The present invention relates to a differential-pressure sensor system and a corresponding production method.
Although applicable to any semiconductor chip system, the present invention as well as the problem underlying it are explained with respect to a micromechanical silicon semiconductor chip system having an integrated differential-pressure sensor.
German Patent Application No. DE 10 2004 051 468 A1 describes a method for mounting semiconductor chips, which has the following steps:
German Patent Application No. DE 10 2005 038 443 A1 describes a sensor system having a substrate and having a housing, the housing generally completely surrounding the substrate in a first substrate region, and the housing being at least partially provided with an opening in a second substrate region. The second substrate region is provided in a manner projecting out of the housing in the region of the opening. Furthermore, it may be gathered from this printed publication that the housing at least partially surrounds the second substrate region at least with clearance in a main plane of the substrate, so that a through-hole is formed in this manner, into which the second substrate region projects on one side.
In general, today micromechanical silicon pressure sensors having piezoresistive transformer elements are widespread. To produce a diaphragm, a cavity is introduced into a silicon chip by anisotropic etching, for example. In this context, a glass plate that is bonded in an anodic manner to the back side of the wafer serves to reduce the mechanical stress that is generated by solder or adhesive agents. The sensor chip is normally soldered into a metallic housing, e.g., TO8, and welded to a metal cap in a hermetically sealed manner. An alternative mounting method is to adhere the sensor chip onto a ceramic or into a premolded housing, and to passivate it using a gel to protect against environmental influences.
The production of an absolute pressure sensor chip is described in International Patent Application WO 02/02458 A1, the diaphragm being produced through porous silicon that is produced in the region of the diaphragm before an epitaxy layer and that rearranges during the epitaxy such that a cavity forms.
In accordance with the present invention, a differential-pressure sensor chip is provided having a projecting sensor region in open-cavity mold technology, and a second pressure connection for applying the reference pressure in the housing. The differential-pressure sensor system according to the present invention is resistant to media and is also suitable for particle-containing and etching media.
In contrast to the conventional design approaches, the differential-pressure sensor system according to the present invention and the corresponding production method may have the advantage that they allow for a construction that is simple, cost-effective, and insensitive to environmental influence. There are advantages with regard to low packaging costs during molding-in. Compared to an absolute pressure sensor without a second pressure connection, except for an additional silicon separation step to open a second pressure access opening, no further process steps are required.
The etching step for opening the second pressure access opening does not have to be performed through the entire wafer, but rather only through the thickness of the diaphragm. This saves process time. The potential clogging of the connection channel from the diaphragm cavity to the second pressure access opening by particles in the medium may be prevented by a large-area, fine-grid filter sieve or mesh.
The example construction according to the present invention is resistant to media, since the electric connections (typically made of aluminum) are protected by molding substances. Only surfaces made of silicon or silicon nitride (passivation) may be reached by the pressure medium. Silicon or silicon nitride, and thus the entire sensor, is particularly resistant to media. A gel for passivating the electrical chip connections (bond pads) is not necessary. One particular advantage is therefore a very low cross sensitivity to acceleration, and usability at higher pressures. In sensors protected by gel, the structure of the gel would be destroyed in the event of sudden drops in pressure, by small gas bubbles that form in the gel in the process (similar to aeroembolism). A monocrystalline silicon diaphragm may be produced. One particular advantage of it is the high mechanical strength or the high K factor of piezo-resistors that are doped in it. Existing processes for producing pressure sensors may be retained, for the most part. The projecting chip allows for a good stress buffer from the sensor diaphragm. Mechanical stress is broken down through the spatial separation of the mounting region from the diaphragm region. The electric initial testing in the wafer composite is possible, and a band adjustment is possible after the mounting. The geometry of the diaphragm region may be configured as desired, but preferably has a square, rectangular or round design.
Exemplary embodiments of the present invention are shown in the figures and are explained in greater detail below.
a, b show schematic sectional views of a part of the process for producing a micromechanical silicon semiconductor chip system having an integrated differential-pressure sensor, which may be used in the differential-pressure sensor system according to the present invention.
a, b show schematic sectional views of a first specific embodiment of the differential-pressure sensor system according to the present invention.
In the figures, like reference numerals designate like or functionally equivalent components.
a, b show schematic sectional views of a part of the process for producing a micromechanical silicon semiconductor chip system having an integrated differential-pressure sensor, which may be used in the differential-pressure sensor system according to the present invention.
In
A diaphragm 5, under which a diaphragm cavity 2, a connection channel 3, and a reference pressure access space 4 have been produced, are produced in accordance with a method described in International Patent Application No. WO 02/02458 A1, for example. Piezoresistive resistors 6 are provided on the upper side of diaphragm 5, whose electrical behavior is used to detect the applied measuring pressure when diaphragm 5 is distorted, a corresponding counterpressure being produced by the reference pressure. Reference numeral 8 labels an optional integrated evaluation circuit. A chip passivation 7, of silicon nitride, for example, is provided above the diaphragm.
To produce a second pressure access opening, a photo mask 9 having mask openings 9a is provided above chip passivation layer 7. Subsequently, a trench-etching step is performed to form one (reference numeral 10a in
The functioning method of such a differential-pressure sensor chip 1 thus comprises applying a pressure to be measured in the region of diaphragm 5 having piezoresistive resistors 6, and at the same time applying a reference pressure in the region of the opening(s) 10a and 10, respectively. To prevent stress from the connection channel from possibly interfering with piezoresistive elements 6, it is advantageous to provide connection channel 3 at a suitable distance from piezoresistive elements 6 (cf.
a, b show schematic sectional views of a first specific embodiment of the differential-pressure sensor system according to the present invention.
In accordance with
As shown in
In the second specific embodiment in accordance with
Evaluation chip 1a is cemented onto the lead frame along with differential-pressure sensor chip 1; however, in contrast to differential-pressure sensor chip 1, it is completely surrounded by the molding substance of housing 13.
In the third specific embodiment according to
In the fourth specific embodiment according to
Second pressure connection plate 42 has an integrated pressure connection piece 37 in accordance with the pressure outlet of through hole 17. Clearly, the pressure connection of pressure P1 to be measured may also take place at the underside. A possible screw fitting or clamping for the sealing connection of pressure connection plates 40, 42 to housing 13 are not shown.
In the fifth specific embodiment shown in
Although the present invention has been explained above with reference to preferred exemplary embodiments, it is not restricted to them, but may be implemented in other ways as well.
Only piezoresistive sensor structures were considered in the above examples. However, the present invention is also suitable for capacitive or other sensor structures, in which differential-pressure measuring diaphragms are used.
Number | Date | Country | Kind |
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102007022852.1 | May 2007 | DE | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/EP2008/053318 | 3/19/2008 | WO | 00 | 10/30/2009 |