Claims
- 1. A method for manufacturing a semiconductor device, comprising the steps of:
- mounting a semiconductor chip on a substrate using an electrically conductive silicone elastomer composition comprising (A) 100 parts by weight of an organopolysiloxane consisting essentially of (a) 5-95% by weight of an acrylic functional group-containing organopolysiloxane having an average of at least two silicon-bonded acrylic groups per molecule having the formula: ##STR23## wherein R.sup.1 is a hydrogen atom or a monovalent hydrocarbon group. R.sup.2 is a hydrogen atom or a monovalent hydrocarbon group, and R.sup.3 is a divalent hydrocarbon group having 1-10 carbon atoms; and (b) 95-5% by weight of an alkenyl group-containing organopolysiloxane having an average of at least two silicon-bonded alkenyl groups per molecule: (B) a silicon-bonded hydrogen atom-containing organopolysiloxane having an average of at least two silicon-bonded hydrogen atoms per molecule, in a quantity sufficient to provide 0.5 to 20 moles of silicon-bonded hydrogen atoms in component (B) per mole of silicon-bonded alkenyl group in component (b); (C) 50-2,000 parts by weight of an electrically conductive filler: (D) 0.1-20 parts by weight of a photosensitizer: and (E) a platinum catalyst, in a sufficient quantity to cure the electrically conductive silicone elastomer composition;
- irradiating said composition with a high-energy beam to induce an acrylic functional group free radical reaction; and then
- allowing the composition to cure via a hydrosilylation reaction.
- 2. A method for manufacturing a semiconductor device, comprising the steps of:
- mounting a semiconductor chip on a substrate using an electrically conductive silicone elastomer composition comprising (A') 100 parts by weight of an alkenyl group-containing organopolysiloxane having an average of at least two silicon-bonded alkenyl groups per molecule, (B') a silicon bonded hydrogen atom-containing organopolysiloxane having an average of at least two silicon-bonded hydrogen atoms per molecule; in an amount sufficient to provide 0.5-20 moles of silicon-bonded hydrogen atoms in component (B') per mole of silicon-bonded alkenyl group in component (A'): (C) 50-2.000 parts by weight of an electrically conductive filler; (D) 0.1-20 parts by weight of a photosensitizer: and (E) a platinum catalyst, in an amount sufficient to cure the electrically conductive silicone elastomer composition: wherein at least one component selected from components (A') or (B') contains an average of at least two silicon-bonded acrylic groups per molecule having the formula ##STR24## wherein R.sup.1 is a hydrogen atom or a monovalent hydrocarbon group, R.sup.2 is a hydrogen atom or a monovalent hydrocarbon group, and R.sup.3 is a divalent hydrocarbon group having 1-10 carbon atoms;
- irradiating said composition with a high-energy beam to induce an acrylic functional group free radical reaction; and then
- allowing the composition to cure via a hydrosilylation reaction.
- 3. A method for manufacturing a semiconductor device, comprising the steps of:
- mounting a semiconductor chip on a substrate using a product obtained from the incipient materials: (A) 100 parts by weight of an organopolysiloxane consisting essentially of (a) 5-95% by weight of an acrylic functional group-containing orpanopolysiloxane having an average of at least two silicon-bonded acrylic groups per molecule having the formula: ##STR25## wherein R.sup.1 is a hydrogen atom or a monovalent hydrocarbon group. R.sup.2 is a hydrogen atom or a monovalent hydrocarbon group, and R.sup.3 is a divalent hydrocarbon group having 1-10 carbon atoms; and (b) 95-5% by weight of an alkenyl group-containing organopolysiloxane having an average of at least two silicon-bonded alkenyl groups per molecule: (B) a silicon-bonded hydrogen atom-containing organopolysiloxane having an average of at least two silicon-bonded hydrogen atoms per molecule, in a quantity sufficient to provide 0.5 to 20 moles of silicon-bonded hydrogen atoms in component (B) per mole of silicon-bonded alkenyl group in component (b); (C) 50-2,000 parts by weight of an electrically conductive filler: (D) 0.1-20 parts by weight of a photosensitizer: and (E) a platinum catalyst, in a sufficient quantity to cure the product;
- irradiating said product with a high-energy beam to induce an acrylic functional group free radical reaction; and then
- allowing the product to cure via a hydrosilylation reaction.
- 4. A method for manufacturing a semiconductor device, comprising the steps of:
- mounting a semiconductor chip on a substrate using a product obtained from the incipient materials: (A') 100 parts by weight of an alkenyl group-containing organopolysiloxane having an average of at least two silicon-bonded alkenyl groups per molecule: (B') a silicon bonded hydrogen atom-containing organopolysiloxane having an average of at least two silicon-bonded hydrogen atoms per molecule; in an amount sufficient to provide 0.5-20 moles of silicon-bonded hydrogen atoms in component (B') per mole of silicon-bonded alkenyl group in component (A'); (C) 50-2,000 parts by weight of an electrically conductive filler: (D) 0.1-20 parts by weight of a photosensitizer: and (E) a platinum catalyst in an amount sufficient to cure the product: wherein at least one component selected from components (A') or (B') contains an average of at least two silicon-bonded acrylic groups per molecule having the formula ##STR26## wherein R.sup.1 is a hydrogen atom or a monovalent hydrocarbon group, R.sup.2 is a hydrogen atom or a monovalent hydrocarbon group, and R.sup.3 is a divalent hydrocarbon group having 1-10 carbon atoms;
- irradiating said product with a high-energy beam to induce an acrylic functional group free radical reaction; and then
- allowing the product to cure via a hydrosilylation reaction.
- 5. A semiconductor device prepared by the method of claim 1.
- 6. A semiconductor device prepared by the method of claim 2.
- 7. A semiconductor device prepared by the method of claim 3.
- 8. A semiconductor device prepared by the method of claim 4.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-131435 |
Apr 1996 |
JPX |
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Parent Case Info
This application is a divisional of parent application, Ser. No. 08/840,475 filed Apr. 21, 1997, now U.S. Pat. No. 5,872,170.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5173765 |
Nakayoshi et al. |
Dec 1992 |
|
Foreign Referenced Citations (3)
Number |
Date |
Country |
238033 |
Sep 1987 |
EPX |
653463 |
May 1995 |
EPX |
WO 9210543 |
Jun 1992 |
WOX |
Divisions (1)
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Number |
Date |
Country |
Parent |
840475 |
Apr 1997 |
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