, Cl2, HCl, SiCl4, SOCl2, and PCl3). This technique is particularly beneficial in cases where the photoresist was developed in block 112 using bromine-based chemistry such as HBr. Exposure of the substrate to the chlorine-containing chemistry in block 116 results in formation of species (e.g., metal chlorides) that are more volatile than the previously existing contamination species (e.g., metals and metal bromides). Another technique for achieving increased volatility is to expose the substrate to hydrogen (e.g., H2) at relatively high temperatures, e.g., at least about 200° C., or at least about 250° C. The chemical exposure may have a duration between about 1-10 minutes. Increasing the volatility of the contamination species promotes removal of the contamination species from the substrate and processing chamber. In various embodiments where the substrate is exposed to a chemical treatment, plasma treatment, and/or light treatment, the processing chamber may be purged (e.g., using the purge and/or pump purge sequences described above) after the treatment.
In some cases, the treatment of block 116 is intended to alter a metal-containing species such that it becomes more stable, thereby decreasing the risk that such species outgases to cause contamination. One technique for accomplishing this increased stability is to expose the substrate to oxygen-containing chemistry (e.g., one or more of O2, O3, H2O, SO2, CO2, CO, COS, NOx (e.g., such as NO2, NO, and N2O), and H2O2 vapor) to form metal oxides from the metal halides. Another technique for accomplishing the increased stability is to expose the substrate to fluorine-containing chemistry (e.g., one or more of HF, CxFyHz, NF3, SF6, and F2) to form metal fluorides from other metal halides such as metal bromides or metal chlorides. Other chemistry that may be used to promote stability of the metal-containing species include, but are not limited to, NH3 (particularly useful at high temperatures such as above about 200° C.), HI, and I2.
In certain implementations where block 116 involves a chemical treatment, the process gas(es) may flow at a rate between about 200-10,000 sccm. Example exposure times are between about 1-10 minutes. Example temperatures (e.g., for one or more of the substrate support, chamber, showerhead, process gases, etc.) may be between about 20-150° C.
In various embodiments, the treatment of block 116 involves exposing the substrate to plasma. The plasma treatment may act to suppress outgassing and the related contamination mechanism. In many cases, the plasma is a remotely generated plasma that is delivered to the processing chamber. In other cases, a direct plasma may be generated in situ with the substrate. The plasma is generated from a plasma generation gas. Various plasma generation gases may be used, including, e.g., any one or more of H2, N2, Ar, He, Kr, Xe, CH4, oxygen-based gases (e.g., O2, O3, CO, CO2, COS, SO2, NOx, H2O), fluorine-based gases (e.g., NF3, CxFy (e.g., CF4, etc.), CxHyFz (e.g., CH3F3, CH2F2, CHF3, etc.), F2, SF6), chlorine-based gases (e.g., one or more of BCl3, Cl2, HCl, SiCl4, SOCl2, and PCl3), and hydrogen halides (e.g., HBr, HI, etc.). In some particular embodiments, the plasma generation gas may include a mixture of H2/N2, a mixture of H2/Ar, a mixture of H2/He, a mixture of H2/Kr, a mixture of H2/Xe, a mixture of H2/CH4, a mixture of CH4/O2, a mixture of one or more oxygen-based gas with an inert gas, a mixture of one or more fluorine-based gas with an inert gas, or a mixture of one or more chlorine-based gas with an inert gas. Example flow rates for the plasma generation gas may be between about 50-10,000 sccm. In some cases the flow rate is at least about 100 sccm. In these or other cases, the flow rate may be about 5,000 sccm or less. In some cases where an oxygen-containing plasma is used, the duration of the plasma exposure may be particularly short (e.g., between about 1-30 seconds, or between about 1-5 seconds), sometimes referred to as a flash, in order to prevent the oxygen-containing plasma from attacking any exposed carbon-based materials such as a carbon-containing underlayer.
During the plasma treatment of block 116, the pressure in the processing chamber may be maintained as low as about 5 mTorr and as high as about 10 Torr. In some cases the pressure is between about 5-300 mTorr, for example in embodiments where the processing chamber includes or is in fluidic communication with a turbo pump. In some cases the pressure is between about 100 mTorr and about 10 Torr, for example in embodiments where the processing chamber is or includes a rough pump. Higher pressures (e.g., 100 mTorr to 10 Torr) may be beneficial in minimizing damage to the substrate as a result of the plasma exposure. In some cases where the plasma treatment is targeted to passivate the contaminating species, relatively higher pressures may be used, for example between about 0.1-10 Torr, or between about 0.1-5 Torr. The substrate may be exposed to the plasma for a duration between about 1-120 seconds. The plasma may be generated at one or more frequencies, for example a low frequency at about 13.6 kHz, and a high frequency at about 10 MHz. Other frequencies may be used as well, for example 400 kHz, 1 MHz, 2 MHz, 27 MHz, 60 MHz, etc. The plasma may be generated using an RF power between about 50-300 W, for example in cases where the plasma is a transformer coupled plasma or a capacitively coupled plasma generated in situ. The plasma may be generated at these or even higher powers (e.g., about 3000 W or less, in some cases between about 1000-3000 W) in cases where the plasma is generated remotely, for example using a microwave plasma source in a microwave strip chamber. The duty cycle of the plasma (e.g., a TCP plasma) may be between about 10%-100% CW.
In some cases, for example where the plasma is generated in situ (e.g., TCP or CCP), the pressure may be between about 5-300 mTorr, the temperature of the processing chamber, showerhead, substrate support, etc. may be between about 20-140° C., and the plasma may be generated at an RF power between about 50-300 W. In some other cases, for example where the plasma is generated remotely (e.g., in a microwave strip chamber, sometimes referred to as MWS), the pressure may be between a minimum of about 100 mTorr and a maximum of about 10 Torr or 1 Torr, the temperature of the processing chamber, showerhead, substrate support, etc. may be between about 100-300° C., and the plasma may be generated at a power of about 500-3000 W.
In various embodiments where the plasma is generated remotely, the following conditions may be used. The pressure in the processing chamber is maintained between about 0.1-1 Torr, process gases are flowed at a rate between about 50-5000 sccm, the substrate is exposed to the remote plasma for a duration between about 3-30 seconds, and the remote plasma is generated from a hydrogen-containing gas (e.g., H2, or H2 in combination with one or more of N2, Ar, He, Kr, or Xe). Example power levels, frequencies, and other plasma generation conditions are discussed further above and below.
In some cases, the plasma treatment may promote removal of a metal or metal halide species. In some such cases, the plasma treatment may alter the contamination species to form a more volatile species. In other cases, the plasma treatment may promote formation of more stable species from the metal or metal halide species. As described above, formation of more volatile species may reduce outgassing/contamination by removing the contaminating species from the substrate/chamber, while formation of more stable species may reduce outgassing/contamination by reducing the likelihood that such species are able to volatilize during downstream processing or queue time.
In various implementations, the plasma generation gas includes at least H2 (e.g., in some cases H2/N2, H2/Ar, H2/He etc.). The addition of a gentle H2 plasma treatment enables a reduction in the amount of chemisorbed metal halide (e.g., tin bromide in some cases) on the substrate backside and bevel edge region. This allows for an increased maximum queue time after treatment, before the substrate is used for further processing. The maximum queue time is based on the rate at which the contamination species are outgassing and the maximum acceptable concentration of the contamination. In some cases, exposure of the substrate to plasma generated from H2/N2 or H2/inert gas, in combination with the wet clean operations described below in relation to block 118, provide a metal concentration (e.g., on the substrate backside and bevel edge region) that is about 1E10 atoms/cm2 or less. Such results are highly desirable. Further, such treatments have been shown to achieve these results without causing undesirable damage to the photoresist pattern and other materials on the front surface of the substrate.
In some implementations, the plasma generation gas includes at least one oxygen-containing species such as those provided above. The oxygen-containing species may react with the metal or metal halide to form a metal oxide. In some implementations, the plasma generation gas includes at least one fluorine-containing species such as those listed above. The fluorine-containing species may react with the metal or metal halide (e.g., metal bromide in some cases) to form a metal fluoride. The metal oxide and metal fluoride may be more stable than the previously existing contamination species, thereby reducing the risk of outgassing and related contamination.
In various embodiments, the treatment in block 116 involves exposing the substrate to light. The duration of the light exposure may be between about 1-120 s. In some cases, the light is provided as part of a rapid thermal anneal that involves exposing the substrate to a relatively high temperature (e.g., between about 250-400° C.) for a relatively short period of time (e.g., about 60 seconds or less). In certain cases, a similar rapid thermal anneal process may be provided without substantial light exposure. The light may be provided by a lamp or a collection of LEDs, either of which may provide light at UV wavelengths, visible wavelengths, and/or IR wavelengths. In some particular cases, a lamp that provides UV light is used. In these or other cases, LEDs that provide visible light are used. The LEDs may be provided in a substrate support or other structure. In some cases, the light exposure may take place using a module dedicated to such exposure. In other cases, the light exposure may take place in a processing chamber that is also used for other purposes, such as one or more operations in
Returning to the embodiment of
In some embodiments, the wet cleaning in block 118 involves exposing relevant portions of the substrate to one or more of dilute HF, dilute HCl, or standard clean 1 (SC-1, a mixture of NH4OH:H2O2:H2O). In many cases, a two-step wet clean process is used, with the first step involving exposure of the substrate to dilute HF, and the second step involving exposure of the substrate to standard clean 1 or dilute HCl. The dilute HF may be up to about 49% HF (by weight), which corresponds to a commercially available HF solution. This solution may be diluted up to about 1:1000 (by volume), for example with water. The dilute HCl may be up to about 4% HCl (by weight), and may be diluted up to about 1:100 (by volume) with water, in some cases up to about 1:10 (by volume) with water. Each wet clean step may have a duration between about 20-300 seconds. The substrate and/or the solution used to treat the substrate may be maintained at a temperature between about 15-60° C. Example flow rates for the solution may be between about 1-3 L/min.
Experimental results, shown in the accompanying figures, illustrate that the wet clean process is very effective in reducing the concentration of metals/metal halides on the backside of the substrate, thereby preventing such metals from outgassing and causing contamination issues. The wet clean process is particularly effective when combined with one or more of the optimizations described in relation to photoresist development in block 112, one or more of the baking strategies described in relation to the PDB treatment of block 114, and/or one or more of the treatment strategies described in relation to block 116.
Another technique that may be used to minimize metal outgassing and contamination involves periodically cleaning the process chamber(s) used to process the substrates. As described above, the various operations described in
In various embodiments, cleaning a relevant processing chamber involves exposing the chamber to gas chemistry and/or plasma that provides H radicals. The H radicals react with the metal, for example forming metal hydrides. In a particular example, the metal is tin and exposure of the chamber to plasma results in formation of SnxHy species. Chamber cleaning typically occurs without a substrate present in the chamber to avoid damaging the substrate and materials thereon. In some cases, the cleaning happens automatically, and may be referred to as a waferless automatic cleaning process (WAC). The chamber pressure during chamber cleaning may be between about Torr, for example between about 0.3-9 Torr. The pressure may be varied between multiple pressures while the processing gas is provided. In some cases, the pressure is varied between a lower pressure (e.g., about 1 Torr or less, in some cases about 0.5 Torr) and a higher pressure (e.g., about 5 Torr or greater, in some cases about 9 Torr). The pressure may be varied as part of a pump and purge sequence. Example processing gases may include, but are not limited to, H2, other hydrogen-containing species that produce H radicals, N2, O2, N2+O2, Ar, and other inert gases. In some cases, the chamber is cleaned without exposure to plasma. In other cases where plasma is used, the plasma may be remotely generated and delivered to the chamber being cleaned, or it may be directly generated in situ in the chamber being cleaned. In some embodiments, the plasma is generated from a mixture of CH4 and O2 or NH3 and O2. The plasma may be generated at one or more frequency, such as a low frequency between about 13.56 kHz and/or a high frequency between about 10 MHz. Other frequencies may be used as well, for example 400 kHz, 1 MHz, 2 MHz, 27 MHz, 60 MHz, etc. The plasma may be generated using an RF power between about 300-4000 W. The plasma may have a duty cycle between about 10% to CW. The processing chamber, substrate support, showerhead, etc. may be maintained at a temperature between about during cleaning. In some embodiments, one or more particular heat source may be used to heat one or more of the processing chamber, substrate support, showerhead, etc. while the chamber is being cleaned. For instance, in some cases an IR heat source may be used. In these or other embodiments, an LED chuck/substrate support may be used. Other heating sources may be used as appropriate.
In some cases, for example where the plasma is generated in situ (e.g., TCP or CCP), the pressure may be between about 5-300 mTorr, the temperature of the processing chamber, showerhead, substrate support, etc. may be between about 20-140° C., and the plasma may be generated at an RF power between about 50-300 W. In some other cases, for example where the plasma is generated remotely (e.g., in MWS or other remote plasma chamber), the pressure may be between about 100 mTorr and about 10 Torr, the temperature of the processing chamber, showerhead, substrate support, etc. may be between about 100-300° C., and the plasma may be generated at a power of about 1000-4000 W, for example between about 1000-3000 W.
In some other embodiments, a dry cleaning process such as the one described above in relation to block 104 may be used instead of, or in addition to, the wet cleaning process in block 118.
In many cases, a substrate treated using the techniques described herein provides a metal concentration of about 1E11 atoms/cm2 or less, for example about 1E10 atoms/cm2 or less on a backside and/or bevel edge area of the substrate. In various embodiments, the techniques described herein may be used to decrease the concentration of metal on the backside and/or bevel edge region of a substrate to a level that is 1, 2, or even 3 orders of magnitude lower than would otherwise be achieved in the absence of such techniques (e.g., where the development operation in block 112 is a conventional dry development and the operations in blocks 114, 116, and 118 are omitted). In some cases, the operations described in blocks 114, 116, and 118 operate to decrease the concentration of metal on the backside and/or bevel edge area of the substrate, as compared to the concentration present after the development step at block 112.
In some cases, an existing apparatus may be modified to perform one or more processes described herein. For instance, an apparatus used for developing the photoresist (e.g., using dry or wet techniques) may be modified to include any one or more of the following features: (1) a substrate support configured to reach the elevated temperatures described herein; (2) plumbing to provide appropriate gases for treating the substrate via chemical treatment or plasma treatment; (3) a plasma generator configured to provide plasma to the processing chamber; (4) one or more light source configured to provide UV, visible, and/or IR radiation on the substrate; and/or (5) a controller configured to cause any of the methods described herein. Similarly, an apparatus used for baking a substrate may be modified to include any one or more of these features.
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In contrast to wet backside and bevel edge cleaning techniques, dry backside and bevel edge cleaning techniques may be less costly and more environmentally safe. Dry backside and bevel edge cleaning techniques may integrate chambers so that dry processing steps may be performed in fewer tools/chambers. Dry backside and bevel edge cleaning techniques may address non-uniformity issues related to wet backside and bevel edge cleaning techniques.
In some cases, the dry backside and bevel edge cleaning techniques employs plasma to remove material from the backside and bevel edge of a substrate. Existing hardware may confine plasma to the backside and bevel edge of the substrate to remove material. In some other cases, dry backside and bevel edge cleaning may be accomplished without striking a plasma. For example, the dry backside and bevel edge clean utilizes etch gas confined to specific regions of the substrate to remove material (e.g., EUV resist material) from the backside and bevel edge of the substrate. The dry backside and bevel edge clean exposes the substrate to an elevated temperature to promote non-selective removal of the material at the backside and bevel edge.
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In some embodiments, the photoresist material is not EUV resist material, but a silicon-based material or carbon-based material. The etch gas for removal of such materials may be different than for removal of EUV resist material. In some embodiments, the etch gas includes an oxidizing gas such as O2, CO2, N2O, and the like for removal of carbon-based materials. In some embodiments, the etch gas includes a fluorine-based gas such as CxFy or CxFyHz or chlorine-based gas for removal of silicon-based materials.
An inert curtain gas may be delivered on the frontside of the substrate to limit the etch gas to the backside and bevel edge of the substrate. The curtain gas may include gases such as nitrogen (N2), oxygen (O2), water (H2O), argon (Ar), helium (He), xenon (Xe), neon (Ne), or mixtures thereof. The curtain gas is flowed on the frontside of the substrate to protect at least central regions of the frontside of the substrate from the etch gas. As the curtain gas is flowed to the frontside, the curtain gas spreads across the frontside to protect EUV resist material deposited on the frontside.
The curtain gas may be flowed simultaneously with the etch gas. A first etch gas flow may be introduced to the backside of the substrate. The first etch gas flow may spread across the backside of the substrate, where the backside of the substrate may be accessible when the substrate is supported by MCA supports on a carrier ring. In some embodiments, a second etch gas flow may be introduced to the periphery of the frontside of the substrate. The second etch gas flow may flow along the periphery of the frontside and wrap around the bevel edge of the substrate. The first etch gas flow may be introduced from one or more bottom gas inlets positioned below the substrate support, and the second etch gas flow may be introduced from one or more peripheral gas inlets of a gas distributor positioned above the substrate support. The gas distributor may include a modular ring with the one or more peripheral gas inlets. The modular ring may modulate spacing between the one or more peripheral gas inlets and the frontside of the substrate. In some embodiments, curtain gas is flowed from one or more central gas inlets of the gas distributor, where a first gap separating the one or more peripheral gas inlets from the frontside is greater than a second gap separating the one or more central gas inlets from the frontside.
The substrate may be heated to an elevated temperature during the dry clean, where the elevated temperature is between about 20° C. and about 170° C., between about 20° C. and about 140° C., between about 40° C. and about 140° C., or about 100° C. In some embodiments, the dry clean may be performed at an elevated pressure. The pressure in a process chamber may be between about 0.02 Torr and atmospheric pressure, between 0.1 Torr and atmospheric pressure, or between about 1 Torr and atmospheric pressure. In some embodiments, the dry clean may be performed with a high flow rate of the etch gas. The etch gas flow rate may be between about 50 sccm and about 10000 sccm, between about 100 sccm and about 10000 sccm, or between about 200 sccm and about 5000 sccm. Unlike wet cleaning techniques, the non-plasma thermal cleaning technique of the present disclosure can tune process parameters such as temperature, pressure, and gas flow rate to control etch rate. A high etch rate may be achieved to remove unexposed EUV resist material with higher temperature and/or pressure and flow rate.
Both backside clean and bevel edge clean are performed in a first process chamber (Chamber 1) rather than in separate process chambers. This reduces the likelihood of contamination of tools that may otherwise occur in between cleaning operations. A single pass may be performed for essentially multiple process steps in a single tool. This also reduces cost and increases throughput. No wet cleaning or rinse/dry operations are performed in the dry backside and bevel edge clean of the present disclosure.
In some embodiments, the dry backside and bevel edge clean includes exposure to etch gas followed by purging. Purging introduces a purge gas to pump/purge residual etch gas from the first process chamber. It will be understood that purging may be useful to remove residual etch gases or etch byproducts from the process chamber to avoid undesired etching of the frontside of the substrate during substrate transfer. Purging may flow an inert gas and/or a reactive gas. The reactive gas may react with the residual etch gas to facilitate ease of removal. The reactive gas may be, for example, a tin-based precursor such as an organotin precursor. The inert gas may be Ar, He, Ne, Xe, or N2. The chamber pressure may be between about 0.1 Torr and about 6 Torr. The purge gas flow may be between about 10 sccm and about 10000 sccm or between about 50 sccm and about 5000 sccm. In some embodiments, the pump/purge may proceed at a high temperature such as between about 20° C. and about 140° C. or between about 80° C. and about 120° C. The high temperature may facilitate removal of residual etch gas from the first process chamber. In some embodiments, chamber walls and other components may be heated to release residual etch gas. The residual etch gas (e.g., halide gas or halide-containing gas) may be exhausted through an exhaust line during pumping/purging. In some embodiments, the pump/purge operation may also be referred to as dehalogenation. Halides may readily stick to chamber walls, chamber components, or wafers. If the halides stick to the wafer, there is an increased risk of the halides (e.g., bromine) being released from the wafer during EUV scanning, thereby corroding or damaging the scanner.
In some embodiments, the duration of the dry backside and bevel edge clean is between about 10 seconds and about 150 seconds. In some embodiments, the endpoint of the backside and bevel edge clean is detected by one or more sensors. The one or more sensors may detect the presence of absence of EUV resist deposits on the backside and bevel edge of the substrate. The one or more sensors may include an IR sensor and/or optical sensor.
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The PAB thermal treatment increases the substrate temperature to an elevated temperature such as between about 100° C. and about 170° C. or between about 120° C. and about 150° C. In some embodiments, the substrate temperature may be controlled using a radiative heat source such as an IR lamp or one or more LEDs. The radiative heat source may be positioned below the substrate. Alternatively, the radiative heat source may be positioned above the substrate. The substrate temperature may be actively controlled by a pyrometer in a feedback control loop established with the radiative heat source. The atmosphere during PAB thermal treatment may be controlled by flowing inert gases such as N2, Ar, He, Xe, or Ne, where the inert gases may be mixed with O2 and/or H2O. The flow rate of the inert gases may be between about 10 sccm and about 10000 sccm or between about 50 sccm and about 5000 sccm. The pressure during PAB thermal treatment may be controlled to be between about 0.02 Torr and atmospheric pressure, between about 0.1 Torr and atmospheric pressure, or between about 1 Torr and atmospheric pressure.
The present disclosure provides various hardware implementations to achieve the methods described herein. In many cases, two or more operations described in
The substrate support may include a carrier ring. The carrier ring may have an annular body for supporting the substrate.
The position of the MCA supports may be optimized to the preceding deposition process to avoid contacting the substrate where it has backside deposition. Put another way, the plurality of MCA supports may be configured to contact areas of the backside of the substrate where there is little to no backside deposition (e.g., photoresist deposits). This placement may be determined based on knowledge or data ascertained from one or more previous deposition operations indicating where there is little to no backside deposition. For example, the MCA supports may contact the backside of the substrate in areas closer to a center of the substrate than an edge of the substrate. At the same time, the position of the MCA supports does not prevent the etch gas from accessing areas with backside deposition.
The plurality of MCA supports provide minimal contact with the backside of the substrate. The plurality of MCA supports may elevate the substrate above a major surface of the carrier ring to a height to permit gas flow across the backside of the substrate. In some embodiments, the height is between about 0.025 mm and about 0.5 mm or between about 0.05 mm and about 0.25 mm. In some embodiments, the MCA supports are extendable/retractable from the major surface of the substrate support. In some embodiments the height is adjustable so that gap size is controlled. In some embodiments, the backside of the substrate is supported by MCA supports with a shifting mechanism or rotation mechanism in order to be able to clean the area directly touched by the MCA supports and the substrate. The etch gas may be blocked by accessing the area in direct contact with the MCA support. Even though the area is very small in relation to the substrate it may still have an unacceptably high metal contamination. Therefore, this area needs to be cleaned as well. In other words, the MCA supports may shift or rotate positions to contact different points of the backside of the substrate. The shifting mechanism may be incorporated into lift pins which are used during substrate transfer. After the first part of the clean which cleans the whole substrate except the area touched by the MCA supports, the carrier ring may lower the substrate onto the lift pins. The lift pins move the substrate by a multiple of the MCA area ˜10 s of um. Afterwards the carrier ring moves back into process position and a second clean is performed to clean the areas first touched by the MCA supports. In some embodiments, the backside of the substrate is supported by a section of MCA supports, where the carrier ring is divided into two or more sections of X number of MCA supports each, where X is any integer value. In this case the clean may process may be split into several time steps. During each time step one or more of the parts of the split ring is moved away from the substrate surface enabling the clean in that section. All sections have to at least been lifted/cleaned once during the clean. A minimum number of section(s) needs to stay in place for the substrate to be held securely in the process position. For example, the carrier ring may be split into two sections of three pins each. The carrier ring and the plurality of MCA supports may be configured in a manner to modulate etch gas flow in the backside of the substrate. Specifically, the height of the MCA supports, the inner diameter of the carrier ring, the positioning of the MCA supports, and other aspects of the carrier ring may be designed to modulate gas flow between the curtain gas from the top and the etch gas from the bottom to ensure that both the backside and the bevel edge are etched but not certain regions of the frontside of the substrate.
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A gas distributor is positioned above the substrate support for delivering curtain gas to the frontside of the substrate. The gas distributor may include one or more central gas inlets for directing curtain gas flow at a center of the frontside of the substrate. In some embodiments, the gas distributor may include one or more peripheral gas inlets for directing an etch gas flow at a periphery of the frontside of the substrate. It will be understood that the periphery of the frontside of the substrate may occupy an area of 15% or less, 10% or less, or 5% or less of the frontside of the substrate. In some embodiments, the gas distributor includes a top plate with multiple holes arranged in a central region of the top plate and multiple holes arranged in a peripheral region of the top plate. In some embodiments, the gas distributor includes modular rings of different diameters. In some instances, the modular rings may have different shapes. Etch gas may be delivered through one of the modular rings, and curtain gas may be delivered through another one of the modular rings. Thus, the gas distributor includes at least a modular ring for the one or more peripheral gas inlets, where the at least one modular ring is configured to modulate spacing of the one or more peripheral gas inlets from the frontside of the substrate. Removal at the bevel edge can be modulated by modulating the spacing of the one or more peripheral gas inlets in the modular ring. Additionally or alternatively, the gas distributor includes one or more nozzles for directing etch gas flow at the bevel edge of the substrate.
The gas distributor may be configured so that a first gap separating the one or more peripheral gas inlets front the frontside of the substrate is greater than a second gap separating the one or more central gas inlets from the frontside of the substrate. In some embodiments, the first gap is at least two times greater than the second gap. The second gap may be as small as possible without touching the EUV resist film on the frontside of the substrate. As shown in
In addition or in the alternative to the radiative heat source, the apparatus may further include one or more heaters. The one or more heaters may provide substrate temperature control. In some embodiments, the one or more heaters are coupled to the gas distributor and above the substrate. The one or more heaters may be radiative heat sources. In some embodiments, the one or more heaters are configured to provide ambient heating in the process chamber. In some embodiments, the one or more heaters provide substrate temperature control in the range of 20° C. to 170° C. or 20° C. to 140° C., or other temperature ranges described herein.
The apparatus may further include one or more sensors for detecting a presence of film deposits on the backside and/or bevel edge of the substrate. In some embodiments, the one or more sensors include an optical device such as an IR sensor that serves as an endpoint detection.
A process station may be configured as a module in a cluster tool.
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Showerhead 606 distributes process gases toward substrate 612. In the embodiment shown in
In some embodiments, pedestal 608 may be raised or lowered to expose substrate 612 to a volume between the substrate 612 and the showerhead 606. It will be appreciated that, in some embodiments, pedestal height may be adjusted programmatically by a suitable computer controller 650. In some embodiments, the showerhead 606 may have multiple plenum volumes with multiple temperature controls. In some embodiments, the pedestal 608 may be replaced by a carrier ring for supporting the substrate 612.
In some embodiments, pedestal 608 may be temperature controlled via heater 610. Alternatively, the substrate 612 supported by a carrier ring may be heated by a radiative heat source positioned below the substrate 612. In some embodiments, the substrate 612 may be heated to a temperature of greater than 0° C. and up to 300° C. or more, for example 50 to 120° C., such as about to 80° C., during non-plasma thermal exposure of a resist to dry backside and bevel edge clean chemistry, such as HBr or HCl, as described in disclosed embodiments. In some embodiments, the heater 610 of the pedestal 608 may include a plurality of independently controllable temperature control zones.
Further, in some embodiments, pressure control for process station 600 may be provided by a butterfly valve 618. As shown in the embodiment of
In some embodiments, a position of showerhead 606 may be adjusted relative to pedestal 608 to vary a volume between the substrate 612 and the showerhead 606. Further, it will be appreciated that a vertical position of pedestal 608 and/or showerhead 606 may be varied by any suitable mechanism within the scope of the present disclosure. In some embodiments, pedestal 608 may include a rotational axis for rotating an orientation of substrate 612. It will be appreciated that, in some embodiments, one or more of these example adjustments may be performed programmatically by one or more suitable computer controllers 650.
Where plasma may be used, for example in gentle plasma-based dry clean embodiments and/or etch operations conducted in the same chamber, showerhead 606 and pedestal 608 electrically communicate with a radio frequency (RF) power supply 614 and matching network 616 for powering a plasma. In some embodiments, the plasma energy may be controlled by controlling one or more of a process station pressure, a gas concentration, an RF source power, an RF source frequency, and a plasma power pulse timing. For example, RF power supply 614 and matching network 616 may be operated at any suitable power to form a plasma having a desired composition of radical species. Examples of suitable powers are up to about 500 W.
In some embodiments, instructions for a controller 650 may be provided via input/output control (IOC) sequencing instructions. In one example, the instructions for setting conditions for a process phase may be included in a corresponding recipe phase of a process recipe. In some cases, process recipe phases may be sequentially arranged, so that all instructions for a process phase are executed concurrently with that process phase. In some embodiments, instructions for setting one or more reactor parameters may be included in a recipe phase. For example, a recipe phase may include instructions for setting a flow rate of a dry clean chemistry reactant gas, such as HBr or HCl, and time delay instructions for the recipe phase. In some embodiments, the controller 650 may include any of the features described below with respect to system controller 750 of
As described above, one or more process stations may be included in a multi-station processing tool.
The depicted processing chamber 714 includes four process stations, numbered from 1 to 4 in the embodiment shown in
In some embodiments, system controller 750 controls all of the activities of process tool 700. System controller 750 executes system control software 758 stored in mass storage device 754, loaded into memory device 756, and executed on processor 752. Alternatively, the control logic may be hard coded in the controller 750. Applications Specific Integrated Circuits, Programmable Logic Devices (e.g., field-programmable gate arrays, or FPGAs) and the like may be used for these purposes. In the following discussion, wherever “software” or “code” is used, functionally comparable hard coded logic may be used in its place. System control software 758 may include instructions for controlling the timing, mixture of gases, gas flow rates, chamber and/or station pressure, chamber and/or station temperature, wafer temperature, target power levels, RF power levels, substrate pedestal, chuck and/or susceptor position, and other parameters of a particular process performed by process tool 700. System control software 758 may be configured in any suitable way. For example, various process tool component subroutines or control objects may be written to control operation of the process tool components used to carry out various process tool processes. System control software 758 may be coded in any suitable computer readable programming language.
In some embodiments, system control software 758 may include input/output control (IOC) sequencing instructions for controlling the various parameters described above. Other computer software and/or programs stored on mass storage device 754 and/or memory device 756 associated with system controller 750 may be employed in some embodiments. Examples of programs or sections of programs for this purpose include a substrate positioning program, a process gas control program, a pressure control program, a heater control program, and a plasma control program.
A substrate positioning program may include program code for process tool components that are used to load the substrate onto pedestal 718 and to control the spacing between the substrate and other parts of process tool 700.
A process gas control program may include code for controlling halide-containing gas composition (e.g., HBr or HCl gas as described herein) and flow rates and optionally for flowing gas into one or more process stations prior to deposition in order to stabilize the pressure in the process station. A pressure control program may include code for controlling the pressure in the process station by regulating, for example, a throttle valve in the exhaust system of the process station, a gas flow into the process station, etc.
A heater control program may include code for controlling the current to a heating unit that is used to heat the substrate. Alternatively, the heater control program may control delivery of a heat transfer gas (such as helium) to the substrate.
A plasma control program may include code for setting RF power levels applied to the process electrodes in one or more process stations in accordance with the embodiments herein.
A pressure control program may include code for maintaining the pressure in the reaction chamber in accordance with the embodiments herein.
In some embodiments, there may be a user interface associated with system controller 750. The user interface may include a display screen, graphical software displays of the apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.
In some embodiments, parameters adjusted by system controller 750 may relate to process conditions. Non-limiting examples include process gas composition and flow rates, temperature, pressure, plasma conditions (such as RF bias power levels), etc. These parameters may be provided to the user in the form of a recipe, which may be entered utilizing the user interface.
Signals for monitoring the process may be provided by analog and/or digital input connections of system controller 750 from various process tool sensors. The signals for controlling the process may be output on the analog and digital output connections of process tool 700. Non-limiting examples of process tool sensors that may be monitored include mass flow controllers, pressure sensors (such as manometers), thermocouples, etc. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain process conditions.
System controller 750 may provide program instructions for implementing the above-described deposition processes. The program instructions may control a variety of process parameters, such as DC power level, RF bias power level, pressure, temperature, etc. The instructions may control the parameters to operate development and/or etch processes according to various embodiments described herein.
The system controller 750 will typically include one or more memory devices and one or more processors configured to execute the instructions so that the apparatus will perform a method in accordance with disclosed embodiments. Machine-readable media containing instructions for controlling process operations in accordance with disclosed embodiments may be coupled to the system controller 750.
In some embodiments, the system controller 750 is part of a system, which may be part of the above-described examples. Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The system controller 750, depending on the processing conditions and/or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
Broadly speaking, the system controller 750 may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the system controller 1450 in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
The system controller 750, in some embodiments, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the system controller 750 may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer. In some examples, the system controller 750 receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the system controller 750 is configured to interface with or control. Thus as described above, the system controller 750 may be distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.
Without limitation, example systems may include a plasma etch chamber or module, a wet deposition chamber or module, a dry deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a wet clean chamber or module, a dry clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an ALD chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, an EUV lithography chamber (scanner) or module, a wet photoresist development chamber or module, a dry photoresist development chamber, a chemical, plasma, and/or light-based treatment chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
As noted above, depending on the process step or steps to be performed by the tool, the system controller 750 might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.
Inductively coupled plasma (ICP) reactors which, in certain embodiments, may be suitable for etch operations suitable for implementation of some embodiments, are now described. Although ICP reactors are described herein, in some embodiments, it should be understood that capacitively coupled plasma reactors may also be used.
The inductively coupled plasma apparatus 800 includes an overall process chamber 824 structurally defined by chamber walls 801 and a window 811. The chamber walls 801 may be fabricated from stainless steel, aluminum, or plastic. The window 811 may be fabricated from quartz or other dielectric material. An optional internal plasma grid 850 divides the overall process chamber into an upper sub-chamber 802 and a lower sub chamber 803. In most embodiments, plasma grid 850 may be removed, thereby utilizing a chamber space made of sub chambers 802 and 803. A chuck 817 is positioned within the lower sub-chamber 803 near the bottom inner surface. The chuck 817 is configured to receive and hold a semiconductor wafer 819 upon which the etching and deposition processes are performed. The chuck 817 can be an electrostatic chuck for supporting the wafer 819 when present. In some embodiments, an edge ring (not shown) surrounds chuck 817, and has an upper surface that is approximately planar with a top surface of the wafer 819, when present over chuck 817. The chuck 817 also includes electrostatic electrodes for chucking and dechucking the wafer 819. A filter and DC clamp power supply (not shown) may be provided for this purpose. Other control systems for lifting the wafer 819 off the chuck 817 can also be provided. The chuck 817 can be electrically charged using an RF power supply 823. The RF power supply 823 is connected to matching circuitry 821 through a connection 827. The matching circuitry 821 is connected to the chuck 817 through a connection 825. In this manner, the RF power supply 823 is connected to the chuck 817. In various embodiments, a bias power of the electrostatic chuck may be set at about 50V or may be set at a different bias power depending on the process performed in accordance with disclosed embodiments. For example, the bias power may be between about 20 Vb and about 100 V, or between about 30 V and about 150 V.
Elements for plasma generation include a coil 833 is positioned above window 811. In some embodiments, a coil is not used in disclosed embodiments. The coil 833 is fabricated from an electrically conductive material and includes at least one complete turn. The example of a coil 833 shown in
Process gases may be flowed into the process chamber through one or more main gas flow inlets 860 positioned in the upper sub-chamber 802 and/or through one or more side gas flow inlets 870. Likewise, though not explicitly shown, similar gas flow inlets may be used to supply process gases to a capacitively coupled plasma processing chamber. A vacuum pump, e.g., a one or two stage mechanical dry pump and/or turbomolecular pump 840, may be used to draw process gases out of the process chamber 824 and to maintain a pressure within the process chamber 824. For example, the vacuum pump may be used to evacuate the lower sub-chamber 803 during a purge operation of ALD. A valve-controlled conduit may be used to fluidically connect the vacuum pump to the process chamber 824 so as to selectively control application of the vacuum environment provided by the vacuum pump. This may be done employing a closed loop-controlled flow restriction device, such as a throttle valve (not shown) or a pendulum valve (not shown), during operational plasma processing. Likewise, a vacuum pump and valve controlled fluidic connection to the capacitively coupled plasma processing chamber may also be employed.
During operation of the apparatus 800, one or more process gases may be supplied through the gas flow inlets 860 and/or 870. In certain embodiments, process gas may be supplied only through the main gas flow inlet 860, or only through the side gas flow inlet 870. In some cases, the gas flow inlets shown in the figure may be replaced by more complex gas flow inlets, one or more showerheads, for example. The Faraday shield 849a and/or optional grid 850 may include internal channels and holes that allow delivery of process gases to the process chamber 824. Either or both of Faraday shield 849a and optional grid 850 may serve as a showerhead for delivery of process gases. In some embodiments, a liquid vaporization and delivery system may be situated upstream of the process chamber 824, such that once a liquid reactant or precursor is vaporized, the vaporized reactant or precursor is introduced into the process chamber 824 via a gas flow inlet 860 and/or 870.
Radio frequency power is supplied from the RF power supply 841 to the coil 833 to cause an RF current to flow through the coil 833. The RF current flowing through the coil 533 generates an electromagnetic field about the coil 833. The electromagnetic field generates an inductive current within the upper sub-chamber 802. The physical and chemical interactions of various generated ions and radicals with the wafer 819 etch features of and selectively deposit layers on the wafer 819.
If the plasma grid 850 is used such that there is both an upper sub-chamber 802 and a lower sub-chamber 803, the inductive current acts on the gas present in the upper sub-chamber 802 to generate an electron-ion plasma in the upper sub-chamber 802. The optional internal plasma grid 850 limits the amount of hot electrons in the lower sub-chamber 803. In some embodiments, the apparatus 800 is designed and operated such that the plasma present in the lower sub-chamber 803 is an ion-ion plasma.
Both the upper electron-ion plasma and the lower ion-ion plasma may contain positive and negative ions, though the ion-ion plasma will have a greater ratio of negative ions to positive ions. Volatile etching and/or deposition byproducts may be removed from the lower sub-chamber 803 through port 822. The chuck 817 disclosed herein may operate at elevated temperatures ranging between about 10° C. and about 250° C. The temperature will depend on the process operation and specific recipe.
Apparatus 800 may be coupled to facilities (not shown) when installed in a clean room or a fabrication facility. Facilities include plumbing that provide processing gases, vacuum, temperature control, and environmental particle control. These facilities are coupled to apparatus 800, when installed in the target fabrication facility. Additionally, apparatus 800 may be coupled to a transfer chamber that allows robotics to transfer semiconductor wafers into and out of apparatus 800 using typical automation.
In some embodiments, a system controller 830 (which may include one or more physical or logical controllers) controls some or all of the operations of a process chamber 824. The system controller 830 may include one or more memory devices and one or more processors. In some embodiments, the apparatus 800 includes a switching system for controlling flow rates and durations when disclosed embodiments are performed. In some embodiments, the apparatus 800 may have a switching time of up to about 500 ms, or up to about 750 ms. Switching time may depend on the flow chemistry, recipe chosen, reactor architecture, and other factors.
In some embodiments, the system controller 830 is part of a system, which may be part of the above-described examples. System controller 830 is further described above in relation to
EUVL patterning may be conducted using any suitable tool, often referred to as a scanner, for example the TWINSCAN NXE: 3300B® platform supplied by ASML of Veldhoven, NL). The EUVL patterning tool may be a standalone device from which the substrate is moved into and out of for deposition and etching as described herein. Or, as described below, the EUVL patterning tool may be a module on a larger multi-component tool.
A vacuum transport module (VTM) 938 interfaces with four processing modules 920a-920d, which may be individually optimized to perform various fabrication processes. By way of example, processing modules 920a-920d may be implemented to perform deposition, evaporation, ELD, dry development, etch, strip, and/or other semiconductor processes. For example, module 920a may be an ALD reactor that may be operated to perform in a non-plasma, thermal atomic layer depositions as described herein, such as Vector tool, available from Lam Research Corporation, Fremont, CA. And module 920b may be a PECVD tool, such as the Lam Vector®. It should be understood that the figure is not necessarily drawn to scale.
Airlocks 942 and 946, also known as a loadlocks or transfer modules, interface with the VTM 938 and a patterning module 940. For example, as noted above, a suitable patterning module may be the TWINSCAN NXE: 3300B® platform supplied by ASML of Veldhoven, NL). This tool architecture allows for work pieces, such as semiconductor substrates or wafers, to be transferred under vacuum so as not to react before exposure. Integration of the deposition modules with the lithography tool is facilitated by the fact that EUVL also requires a greatly reduced pressure given the strong optical absorption of the incident photons by ambient gases such as H2O, O2, etc.
As noted above, this integrated architecture is just one possible embodiment of a tool for implementation of the described processes. The processes may also be implemented with a more conventional stand-alone EUVL scanner and a deposition reactor, such as a Lam Vector tool, either stand alone or integrated in a cluster architecture with other tools, such as etch, strip etc. (e.g., Lam Kiyo or Gamma tools), as modules, for example as described with reference to
Airlock 942 may be an “outgoing” loadlock, referring to the transfer of a substrate out from the VTM 938 serving a deposition module 920a to the patterning module 940, and airlock 946 may be an “ingoing” loadlock, referring to the transfer of a substrate from the patterning module 940 back in to the VTM 938. The ingoing loadlock 946 may also provide an interface to the exterior of the tool for access and egress of substrates. Each process module has a facet that interfaces the module to VTM 938. For example, deposition process module 920a has facet 936. Inside each facet, sensors, for example, sensors 1-18 as shown, are used to detect the passing of wafer 926 when moved between respective stations. Patterning module 940 and airlocks 942 and 946 may be similarly equipped with additional facets and sensors, not shown.
Main VTM robot 922 transfers wafer 926 between modules, including airlocks 942 and 946. In one embodiment, robot 922 has one arm, and in another embodiment, robot 922 has two arms, where each arm has an end effector 924 to pick wafers such as wafer 926 for transport. Front-end robot 944, in is used to transfer wafers 926 from outgoing airlock 942 into the patterning module 940, from the patterning module 940 into ingoing airlock 946. Front-end robot 944 may also transport wafers 926 between the ingoing loadlock and the exterior of the tool for access and egress of substrates. Because ingoing airlock module 946 has the ability to match the environment between atmospheric and vacuum, the wafer 926 is able to move between the two pressure environments without being damaged.
It should be noted that a EUVL tool typically operates at a higher vacuum than a deposition tool. If this is the case, it is desirable to increase the vacuum environment of the substrate during the transfer between the deposition to the EUVL tool to allow the substrate to degas prior to entry into the patterning tool. Outgoing airlock 942 may provide this function by holding the transferred wafers at a lower pressure, no higher than the pressure in the patterning module 940, for a period of time and exhausting any off-gassing, so that the optics of the patterning tool 940 are not contaminated by off-gassing from the substrate. A suitable pressure for the outgoing, off-gassing airlock is no more than 1E-8 Torr.
In some embodiments, a system controller 950 (which may include one or more physical or logical controllers) controls some or all of the operations of the cluster tool and/or its separate modules. It should be noted that the controller can be local to the cluster architecture, or can be located external to the cluster architecture in the manufacturing floor, or in a remote location and connected to the cluster architecture via a network. The system controller 950 may include one or more memory devices and one or more processors. The processor may include a central processing unit (CPU) or computer, analog and/or digital input/output connections, stepper motor controller boards, and other like components. Instructions for implementing appropriate control operations are executed on the processor. These instructions may be stored on the memory devices associated with the controller or they may be provided over a network. In certain embodiments, the system controller executes system control software.
The system control software may include instructions for controlling the timing of application and/or magnitude of any aspect of tool or module operation. System control software may be configured in any suitable way. For example, various process tool component subroutines or control objects may be written to control operations of the process tool components necessary to carry out various process tool processes. System control software may be coded in any suitable compute readable programming language. In some embodiments, system control software includes input/output control (IOC) sequencing instructions for controlling the various parameters described above. For example, each phase of a semiconductor fabrication process may include one or more instructions for execution by the system controller. The instructions for setting process conditions for condensation, deposition, evaporation, patterning and/or etching phase may be included in a corresponding recipe phase, for example.
In various embodiments, an apparatus for forming a negative pattern mask is provided. The apparatus may include a processing chamber for patterning, deposition and etch, and a controller including instructions for forming a negative pattern mask. The instructions may include code for, in the processing chamber, patterning a feature in a chemically amplified (CAR) resist on a semiconductor substrate by EUV exposure to expose a surface of the substrate, developing the photopatterned resist, and etching the underlying layer or layer stack using the patterned resist as a mask. Development may be performed using a halide-containing chemistry.
It should be noted that the computer controlling the wafer movement can be local to the cluster architecture, or can be located external to the cluster architecture in the manufacturing floor, or in a remote location and connected to the cluster architecture via a network. A controller as described above with respect to any of
At time A, the concentration of tin is between about 0.5E10 atoms/cm2 and 1E10 atoms/cm2. At time B, the concentration of tin is substantially higher due to contamination generated during the dry development step. For instance, at time B the concentration of tin is between about 12E12 atoms/cm2 and 15E12 atoms/cm2. The tin concentration is substantially reduced between times B and C as a result of the PDB treatment and the H2/N2 plasma treatment. At time C, the tin concentration ranges between about 3E10 atoms/cm2 and 13E10 atoms/cm2. The tin concentration is further reduced between times C and D as a result of the wet backside and bevel edge cleaning operation. At time D, the tin concentration is reduced to <0.5E10 atoms/cm2. These concentrations are comparable, and even lower, than the starting concentrations at time A.
At time A, the concentration of tin is between about 0.5E10 atoms/cm2 and 1E10 atoms/cm2. At time B, the concentration of tin is substantially higher due to contamination generated during the dry development step. For example, at time B the concentration of tin is between about 12E12 atoms/cm2 and 15E12 atoms/cm2. The tin concentration is substantially reduced between times B and C as a result of the post development bake treatment. At time C, the tin concentration ranges between about 6E10 atoms/cm2 and 65E10 atoms/cm2. The tin concentration is further reduced between times C and D as a result of the wet backside and bevel edge cleaning operation. At time D, the tin concentration ranges between about 0.1E10 atoms/cm2 and 0.2E10 atoms/cm2. The tin concentration continues to decrease between times D and E as the backside of the substrate is exposed to the H2 plasma. At time E, the tin concentration ranges between about 0.01E10 atoms/cm2 and 0.05E10 atoms/cm2.
Notably,
The wet development method 2000 of
The dry development method 2050 of
While
Processes and apparatuses for controlling metallic contamination on a semiconductor substrate is disclosed. In many embodiments, the processes and apparatuses may be used in connection with deposition, development, and/or treatment of a metal-containing photoresist such as an EUV photoresist. Other applications such as in-situ clean, mandrel pull, smoothing, and photoresist descum applications may also benefit from the disclosed embodiments.
It is understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art. Although various details have been omitted for clarity's sake, various design alternatives may be implemented. Therefore, the present examples are to be considered as illustrative and not restrictive, and the disclosure is not to be limited to the details given herein, but may be modified within the scope of the disclosure.
A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claims benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in their entireties and for all purposes.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/US2022/022790 | 3/31/2022 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 63200921 | Apr 2021 | US |
