Claims
- 1. An electrostatic chuck for attracting an object to be treated, comprising:
- a substrate;
- an insulating dielectric single layer comprising a ceramic material with a porosity level of not more than 3%; and
- at least one electrode being formed on and in contact with a top surface of said substrate and the insulating dielectric single layer being formed on and in contact with a top surface of said at least one electrode; wherein
- said object is attracted onto said at least one electrode via the insulating dielectric layer;
- said insulating dielectric single layer having an average thickness of 1 to 3 mm; and
- said insulating dielectric layer is a ceramic material selected from the group consisting of silicon nitride, aluminum nitride, boron nitride, sialon, silicon carbide and alumina-silicon nitride material, said electrostatic chuck having a leaked current value of 0.0017 to 0.0100 mA/cm.sup.2.
- 2. The electrostatic chuck set forth in claim 1, wherein each of said substrate and the insulating dielectric layer is comprised of a dense ceramic material, said at least one electrode is composed of a planar metallic bulky body, and the substrate, the insulating dielectric layer and at least one electrode are integrally sintered.
- 3. The electrostatic chuck set forth in claim 1, wherein a resistive heating element is buried in the substrate.
- 4. The electrostatic chuck set forth in claim 1, which further comprises a high frequency electric power source for feeding a high frequency electric power upon said at least one electrode so as to generate plasma upon said object.
- 5. An electrostatic chuck for attracting an object to be treated, comprising:
- a substrate,
- an insulating dielectric single layer having an average thickness of 1 to 3 mm,
- and at least one electrode provided on and in contact with a top surface of said substrate, and the insulating dielectric layer being provided on and in contact with a top surface of said at least one electrode, wherein
- said object to be treated is attracted onto said at least one electrode via the insulating dielectric single layer,
- a gas-introducing hole being provided at least in said insulating dielectric single layer while being opened to an attracting surface of said insulating dielectric single layer, further including
- at least one gas-diffusing depression being formed in said insulating dielectric single layer on a side of the attracting surface, and a depth of the gas-diffusing depression is not less than 100 .mu.m and not more than 5.0 mm, said electrostatic chuck having a leaked current value of 0.0017 to 0.0100 mA/cm.sup.2.
- 6. The electrostatic chuck set forth in claim 5, wherein said insulating dielectric layer is a material selected from the group consisting of silicon nitride, aluminum nitride, boron nitride, sialon, silicon carbide and alumina-silicon nitride material.
- 7. The electrostatic chuck set forth in claim 5, wherein said insulating dielectric single layer is comprised of a ceramic material with a porosity level of not more than 3%.
- 8. The electrostatic chuck set forth in claim 7 wherein said insulating dielectric layer is comprised of silicon nitride.
- 9. The electrostatic chuck set forth in claim 7, wherein said insulating dielectric layer is comprised of aluminum nitride.
- 10. The electrostatic chuck set forth in claim 5, wherein each of said substrate and said insulating dielectric single layer is comprised of a ceramic material with a porosity level of not more than 3%, said at least one electrode is composed of a planar metallic bulky body, and said substrate, said insulating dielectric single layer, and said at least one electrode are integrally sintered.
- 11. The electrostatic chuck set forth in claim 5, further comprising a resistive heating element buried in said substrate.
- 12. The electrostatic chuck set forth in claim 5, further comprising a high frequency electric power source for feeding a high frequency electric power upon said at least one electrode so as to generate plasma upon said object.
Priority Claims (2)
Number |
Date |
Country |
Kind |
7-229190 |
Sep 1995 |
JPX |
|
8-218259 |
Aug 1996 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/705,988 filed Aug. 30, 1996 now U.S. Pat. No. 5,946,183, Aug. 31, 1999.
US Referenced Citations (20)
Foreign Referenced Citations (6)
Number |
Date |
Country |
0 506 537 A1 |
Sep 1992 |
EPX |
0 601 788 A2 |
Jun 1994 |
EPX |
0 680 075 A1 |
May 1995 |
EPX |
0 693 774 A2 |
Jan 1996 |
EPX |
0 742 588 A2 |
Nov 1996 |
EPX |
2-160444 |
Jun 1990 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
705988 |
Aug 1996 |
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