Balasinski et al, “A Novel Approach To Simulate The Effect of Optical Proximity on Mosfet Parametric Yield,” Dec. 1999, pp. 37.6-37.6.4.* |
Balasinski et al, “Comparison of Mask Writing Tools and Mask Simulations for 0.16 UM Devices,” IEEE, Dec. 1999, pp. 372-377.* |
Chang, K. et al., “Accurate Modeling of Deep submicron Interconnect Technology”, TMA Times, vol. IX, No. 3 (1997). |
Brunner, T. et al., “Approximate models for resist processing effects”, SPIE, vol. 2726, p. 128 (1996). |
Henke, W. et al., “A study of reticle defects imaged into three-dimensional developed profiles of positive photoresist using the Solid lithography simulator”, Microelectronic Eng., vol. 14, pp. 283-297 (1991). |
Karklin, L., “A comprehensive simulation study of the photomask defects printability”, SPIE, vol. 2621, pp. 490-504 (1995). |
Ham, Y.M. et al., “Dependence of Defects in Optical Lithography”, Jpn. J. Appl. Phys., vol. 31, pp. 4137-4142, Dec. 1992. |
Wiley, J. et al., “The Effect of Off-Axis Illumination on the Printability of Opaque and Transparent Reticle Defects”, SPIE, vol. 2512, pp. 432-440 (1995). |
Nistler, J. et al., “Phase Shift Mask Defect Printability Analysis”, proceedings of the '93 Conference on Microlithography, OCG Microelectronic Materials, Inc., (1993) pp. 11-28. |
Ohtsuka, H. et al., “Phase Defect Repair Method for Alternating Phase Shift Masks Conjugate Twin-Shifter Method”, Jpn. J. Appl. Phys., vol. 31, pp. 4143-4149, Dec. 1992. |
Watanabe, H. et al., “Detection and Printability of Shifter Defects in Phase-Shifting Masks II. Defocus Characteristics”, Jpn. J. Appl. Phys., vol. 31, pp. 4155-4160, Dec. 1992. |
Wiley, J. et al., “Phase Shift Mask Pattern Accuracy Requirements and Inspection Technology”, SPIE, vol. 1464, pp. 346-355 (1991). |
Wiley, J. et al., “Device Yield and Reliability by Specification of Mask Defects”, Solid State Technology, vol. 36, No. 7, pp. 65-6, 70, 72, 74, 77, Jul. 1993. |
Pati, Y.C. et al., “Exploiting Structure in Fast Aerial Image Computation for Integrated Circuit Patterns”, IEEE Transactions on Semiconductor Manufacturing, vol. 10, No. 1, Feb. 1997, pp. 62-74. |
Pati, Y.C. et al., “Phase-shifting masks for microlithography: automated design and mask requirements”, J. Opt. Soc. Am., vol. 11, No. 9, Sep. 1994, pp. 2438-2452. |
Ibsen, K. et al., “Clear Field Reticle Defect Disposition for Advanced Sub-Half Micron Lithography”, Proceedings of the 17th Annual Symposium on Photomask Technology and Management,SPIE, vol. 3236, pp. 124-135 (1997). |
Roman, B. et al., “Implications of Device Processings on Photomask CD Requirements”, Proceedings of the 17th Annual Symposium on Photomask Technology and Management, SPIE, vol. 3236, (1997) (Abstract only). |
Gans, F. et al., “Printability and Repair Techniques for DUV Photomasks”, Proceedings of the 17th Annual Symposium on Photomask Technology and Management,SPIE, vol. 3236, pp. 136-141 (1997). |
Morimoto, H. et al., “Next Generation Mask Strategy—Are technologies ready for mass production of 256 MDRAM?”, Proceedings of the 17th Annual Symposium on Photomask Technology and Management, SPIE, vol. 3236, pp. 188-189 (1997). |
Vacca, A. et al., “100nm defect detection using a dynamically programmable image processing algorithm”, Proceedings of the 17th Annual Symposium on Photomask Technology and Management, SPIE, vol. 3236, pp. 208-215 (1997). |
Ishiwata, N. et al., “Novel alternating phase shift mask with improved phase accuracy”, Proceedings of the 17th Annual Symposium on Photomask Technology and Management, SPIE, vol. 3236, pp. 243-249 (1997). |
Park, C. et al., “An Automatic Gate CD Control for A Full Chip Scale SRAM Device”, Proceedings of the 17th Annual Symposium on Photomask Technology and Management, SPIE, vol. 3236, pp. 350-357 (1997). |
Casey, Jr., D. et al., “Chemically Enhanced FIB Repair of Opaque Defects on Molybdenum Silicide Photomasks”, Proceedings of the 17th Annual Symposium on Photomask Technology and Management, SPIE, vol. 3236, pp. 487-497 (1997). |
Barouch, et al., “Optimask: An OPC Algorithm for Chrome and Phase-Shift Mask Design”, SPIE—The International Society for Optical Engineering, vol. 2440, pp. 191-206, Feb. 22-24, 1995. |
Nistler, et al., “Large Area Optical Design Rule Checker For Logic PSM Application”, SPIE—The International Society for Optical Engineering, vol. 2254, pp. 78-92, (1994). |
Spence, et al., “Automated Determination of CAD Layout Failures Through Focus: Experiment and Simulation”, SPIE—The International Society for Optical Engineering, vol. 2197, pp. 302-313, (1994). |
H. Jinbo et al., “0.2 um Or Less i-Line Lithography By Phase-Shifting-Mask Technology”, IEEE 1990, pp. 33.3.1-33.3.4. |
H. Jinbo, et al. “Application of Blind Method to Phase-Shifting Lithography”, IEEE 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers, pp. 112-113. |
T. Kimura et al., “Subhalf-Micron Gate Gaas Mesfet Process Using Phase-Shifting-Mask Technology”, IEEE 1991, GaAs 1C Symposium, pp. 281-284. |
H. Jinbo et al., “Improvement of Phase-Shifter Edge Line Mask Method”, Japanese Journal of Applied Physics vol. 30, No. 11B, Nov. 1991, pp. 2998-3003. |
T. Brunner “Rim Phase-Shift Mask Combined with Off-Axis Illumination: A Path to 0.5/Numerical Aperture Geometries”, Optical Engineering, Oct. 1993, vol. 32, No. 10, pp. 2337-2343. |
M. Rieger, et al. “System for Lithography Proximity Compensation”, Sep. 10, 1993. |
J. Stirniman, et al. “Wafer Proximity Correction and its Impact on Mask-Making”, Bacus News Photomask, vol. 10, Issue 1, Jan. 1994, pp. 1-12. |
M. Rieger, et al. “Using Behavior Modelling for Proximity Correction”, 1994. |
J. Stirniman, et al. “Fast Proximity Correction With Zone Sampling”, SPIE 2197 1994, pp. 294-301. |
J. Stirniman, et al. “Optimizing Proximity Correction for Wafer Fabrication Processes”, SPIE 2322 1994 pp. 239-246. |
OPC Technology & Product Description “Microunity” MicroUnity Systems Engineering, Inc. Copyright 1996. |
M. Rieger, et al. “Customizing Proximity Correction for Process-Specific Objectives” SPIE vol. 2726, 1996, pp. 1-9. |
A. Yen, et al. “Characterization and Correction of Optical Proximity Effects in Deep-Ultraviolet Lithography Using Behavior Modeling”, J. Vac. Sci Technol. B 14(6) Nov./Dec. 1996, American Vacuum Society, pp. 4175-4178. |
Precim, “Proxima Wafer Proximity Correction System”, pp. 1-2 No Date. |
Signamask Data Sheet, “Lithas: Optical Proximity Correction Software”, pp. 1-2 No Date. |
Trans Vector Technologies Inc., “Now Better Quality Photomasks”, pp. 1-4 No Date. |
M. Rieger, et al. “Mask Fabrication Rules for Proximity-Corrected Patterns”, pp. 1-10 No Date. |
Precim Company, “Proxima System”, pp. 1-2 No Date. |
J. Stirniman, et al. “Spatial Filter Models to Describe IC Lithographic Behavior” pp. 1-10 No Date. |
M. Sugawara, et al. “Defeat Printability Study of Attenuated Phase-Shifting Masks for Specifying Inspection Sensitivity”, pp. 1-16 No Date. |
Barouch, E. et al., “Optimask: An OPC Algorithm For Chrome And Phase-Shift Mask Design”, SPIE vol. 2440, pp. 192-206, Feb. 1995. |
Cobb, et al., “Fast Sparse Aerial Image Calculation For OPC”, SPIE, vol. 2621, pp. 534-544. |
Fukuda, H., “Node-Connection/Quantum Phase-Shifting Mask: Path To Below 0.3 μm Pitch, Proximity Effect Free, Random Interconnects And Memory Patterning”, J. Vac. Sci. Technol. B, vol. 17, No. 6, pp. 3291-3295, Nov./Dec. 1999. |
Kubota, H. et al., “A Fast Method Of Simulating Resist Pattern Contours Base On Mean Inhibitor Concentration”, Jpn. J. Appl. Phys., vol. 37, pp. 5815-5820 (1998). |
Vacca, A. et al., “100nm Defect Detection Using An Existing Image Acquisiton System”, SPIE, vol. 3236, pp. 208-214 (1998). |
Adam, K., et al., “Simplified Models for Edge Transitions in Rigorous Mask Modeling”, University of California Berkeley (40 pages). No Date. |
Gordon, R., et al., “Mask Topography Simulation for EUV Lithography”, Finle Technologies Inc. (15 pages). No Date. |
Pistor, T., “Rigorous 3D Simulation of Phase Defects in Alternating Phase-Shifting Masks”, Panoramic Technology Inc. (13 pages). No Date. |
Semmier, A., et al., “Application of 3D EMF Simulation for Development and Optimization of Alternating Phase Shifting Masks”, Infineon Technologies AG (12 pages). No Date. |
Wong, A., et al., “Polarization Effects in Mask Transmission”, University of California Berkeley (8 pages). No Date. |
Neureuther, A., et al., “Modeling Defect-Feature Interactions in the Presence of Aberrations”, University of California Berkeley (10 pages). No Date. |
Mathur, B.P., et al., “Quantitative Evaluation of Shape of Image on Photoresist of Square Apertures”, IEEE, Transactions On Electron Devices, vol. 35, No. 3, pp. 294-297, Mar. 1988. |
Crisalle, O., et al., “A Comparison of the Optical Projection Lithography Simulators in Sample and Prolith”, IEEE, Transactions On Semiconductor Manufacturing, vol. 5, No. 1, pp. 14-26, Feb. 1992. |
Qian, Q.D., et al., “A New Scalar Planewave Model for High NA Lithography Simulations”, IEEE, pp. 45-48 (1994). |
Fukuda, H. et al., “Determination Of High-Order Lens Aberration Using Phase/Amplitude Linear Algebra”, J. Vac. Sci. Technol. B, vol. 17, No. 6, pp. 3318-3321, Nov./Dec. 1999. |