Patent Application
20090288602
The present invention relates to an electrode and a vacuum processing apparatus.
Conventionally, in plasma CVD apparatuses and the like, a reactant gas is supplied to a ladder-shaped gas-blowing type electrode provided in a vacuum plasma processing apparatus and decomposition reaction is caused on the reactant gas in a plasma atmosphere to thereby deposit a thin film on a substrate (substrate to be processed) (see, for example, Patent Citation 1).
Patent Citation 1: Japanese Unexamined Patent Application, Publication No. 2000-12471
To meet the demand for higher film deposition rate in recent years, it is necessary to supply a large amount of reactant gas to the gap between the electrode and the substrate. On the other hand, to meet the demand for higher film quality, it is necessary to increase the pressure of the supplied reactant gas and decrease the distance (gap length) between the electrode and the substrate. In this case, it is necessary to provide reactant gas supply and exhaust portions in a neighboring area between the electrode and the substrate. However, if gas injection holes for supplying the reactant gas are provided in the neighborhood of the substrate, the distribution and the like of the film deposited on the substrate become nonuniform because of the jet stream of the reactant gas jetted from the gas injection holes.
To deposit a high-quality film under a high-pressure gas condition as described above, it is necessary to localize the plasma discharge in the gap between the electrode and the substrate and insert the reactant gas only into the plasma discharge region where the plasma discharge is formed, and it is also necessary to quickly exhaust the reactant gas used for film deposition. Under the above-described high-pressure gas condition, the speed of reaction of the reactant gases in the gaseous phase is high, and gas molecules (minute particles) of high molecular weight are readily formed. If these minute particles are mingled in the film which is being deposited, it degrades the film quality.
To solve this problem, methods involving jetting the reactant gas from the back of the electrode when viewed from the substrate and jetting the reaction gas in a direction parallel to the surface of the substrate have been proposed. However, according to these methods, since the time during which the reactant gas stays in the plasma discharge region is long, the above-mentioned minute particles are very likely to be generated, so that it is difficult to improve the film quality.
On the other hand, when the jet stream of the reactant gas is directly jetted onto the substrate, a mark formed by the jet stream of the reactant gas (gas stream mark) is left on the deposited film, so that there is a danger that the distribution of the deposited film is nonuniform.
Examples of the high-pressure gas condition include a case where the flow speed of the jetted reaction gas is equal to or more than approximately 10 in Peclet number. Here, the Peclet number is expressed by (the flow speed of the reactant gas×a representative length)/(the diffusion coefficient of the reactant gas). Examples of a representative length include the diameter of the holes from which the reactant gas is jetted.
The present invention is made to solve the above-mentioned problem, and an object thereof is to provide an electrode and a vacuum processing apparatus capable of improving the film deposition rate and the uniformity of the distribution of the deposited film.
To attain the above-mentioned object, the present invention provides the following means:
A first aspect of the present invention provides an electrode including: a plurality of electrodes extending from positions arranged along a surface of a substrate to be processed separated by a predetermined interval; buffer chambers each extending along and between two of the electrodes; a plurality of first gas injection holes arranged in the direction in which the electrodes extend and which supply a reactant gas into the buffer chamber; and a second gas injection hole having a slit form extending in the direction in which the electrodes extend, and which supply the reactant gas from the buffer chamber toward the substrate to be processed.
According to the first aspect of the present invention, since the plurality of first gas injection holes supplying the reactant gas into the buffer chamber and the slit-form second gas injection hole supplying the reactant gas from the buffer chamber toward the substrate to be processed are provided, the speed of the film deposition on the substrate to be processed can be improved, and the uniformity of the distribution of the deposited film can be improved.
Since more than one first gas injection hole is provided in the direction in which the electrodes extend, the reactant gas can be uniformly supplied from each first gas injection hole into the buffer chamber. Since the second gas injection hole has a slit form extending in the direction in which the electrodes extend, the reactant gas can be uniformly supplied to the substrate to be processed, with respect to the direction in which the electrodes extend. Consequently, the uniformity of the distribution of the film deposited on the substrate to be processed can be improved. On the other hand, plasma discharge is made from the electrodes to the substrate to be processed, and the reactant gas jetted from the second gas injection hole provided in the buffer chambers each provided between two of the plurality of electrodes is supplied to the plasma discharge region. Consequently, a large amount of reactant gas can be supplied to the plasma discharge region to form plasma, so that the speed of the film deposition on the substrate to be processed can be improved. Further, since the reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas jetted from the second gas injection hole, the time during which the reactant gas stays in the plasma discharge region can be reduced. Consequently, the generation of minute particles can be prevented, so that the uniformity of the distribution of the film deposited on the substrate to be processed can be improved. For example, a uniform film distribution can be obtained even under conditions where the Peclet number is equal to or more than ten, under which it has previously been difficult to obtain a uniform film distribution.
In the above-described invention, it is preferable that an exhauster that exhausts the reactant gas from a gap between the substrate to be processed and the electrodes is provided in a position adjoining the buffer chamber and between the electrodes.
With this structure, since the exhauster is provided in the position adjoining the buffer chamber and between the electrodes, the uniformity of the distribution of the deposited film can be improved.
Since the exhauster exhausts the reactant gas from the gap between the substrate to be processed and the electrodes, the reactant gas staying in the plasma discharge region can also be exhausted. Consequently, the generation of minute particles can be prevented, so that the uniformity of the distribution of the film deposited on the substrate to be processed can be improved. Further, since the exhauster is disposed in the position adjoining the buffer chamber and between the electrodes, it is consequently situated in a position near the plasma discharge region. As a consequence, the reactant gas staying in the plasma discharge region is more easily exhausted, so that the uniformity of the distribution of the film deposited on the substrate to be processed can be further improved.
In the above-described invention, it is preferable that in each of the plurality of electrodes, a bent portion extending parallel to the surface of the substrate to be processed is provided at the end of the electrode facing the substrate to be processed.
With this structure, by the provision of the bent portion, the speed of the film deposition can be improved, and the uniformity of the distribution of the deposited film can be improved.
Since in each of the plurality of electrodes, the bent portion is provided at the end portion facing the substrate to be processed, plasma discharge is made from the bent portion to the substrate to be processed. At this time, since plasma discharge is made from the surface of the bent portion facing the substrate to be processed to the substrate to be processed, the plasma discharge region is increased. Consequently, the region where plasma is formed is increased, and the speed of the film deposition on the substrate to be processed is improved. Since the bent portion extends along the substrate to be processed, plasma discharge can be uniformly carried out from the bent portion to the substrate to be processed. Consequently, plasma of uniform density can be formed, so that the uniformity of the distribution of the film deposited on the substrate to be processed can be improved.
In the above-described invention, it is preferable that the direction in which the reactant gas is jetted from the first gas injection holes is different from the direction facing toward the second gas injection hole.
With this structure, since the direction in which the reactant gas is jetted from the first gas injection holes is different from the direction facing toward the second gas injection hole, the uniformity of the distribution of the deposited film can be improved.
Since the jetting direction of the reactant gas jetted from the first gas injection holes does not face toward the second gas injection hole, the reactant gas is not directly jetted from the second gas injection hole. That is, the reactant gas jetted from the first gas injection holes collides against one of the wall surfaces surrounding the buffer chamber, and then, is supplied from the second gas injection hole to the substrate to be processed. Consequently, the jet stream of the reactant gas is prevented from directly colliding against the substrate to be processed, so that the uniformity of the distribution of the film deposited on the substrate to be processed can be improved.
In the above-described invention, it is preferable that an intercepting portion that intercepts a flow of the reactant gas jetted from the first gas injection holes is provided.
With this structure, by the provision of the intercepting portion that intercepts the flow of the reactant gas jetted from the first gas injection holes, the uniformity of the distribution of the deposited film can be improved.
Since the intercepting portion is provided, the reactant gas jetted from the first gas injection holes collides against the intercepting portion first and then, is supplied from the second gas injection hole toward the substrate to be processed. That is, the jet stream of the reactant gas jetted from the first gas injection holes can be prevented from directly colliding against the substrate to be processed, through the second gas injection hole. Consequently, the jet stream of the reactant gas can be prevented from directly colliding against the substrate to be processed, and the uniformity of the distribution of the film deposited on the substrate to be processed can be improved.
A second aspect of the present invention provides a vacuum processing apparatus including a casing accommodating a substrate to be processed; and the electrode according to the above-described first aspect of the present invention.
According to the second embodiment of the present invention, by the provision of the electrode according to the first aspect of the present invention, the speed of the film deposition on the substrate to be processed accommodated in the casing can be improved, and the uniformity of the distribution of the deposited film can be improved.
According to the electrode of the first aspect and the vacuum processing apparatus of the second aspect of the present invention, by the provision of the plurality of first gas injection holes supplying the reactant gas into the buffer chamber and the slit-form second gas injection hole supplying the reactant gas from the buffer chamber toward the substrate to be processed, the speed of the film deposition on the substrate to be processed can be improved, and the uniformity of the film deposition can be improved.
Still other objects and advantages of the present invention will become readily apparent to those skilled in the art from the following detailed description, wherein the preferred embodiments of the invention are shown and described, simply by way of illustration of the best mode contemplated of carrying out the invention. As will be realized, the invention is capable of other and different embodiments, and its several details are capable of modifications in various obvious aspects, all without departing from the invention. Accordingly, the drawings and description thereof are to be regarded as illustrative in nature, and not as restrictive.
The present invention is illustrated by way of example, and not by limitation, in the figures of the accompanying drawings, wherein elements having the same reference numeral designations represent like elements throughout and wherein:
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Hereinafter, a plasma CVD apparatus according to a first embodiment of the present invention will be described with reference to
As shown in
The chamber 5 includes: the supplier 9 that supplies the reactant gas to the inside; the exhauster 11 that exhausts the reactant gas which has been used for film deposition; the power feeder 13 that supplies the high-frequency power used for plasma formation; and a pump (not shown) that reduces the pressure in the chamber 5 to a predetermined pressure.
The electrode units 7 are supplied with the high-frequency power from the power feeder 13 to thereby perform plasma discharge at the space between it and the substrate 3, and also supply the reactant gas to the substrate 3. The electrode units 7 are formed so as to extend in a predetermined direction (the direction of the X axis in
The supplier 9 supplies the reactant gas used for film deposition, to the electrode units 7. The exhauster 11 exhausts, from the chamber 5, the reactant gas which has been supplied from the electrode units 7 to the substrate 3 and has been used for film deposition.
The power feeder 13 supplies the high-frequency power to the electrodes to form a plasma discharge region between the electrode units 7 and the substrate 3. The frequency of the supplied high-frequency power is not specifically limited; a known frequency may be applied thereto. The substrate 3 is electrically connected to a ground electrode (not shown) provided in the chamber 5.
As shown in
The electrodes 17A and 17B are a pair of substantially plate-form members that extend from the mount 15 toward the substrate 3 (in the negative direction of the Z axis) and also extend perpendicular to the plane of the paper in
Further, a buffer chamber 25 surrounded by the mount 15, the electrodes 17A and 17B, and the bent portions 21A and 21B is formed in each electrode unit 7.
Gas injection holes (first gas injection holes) 27 supplying the reactant gas into the buffer chamber 25 are formed in the mount 15. The gas injection holes 27 are holes that allow the supply channel 19 and the buffer chamber 25 to communicate with each other, and are discretely arranged at predetermined intervals in the direction of the X axis. The gas injection holes 27 are formed so that the bent portion 21A coincides with the central axis of the hole. The arrangement of the gas injection holes 27 is not specifically limited; the gas injection holes 27 may be formed so that the bent portion 21A coincides with the central axis of the holes as mentioned above or may be formed so that the bent portion 21B coincides with the central axis.
As shown in
Next, the film deposition method of the plasma CVD apparatus 1 having the above-described structure will be described. First, the outline of the film deposition method of the plasma CVD apparatus 1 will be described.
First, as shown in
Next, the flow of the reactant gas in the neighborhood of the electrode unit 7 which is a characteristic part of the present embodiment, and the like will be described.
As shown in
Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high-frequency power from the power feeder 13, a plasma discharge region is formed between the electrodes 17A and 17B and the bent portions 21A and 21B, and the substrate 3.
The reactant gas that has flowed out from the slit 23 flows into the plasma discharge region and is ionized, transformed into plasma. The reactant gas transformed into plasma forms a predetermined film on the substrate 3.
The reactant gas transformed into plasma is made to flow out from the plasma discharge region toward the exhaust holes 28 provided between the electrode units 7 by being sucked into the exhaust hoes 28. The reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas that flows out from the slit 23.
At this time, since the width of the slit 23 is the predetermined width d1, approximately twice the plasma sheath length, the reactant gas transformed into plasma does not enter the buffer chamber 25. Further, since the width of the exhaust holes 28 is the predetermined interval d2 approximately twice the plasma sheath length, the reactant gas transformed into plasma does not enter the exhaust holes 28. Consequently, the reactant gas can be prevented from being ionized in the buffer chamber 25 and the exhaust holes 28. Because the width of the slit 23 is the predetermined width d1 and the width of the exhaust holes 28 is the predetermined interval d2, the plasma distribution in a direction orthogonal to the direction of length of the electrode unit 7 (the direction of the Y axis) be uniformized, so that the film thickness distribution can be prevented from being nonuniform.
According to the above-described structure, since the plurality of gas injection holes 27 supplying the reactant gas into the buffer chamber 25 and the slit-form slit 23 supplying the reactant gas from the buffer chamber 25 to the substrate 3 are provided, the speed of the film deposition on the substrate 3 can be improved and the uniformity of the distribution of the deposited film can be improved.
Since more than one gas injection hole 27 is provided in the direction in which the electrodes 17A and 17B extend, the reactant gas can be uniformly supplied from each gas injection hole 27 into the buffer chamber 25. Since the slit 23 has a slit form extending in the direction in which the electrodes 17A and 17B extend, the reactant gas can be uniformly supplied to the substrate 3 with respect to the direction in which the electrodes 17A and 17B extend. Consequently, the uniformity of the distribution of the film deposited on the substrate 3 can be improved. On the other hand, plasma discharge is made from the electrodes 17A and 17B to the substrate 3, and the reactant gas jetted from the slit 23 provided in the buffer chamber 25 between the electrodes 17A and 17B is supplied to the plasma discharge region. Consequently, a large amount of reactant gas can be supplied to the plasma discharge region to form plasma, so that the speed of the film deposition on the substrate 3 can be improved. Further, since the reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas jetted from the slit 23, the time during which the reactant gas stays in the plasma discharge region can be reduced. Consequently, the generation of minute particles can be prevented, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved. For example, a uniform film distribution can be obtained even under conditions where the Peclet number is equal to or more than ten, under which it has previously been difficult to obtain a uniform film distribution.
Since the exhaust holes 28 are sandwiched between the electrodes 17A and 17B of adjoining buffer chambers 25, the uniformity of the distribution of the deposited film can be improved.
Since the exhausts holes 28 exhausts the reactant gas from the gap between the substrate 3 and the electrodes, the reactant gas staying in the plasma discharge region can also be exhausted. Consequently, the generation of minute particles can be prevented, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved. Further, since the exhaust holes 28 is sandwiched between the electrodes 17A and 17B of adjoining buffer chambers 25, it is consequently situated in a position near the plasma discharge region. As a consequence, the reactant gas staying in the plasma discharge region is more easily exhausted, so that the uniformity of the distribution of the film deposited on the substrate 3 can be further improved.
Since the bent portions 21A and 21B are provided, the film deposition rate can be improved, and the uniformity of the distribution of the deposited film can be improved.
Since the bent portions 21A and 21B are provided on the end portions of the electrodes 17A and 17B facing the substrate 3, plasma discharge can be carried out from the bent portions 21A and 21B to the substrate 3. At this time, since plasma discharge is made from the surfaces of the bent portions 21A and 21B facing the substrate 3, toward the substrate 3, the plasma discharge region is increased. Consequently, the region where plasma is formed is increased to improve the speed of the film deposition on the substrate 3. Since the bent portions 21A and 21B extend along the substrate 3, plasma discharge can be uniformly carried out from the bent portions 21A and 21B to the substrate 3. Consequently, plasma of uniform density can be formed, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Since the jetting direction of the reactant gas jetted from the gas injection holes 27 is toward the bent portion 21A and is different from the direction facing toward the slit 23, the uniformity of the distribution of the deposited film can be improved.
Since the jetting direction of the reactant gas jetted from the gas injection holes 27 is not toward the slit 23, the reactant gas is not directly jetted from the slit 23. That is, the reactant gas jetted from the gas injection holes 27 collides against the bent portion 21A, and then, is supplied to the substrate 3 through the slit 23 because of the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from directly colliding against the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Next, a second embodiment of the present invention will be described with reference to
Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of the electrode units of the present embodiment is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the electrode units will be described by using
The same elements as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
As shown in
Gas injection holes (first gas injection holes) 127 supplying the reactant gas into the buffer chamber 25 are formed in the mount 115. The gas injection holes 127 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other, and are discretely arranged at predetermined intervals in the direction of the X axis. The gas injection holes 127 are obliquely formed so that the electrode 17A coincides with the central axes of the holes. The arrangement of the gas injection holes 27 is not specifically limited; the gas injection holes 27 may be obliquely formed so that the electrode 17A coincides with the central axes of the holes as mentioned above or may be obliquely formed so that the electrode 17B coincides with the central axes.
Next, the film deposition method of the plasma CVD apparatus 101 having the above-described structure will be described. Since the outline of the film deposition method of the plasma CVD apparatus 101 is similar to that of the first embodiment, description thereof is omitted.
Next, the flow of the reactant gas in the neighborhood of the electrode unit 107 which is a characteristic part of the present embodiment, and the like will be described.
As shown in
Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high-frequency power from the power feeder 13, a plasma discharge region is formed between the electrodes 17A and 17B and the bent portions 21A and 21B, and the substrate 3.
The reactant gas that flows out from the slit 23 flows into the plasma discharge region and is ionized, transformed into plasma. The reactant gas transformed into plasma forms a predetermined film on the substrate 3.
The reactant gas transformed into plasma is made to flow out from the plasma discharge region toward the exhaust holes 28 provided between the electrode units 107 by being sucked into the exhaust holes 28. The reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas which flows out from the slit 23.
According to the above-described structure, since the jetting direction of the reactant gas jetted from the gas injection holes 127 faces toward the electrode 17A and is different from the direction facing toward the slit 23, the uniformity of the distribution of the deposited film can be improved.
Since the jetting direction of the reactant gas jetted from the gas injection holes 127 does not face toward the slit 23, the reactant gas is not directly jetted from the slit 23. That is, the reactant gas jetted from the gas injection holes 127 collides against the electrode 17A, and then, is supplied to the substrate 3 through the slit 23 because of the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from directly colliding against the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Next, a third embodiment of the present invention will be described with reference to
Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of the electrode units thereof is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the electrode units will be described by using
The same elements as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
As shown in
Gas injection holes (first gas injection holes) 227 supplying the reactant gas into the buffer chamber 25 are formed in the electrodes 217A and 217B. The gas injection holes 227 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other, and are discretely arranged at predetermined intervals in the direction of the X axis. Specifically, the gas injection holes 227 direct the reactant gas from the supply channel in the mount 215 to the buffer chamber 25 through the mount 215 and the electrodes 217A and 217B. The gas injection holes 227 are formed so that the reactant gas is jetted into the buffer chamber 25 in a direction substantially parallel to the Y axis.
Next, the film deposition method of the plasma CVD apparatus 201 having the above-described structure will be described. Since the outline of the film deposition method of the plasma CVD apparatus 201 is similar to that of the first embodiment, description thereof is omitted.
Next, the flow of the reactant gas in the neighborhood of the electrode unit 207 which is a characteristic part of the present embodiment, and the like will be described.
As shown in
Since the electrodes 217A and 217B and the bent portions 21A and 21B are supplied with the high-frequency power from the power feeder 13, a plasma discharge region is deposited between the electrodes 217A and 217B and the bent portions 21A and 21B, and the substrate 3.
The reactant gas that flows out from the slit 23 flows into the plasma discharge region and is ionized, transformed into plasma. The reactant gas transformed into plasma forms a predetermined film on the substrate 3.
The reactant gas transformed into plasma is made to flow out from the plasma discharge region toward the exhaust holes 28 provided between the electrode units 207 by being sucked into the exhaust holes 28. The reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas that flows out from the slit 23.
According to the above-described structure, since the jetting direction of the reactant gas jetted from the gas injection holes 227 is toward the electrode 217A or 217B and is different from the direction facing toward the slit 23, the uniformity of the distribution of the deposited film can be improved.
Since the jetting direction of the reactant gas jetted from the gas injection holes 227 does not face toward the slit 23, the reactant gas is not directly jetted from the slit 23. That is, the reactant gas jetted from the gas injection holes 227 collides against the electrode 217A or 218B, and then is supplied to the substrate 3 through the slit 23 due to the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from directly colliding against the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Next, a fourth embodiment of the present invention will be described with reference to
Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of the electrode units thereof is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the electrode units will be described by using
The same elements as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
As shown in
Gas injection holes (first gas injection holes) 327 supplying the reactant gas into the buffer chamber 25 are formed in the bent portions 321A and 321B. The gas injection holes 327 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other, and are discretely arranged at predetermined intervals in the direction of the X axis. Specifically, the gas injection holes 327 direct the reactant gas from the supply channel in the mount 215 to the buffer chamber 25 through the mount 215, the electrodes 317A and 317B, and the bent portions 321A and 321B. The gas injection holes 327 are formed so that the reactant gas is jetted into the buffer chamber 25 in a direction substantially parallel to the Z axis and toward the mount 215.
Next, the film deposition method of the plasma CVD apparatus 301 having the above-described structure will be described. Since the outline of the film deposition method of the plasma CVD apparatus 301 is similar to that of the first embodiment, description thereof is omitted.
Next, the flow of the reactant gas in the neighborhood of the electrode unit 307 which is a characteristic part of the present embodiment, and the like will be described.
As shown in
Since the electrodes 317A and 317B and the bent portions 321A and 321B are supplied with the high-frequency power from the power feeder 13, a plasma discharge region is formed between the electrodes 317A and 317B and the bent portions 321A and 321B, and the substrate 3.
The reactant gas that flows out from the slit 23 flows into the plasma discharge region and is ionized, transformed into plasma. The reactant gas transformed into plasma forms a predetermined film on the substrate 3.
The reactant gas transformed into plasma is made to flow out from the plasma discharge region toward the exhaust holes 28 provided between the electrode units 307 by being sucked into the exhaust holes 28. The reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas that flows out from the slit 23.
According to the above-described structure, since the jetting direction of the reactant gas jetted from the gas injection holes 327 is toward the mount 215 and is different from the direction facing toward the slit 23, the uniformity of the distribution of the deposited film can be improved.
Since the jetting direction of the reactant gas jetted from the gas injection holes 327 does not face toward the slit 23, the reactant gas is not directly jetted from the slit 23. That is, the reactant gas jetted from the gas injection holes 327 collides against the mount 215, and then is supplied to the substrate 3 through the slit 23 due to the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from directly colliding against the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Next, a fifth embodiment of the present invention will be described with reference to
Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of the electrode units thereof is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the electrode units will be described by using
The same elements as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
As shown in
Gas injection holes (first gas injection holes) 427 supplying the reactant gas into the buffer chamber 25 are formed in the mount 415. The gas injection holes 427 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other, and are discretely arranged at predetermined intervals in the direction of the X axis. Specifically, the gas injection holes 427 direct the reactant gas from the supply channel in the mount 415 to the buffer chamber 25 through the mount 415. The openings of the gas injection holes 427 are formed so that the reactant gas is jetted from substantially the center of the mount 415 into the buffer chamber 25 in a direction substantially parallel to the Z axis and toward the slit 23.
The electrodes 417A and 417B have intercepting plates (intercepting portions) 419A and 419B intercepting the flow of the reactant gas jetted from the gas injection holes 427. The intercepting plate 419A is a plate member extending from the surface of the electrode 417A into the buffer chamber 25 toward the electrode 417B (in the positive direction of the Y axis) and extending perpendicular to the plane of the figure (in the direction of the X axis). The intercepting plate 419B is a plate member extending from the surface of the electrode 417B into the buffer chamber 25 toward the electrode 417A (in the negative direction of the Y axis) and extending in the direction perpendicular to the plane of the figure. In the present embodiment, the intercepting plate 419A is situated closer to the bending portion 21A than the intercepting plate 419B. On the other hand, the intercepting plate 419B is situated closer to the mount 415 than the intercepting plate 419A.
Next, the film deposition method of the plasma CVD apparatus 401 having the above-described structure will be described. Since the outline of the film deposition method of the plasma CVD apparatus 401 is similar to that of the first embodiment, description thereof is omitted.
Next, the flow of the reactant gas in the neighborhood of the electrode unit 407 which is a characteristic part of the present embodiment, and the like will be described.
As shown in
Since the electrodes 417A and 417B and the bent portions 21A and 21B are supplied with the high-frequency power from the power feeder 13, a plasma discharge region is formed between the electrodes 417A and 417B and the bent portions 21A and 21B, and the substrate 3.
The reactant gas that flows out from the slit 23 flows into the plasma discharge region and is ionized, transformed into plasma. The reactant gas transformed into plasma forms a predetermined film on the substrate 3.
The reactant gas transformed into plasma is made to flow out from the plasma discharge region toward the exhaust holes 28 provided between the electrode units 407 by being sucked into the exhaust holes 28. The reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas that flows out from the slit 23.
According to the above-described structure, since the intercepting plates 419A and 419B intercepting the flow of the reactant gas jetted from the gas injection holes 427 are provided, the uniformity of the distribution of the deposited film can be improved.
Since the intercepting plates 419A and 419B are provided, the reactant gas jetted from the gas injection holes 427 collides once against the intercepting plate 419A or 419B and then, is supplied from the slit 23 toward the substrate 3. That is, the jet stream of the reactant gas jetted from the gas injection holes 427 can be prevented from directly colliding against the substrate 3 through the slit 23. Consequently, the jet stream of the reactant gas can be prevented from directly colliding against the substrate 3, and the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Next, a sixth embodiment of the present invention will be described with reference to
Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of the surroundings of the gas injection holes is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the structure of the surroundings of the gas injection holes will be described by using
The same elements as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
As shown in
The mount 515 has gas injection holes (first gas injection holes) 527 supplying the reactant gas into the buffer chamber 25 and an intercepting portion 529 intercepting the flow of the reactant gas jetted from the gas injection holes 527. The gas injection holes 527 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other. The openings of the gas injection holes 527 are discretely arranged at predetermined intervals at the surface of the mount 515 facing the buffer chamber 25 in the direction of the X axis, either closer to the electrode 17A or closer to the electrode 17B with respect to a support plate 531 described later. Specifically, the gas injection holes 527 direct the reactant gas from the supply channel in the mount 515 to the buffer chamber 25 through the mount 515. The openings of the gas injection holes 527 are formed so that the reactant gas is jetted from the mount 515 into the buffer chamber 25 in the direction substantially parallel to the Z axis and toward the slit 23.
The intercepting portion 529 comprises the support plate 531 and an intercepting plate (intercepting portion) 533. The support plate 531 is disposed between the mount 515 and the intercepting plate 533, and supports the intercepting plate 533. The support plate 531 is a plate member extending from substantially the center of the surface of the mount 515 facing the buffer chamber 25 toward the substrate 3 (in the negative direction of the Z axis) and extending in a direction orthogonal to the plane of the figure (the direction of the X axis). The intercepting plate 533 intercepts the flow of the reactant gas jetted from the gas injection holes 527. The intercepting plate 533 is a plate member extending from the end of the support plate 531 toward the electrodes 17A and 17B (in the direction of the Y axis) and extending in the direction orthogonal to the plane of the figure. Both end portions of the intercepting plate 533 in the direction of the Y axis extend up to positions coinciding with the central axes of the gas injection holes 527.
Next, the film deposition method of the plasma CVD apparatus 501 having the above-described structure will be described. Since the outline of the film deposition method of the plasma CVD apparatus 501 is similar to that of the first embodiment, description thereof is omitted.
Next, the flow of the reactant gas in the neighborhood of the electrode unit 507 which is a characteristic part of the present embodiment, and the like will be described.
As shown in
Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high-frequency power from the power feeder 13, a plasma discharge region is formed between the electrodes 17A and 17B and the bent portions 21A and 21B, and the substrate 3.
The reactant gas that flows out from the slit 23 flows into the plasma discharge region and is ionized, transformed into plasma. The reactant gas transformed into plasma forms a predetermined film on the substrate 3.
The reactant gas transformed into plasma is made to flow out from the plasma discharge region toward the exhaust holes 28 provided between the electrode units 507 by being sucked into the exhaust holes 28. The reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas that flows out from the slit 23.
According to the above-described structure, since the intercepting portion 529 intercepting the flow of the reactant gas jetted from the gas injection holes 527 is provided, the uniformity of the distribution of the deposited film can be improved.
Since the intercepting portion 529 is provided, the reactant gas jetted from the gas injection holes 527 collides against the intercepting plate 533 first and then, is supplied from the slit 23 toward the substrate 3. That is, the jet stream of the reactant gas jetted from the gas injection holes 527 can be prevented from directly colliding against the substrate 3 through the slit 23. Consequently, the jet stream of the reactant gas can be prevented from directly colliding against the substrate 3, and the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Next, a seventh embodiment of the present invention will be described with reference to
Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of the surroundings of the gas injection holes is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the structure of the surroundings of the gas injection holes will be described by using
The same elements as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
As shown in
The mount 615 has: gas injection holes (first gas injection holes) 627 supplying the reactant gas into the buffer chamber 25; and a protruding portion 629 having the gas injection holes 627 formed therein. The gas injection holes 627 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other. The openings of the gas injection holes 627 are discretely arranged at predetermined intervals in the direction of the X axis in the surfaces of a support plate 631, described later, facing the electrode 17A and facing the electrode 17B. Specifically, the gas injection holes 627 direct the reactant gas from the supply channel in the mount 615 to the buffer chamber 25 through the mount 615 and the support plate 631. The openings of the gas injection holes 627 are formed so that the reactant gas is jetted from the mount 615 into the buffer chamber 25 in the direction substantially parallel to the Y axis.
The protruding portion 629 has the support plate 631 and an end plate 633. The support plate 631 is disposed between the mount 615 and the end plate 633, and supports the end plate 633. The support plate 631 is a plate member extending from substantially the center of the surface of the mount 615 into the buffer chamber 25 toward the substrate 3 (in the negative direction of the Z axis) and extending in the direction orthogonal to the plane of the figure (the direction of the X axis). The end plate 633 is a plate member extending from the end of the support plate 631 toward the electrodes 17A and 17B (in the direction of the Y axis) and extending in the direction orthogonal to the plane of the figure.
Next, the film deposition method of the plasma CVD apparatus 601 having the above-described structure will be described. Since the outline of the film deposition method of the plasma CVD apparatus 601 is similar to that of the first embodiment, description thereof is omitted.
Next, the flow of the reactant gas in the neighborhood of the electrode unit 607 which is a characteristic part of the present embodiment, and the like will be described.
As shown in
Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high-frequency power from the power feeder 13, a plasma discharge region is formed between the electrodes 17A and 17B and the bent portions 21A and 21B, and the substrate 3.
The reactant gas that flows out from the slit 23 flows into the plasma discharge region and is ionized, transformed into plasma. The reactant gas transformed into plasma forms a predetermined film on the substrate 3.
The reactant gas transformed into plasma is made to flow out from the plasma discharge region toward the exhaust holes 28 provided between the electrode units 607 by being sucked into the exhaust holes 28. The reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas that flows out from the slit 23.
According to the above-described structure, since the jetting direction of the reactant gas jetted from the gas injection holes 627 is toward the electrodes 17A and 17B and is different from the direction facing toward the slit 23, the uniformity of the distribution of the deposited film can be improved.
Since the jetting direction of the reactant gas jetted from the gas injection holes 627 does not face toward the slit 23, the reactant gas is not directly jetted from the slit 23. That is, the reactant gas jetted from the gas injection holes 627 collides against the electrodes 17A and 18B, and then is supplied from the slit 23 to the substrate 3 because of the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from directly colliding against the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Next, an eighth embodiment of the present invention will be described with reference to
Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of the surroundings of the gas injection holes is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the structure of the surroundings of the gas injection holes will be described by using
The same elements as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
As shown in
The electrodes 17A and 17B are disposed on the mount 715.
The supply tube 729 is a channel through which the reactant gas supplied from the supplier 9 (see
Gas injection holes (first gas injection holes) 727 supplying the reactant gas into the buffer chamber 25 are formed in the supply tube 729. The gas injection holes 727 are holes that allow the supply tube 729 and the buffer chamber 25 to communicate with each other. The openings of the gas injection holes 727 are discretely arranged at predetermined intervals in the direction of the X axis, and are formed so that the reactant gas is jetted from the supply tube 729 toward the mount 715 (in the positive direction of the Z axis).
Next, the film deposition method of the plasma CVD apparatus 701 having the above-described structure will be described. Since the outline of the film deposition method of the plasma CVD apparatus 701 is similar to that of the first embodiment, description thereof is omitted.
Next, the flow of the reactant gas in the neighborhood of the electrode unit 707 which is a characteristic part of the present embodiment, and the like will be described.
As shown in
Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high-frequency power from the power feeder 13, a plasma discharge region is formed between the electrodes 17A and 17B and the bent portions 21A and 21B, and the substrate 3.
The reactant gas that flows out from the slit 23 flows into the plasma discharge region and is ionized, transformed into plasma. The reactant gas transformed into plasma forms a predetermined film on the substrate 3.
The reactant gas transformed into plasma is made to flow out from the plasma discharge region toward the exhaust holes 28 provided between the electrode units 707 by being sucked into the exhaust holes 28. The reactant gas in the plasma discharge region is pushed out from the plasma discharge region by the reactant gas that flows out from the slit 23.
According to the above-described structure, since the jetting direction of the reactant gas jetted from the gas injection holes 727 faces toward the mount 715 and is different from the direction facing toward the slit 23, the uniformity of the distribution of the deposited film can be improved.
Since the jetting direction of the reactant gas jetted from the gas injection holes 727 does not face toward the slit 23, the reactant gas is not directly jetted from the slit 23. That is, the reactant gas jetted from the gas injection holes 727 collides against the mount 715, and then is supplied from the slit 23 to the substrate 3 because of the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from directly colliding against the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.
Next, results of a microcrystalline silicon film deposition test using a conventional electrode and the electrode according to the above-described first embodiment will be described.
First, an outline of the structure of the conventional electrode unit used for the film deposition test will be described by using
In the conventional electrode unit 7X, as shown in
Specifically, the distance between the substrate 3 and the electrode unit 7X is approximately 2 mm, and the diameter of the gas injection holes 27 is a predetermined value in a range of approximately 0.3 mm to approximately 0.5 mm.
Further, the width of the slit 23X of the electrode unit 7X is a predetermined value in a range of approximately 3 mm to approximately 5 mm.
In the case of the electrode unit 7X, the reactant gas which has exited from the gas injection holes 27 becomes a jet stream and heads for the substrate 3. That is, since the jet stream of the reactant gas passes through the plasma discharge region between the substrate 3 and the electrode unit 7Xto be directly blown against the substrate 3, the possibility is high that the film deposited on the substrate 3 is nonuniform.
Next, an outline of the structure of the electrode unit according to the first embodiment used for the film deposition test will be described by using
In the electrode unit 7 according to the first embodiment, as shown in
Specifically, as in the case of the above-described electrode unit 7X, the distance between the substrate 3 and the electrode unit 7 is approximately 2 mm, and the diameter of the gas injection holes 27 is a predetermined value in a range of approximately 0.3 mm to approximately 0.5 mm.
Further, the width of the slit 23 of the electrode unit 7 of the first embodiment is a predetermined value in a range of approximately 4 mm to approximately 6 mm, and the lateral distance by which the center line of the slit 23 is offset from the gas injection holes 27 is a predetermined value in a range of approximately 4 mm to approximately 6 mm. Further, the volume of the buffer chamber 25 is a predetermined value in a range of approximately 8000 mm3 to approximately 10000 mm3.
The bent portions 21A and 21B of the electrodes 17A and 17B which have an L shape and face the substrate 3 temporarily catch the jet stream of the reactant gas jetted from the gas injection holes 27 with their surfaces which are on the inner side of electrodes 17A and 17B. That is, a gas jet stream buffering portion, that is, the buffer chamber 25, is formed on the surfaces of the bent portions 21A and 21B which are on the inner side of the electrodes 17A and 17B to prevent the jet stream of the reactant gas from being directly blown against the substrate 3 through the plasma discharge region.
Thereby, the reactant gas uniformly flows out from the slit 23 into the plasma discharge region, so that the film deposited on the substrate 3 is prevented from being nonuniform.
The difference in crystallinity between the microcrystalline silicon films deposited on the substrate 3 by using the conventional electrode unit 7X and the electrode unit 7 of the first embodiment will be described by using
The condition of the microcrystalline silicon film deposition in the film deposition test is as described in the following:
The frequency of the high-frequency power supplied from the power feeder 13 is approximately 170 MHz. The pressure of the supplied reactant gas is approximately 4000 Pa (30 Torr), and the ratio of the silane flow amount to the hydrogen flow amount in the supplied reactant gas is 5 to 600.
The measurement of the crystallinity of the microcrystalline silicon film deposited on the substrate 3 is performed at three points: position M1, position M2, and position M3 shown in
The position M1 faces the slit 23X and the slit 23. The position M2 faces the center of the electrode 17XA or 17XB and the electrode 17A or 17B. The position M3 faces the edge of the electrode 17XA or 17XB and the electrode 17A or 17B.
The numerical values of the crystallinity shown in
As shown by the hollow circles and the solid lines of
On the other hand, in the microcrystalline silicon film (the black squares and the dotted lines) deposited by the electrode unit 7 according to the first embodiment, the values of the crystallinity are substantially the same in the area between the position M1 and the position M3. From this, it is apparent that the microcrystalline silicon film deposited by the electrode 7 is more excellent in uniformity than the microcrystalline silicone film deposited by the conventional electrode unit 7X.
The technical scope of the present invention is not limited to the above-described embodiments, but various modifications may be made without departing from the purport of the present invention.
For example, while the present invention is applied to a plasma CVD apparatus in the above-described embodiments, the present invention is not limited to the plasma CVD apparatus but may be applied to various vacuum processing apparatuses.
It will be readily seen by one of ordinary skill in the art that the present invention fulfils all of the objects set forth above. After reading the foregoing specification, one of ordinary skill in the art will be able to affect various changes, substitutions of equivalents and various aspects of the invention as broadly disclosed herein. It is therefore intended that the protection granted hereon be limited only by definition contained in the appended claims and equivalents thereof.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2006-082690 | Mar 2006 | JP | national |
The present Application is based on International Application No. PCT/JP2007/055768, filed on Mar. 20, 2007, which in turn corresponds to Japanese Application No. 2006-082690 filed on Mar. 24, 2006, and priority is hereby claimed under 35 USC §119 based on these applications. Each of these applications are hereby incorporated by reference in their entirety into the present application.
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2007/055768 | 3/20/2007 | WO | 00 | 10/21/2008 |
