Patent Grant
7462851
1. Field of the Invention
The present invention relates to a radiation source, a lithographic apparatus, a device manufacturing method and a device manufactured thereby.
2. Description of the Related Art
A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning device, such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. including part of one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic apparatus include steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at once, and scanners, in which each target portion is irradiated by scanning the pattern through the beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. In a lithographic apparatus as described above a device for generating radiation or radiation source will be present.
In a lithographic apparatus the size of features that can be imaged onto a substrate is limited by the wavelength of the projection radiation. To produce integrated circuits with a higher density of devices, and hence higher operating speeds, it is desirable to be able to image smaller features. While most current lithographic projection apparatus employ ultraviolet light generated by mercury lamps or excimer lasers, it has been proposed to use shorter wavelength radiation of around 13 nm. Such radiation is termed extreme ultraviolet, also referred to as XUV or EUV, radiation. The abbreviation ‘XUV’ generally refers to the wavelength range from several tenths of a nanometer to several tens of nanometers, combining the soft x-ray and vacuum UV range, whereas the term ‘EUV’ is normally used in conjunction with lithography (EUVL) and refers to a radiation band from approximately 5 to 20 nm, i.e. part of the XUV range.
Two main types of XUV electromagnetic radiation sources or sources are currently being pursued, a laser-produced plasma (LPP) and a discharge-produced plasma (DPP). In an LPP source, one or more pulsed laser beams are typically focused on a jet of liquid or solid to create a plasma that emits the desired radiation. The jet is typically created by forcing a suitable material at high speed through a nozzle. Such a device is described in U.S. Pat. No. 6,002,744, which disloses an LPP EUV source including a vacuum chamber into which a jet of liquid is injected using a nozzle.
In general, LPP sources have several advantages compared to DPP sources. In LPP sources, the distances between the hot plasma and the source surfaces are relatively large, reducing damage to the source components and thus reducing debris production. The distances between the hot plasma and the source surfaces are relatively large, reducing the heating of these surfaces, which in turn reduces the need for cooling and reduces the amount of infra-red radiation emitted by the source. The relatively open geometry of the construction allows radiation to be collected over a wide range of angles, increasing the efficiency of the source.
In contrast, a DPP source generates plasma by a discharge in a substance, for example a gas or vapor, between an anode and a cathode, and may subsequently create a high-temperature discharge plasma by Ohmic heating caused by a pulsed current flowing through the plasma. In this case, the desired radiation is emitted by the high-temperature discharge plasma. Such a device is described in U.S. Patent Application Publication 2004/0105082 A1, published Jun. 3, 2004, in the name of the applicant. This application describes a radiation source providing radiation in the EUV range of the electromagnetic spectrum (i.e. of 5-20 nm wavelength). The radiation source includes several plasma discharge elements, and each element includes a cathode and an anode. During operation, the EUV radiation is generated by creating a pinch as described in FIGS. 5A to 5E of U.S. Patent Application Publication 2004/0105082 A1. The application discloses the triggering of the pinch using an electric potential and/or irradiating a laser beam on a suitable surface. The laser used has typically a lower power than the laser(s) used in an LPP source.
In general, however, DPP sources have several differences compared to LPP sources. In DPP sources, the efficiency of the source is higher, approximately 0.5% for a DPP compared to 0.05% for an LPP. DPP sources also have a lower cost and require fewer, less expensive part replacements.
An improved source which combines the characteristics of a DPP electromagnetic radiation source or source with many characteristics of an LPP source is described in U.S. Patent Application Publication 2006/0011864 A1, published Jan. 6, 2006 in the name of the applicant. Although this source may reduce the amount of contamination produced, it will still produce debris from the discharge substance and ions which may enter the rest of the system. An additional problem with this source is the difficulty in using a discharge substance in the liquid state—for example pumping, transport and filtering need to be performed at a temperature above the melting point of the substance. In some cases, such as when using tin or lithium, the temperature of the liquid circuit has to be maintained above 230° C. and 180° C. respectively which considerably increase the complexity and cost of the source, and reduces the overall efficiency.
When any DPP source is operated using a discharge substance, such as tin, the contamination created in the form of debris and/or ions is relatively difficult to stop by means known in the art, such as foil-traps and magnetic/electric fields. Chemically-aggressive hot melted metals, such as tin, cause faster corrosion of most technologically convenient constructing materials, such as tungsten and molybdenum. This poses a serious threat to the apparatus using the source, for example a lithographic projection apparatus. This threat becomes significantly larger when the sources are scaled up in size and/or power in an attempt to create more intense radiation to increase the throughput of such a lithographic apparatus.
It is an aspect of the present invention to provide an DPP electromagnetic radiation source which produces contamination that can be more easily prevented from exiting the source. The source is especially suitable for generating EUV radiation, but may be used to generate radiation outside the EUV range, for example X-rays.
According to an embodiment of the present invention, an electromagnetic radiation source is provided, comprising an anode and a cathode defining a discharge space; a discharge material supply for providing a suitable substance to the discharge space; a discharge power supply connected to the anode and the cathode and configured to create a discharge in said substance to form a plasma so as to generate electromagnetic radiation having a spectral profile, wherein said substance comprises a first and second multiplicity of elements such that the elements of the first multiplicity substantially determine the spectral profile, and the elements of the second multiplicity have a lower atomic weight than the elements of the first multiplicity.
The electromagnetic radiation source according to the present invention uses a discharge substance comprising a substantial amount of elements with a lower atomic weight, and a reduced amount of elements with the highest atomic weight. Conventionally, the substance used in a discharge source is chosen for its emission spectrum, typically comprising an intense peak at a desired wavelength (e.g. the 13.5 nm peak seen when using a discharge substance containing tin). Contrary to what the skilled person would expect, it is possible to use a mixture as a discharge substance, in which the amount of the element chosen for its spectral profile is less than 100%, without significantly altering the intensity of the spectral peak.
As the percentage of heavier elements present in the discharge source is reduced, the percentage of heavier elements present in the contamination (as debris and/or ions) is also reduced. This directly increases the efficiency of the anti-contamination measures because they are typically more effective against lighter elements.
In a further embodiment, the amount of elements chosen for its spectral profile may be reduced to a minority of the total discharge substance, without substantially affecting the peak intensity, and thus without substantially affecting the amount of radiation leaving the source.
In a still further embodiment, the amount of the element chosen for its spectral profile is reduced by adding a second element chosen to also reduce the melting point of the discharge substance. This reduces the source complexity and cost because the temperature at which the liquid is handled is reduced. This is particularly desirable when the discharge substance is introduced as a jet electrode, because the temperature of the discharge space must also be maintained above the melting point of the jets.
In an even further embodiment, the two elements are combined as an alloy in the discharge substance. An alloy may be selected to have an eutectic melting point which is lower than the melting points of the constituent elements, for example, indium has a melting point of approximately 156° C., tin a melting point of approximately 230° C. and a 53% In/47% Sn alloy has an eutectic melting point of 119° C.
In a yet further embodiment, the first element, chosen for its spectral profile, is tin (Sn) and the second element is gallium. A discharge substance comprising an alloy of 8.5% tin and 81.5% gallium has been found in practice to have an acceptable peak intensity at 13.5 nm while reducing the amount of heavier contamination to a minority, and providing a lower melting point for handling.
In another embodiment of the present invention, a lithographic apparatus includes such a source. By reducing the heavy element contamination output, the source is much more suitable for use with an apparatus which typically comprises expensive mirrors which are easily contaminated, and often difficult or time-consuming to clean.
In still another embodiment of the present invention, a method for the generation of electromagnetic radiation comprises providing a suitable substance to a discharge space defined by an anode and a cathode, wherein said substance comprises a first and second multiplicity of elements; create a discharge in said substance to form a plasma so as to generate electromagnetic radiation having a spectral profile; wherein the first multiplicity of elements are provided to substantially determine the spectral profile, and the second multiplicity of elements are provided to increase the percentage of elements in the discharge space having a lower atomic weight than the elements of the first multiplicity.
Optionally, the second multiplicity of elements may provided to reduce the melting point of the discharge substance.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be appreciated that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. It should be appreciated that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “patterning device” used herein should be broadly interpreted as referring to a device that can be used to impart a beam of radiation with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
Patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions; in this manner, the reflected beam is patterned.
The support supports, e.g. bares the weight of, the patterning device. It holds the patterning device in a way depending on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, for example whether or not the patterning device is held in a vacuum environment. The support can be using mechanical clamping, vacuum, or other clamping techniques, for example electrostatic clamping under vacuum conditions. The support may be a frame or a table, for example, which may be fixed or movable as required and which may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system.”
The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens.”
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
The lithographic apparatus may also be of a type wherein the substrate is immersed in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. Immersion liquids may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the first element of the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
a depicts a radiation source according to the prior art;
b shows a cross-section along line IIIb-IIIb of the jets in
a depicts a radiation source according to another embodiment of the invention;
b depicts a cross-section along line Vb-Vb in
As here depicted, the apparatus is of a reflective type (e.g. employing a reflective mask or a programmable mirror array of a type as referred to above). Alternatively, the apparatus may be of a transmissive type (e.g. employing a transmissive mask).
The illuminator IL as known in the art receives radiation from a electromagnetic radiation source SO and conditions the radiation. The electromagnetic radiation source and the lithographic apparatus 1 may be separate entities, for example when the electromagnetic radiation source is a plasma discharge source. In such cases, the electromagnetic radiation source is not considered to form part of the lithographic apparatus and the radiation is generally passed from the electromagnetic radiation source SO to the illuminator IL with the aid of a radiation collector including, for example, suitable collecting mirrors and/or a spectral purity filter. In other cases the electromagnetic radiation source may be integral part of the apparatus, for example when the electromagnetic radiation source is a mercury lamp. The electromagnetic radiation source SO and the illuminator IL may be referred to as a radiation system.
The illuminator IL may include an adjusting device to adjust the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. The illuminator provides a conditioned beam of radiation PB having a desired uniformity and intensity distribution in its cross-section.
The beam PB is incident on the mask MA, which is held on the mask table MT. Being reflected by the mask MA, the beam PB passes through projection system PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning device PW and a position sensor IF2 (e.g. an interferometric device), the substrate table WT can be moved accurately to position different target portions C in the path of the beam PB. Similarly, the first positioning device PM and a position sensor IF1 (e.g. an interferometric device) can be used to accurately position the mask MA with respect to the path of the beam PB, for example after mechanical retrieval from a mask library, or during a scan. In general, movement of the object tables MT and WT will be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the positioning devices PM and PW. However, in the case of a stepper, as opposed to a scanner, the mask table MT may be connected to a short stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.
The depicted apparatus can be used in the following modes:
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
Referring to
By using an electrically conductive material like Sn, In or Li or a combination thereof, the jets 33a, 33k are in electrical contact with the voltage source 41 and thus form electrodes. One of the jets 33a is provided with a positive voltage and functions as an anode whereas the other jet 33k is provided with a negative voltage and functions as a cathode. The jets 33a, 33k each end in respective reservoirs 35a, 35k where the fluid is collected. The length of jets 33a, 33k are chosen to be long enough, for example approximately 3-30 cm for 0.2-1 mm jet thickness, so that the jets 33a, 33k disintegrate in separate droplets 48, 47, respectively, close to the reservoirs 35a, 35k. This will avoid a direct electrical contact between the reservoirs 35a, 35k and the high voltage source 41. It should be appreciated that one common reservoir may be provided instead of the two separate reservoirs 35a, 35k shown in
A pulsed laser source 37 is provided in the housing 32. Typical parameters are: energy per pulse Q is approximately 10-100 mJ for a Sn discharge and approximately 1-10 mJ for a Li discharge, duration of the pulse τ=1-100 ns, laser wavelength λ=0.2-10 μm, frequency 5-100 kHz. The laser source 37 produces a laser beam 38 directed to the jet 33k to ignite the conductive material of the jet 33k. Thereby, material of the jet 33k is evaporated and pre-ionized at a well defined location, i.e. the location where the laser beam 38 hits the jet 33k. From that location a discharge 40 towards the jet 33a develops. The precise location of the discharge 40 can be controlled by the laser source 37. This is desirable for the stability, i.e. homogeneity, of the electromagnetic radiation source and will have an influence on the constancy of the radiation power of the electromagnetic radiation source. This discharge 40 generates a current between the jet 33k and the jet 33a. The current induces a magnetic field. The magnetic field generates a pinch, or compression, 45 in which ions and free electrons are produced by collisions. Some electrons will drop to a lower band than the conduction band of atoms in the pinch 45 and thus produce radiation 39. When the material of the jets 33a, 33k is chosen from Sn, In or Li or any combination thereof, the radiation 39 includes large amounts of EUV radiation. The radiation 39 emanates in all directions and may be collected by a radiation collector in the illuminator IL of
Tests have shown that the radiation 39 is isotropic at least at angles to a Z-axis with an angle θ=45-105°. The Z-axis refers to the axis aligned with the pinch and going through the jets 33a, 33k and the angle θ is the angle with respect to the Z-axis. The radiation 39 may be isotropic at other angles as well. Pressures p provided by the nozzles 31 follow from the well known relation p=½ρv2, where p refers to the density of the material ejected by the nozzles and v refers to the velocity of the material. It follows that p=4-400 atm for Sn or In at a velocity v=10-100 m/s and p=0.2-20 atm for Li at a velocity v=10-100 m/s.
The nozzles 31 may have a circular cross-section of 0.3-3 mm diameter. Depending on the particular form of the nozzle 31 it is however possible to have jets 33a, 33k with a square cross-section, as shown in
In the case of flat-shaped electrodes as shown in
One millimeter round jets 33a, 33k with a mutual distance of approximately 3-5 mm may, in principle, allow a collection angle of nearly 4π. Also, any combination of flat-shaped and round jets 33a, 33k is possible. The diameter of the jets 33a, 33k is close to that of the nozzles in the case of a round electrode.
Jets at a high velocity of approximately 10-100 m/s may be used. These velocities enable a length of stability of 0.3-3 cm that is long enough. At large distances, for example 5-10 cm from the nozzles 31, a line of droplets 47, 48 will be produced instead of jets. Therefore, there is no electrical contact between the jets 33a, 33k which are on a high voltage and the droplets 47, 48 that can be gathered in one common reservoir 35. Thin, flat jets disintegrate faster than round ones. If the jets 33a, 33k have not disintegrated upon reaching such a common reservoir 35 they must be gathered separately i.e. each in a separate reservoir 35k, 35a as shown in
Although the embodiment in
In the description above, the laser beam 38, also referred to as “ignition laser,” is directed to the surface of the jet, and creates locally a small cloud of ionized gas. The jets 33a, 33k supply working material (plasma material), for example Sn, In, or Li, to produce the radiation 39.
Referring to
Referring to
The material in the jets 33a, 33k may include droplet type debris. The nozzles 31 impart an impulse to this material and hence to the debris in a specific direction, for example along a straight line trajectory. As the radiation 39 emanates more or less isotropically, there will be a substantial amount of radiation 39 that will be substantially free of debris.
The small sizes of the jets 33a, 33k define a electromagnetic radiation source having a small size and a large collection angle. The size of the electromagnetic radiation source SO″ is mainly limited by the sizes of the jets 33a, 33k. Typical dimensions for the jets 33a, 33k may be: thickness approximately 0.1-1 mm, width approximately 1-3 mm, length approximately 0.3-3 cm, gap approximately 3-5 mm. These parameters result in a relatively large collectable angle.
Alternatively, in the embodiments described above, both the jets 33k and 33a are produced as a conductive fluid jet. However, the anode may be a fixed anode. However, then anode material may come in the space surrounding the source.
Ignition of the discharge between the jets 33k and 33a is described above as being triggered by a laser beam 38. However, such an ignition may be triggered by an electron beam, or any other suitable ignition source.
The liquid metals mentioned, such as tin and indium, have been chosen for the spectral profile of the resulting electromagnetic radiation. However, they are relatively heavy elements (see Table 1).
This shows that contamination created by the source in the form of debris and ions are also relatively heavy. Measures to prevent contamination leaving the source and entering the apparatus using the emitted radiation, such as foil traps, cold traps and electromagnetic fields tend to function less efficiently as the elements become heavier. The conventional approach has, therefore, been to increase the size/strength of the contamination counter measures, increasing size and complexity. The other approach of reducing the amount of tin or indium will reduce the output of the source because of the reduction in the amount of plasma which may be created.
Surprisingly, it was found that tin can be combined with a second element without significantly reducing the electromagnetic output of the source, especially when considering the peak at approximately 13.5 nm which appears in the emission spectrum of tin. In this experiment, the discharge spectra were compared between a solid-electrode discharge source operating tin as a discharge substance, and the same source operating with an alloy of tin and gallium.
In some cases, the amount of tin may even be in the minority and yet the spectral emission will be only slightly changed.
In similar experiments, it was found that there was no significant difference in intensity between 100% tin and 15-25% tin/85-75% gallium. Similarly, alloys of indium/gallium, indium/lithium, tin/lithium, lithium/gallium may be advantageous.
Even with the slight reduction in the peak intensities, the reduction in heavy atom/ion debris and consequent corrosion, and the improvement in the efficiency of the overall atom/ion debris prevention is a major technical advantage.
Additionally, metals such as tin, indium and lithium also have a moderately high melting point (see Table 2).
Depending on the design, material delivery to the inter-electrode gap may require a high temperature to be maintained in large volumes. This is true not only for the configuration with regenerating electrodes described above, but also for configurations such as those described in U.S. Patent Application Publications 2004/0105082 A1 and 2004/0141165 A1, which are incorporated herein by reference.
Use of a second element combined with the element chosen for its emission spectrum may also be implemented to reduce the melting point either as a primary goal, or in combination with the advantage of lighter contamination. The extent to which each of these is achieved is determined by the elements used in the discharge substance, and the method of combination of elements. For example, alloys may be used to lower the (eutectic) melting point (see Table 3)
Similarly, alloys of indium/gallium, indium/tin, tin/lithium, and gallium/lithium may be desirable.
Similarly, alloys of more than two materials may be desirable (see Table 4).
Additionally, it is may be desirable to use an alloy of two or more substances for a LPP (laser-produced plasma source) to reduce the temperature requirements for liquid handling. A suitable LPP source is described in U.S. Patent Application Publication 2005/0077483 A1, which is incorporated herein by reference.
While specific embodiments of the invention have been described above, it should be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention.
This application claims priority to U.S. Application 60/719,559, filed Sep. 23, 2005, the entire contents of which are incorporated herein by reference.
| Number | Name | Date | Kind |
|---|---|---|---|
| 6002744 | Hertz et al. | Dec 1999 | A |
| 20040105082 | Koshelev et al. | Jun 2004 | A1 |
| 20040141165 | Zukavishvili et al. | Jul 2004 | A1 |
| 20050077483 | Bakker et al. | Apr 2005 | A1 |
| 20060011864 | Koshelev et al. | Jan 2006 | A1 |
| 20070273282 | Radkov et al. | Nov 2007 | A1 |
| Number | Date | Country | |
|---|---|---|---|
| 20070069159 A1 | Mar 2007 | US |
| Number | Date | Country | |
|---|---|---|---|
| 60719559 | Sep 2005 | US |
