Claims
- 1. A deposition method for a compound semiconductor forming a semiconductor device comprising the steps of:
- forming one or more of monolayers of a III group element on a crystal from which a V group element is exposed; and
- heating said crystal at a temperature being equal to or more than a deposition temperature of said III group element.
- 2. A deposition method for a compound semiconductor forming a semiconductor device according to claim 1, wherein a source gas used for deposition of said III group element comprises a gas containing at least one kind of methyl compound, ethyl compound, trtisobuthyl compound, tertiary buthyl compound, chloride, and amino compound, which are combined with said III group element.
- 3. A deposition method for a compound semiconductor forming a semiconductor device according to claim 1, wherein said III group element is deposited by atomic layer epitaxy using a self-limiting mechanism.
- 4. A deposition method for a compound semiconductor forming a semiconductor device comprising the steps of:
- forming one or more of molecular layers of a compound containing a III group element on a crystal from which a V group element is exposed; and
- heating said crystal at a temperature being equal to or more than a deposition temperature of said molecular layers.
- 5. A deposition method for a compound semiconductor forming a semiconductor device according to claim 4, wherein a source gas used for deposition of said one or more of moleculer layers comprises a gas containing at least one kind of methyl compound, ethyl compound, triisobuthyl compound, tertiary buthyl compound, chloride, and amino compound, which are combined with said III group element.
- 6. A deposition method for a compound semiconductor forming a semiconductor device according to claim 4, wherein said one or more of molecular layers is deposited by atomic layer epitaxy using a self-limiting mechanism.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-282005 |
Oct 1992 |
JPX |
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Parent Case Info
This is a division of application Ser. No. 08/137,765 filed Oct. 19, 1993 now U.S. Pat. No. 5,429,068.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
5270247 |
Sakuma et al. |
Dec 1993 |
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5294286 |
Nishizawa et al. |
Mar 1994 |
|
5443033 |
Nishizawa et al. |
Aug 1995 |
|
Non-Patent Literature Citations (3)
Entry |
"OMVPE Growth of GaInAs/InP and GaInAs/GaIn AsP quantum well"; Kamei, et al; J. Cryst. Growth 107 (1991), pp. 567-572. |
"Effect of growth parameters on the interfacial structure of GaInAs/InP quantum wells"; Hergeth, et al; J. Cryst. Growth 107 (1991) pp. 537-542. |
"Strained InAs single quantum wells embedded in Ga0.47In0.53As matrix"; Tournie, et al; Appl. Phys. Lett. 61(7), 17 Aug. 1992, pp. 846-848. |
Divisions (1)
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Number |
Date |
Country |
Parent |
137765 |
Oct 1993 |
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