Patent Grant
12089457
This application is a U.S. National Phase of International Patent Application No. PCT/JP2020/002914 filed on Jan. 28, 2020, which claims priority benefit of Japanese Patent Application No. JP 2019-016645 filed in the Japan Patent Office on Feb. 1, 2019. Each of the above-referenced applications is hereby incorporated herein by reference in its entirety.
The present disclosure relates to a display device and a method for manufacturing the display device, and an electronic device.
A display device that includes a light-emitting part using organic electroluminescence and pixels including the light-emitting part is well-known. The display device has been attracting attention as a display device that is driven by a low-voltage direct current to be able to emit light with high luminance.
A display device that uses organic electroluminescence is of spontaneous light emission type, and further has sufficient responsiveness to a high-definition high-speed video signal. In a display device that is attached to eyewear such as glasses or goggles, it is also requested, for example, that a size of a pixel be about several μm to 10 μm.
Normally, the light-emitting part that uses organic electroluminescence includes an organic layer that includes a light-emitting layer, and a first electrode and a second electrode that are disposed to sandwich the organic layer. The pixel includes the light-emitting part, and a driving circuit that drives the light-emitting part and includes a transistor and the like. Then, a display region in which pixels are arranged in a matrix shape is scanned by a predetermined peripheral circuit, and therefore an image is displayed. Patent Document 1 discloses a structure in which a light-emitting part that uses organic electroluminescence, its driving circuit, and a peripheral circuit have been formed on the same substrate.
Patent Document 1: Japanese Patent Application Laid-Open No. 2014-89803
A required characteristic of a transistor that drives a light-emitting part that uses organic electroluminescence does not always match a required characteristic of a transistor that is used in a peripheral circuit. If these transistors are formed on the same substrate in a common semiconductor element manufacturing process, processes become very complicated, and this results in a decrease in a yield. Furthermore, it is also difficult to cope with a reduction in size such as a reduction in a size of a substrate.
Accordingly, it is an object of the present disclosure to provide a display device that is capable of causing a transistor used in the display device to have a suitable characteristic and is also capable of achieving a reduction in size, without no complicated semiconductor element manufacturing process and a method for manufacturing the display device, and an electronic device that includes the display device.
A display device according to the present disclosure for achieving the object described above is a display device including:
A method for manufacturing a display device according to the present disclosure for achieving the object described above is a method for manufacturing a display device including:
An electronic device according to the present disclosure for achieving the object described above is an electronic device including a display device that includes:
The present disclosure is described below on the basis of embodiments with reference to the drawings. The present disclosure is not limited to the embodiments, and various numerical values or materials in the embodiments are examples. In the description below, it is assumed that the same element or elements that have the same function are denoted by the same reference sign, and a duplicate description is omitted. Note that description will be provided in the order described below.
A display device according to the present disclosure, a display device obtained by using a method for manufacturing a display device according to the present disclosure, and a display device used in an electronic device according to the present disclosure (hereinafter, in some cases, these are simply referred to as a display device according to the present disclosure) includes, as described above:
The display device according to the present disclosure can have a configuration in which on the first substrate,
A display device according to the present disclosure that includes the preferred configuration described above can have a configuration in which
In this case, a configuration in which the insulating structure is formed by using an insulating material that is included in the insulating film can be employed. Alternatively, 1. a configuration in which a protective film is formed on the second electrode, and the insulating structure is formed by using an insulating material that is included in the protective film; 1. a configuration in which a color filter is formed on the second electrode, and the insulating structure is formed by using an insulating material that is included in the color filter; or 3. a configuration in which a microlens is formed on the second electrode, and the insulating structure is formed by using an insulating material that is included in the microlens can also be employed.
Alternatively, a display device according to the present disclosure that includes the preferred configuration described above can have a configuration in which
In this case, a configuration in which the penetration surface of the semiconductor material layer is covered with an insulating material that is included in the insulating film. Alternatively, 1. a configuration in which a protective film is formed on the second electrode, and the penetration surface of the semiconductor material layer is covered with an insulating material that is included in the protective film; 1. a configuration in which a color filter is formed on the second electrode, and the penetration surface of the semiconductor material layer is covered with an insulating material that is included in the color filter; or 3. a configuration in which a microlens is formed on the second electrode, and the penetration surface of the semiconductor material layer is covered with an insulating material that is included in the microlens can also be employed.
Alternatively, a display device according to the present disclosure that includes the preferred configuration described above can also have a configuration in which an opening having a region that is wider than an exposed region of the pad electrode is provided in the semiconductor material layer.
A display device according to the present disclosure that includes various preferred configurations described above can have a configuration in which
As described above, a method for manufacturing a display device according to the present disclosure includes:
The method for manufacturing the display device according to the present disclosure that has been described above can have a configuration including:
In this case, a configuration can be employed in which between the first process and the second process,
In this case, a configuration in which the insulating structure is formed by using an insulating material that is included in the insulating film can be employed. Alternatively,
Alternatively, a configuration can be employed in which between the first process and the second process,
In this case, a configuration in which the insulating material layer is formed by using an insulating material that is included in the insulating film (in other words, a configuration in which a section of the semiconductor material layer is covered with the insulating material that is included in the insulating film) can be employed. Alternatively,
Alternatively, a configuration can also be employed in which between the first process and the second process,
In a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure (hereinafter, these are simply referred to as the present disclosure in some cases), a substrate in which a semiconductor material layer has been formed on a substrate of glass or the like, or a substrate that includes a semiconductor material such as silicon can be used as a first substrate or a second substrate. A circuit element such as a transistor can be configured, for example, by machining a semiconductor material layer or appropriately forming a transistor or the like in a well that is provided in a substrate that includes a semiconductor material.
As described above, a light-emitting part includes a first electrode, an organic layer, and a second electrode. For example, the first electrode is an anode electrode that is used to inject a hole into the organic layer, and the second electrode is a cathode electrode that is used to inject electrons into the organic layer. In the case of a top emission type in which light generated in the organic layer is emitted toward the cathode electrode, the first electrode has light reflection property, and the second electrode has light transmission property.
It is preferable that an electrode having light reflection property have a high reflectance for a light-emitting wavelength of the organic layer, and the electrode can be formed by using, for example, a metal material including a metal simple substance, such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti), or tantalum (Ta), or an alloy. Note that the electrode may have a single-layer structure, or may have a layered structure.
Furthermore, an electrode having light transmission property can be configured by using a transparent conductive material, such as indium tin oxide (ITO, including Sn-doped In2O3, crystalline ITO, and amorphous ITO) or indium zinc oxide (IZO). Note that, in some cases, a metal film that has been made thinner to have light transmission property can also be used.
Various wiring lines or the like that are used in the display device can be formed, for example, by combining a well-known film forming method, for example, physical vapor deposition (PVD) such as vacuum deposition or sputtering, various types of chemical vapor deposition (CVD), or the like with a well-known patterning method, for example, etching, lift-off, or the like.
An insulating layer, an insulating film, or the like that is used in the display device can be formed by using a well-known insulating material, for example, an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride, or an organic material such as polyimide.
The display device may be configured to display a monochromatic image, or may be configured to display a color image. As a value of a resolution of the display device, some examples of a resolution for an image, such as U-XGA (1600, 1200), HD-TV (1920, 1080), Q-XGA (2048, 1536), (3840, 2160), or (7680, 4320), can be provided. However, these values are not restrictive.
The organic layer can have, for example, a structure in which a hole injection layer, a hole transportation layer, a light-emitting layer, an electron transportation layer, and an electron injection layer have been sequentially stacked. A hole transportation material, a hole transportation material, an electron transportation material, and an organic light-emitting material that are included in the organic layer are not particularly limited, and a well-known material can be used.
In a case where the display device is configured to conduct a color display, a configuration in which a white-light emitting organic layer and a color filter have been combined can be employed. In this configuration, an organic layer including the hole transportation layer, the light-emitting layer, the electron transportation layer, or the like can be made common in a plurality of pixels. Accordingly, the organic layer does not need to be separately coated for each of the pixels. Alternatively, a configuration in which a red-light emitting organic layer, a green-light emitting organic layer, or a blue-light emitting organic layer is separately coated according to pixels can also be employed. In this configuration, as a pixel pitch decreases, separate coating becomes more difficult. Accordingly, in a display device having a pixel pitch of a μm unit, it is preferable that the configuration in which the white-light emitting organic layer and the color filter have been combined be employed.
An organic layer that emits white light can be formed to have a layered structure that includes a red-light emitting layer, a green-light emitting layer, and a blue-light emitting layer. Alternatively, the organic layer can be formed to have a layered structure that includes a blue-light emitting layer that emits blue light and a yellow-light emitting layer that emits yellow light, or a layered structure that includes the blue-light emitting layer that emits blue light and an orange-light emitting layer that emits orange light. In these layered structures, white light as a whole is emitted.
A light-emitting material that is included in the light-emitting layer may be fluorescent, or may be phosphorescent. A configuration of the light-emitting material is not particularly limited, and a well-known material, such as a mixture of 4,4-bis(2,2-diphenylvinyn)biphenyl (DPVBi) and 2,6-bis[(4′-methoxydiphenylamino)styryl]-1,5-dicyanonaphthalene (BSN) (emission of red light), a mixture of DPVBi and 4,4′-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi) (emission of blue light), or a mixture of DPVBi and coumarin 6 (emission of green light), can be used. Furthermore, a light-emitting layer of each color can be configured by appropriately adding a transporting material of a carrier such as an electron or a hole, or the like to the light-emitting material described above.
A hole transporting material is a material that is also used in a hole injection layer that helps injection of a hole into a light-emitting layer, and a well-known material, such as copper phthalocyanine, hexa-aza-triphenylene (HAT), or N,N′-di(1-naphthyl)-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine [α-NPD, can be provided as an example. Furthermore, an electron transporting material is a material that is also used in an electron injection layer that helps injection of an electron into a light-emitting layer, and a well-known material, such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), or metal complex or nitrogen-containing heterocyclic derivative of 8-hydroxyquinoline or its derivative (for example, tris(8-quinolinol)aluminum complex, benzimidazole derivative, phenanthroline derivative, or imidazopyridine derivative), can be provided as an example. Examples of a both charge transporting material include a material such as aminostyryl compound, and a material obtained by performing co-deposition on the hole transporting material and the electron transporting material.
A predetermined circuit, such as a source driver, that drives the display device can be configured by using a well-known circuit element. For example, a vertical scanner, a power source, or the like that is illustrated in
Furthermore, as an example of an electronic device that includes the display device according to the present disclosure, a forward-viewing-type or projection-type display device, and a variety of electronic devices having an image display function can be provided.
Various conditions herein are not only satisfied in a case where the conditions are strictly established, but are also satisfied in a case where the conditions are substantially established. The presence of a variety of variations generated in designing or manufacturing is allowable. Furthermore, respective drawings used in the description below are schematic, and do not illustrate actual dimensions or a ratio of the actual dimensions.
A first embodiment relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
A display device 1 illustrated in
The display device 1 includes a scanning line WS and a feeder line PS1 that are provided for each pixel row that is disposed along a row direction (an X-direction in
The pixels 70 arranged in the two-dimensional matrix shape are included in a display region (a pixel array) 80 that displays an image. The number of rows of the pixels 70 in the display region 80 is M, and the number of pixels 70 in each row is N.
The respective numbers of scanning lines WS and feeder lines PS1 are M. Pixels 70 in an m-th row (where m=1, 2, . . . , M) are connected to an m-th scanning line WSm and an m-th feeder line PS1m, and are included in a single pixel row. Furthermore, the number of data lines DTL is N. Pixels 70 in an n-th column (where n=1, 2, . . . , N) are connected to an n-th data line DTLn.
Note that the display device 1 includes a common feeder line that is commonly connected to all of the pixels 70, but this is omitted in
The display device 1 further includes a variety of circuits, such as a source driver 110, a vertical scanner 120, or a power source 130, that drive the display region 80. Note that, in the example illustrated in
The display region 80, the source driver 110, the vertical scanner 120, and the power source 130 are integrally configured by the first substrate 10 and the second substrate 20 that have been stuck together. Stated another way, the display device 1 is a driver-circuit integrated display device.
A signal LDSig that indicates grayscale according to an image to be displayed is input to the source driver 110 from, for example, a not-illustrated device. The signal LDSig is, for example, a low-voltage digital signal. The source driver 110 is used to generate an analog signal according to a grayscale value of a video signal LDSig and supply the analog signal as a video signal to the data line DTL. An analog signal to be generated is a signal that has a maximum value that is roughly equal to a value of a power source voltage supplied to the source driver 110, and has an amplitude of about several volts.
The vertical scanner 120 supplies a scanning signal to the scanning line WS. This scanning signal causes pixels 70 to be line-sequentially scanned, for example, in row units. It is described that the power source 130 continuously supplies a predetermined power source voltage VCC (for example, about 10 volts) to the feeder line PS1 regardless of scanning of the scanning line WS. Note that, in some cases, a configuration in which a voltage to be supplied to the feeder line PS1 is switched according to scanning of the scanning line WS may be employed.
The display device 1 is, for example, a display device that conducts a color display, and a group of three pixels 70 that are disposed in the row direction is included in a single color pixel. Accordingly, if it is assumed that N′=N/3, N′ color pixels in the row direction and M color pixels in the column direction, N′×M color pixels in total, are arranged in the display region 80.
As described above, a scanning signal of the vertical scanner 120 causes pixels 70 to be line-sequentially scanned in row units. Hereinafter, a pixel 70 located in an m-th row and an n-th column is referred to as an (n, m)th pixel 70.
In the display device 1, N pixels 70 arranged in the m-th row are simultaneously driven. In other words, in N pixels 70 arranged along the row direction, a timing of emitting light or not emitting light is controlled in units of a row that the N pixels 70 belong to. If a display frame rate of the display device 1 is indicated as FR (times/second), a scanning period per row (what is called a horizontal scanning period) at a time when the display device 1 is line-sequentially scanned in row units is less than (1/FR)×(1/M) seconds.
In the display device 1, a signal such as the signal LDSig described above that indicates grayscale, or a voltage is supplied from the outside. Therefore, a pad region for connection that is used to supply a signal or a voltage is provided.
A pad region 90 is disposed, for example, along one end of the display region 80, in order not to hinder displaying an image. In the pad region 90, a plurality of pad electrodes 26 for connection is disposed to be spaced apart from each other, for example, at each predetermined interval.
As illustrated in
Basically, a signal such as a signal LDSig that indicates grayscale, or a voltage needs to be supplied to a predetermined circuit in the second substrate 20. Therefore, basically, it is preferable that the pad electrode 26 be provided on a side of the second substrate 20. A pad opening is provided to face the pad electrode 26 from a side of the first substrate 10 in such a way that the pad electrode 26 provided in the second substrate 20 is exposed on a bottom surface, but this is omitted in
An outline of the display device 1 has been described above. Next, details of the pixel 70 are described.
First, a circuit configuration of the pixel 70 is described.
As illustrated in
The driving circuit 71 further includes a capacity part CS. The capacity part CS is used to hold a voltage (what is called a gate-source voltage) of a gate electrode relative to a source region in the driving transistor TRD. At the time of light emission of the pixel 70, one source/drain region (a side that is connected to a feeder line PS1 in
One electrode and another electrode that are included in the capacity part CS are respectively connected to the one source/drain region and the gate electrode of the driving transistor TRD. The other source/drain region of the driving transistor TRD is connected to an anode electrode of the light-emitting part 50.
The light-emitting part 50 is a current driven type light-emitting part that has a light emission luminance that changes according to a value of a current that flows. Specifically, the light-emitting part 50 includes an organic electroluminescence light-emitting part. The light-emitting part 50 has a well-known configuration or structure that includes a first electrode (an anode electrode), a hole transportation layer, a light-emitting layer, an electron transportation layer, a second electrode (a cathode electrode), and the like.
Another end (specifically, the second electrode) of the light-emitting part 50 is connected to a common feeder line. A predetermined voltage VCATH (for example, a ground potential) is supplied to the common feeder line. Note that a capacity of the light-emitting part 50 is denoted by the reference sign CEL. In a case where the capacity CEL of the light-emitting part 50 is small and this hinders driving of the pixel 70, and other cases, it is sufficient if an auxiliary capacity that is connected in parallel to the light-emitting part 50 is provided, as needed.
The writing transistor TRW includes a gate electrode that is connected to a scanning line WS, one source/drain region that is connected to a data line DTL, and another source/drain region that is connected to the gate electrode of the driving transistor TRD. As a result, a signal voltage from the data line DTL is written to the capacity part CS via the writing transistor TRW.
As described above, the capacity part CS is connected between the one source/drain region and the gate electrode of the driving transistor TRD. A power source voltage VCC is applied to the one source/drain region of the driving transistor TRD from the power source 130 via a feeder line PS1m. If a video signal voltage VSig from the data line DTL is written to the capacity part CS via the writing transistor TRW, the capacity part CS holds a voltage such as (VCC−VSig) as a gate-source voltage of the driving transistor TRD. A drain current Ids expressed by Formula (1) described below flows through the driving transistor TRD, and the light-emitting part 50 emits light at a luminance according to a current value.
Ids=k·μ·((VCC−VSig)−Vth)2 (1)
Note that the configuration described above of the driving circuit 71 is only an example. In practice, the driving circuit can have a variety of configurations.
The circuit configuration of the pixel 70 has been described above. Next, a stereoscopic disposition relationship among various components that are included in the display device 1 is described.
A first connection electrode 15 is provided on a joint surface JS of the first substrate 10, and a second connection electrode 25 is provided on a joint surface JS of the second substrate 20. Then, the first connection electrode 15 and the second connection electrode 25 are metal-jointed on the joint surfaces JS.
The second substrate 20 includes a semiconductor material layer 21, an interlayer insulating layer 23, a pad electrode 26, and the like. A transistor that is included in a predetermined circuit, such as the source driver 110, the vertical scanner 120, or the power source 130, has been formed on the semiconductor material layer 21. The reference sign 24 denotes a variety of wiring layers, and the reference sign 22 denotes a gate electrode or the like of a transistor that is included in a predetermined circuit. Note that a wiring layer 24 or an electrode 22 is schematically illustrated. Furthermore, in practice, the interlayer insulating layer 23 includes a plurality of layers. For convenience of illustration, in the drawing, the interlayer insulating layer 23 is illustrated as a single layer.
The first substrate 10 includes a semiconductor material layer 11, an interlayer insulating layer 13, and the like. Various transistors that are included in the driving circuit 71 described above have been formed in the semiconductor material layer 11. The reference sign 14 denotes a variety of wiring layers, and the reference sign 12 denotes a gate electrode or the like of a transistor that is included in the driving circuit 71. Note that a wiring layer 14 or an electrode 12 is schematically illustrated. Furthermore, in practice, the interlayer insulating layer 13 includes a plurality of layers. For convenience of illustration, in the drawing, the interlayer insulating layer 13 is illustrated as a single layer.
First, a configuration of a portion that includes the pixel 70 in the display region 80 is described. The pixel 70 has been formed on the first substrate 10. On the first substrate 10, an insulating film 30, a first electrode 32 that has been formed on the insulating film 30 and is disposed in a matrix shape, an organic layer 33 that has been formed over an entire surface including an upper side of the first electrode 32, and a second electrode 34 that has been formed over an entire surface including an upper side of the organic layer 33 have been formed to be stacked. Then, the light-emitting part 50 includes the first electrode 32, the organic layer 33, and the second electrode 34. The first electrode 32 is connected to a driving circuit provided in the first substrate 10 by a connecting plug 31. On the second electrode 34, a protective film 40, a color filter 41, and a microlens 42 are disposed. Moreover, a counter substrate 44 that includes, for example, glass or the like is disposed via sealing resin 43.
Next, a configuration of a portion of the pad region 90 is described. The first substrate 10 and the second substrate 20 have been stuck together in such a way that respective joint surfaces JS face each other. Then, the pad electrode 26 has been provided on a side of the joint surfaces JS, and has been formed, for example, in the interlayer insulating layer 23 of the second substrate 20. Furthermore, on the first substrate 10, the insulating film 30, the protective film 40, and an insulating material layer that is used to form the microlens (for convenience, the reference sign 42 is used with no change, and the similar is applied to other embodiments) have been stacked. A pad opening PDOP has been provided to face the pad electrode 26 from a side of the first substrate 10 in such a way that the pad electrode 26 provided in the second substrate 20 is exposed on a bottom surface.
The pad opening PDOP has been provided to penetrate the semiconductor material layer 11 of the first substrate 10, and the semiconductor material layer 11 that is located around the pad opening PDOP is sectioned by an insulating structure 30A that has been provided along a circumference of each of the pad openings PDOP to penetrate the semiconductor material layer 11. The insulating structure 30A has been formed by using an insulating material that is included in the insulating film 30, as described in detail with reference to
As illustrated in
Furthermore, characteristics of the organic layer 33 deteriorate due to moisture infiltration or moisture absorption. The insulating structure 30A can prevent moisture infiltration or moisture absorption that can be generated via the semiconductor material layer 11, and therefore a deterioration of the organic layer 33 can be prevented.
The stereoscopic disposition relationship among various components that are included in the display device 1 has been described above. Next, a method for manufacturing the display device 1 is described with reference to
A method for manufacturing the display device 1 includes:
Then, in the method for manufacturing the display device 1, between the first process and the second process,
The method for manufacturing the display device 1 is described in detail below.
[Process-100]
An element required to drive the light-emitting part 50 is formed on the first substrate 10. For example, a transistor or the like is appropriately formed in a well that has been provided in the semiconductor material layer 11 that includes a semiconductor material such as silicon. The semiconductor material layer 11 can be formed by using, for example, polysilicon, and a channel region or a source/drain region can be formed by performing ion implantation or the like. Thereafter, a variety of electrodes 12 or wiring layers 14 are appropriately formed in the interlayer insulating layer 13 (see
A wiring line that is included in the electrode 12 or the wiring layer 14 can be formed by using a material such as aluminum (Al), and a connecting plug (a via) that connects wiring lines can be formed by using, for example, tungsten (W) or the like. Furthermore, in some cases, the wiring line or the connecting plug can also be formed by using copper (Cu). The similar is applied to the electrode 22, the wiring layer 24, or the like in the second substrate 20.
Next, the first connection electrode 15 that is used for connection to the second substrate 20 is formed (see
[Process-110]
A predetermined circuit, such as the source driver 110, the vertical scanner 120, or the power source 130, is formed in the second substrate 20. It is requested that an operation state of each of the circuits be reflected, and for example, transistors having threshold characteristics different from each other be appropriately formed. Similarly to the first substrate 10, for example, a transistor or the like is appropriately formed in a well that has been provided in the semiconductor material layer 21 that includes a semiconductor material such as silicon. Thereafter, a variety of electrodes 22 or wiring layers 24 are appropriately formed in the interlayer insulating layer 23. Furthermore, the pad electrode 26 that is connected to a predetermined circuit is also formed. (See
Next, the second connection electrode 25 that is used for connection to the first substrate 10 is formed (see
[Process-120]
The first substrate 10 and the second substrate 20 are joined. For example, activating using plasma treatment is performed in a state where the first substrate 10 and the second substrate 20 face each other, and therefore surfaces are hydrophilized (see
[Process-130]
Next, an insulating structure is formed in a portion that corresponds to the pad region 90. First, a portion that surrounds a portion of the pad opening PDOP of the semiconductor material layer 11 is removed, and an annular opening OP is formed (see
Thereafter, the insulating film 30 is formed over an entire surface including an upper side of the semiconductor material layer 11. By doing this, a portion of the annular opening OP is also filled with an insulating material that is included in the insulating film 30, and the insulating structure 30A is formed (see
[Process-140]
Next, the light-emitting part 50 is formed on the first substrate 10.
The connecting plug (the via) 31 that is used to connect the first electrode 32 to a transistor or the like that has been formed in the semiconductor material layer 11 is formed. First, an opening OP is formed in a portion in which the connecting plug 31 will be formed in the first substrate 10. The opening OP can be formed in a portion of the insulating film 30 and the semiconductor material layer 11, by using a method, such as forming a mask by using a lithographic technique, and then performing dry etching, for example. Here, it has been assumed that a diameter of the opening is about 500 nanometers. Thereafter, the insulating film 30 is filled back by about 100 nanometers. Then, for example, dry etching is performed, and a wiring line is exposed in a bottom of the opening OP (see
Next, after a conductive material layer has been formed over an entire surface including the opening OP, smoothing is performed by using the CMP technique or the like, and therefore the connecting plug 31 can be formed (see
Next, after a conductive material layer that is included in the first electrode 32 has been formed over an entire surface, a first electrode 32 that corresponds to each of the pixels 70 is formed, by using a method such as forming a mask by using the lithographic technique, and then performing dry etching. In the case of a top emission type, it is desirable that the first electrode 32 has a function of an anode electrode and a function of a reflective film, and include a material having a high reflectance and a high hole injection property. The first electrode 32 can be formed by using, for example, a conductive material layer that has been set to have a film thickness of 10 to 1000 nanometers, and includes chromium (Cr) or the like.
Next, in a portion that corresponds to the display region 80, the organic layer 33 including a light-emitting layer is formed over an entire surface including an upper side of the first electrode 32, and then the second electrode 34 is formed on the organic layer 33. Thereafter, in portions that correspond to the display region 80 and the pad region 90, the protective film 40 is formed over an entire surface (see
The organic layer 33 can be formed, for example, by sequentially stacking a hole injection layer, a hole transportation layer, a light-emitting layer, an electron transportation layer, and an electron injection layer from a side of the first electrode 32.
The light-emitting layer of the organic layer 33 can be formed, for example, as a light-emitting layer for white light emission. In this case, a combination with a color filter enables a color display to be conducted. A white-light emitting layer can be formed, for example, by sequentially stacking a red-light emitting layer, a light emission separating layer, a blue-light emitting layer, and a green-light emitting layer. Alternatively, the white-light emitting layer can also be formed to have a layered structure that includes the blue-light emitting layer and a yellow-light emitting layer or a layered structure that includes the blue-light emitting layer and an orange-light emitting layer. In these layered structures, white light as a whole is emitted. A material that is included in the organic layer 33 is not particularly limited, and the organic layer 33 can be configured by using a well-known material.
[Process-150]
Next, in a portion that corresponds to the display region 80, the color filter 41 is formed on the protective film 40, and then the microlens 42 is formed over an entire surface. Thereafter, in the portion that corresponds to the display region 80, the counter substrate 44 is stuck via the sealing resin 43 (see
Next, a portion illustrated with a broken line in
Note that description has been provided under the assumption that the pad electrode 26 is provided on a side of the second substrate 20, but the pad electrode 26 may be provided on a side of the first substrate 10. For example, the pad electrode 26 may be formed in the interlayer insulating layer 13 of the first substrate 10.
A second embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
Similarly to the first embodiment, in the display device 2 according to the second embodiment, an insulating structure 30B is formed by using an insulating material that is included in the insulating film 30. However, a difference is that the insulating structure 30B is formed by using a process of forming the connecting plug 31. Therefore, some processes can be omitted in comparison with the first embodiment.
A method for manufacturing the display device 2 is described in detail below.
[Process-200]
First, [Process-100] to [Process-120] that have been described in the first embodiment are performed (see
[Process-210]
Next, the connecting plug 31 is formed, and the insulating structure 30B is also formed. First, an opening OP is formed in a portion in which the connecting plug 31 will be formed and a portion in which the insulating structure 30B will be formed in the first substrate 10 (the drawing is omitted). Thereafter, after the insulating film 30 has been filled back by about 100 nanometers, for example, dry etching is performed. Then, after a conductive material layer has been formed over an entire surface including the opening, smoothing is performed by using the CMP technique or the like. Therefore, the connecting plug 31 can be formed, and in addition, the insulating structure 30B into which a plug 31A has been embedded can be formed (see
[Process-220]
Next, the display device 2 can be obtained by performing processes that are similar to processes that have been described with reference to
A third embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
In the first embodiment and the second embodiment, the insulating structures 30A and 30B have been formed by using an insulating material that is included in the insulating film 30. The third embodiment is different from this in that an insulating structure 40A is formed by using an insulating material that is included in the protective film 40 on the second electrode 34.
A method for manufacturing a display device 3 is described in detail below.
[Process-300]
First, [Process-200] described in the second embodiment is performed (see
[Process-310]
Thereafter, the light-emitting part 50 is formed on the first substrate 10. Similarly to [Process-140] described in the first embodiment, the connecting plug 31 is formed (see
[Process-320]
Next, an insulating structure is formed in a portion that corresponds to the pad region 90. First, a portion that surrounds a portion of the pad opening PDOP of the insulating film 30 and the semiconductor material layer 11 is removed, and an annular opening OP is formed (see
[Process-330]
Thereafter, in portions that correspond to the display region 80 and the pad region 90, the protective film 40 is formed over an entire surface. By doing this, the insulating structure 40A is formed by using an insulating material that is included in the protective film 40 on the second electrode 34. Next, [Process-150] described in the first embodiment is performed, a portion illustrated with a broken line in
A fourth embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
In the third embodiment, the insulating structure 40A has been formed by using an insulating material that is included in the protective film. The third embodiment is different from this in that an insulating structure 41A is formed by using an insulating material that is included in the color filter 41 on the second electrode 34.
A method for manufacturing a display device 4 is described in detail below.
[Process-400]
First, [Process-300] and [Process-310] that have been described in the third embodiment are performed (see
[Process-410]
Thereafter, in portions that correspond to the display region 80 and the pad region 90, the protective film 40 is formed over an entire surface (see
[Process-420]
Next, an insulating structure is formed in a portion that corresponds to the pad region 90. First, a portion that surrounds a portion of the pad opening PDOP of the protective film 40, the insulating film 30, and the semiconductor material layer 11 is removed, and an annular opening OP is formed (see
[Process-430]
Thereafter, in portions that correspond to the display region 80 and the pad region 90, the color filter 41 is formed over an entire surface. By doing this, the insulating structure 41A is formed by using an insulating material that is included in the color filter 41 on the second electrode 34. Next, [Process-150] described in the first embodiment is performed, a portion illustrated with a broken line in
A fifth embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
In the first embodiment to the fourth embodiment, a section of the semiconductor material layer 11 is exposed to the opening PDOP. In the fifth embodiment, the pad opening PDOP is provided to penetrate the semiconductor material layer 11 of the first substrate 10, and a penetration surface of the semiconductor material layer 11 is covered with an insulating material that is included in the insulating film 30. A portion that covers the penetration surface is denoted by the reference sign 30C.
In the display device 5, a section of the semiconductor material layer 11 is not exposed to the pad opening PDOP. Accordingly, leakage between pad electrodes 26 that can be generated via the semiconductor material layer 11 can be avoided, and electrical reliability can be improved. Furthermore, moisture infiltration or moisture absorption that can be generated via the semiconductor material layer 11 can be prevented, and therefore a deterioration of the organic layer 33 can also be prevented.
A method for manufacturing the display device 5 also includes:
Then, in the method for manufacturing the display device 5, between the first process and the second process,
The method for manufacturing the display device 5 is described in detail below.
[Process-500]
First, [Process-100] to [Process-120] that have been described in the first embodiment are performed (see
[Process-510]
Next, [Process-140] to [Process-150] that have been described in the first embodiment are performed (see
A sixth embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
In the fifth embodiment, the penetration surface of the semiconductor material layer 11 is covered with an insulating material that is included in the insulating film 30. The sixth embodiment is different from this in that the penetration surface of the semiconductor material layer 11 is covered with an insulating material that is included in the protective film 40. A portion that covers the penetration surface is denoted by the reference sign 40B.
A method for manufacturing a display device 6 is described in detail below.
[Process-600]
First, [Process-300] and [Process-310] that have been described in the third embodiment are performed (see
[Process-610]
Next, the opening OP is provided to penetrate the semiconductor material layer 11 of the first substrate 10 in such a way that a region in which the pad opening PDOP will be formed is included (see
[Process-620]
Next, [Process-150] described in the first embodiment is performed (see
A seventh embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
In the sixth embodiment, the penetration surface of the semiconductor material layer 11 is covered with an insulating material that is included in the protective film 40. The sixth embodiment is different from this in that the penetration surface of the semiconductor material layer 11 is covered with an insulating material that is included in the color filter 41. A portion that covers the penetration surface is denoted by the reference sign 41B.
A method for manufacturing a display device 7 is described in detail below.
[Process-700]
First, [Process-400] and [Process-410] that have been described in the fourth embodiment are performed (see
[Process-710]
Next, the opening OP is provided to penetrate the semiconductor material layer 11 of the first substrate 10 in such a way that a region in which the pad opening PDOP will be formed is included (see
[Process-720]
Next, the color filter 41 is formed over an entire surface including the display region 80 and the pad region 90 (see
An eighth embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
In the seventh embodiment, the penetration surface of the semiconductor material layer 11 is covered with an insulating material that is included in the color filter 41. The eighth embodiment is different from this in that the penetration surface of the semiconductor material layer 11 is covered with an insulating material that is included in the microlens 42. A portion that covers the penetration surface is denoted by the reference sign 42B.
A method for manufacturing a display device 8 is described in detail below.
[Process-800]
First, [Process-400] and [Process-410] that have been described in the fourth embodiment are performed (see
[Process-810]
Thereafter, the opening OP is provided to penetrate the semiconductor material layer 11 of the first substrate 10 in such a way that a region in which the pad opening PDOP will be formed is included (see
[Process-820]
Next, after the microlens 42 has been formed over an entire surface including the display region 80 and the pad region 90, in a portion that corresponds to the display region 80, the counter substrate 44 is stuck via the sealing resin 43 (see
A ninth embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
A display device 9A has a configuration in which a section of the semiconductor material layer 11 is exposed in the pad opening PDOP. However, in the semiconductor material layer, an opening having a region that is wider than an exposed region of the pad electrode 26 has been provided.
A method for manufacturing the display device 9A also includes:
For example, when the connecting plug 31 is formed, an opening is provided in the semiconductor material layer 11 in the pad region 90. Thereafter, an opening that is smaller than this is provided, and the pad electrode 26 is exposed in a bottom. It is assumed that an offset fee of the two openings described above is, for example, about 5 μm. In the pad opening PDOP, a section of the semiconductor material layer 11 is retreated. Therefore, damage to the semiconductor material layer 11 due to measurement in proping, a wire donding process, or the like is reduced. As a result, leak between pad electrodes 26 is also prevented.
A tenth embodiment also relates to a display device and a method for manufacturing the display device, and an electronic device according to the present disclosure.
In a display device 9B, a pad electrode 26A has been formed on the insulating film 30. Then, the pad electrode 26A and the pad electrode 26 are electrically connected to each other via a connecting plug 31A.
In this configuration, a structure in which the pad electrode 26A is located on the insulating film 30 is employed, and therefore leak between pad electrodes or moisture absorption of the organic layer 33 can be reduced.
The display device according to the present disclosure that has been described above can be used as a display unit (a display device) of an electronic device in every field that displays, as an image or a video, a video signal that has been input to the electronic device or a video signal that has been generated in the electronic device. As an example, the display device according to the present disclosure can be used as a display unit of, for example, a television set, a digital still camera, a laptop personal computer, a portable terminal device such as a portable telephone, a video camera, a head-mounted display, or the like.
The display device according to the present disclosure also includes a device in a module shape that has a sealed configuration. An example is a display module formed by sticking a counter part such as transparent glass in a display region. Note that the display module may be provide with a circuit unit, a flexible printed circuit (FPC), or the like that is used to input or output a signal from an outside to the display region, or the like. As specific examples of an electronic device that uses the display device according to the present disclosure, a digital still camera and a head-mounted display are described below. However, the specific examples described here are only examples, and are not restrictive.
Then, roughly in a center of a rear surface of the camera body part 411, a monitor 414 has been provided. Above the monitor 414, a viewfinder (an eyepiece window) 415 has been provided. The person who captures an image looks in the viewfinder 415, and therefore the person can visually recognize an image of light of a subject that has been guided from the imaging lens unit 412, and can determine composition.
In the digital still camera of the lens-interchangeable single-lens reflex type that has the configuration described above, the display device according to the present disclosure can be used as the viewfinder 415. Stated another way, the digital still camera of the lens-interchangeable single-lens reflex type in this example is manufactured by using the display device according to the present disclosure as the viewfinder 415.
The body part 612 is connected to the arm 613 and glasses 600. Specifically, an end in a longer-side direction of the body part 612 is joined to the arm 613, and one side of a side surface of the body part 612 is coupled to the glasses 600 via a connecting member. Note that the body part 612 may be directly mounted in the head of a human body.
A control board that controls an operation of the see-through head-mounted display 611 or a display unit is incorporated into the body part 612. The arm 613 connects the body part 612 and the lens barrel 614, and supports the lens barrel 614. Specifically, the arm 613 is joined to each of an end of the body part 612 and an end of the lens barrel 614, and fixes the lens barrel 614. Furthermore, a signal line that communicates data of an image to be provided from the body part 612 to the lens barrel 614 is incorporated into the arm 613.
The lens barrel 614 projects image light that has been provided from the body part 612 via the arm 613, through an eyepiece toward eyes of a user who wears the see-through head-mounted display 611. In this see-through head-mounted display 611, the display device according to the present disclosure can be used as the display unit of the body part 612.
[Others]
Note that a technology of the present disclosure can also employ the configurations described below.
[A1]
A display device including:
The display device according to [A1] described above,
The display device according to [A2] described above,
The display device according to [A3] described above,
The display device according to [A3] described above, in which a protective film is formed on the second electrode, and
the insulating structure is formed by using an insulating material that is included in the protective film.
[A6]
The display device according to [A3] described above,
the insulating structure is formed by using an insulating material that is included in the color filter.
[A7]
The display device according to [A3] described above,
The display device according to [A2] described above,
The display device according to [A8] described above,
The display device according to [A8] described above,
The display device according to [A8] described above,
The display device according to [A8] described above,
The display device according to [A1] or [A2] described above,
The display device according to any of [A1] to [A13] described above,
A method for manufacturing a display device, the method including:
The method for manufacturing the display device according to [B1] described above, the method further including:
The method for manufacturing the display device according to [B2] described above,
in which between the first process and the second process,
The method for manufacturing the display device according to [B3] described above,
The method for manufacturing the display device according to [B3] described above, the method further including:
The method for manufacturing the display device according to [B3] described above, the method further including:
The method for manufacturing the display device according to [B3] described above, the method further including:
The method for manufacturing the display device according to [B2] described above,
The method for manufacturing the display device according to [B8] described above,
The method for manufacturing the display device according to [B3] described above, the method further including:
The method for manufacturing the display device according to [B3] described above, the method further including:
The method for manufacturing the display device according to [B3] described above, the method further including:
The method for manufacturing the display device according to [B3] described above,
An electronic device including a display device that includes:
The electronic device according to [C1] described above,
The electronic device according to [C2] described above,
The electronic device according to [C3] described above,
The electronic device according to [C3] described above,
The electronic device according to [C3] described above,
The electronic device according to [C3] described above,
The electronic device according to [C2] described above,
The electronic device according to [C8] described above,
The electronic device according to [C8] described above,
The electronic device according to [C8] described above,
The electronic device according to [C8] described above,
The electronic device according to [C1] or [C2] described above,
The electronic device according to any of [C1] to [C13] described above,
| Number | Date | Country | Kind |
|---|---|---|---|
| 2019-016645 | Feb 2019 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2020/002914 | 1/28/2020 | WO |
| Publishing Document | Publishing Date | Country | Kind |
|---|---|---|---|
| WO2020/158710 | 8/6/2020 | WO | A |
| Number | Name | Date | Kind |
|---|---|---|---|
| 20030137325 | Yamazaki et al. | Jul 2003 | A1 |
| 20110127629 | Yorikado | Jun 2011 | A1 |
| 20130056714 | Hasegawa et al. | Mar 2013 | A1 |
| 20140117334 | Nakamura et al. | May 2014 | A1 |
| 20150309637 | Sakuishi | Oct 2015 | A1 |
| 20190319221 | Ohchi | Oct 2019 | A1 |
| Number | Date | Country |
|---|---|---|
| 1434668 | Aug 2003 | CN |
| 102446933 | May 2012 | CN |
| 102969457 | Mar 2013 | CN |
| 103794739 | May 2014 | CN |
| 104009055 | Aug 2014 | CN |
| 105006481 | Oct 2015 | CN |
| 106663721 | May 2017 | CN |
| 1331666 | Jul 2003 | EP |
| 2003-288994 | Oct 2003 | JP |
| 2013033786 | Feb 2013 | JP |
| 2013-054863 | Mar 2013 | JP |
| 2014-089803 | May 2014 | JP |
| 2015-228018 | Dec 2015 | JP |
| 10-0979925 | Sep 2010 | KR |
| 20120070870 | Jul 2012 | KR |
| 10-2015-0123717 | Nov 2015 | KR |
| 126714 | Nov 2006 | SG |
| 200617822 | Jun 2006 | TW |
| 201417273 | May 2014 | TW |
| 201543982 | Nov 2015 | TW |
| 2018116629 | Jun 2018 | WO |
| Entry |
|---|
| International Search Report and Written Opinion of PCT Application No. PCT/JP2020/002914, issued on Mar. 3, 2020, 9 pages of ISRWO. |
| Number | Date | Country | |
|---|---|---|---|
| 20220102469 A1 | Mar 2022 | US |
