The present invention relates generally to grazing-incidence collectors (GICs), and in particular to systems and methods of evaporative thermal management of GICs used in extreme ultraviolet (EUV) lithography.
EUV lithography is anticipated to be the lithographic process of choice for producing future generations of semiconductor devices having line widths on the order of 27 nm and smaller. The wavelength of the EUV radiation is nominally 13.5 nm, which calls for the use of specialized optics to collect and image the EUV radiation.
One type of EUV optical system used to collect the radiation from the light source is a grazing incidence collector (GIC). A GIC typically comprises one or more concentrically arranged GIC mirror shells configured to receive radiation from the EUV source at grazing incidence and reflect the received radiation in order to concentrate it at an intermediate focus such that the EUV radiation distribution in the far field is uniform to within a specification set by the overall system optical design.
The radiation sources being considered for EUV lithography include a discharge-produced plasma (DPP) and laser-produced plasma (LPP). The conversion efficiency of these sources is only a few percent so that most of the energy used to generate the EUV radiation is converted to infrared, visible, UV radiation and energetic particles that can be incident upon the one or more GIC mirror shells. This broadband radiation causes a substantial thermal load on the one or more GIC mirror shells.
Consequently, each GIC mirror shell therefore needs to be cooled so that the heat absorbed by the mirror does not substantially adversely affect GIC performance or damage the GIC. In particular, the cooling needs to be carried out under high power loading conditions while preventing distortion of the one or more GIC mirror shells. This is because the uniformity and stability of the illumination of the reflective reticle is a key aspect of quality control in EUV lithography. In particular, the intensity and angular distributions of the EUV radiation delivered by the GIC to the input aperture of the illuminator must not change significantly as the thermal load on the GIC is cycled. This requires a specified degree of radiation uniformity in the far field of the GIC radiation pattern, and this uniformity can be compromised by distortion or figure errors in the GIC mirror shells.
To date, essentially all GICs for EUV lithography have been used in the laboratory or for experimental “alpha” systems under very controlled conditions. As such, there has been little effort directed to GIC thermal management systems for GICs use in a commercially viable EUV lithography system. In fact, the increasing demand for higher EUV power in such commercial systems also increases the thermal load on the GIC. Consequently, more efficient and effective thermal management systems must be implemented for GICs for use in commercial EUV lithography systems to minimize the optical distortion due to the thermal load.
The disclosed systems for and methods of evaporative thermal management of GIC mirror systems allow cooling under high power loading conditions associated with actual commercial EUV lithography without requiring complex, high-volume plumbing of coolant to the GIC mirrors. The disclosed systems also allow for maintaining a substantially uniform temperature distribution over a large area optical surface, which serves to minimize thermal distortion of the optical surface.
A particular advantage of the evaporative approaches disclosed is that the cooling process is self-regulating; that is, areas of the optical structure that have higher power loading will tend to get warmer, thereby leading to a higher rate of evaporation and therefore a higher cooling rate.
An example evaporative cooling system includes forming a GIC mirror cooling assembly that defines a heat pipe on the outer surface of a GIC mirror shell. Operation of the heat pipe is initiated by heating the GIC mirror shell using broadband radiation emitted from an EUV radiation source. Alternatively, start-up of the heat pipe may be initiated by an external heater configured to initiate the evaporative cooling process even before the EUV radiation source is turned on. The applied heat causes a fluid coolant carried by wicking layers adjacent the heated surfaces to evaporate. The vapor is removed from the GIC mirror outer surface to a condenser system that condenses the vapor. The disclosed system can include a heat and erosion shield to protect the leading edge (closest to the EUV radiation source) of the GIC mirror system.
The heat-pipe configuration provides substantially uniform cooling of the GIC mirror shell over the entire GIC mirror shell while avoiding spatial modulations of the GIC mirror reflective surface that can occur when using networks of cooling lines in thermal contact with the GIC mirror shell. Moreover, the GIC evaporative thermal management systems and methods disclosed herein enable efficient cooling without the need for flowing large amounts of coolant at relatively high flow rates. Further, the evaporative thermal management systems and methods can be implemented in embodiments that add only a few millimeters of width to the GIC mirror shell. This results in a low-profile design that allows for a nested GIC mirror shell configuration with minimal obscuration of the optical pathways between the EUV radiation source and the intermediate focus.
It is to be understood that both the foregoing general description and the following detailed description present embodiments of the invention, and are intended to provide an overview or framework for understanding the nature and character of the invention as it is claimed. The accompanying drawings are included to provide a further understanding of the invention, and are incorporated into and constitute a part of this specification. The drawings illustrate various embodiments of the invention and together with the description serve to explain the principles and operations of the invention. The claims set forth below constitute part of the detailed description and are incorporated by reference herein into the specification.
The various elements depicted in the drawing are merely representational and are not necessarily drawn to scale. Certain sections thereof may be exaggerated, while others may be minimized. The drawing is intended to illustrate an example embodiment of the invention that can be understood and appropriately carried out by those of ordinary skill in the art. The orientation of the various elements are selected for ease of illustration and “up” and “down” in the drawings neither necessarily correspond to nor are aligned with the direction of gravity unless specifically indicated.
In the discussion below, the term “fluidly connected” and like terms apply to a fluid in both liquid and gaseous (vapor) form. In the Figures, the same or like elements and components are referred to with the same or like reference numbers where convenient.
SOCOMO 10 includes an EUV radiation source system 30 arranged along axis A1 adjacent GIC mirror system input end 22 and that generates an EUV radiation source 34 at a source focus SF. EUV radiation source 34 emits a ‘working band’ of EUV radiation 40 having a wavelength of nominally 13.5 nm as well as other out-of-band radiation. Example EUV radiation source systems 30 include laser-produced plasma (DPP) or a discharge-produced plasma (DPP) radiation source 34.
GIC mirror system 20 is configured to receive from EUV radiation source 34 working-band EUV radiation 40 and collect this EUV radiation at an intermediate focus IF adjacent output end 24 and along axis A1, where an intermediate source image 34′ is formed. When SOCOMO 10 is incorporated into an EUV lithography system, intermediate focus IF is located at or near an aperture stop AS for an EUV illuminator (see
Example GIC mirror assemblies 100 are disclosed in U.S. Patent Application Publication No. 2010/0284511, and in U.S. patent application Ser. No. 12/735,525 and Ser. No. 12/734,829, which are incorporated by reference herein. An example GIC mirror shell support member 120 is disclosed in U.S. patent application Ser. No. 12/657,650, which is incorporated by reference herein.
Jacket 160 and GIC mirror shell outer surface 118 define a chamber 180. In an example, the width W from GIC mirror shell inner surface 116 to jacket outer surface 168 (see
A wicking layer 200M is disposed in thermal contact with the GIC mirror shell outer surface 118 and end walls 115L and 115T. Also optionally included is a wicking layer 200J disposed in thermal contact with inner surface 166 of jacket 160. The combined jacket and mirror shell leading ends 115L and 165L define a leading end 170L of GIC mirror cooling assembly 150, and the combined jacket and mirror shell trailing ends 115T and 165T define a trailing end 170T of the GIC mirror cooling assembly. Leading end 170L is the end closest to EUV radiation source 34 and trailing end 170T is the end farthest from the EUV radiation source when the GIC mirror cooling assembly 150 is incorporated into SOCOMO 10.
In an example, wicking layers 200M and 200J are conformal to and in thermal contact with GIC mirror shell outer surface 118 and jacket inner surface 166. Also in an example, wicking layers 200M and 200J are disposed immediately adjacent GIC mirror shell outer surface 118 and jacket inner surface 166, respectively, i.e., without any intervening layers therebetween. In an example, wicking layers 200M and 200J have a thickness greater than 100 micron, and further in example have a thickness of between 100 micron and 2000 microns. Example materials for wicking layers 200M and 200J include foam structures made from a variety of materials such as vitreous carbon or copper or aluminum or even plastics; exemplary choices for this application would include nickel mesh, nickel powder and nickel foam. In an example, wicking layers 200M and 200J can extend to cover and provide evaporative cooling for respective GIC mirror shell end walls 115 and jacket end walls 165.
In an example, at least one of wicking layers 200M and 200J comprises a wicking material selected from the group of wicking materials comprising: metal foam, vitreous foam, reticulated plastic, reticulated polymer, woven plastic and woven polymer.
Also shown in
With reference again to
GIC mirror system 20 includes three main regions: an evaporation region 175E defined mainly by GIC mirror cooling assembly 150, a condensation region 175C defined by condenser system 250, and an adiabatic region 175A defined by a connector conduit 242 that connects the GIC mirror cooling assembly to the condenser unit. This configuration generally defines a heat pipe
Connection conduit 242 serves to fluidly connect transport conduit 240 to condenser system 250 and in an example defines an adiabatic region 175A for GIC mirror system 20.
In a commercial EUV lithography system, the total collector shell system (multiple shells) is expected to be subjected to 40 kW to 60 KW, which represents a large thermal load for this type of application. The thermal management of each GIC mirror shell 110 must be implemented within the constraints of the optical design of the particular GIC mirror system.
In particular, in GIC mirror systems 20 having multiple GIC mirror shells 110, the GIC mirror shells are arranged in a nested and concentric (or substantially concentric) configuration (see e.g.,
In other examples such as illustrated in
For example, with reference to
It is noted that the cooling of spider 120 is generally accomplished via conventional cooling because the power loading on the spider is anticipated to be significantly less than the power loading on the GIC mirror cooling assembly 150. In this regard, the cooled spider 120 is not part of the evaporative cooling circuit. However, spider 120 may serve as a support structure to facilitate the flow of cooling fluid 172 between the GIC mirror assemblies 150 and condenser system 250.
In the general method of operation of thermally managed GIC mirror system 20, EUV radiation source 34 generates EUV radiation 40 (along with out-of-band radiation, not shown), which is incident upon reflective inner surface 116 of GIC mirror shell 110. GIC mirror shell 110 receives, collects and focuses this radiation 40 at intermediate focus IF (see
As EUV radiation 40 (along with out-of-band radiation, not shown) heats leading end 170L, the rate of evaporation of liquid 172 in wicking layers 200M and 200J in evaporation region 175E increases. The resulting vapor 174 collects in chamber 180 closest to leading end 170L, causing a pressure differential relative to the trailing end 170T of the chamber 180. This pressure differential causes the flow of vapor 174 from evaporation region 175E through adiabatic region 175A and to condenser region 175C.
The vapor 174 reaches condenser system 250 and is condensed by the action of heat exchanger 254 to form fluid 172 in reservoir 252. Meanwhile, the cooling fluid 172 that evaporates from wicking layers 200M and 200J in evaporation region 175E is replaced by capillary action. Cooling fluid 172 is continuously fed to wicking layers 200M and 200J by reservoir 252, thereby supporting the continuous capillary flow of cooling fluid in the wicking layers in the evaporation region 175E. This in turn serves to maintain the continuous and self-sustaining evaporation and condensing cycle of the heat pipe.
Wicking layers 200M and 200J cause the heat from GIC mirror shell 110 to be absorbed by cooling fluid 172 whereby the heat ultimately converts the cooling fluid to vapor 174. The flow of vapor 174 out of chamber 180 at or near trailing end 170T via vapor conduit 240V serves to remove the vapor from GIC mirror shell assembly 150. The heat stored in vapor 174 is then released when the vapor is condensed to liquid by condenser system 250. Heat exchanger 254 serves to remove the released heat that collects in reservoir 252. Thus, the heat from GIC mirror shell 110 is locally stored in vapor 174, and this stored heat is transported via the vapor to a location remote from the GIC mirror shell where the heat can safely be released and carried away from the system 20.
As discussed above, the flow of cooling fluid 172 to feed wicking layers 200M and 200J provides for substantially uniform heat removal via evaporation in the evaporation section 175E. Likewise, the flow of vapor 174 out of chamber 180 provides for substantially uniform vapor removal (and thus heat removal) from the chamber.
Startup of the evaporative thermal management process as described above may occur due to heating from radiation 40 onto the GIC mirror assembly 100 from the EUV radiation source 34 or it may be ‘pre-started’ via an exogenous heat source 34E (see
GIC mirror system 20 preferably operates at a steady state that does not encroach too closely on any of the well-known limits of operation of heat pipes, such as the sonic limit, the capillary pressure limit, the entrainment limit and the boiling limit. The sonic limit is reached when the flow of vapor 174 velocity at the exit of the evaporation region 175E approaches the sound velocity. At the sound velocity, the vapor flow will be limited and therefore the cooling rate will be limited. Simulations indicate that the coolant vapor 174 (e.g., water as coolant) and vapor temperature and density can be controlled to provide cooling rates sufficient for this particular EUV GIC mirror assembly application.
The capillary pressure limit is reached when the flow of cooling fluid 172 to the warmest regions of chamber 180 is insufficient to maintain the wetting of wicking layers 200M and 200J. This can lead to one or both of wicking layers 200M and 200J drying out. Simulations indicate (see quantitative example below) that the cooling fluid viscosity, wick permeability and wick geometry can be controlled to provide cooling rates sufficient for this EUV GIC mirror assembly application.
In addition, capillary flow can be aided by providing a gravitational assist by locating reservoir 252 of the condenser region 175C at an elevation above the evaporation region 175E and adiabatic region 175A, as illustrated by way of example in
In the standard operation of a heat pipe system, there is simultaneous counter-flow of liquid and vapor, namely that of the cooling fluid 172 and attendant cooling-liquid vapor 174. Viscous shear forces occur at the interface of the counter-streaming cooling fluid 172 and vapor 174. Care must be taken to ensure that the viscous shear forces do not exceed the capillary surface tension forces driving cooling fluid 172 through wicking layers 200M and 200J. The entrainment limit is when the viscous shear forces equal the capillary surface tension forces. Simulations indicate that through appropriate choice of cooling fluid (e.g. water), wick architecture and vapor channel size, the cooling rates can be achieved well below the entrainment limit and meet the requirements for this EUV GIC mirror assembly application. This is discussed in the example set forth below.
If the local temperature in the wicking layers 200M and 200J were allowed to get too high and the local pressure too low, it could lead to the formation of macroscopic vapor bubbles and reach the boiling limit (also called the bubble formation or effervescence limit). This would inhibit the flow of cooling fluid 172 through the wicking layers 200M and 200J and the wicking layers could dry out. Simulations indicate that the cooling fluid (e.g., water) viscosity, wicking layer permeability and wick geometry can be controlled to avoid the boiling limit and provide cooling rates sufficient for this EUV GIC mirror assembly application.
In an example embodiment, jacket 160 is formed as a separate part from GIC mirror shell 110 and so needs to be interfaced with GIC mirror shell 110. The resulting chamber 180 needs to be sealed and be vacuum-compatible, and conform to restrictive EUV lithography non-contamination requirements.
One method for interfacing jacket 160 and GIC mirror shell 110 is via welding or even laser brazing, e.g., to form a welded or brazed joint. With reference to the close-up end view of
In one example, the flanges 117L and 167L are welded at their edges while in another example the flanges are overlapped and welded (
A consideration in forming GIC mirror cooling assembly 150 is that stress can be introduced into the assembly that can deform GIC mirror shell 110, thereby compromising the optical figure of reflective inner surface 116. Thus, with reference to the close-up view of GIC cooling assemblies of
GIC Mirror Cooling Assembly with Heat Shield
The plot of
Rather than trying to manage this intense leading edge thermal load using only the evaporative thermal management systems and methods described herein, in an example embodiment, an additional heat shield is employed.
In
In an example, thermal shield 350 in
Cooling ring 370 is preferably stood off from the leading end 170L of the GIC cooling assembly 150. The stand-off may be accomplished using stand-off elements such as a few attachment clips 374 attached to GIC cooling assembly 150. Alternatively, another stand-off structure (not shown) may be used that makes cooling ring 370 free-standing relative to the GIC cooling assembly.
Thermal shield 350 may also serve the additional function of mitigating erosion of GIC mirror shell reflective surface 116, which in an example includes a gold separation layer covered with a ruthenium reflective layer.
The heat pipe evaporative mechanism employed in the systems and methods disclosed herein is substantially self-healing. That is, achievement of wetting symmetry in the wicking layers will naturally be driven by the capillary forces in the wicking layer. If one region is hotter than another, it will have greater evaporation and thus the capillary action in the wicking layer will be stronger, thereby providing more cooling fluid 172 to evaporating region 175E. Similarly, any non-uniformity in the evaporation rate will build an over-pressure to move the vapor out of that region. Therefore, the architectural uniformity requirements in the evaporative cooling system are not as stringent as in a conventional water cooling configuration.
EUV Lithography System with Thermally Managed GIC SOCOMO
System 400 includes a system axis ASX and EUV radiation source 34, such as a hot plasma source, that emits working EUV radiation 40 at λ=13.5 nm. EUV radiation 40 is generated, for example, by an electrical discharge source (e.g., a discharged produced plasma, or DPP source), or by a laser beam (laser-produced plasma, or LPP source) on a target of Xenon or Tin. EUV radiation 40 emitted from such a LPP source may be roughly isotropic and, in current DPP sources, is limited by the discharge electrodes to a source emission angle of about θ=60° or more from optical axis ASX. It is noted that the isotropy of the LPP source will depend on the type of LPP target, e.g., Sn droplets (low mass or high mass), Sn disc, Sn vapor, etc.
System 400 includes a cooled EUV GIC mirror system 20 such as described above. Cooled EUV GIC mirror system 20 is arranged adjacent and downstream of EUV radiation source 34, with collector axis AC lying along system axis AS. The GIC mirror assembly 100 of EUV GIC mirror system 20 collects EUV radiation 40 from EUV radiation source 34, and the collected radiation is directed to intermediate focus IF where it forms an intermediate source image 34′.
An illumination system 416 with an input end 417 and an output end 418 is arranged along system axis AS and adjacent and downstream of EUV GIC mirror system 20, with the input end adjacent the EUV GIC mirror system. Illumination system 416 receives at input end 417 EUV radiation 40 from source image 34′ and outputs at output end 418 a substantially uniform EUV radiation beam 420 (i.e., condensed EUV radiation). Where system 400 is a scanning type system, EUV radiation beam 420 is typically formed as a substantially uniform line of EUV radiation at reflective reticle 436 that scans over the reticle.
A projection optical system 426 is arranged along (folded) system axis AS downstream of illumination system 416. Projection optical system 426 has an input end 427 facing illumination system output end 418, and an opposite output end 428. A reflective reticle 436 is arranged adjacent the projection optical system input end 427 and a semiconductor wafer 440 is arranged adjacent projection optical system output end 428. Reticle 436 includes a pattern (not shown) to be transferred to wafer 440, which includes a photosensitive coating (e.g., photoresist layer) 442.
In operation, the uniformized EUV radiation beam 420 irradiates reticle 436 and reflects therefrom, and the pattern thereon is imaged onto photosensitive surface 442 of wafer 440 by projection optical system 426. In a scanning system 400, the reticle image scans over the photosensitive surface 442 to form the pattern over the exposure field. Scanning is typically achieved by moving reticle 436 and wafer 440 in synchrony.
Once the reticle pattern is imaged and recorded on wafer 440, the patterned wafer 440 is then processed using standard photolithographic and semiconductor processing techniques to form integrated circuit (IC) chips.
Note that in general the components of system 400 are shown lying along a common folded axis AS in
In
In GIC mirror cooling assembly 150, GIC mirror assembly 100 defines evaporation region 175E. It is assumed that wicks 240M and 240J have a thickness of 1 mm and the width of the vapor channel 240V in chamber 180 is 3 mm. The assumed material for wicks 240M and 240J is Ni foam having a pore radius of 230 microns and a permeability of 3.8×10−9 m2. The length of the GIC mirror assembly 100 is LE=0.2 m and its diameter is DE=0.4 m.
Adiabatic region 175A is defined by (adiabatic) transport conduit 240 having a vapor channel 240V of 10 mm radius surrounded by wicking layers 240M and 240J of 2 mm thickness and 0.5 mm walls, for a total diameter of DA=25 mm. The length LA of transport conduit 240 is left as a variable. The configuration of GIC mirror cooling assembly 150 is considered to be similar to that shown in
The operating temperature of a heat pipe is limited by the phase change temperature (boiling temperature) of cooling fluid 172, i.e., the temperature at which the coolant changes phase from liquid to vapor. In particular, for a given vapor pressure, the temperature of cooling fluid 172 at the surface of wick 240M or 240J cannot exceed the phase change temperature. Consequently, the ambient vapor pressure of cooling fluid 172 is used to set the operating temperature.
In the present example, it is assumed that cooling fluid 172 is water (e.g., distilled water) so that the cooling vapor 174 is water vapor. Then if the operating temperature (i.e., the phase change temperature) is 40° C. (313° K), the pressure within GIC mirror cooling assembly 150 should be reduced to 0.93 bar (9.3×104 Pa). In this example, it is assumed that 5 kW of heat is absorbed by mirror surface 116 so that the average heat flux is approximately 2 W/cm2. It is noted, however that a point-like EUV source 34 produces a non-uniform illumination mirror surface 116, resulting in larger thermal load on the portion of the mirror surface closest to the EUV source. Accordingly, an axially linear gradient of the thermal load from the leading to trailing edge of the mirror surface 116 is assumed, so that the maximum heat flux could be as high as 4 W/cm2.
The mass flow within GIC mirror cooling assembly 150 is determined by the vaporization rate. This is the amount of cooling fluid 172 converted to cooling vapor 174 due to heat absorption. The cooling fluid flow rate FL is given by,
Here ψ=5 kW is the absorbed power, h is the latent heat of vaporization and ρL is the water density. Using h=2.36×106 J/kg and ρL=10−3 kg/ml, the flow rate FL=2.1 ml/s, which corresponds to a mass flow rate of 2.1×10−3 kg/s. The density of the water vapor is given by the ideal gas equation,
Here P=9.3×104 Pa is the gas pressure, W=0.018 kg/mole is the molecular weight, R=8.314 J/mole-K and T=313 K is the temperature. The resulting density of the water vapor is ρV=0.64 kg/m3. For a mass flow rate of 2.1×10−3 kg/s, the vapor flow rate is FV=3.3×10−3 m3/s.
The cross-sectional area AV of the vapor channel 240V associated with chamber 180 in GIC mirror assembly 100 is 3.8×10−3 m2 and is 3.1×10−4 m2 in the adiabatic conduit 240. The corresponding flow velocities V for cooling vapor 174 are 0.87 and 10.6 m/s in chamber 180 and transport conduit 240, respectively.
The Reynolds number is defined as,
where DH is the hydraulic diameter (DH=6 mm for GIC mirror assembly 100 and 20 mm for the transport conduit) and vv=2×10−5 m2/s is the kinematic viscosity of the vapor. Inserting these values into Eq. (3) one obtains Reynolds numbers of 260 for GIC mirror assembly 100 and 10600 for transport conduit 240. This indicates that the vapor flow is laminar in GIC mirror assembly 100 and turbulent transport conduit 240.
There are four key limits that must be observed to maintain uninterrupted flow of the coolant fluid 172 and coolant vapor 174. These are called the capillary, sonic, entrainment, and boiling limits. These limits are now explored in detail in connection with the present example.
The example configuration for GIC mirror cooling assembly 150 is such that the flow of cooling fluid is gravity assisted. This is accomplished, as explained above, by arranging the condenser region 175C so that it is located above the adiabatic region 175A, and locating the adiabatic region above the evaporator region 175E. This allows for combination of capillary pressure and gravitational force in the wicking layers 240M and 240J to drives the flow of cooling fluid 172. In this gravitation-assist configuration, it is necessary that the sum of the capillary and gravitational pressures be greater than the sum of the counter pressures produced by the viscous flow of both cooling fluid 172 and cooling vapor 174.
The capillary pressure is given by:
Here σ=6.6×10−2 N/m is the surface tension at the liquid-vapor interface, θ=20 deg where θ is the contact angle between the water and the wicking material surface, and rC=230·m is the pore radius of the Ni foam wick.
The pressure due to the gravitational force on the liquid is:
ΔPG=ρLgL sin α (5)
Here g is the gravitational acceleration of 9.8 m/s2 and α is the local angle of inclination (in the adiabatic region and/or in the evaporator) as measured from the horizontal.
The back pressure due to the viscous flow of cooling fluid 172 in the wick is given by Darcy's law:
Here μ=10−3 N−s/m2 is the dynamic viscosity of water and K=3.8×10−9 m2 is the permeability of the Ni foam wick. Aw is the cross-sectional area of the wick (Aw=1.25×10−3 m2 in the evaporator and 1.38×10−4 m2 in the adiabatic conduit).
The back pressure due to the viscous drag of the heat pipe walls on the vapor flow can be written as,
Here f is the friction coefficient for the vapor at the wick interface. A typical value for a foam wick at large Reynolds number is f=2.
The pressures for GIC mirror assembly 100 and the transport conduit 240 are calculated using Equations (4) through (7), and the results are listed in Table 1, below. In Table 1, contributions to the differential pressure are calculated based on the GIC mirror assembly 100 arranged at an angle α of 60 degrees relative to the horizontal, and the adiabatic transport conduit 240 length L and inclination angle α are left to be determined in Table 1. Note that the appropriate parameter units are listed in the parameter column in Table 1.
The sum of the four pressure drops listed in Table I must be greater than zero to satisfy the capillary limit. It can be seen that this condition is easily met in GIC mirror assembly 100. In transport conduit 240, however, the following capillary limit condition must be satisfied:
540+9800 L sin α−4000L−3600L>0 (8)
It is evident that for any practical length L, transport conduit 240 preferably has some tilt, that is, some gravity assistance. The condition set forth in Equation (8) defines a region CL in the {L, α} parameter space shown the plot of
The sonic limit is defined where the flow velocity of the cooling vapor 174 reaches the speed of sound, and is given by:
V
sonic
=√{square root over (γRT)} (9)
Here γ=1.3 is the ratio of the specific heats of constant pressure and volume. For the present example, a sonic limit of Vsonic=58 m/s is obtained, which is much greater than the vapor flow velocities of V=0.87 m/s in GIC mirror assembly 100 and 10.6 m/s in transport conduit 240. Hence the GIC mirror cooling assembly 150 of this example satisfies the sonic limit.
The entrainment limit is defined as the point at which the viscous shear forces due to the flow of cooling vapor 174 impede the flow of cooling liquid 172 in the wicks 240M and 240J. This occurs when the dynamic pressure in the vapor exceeds the capillary pressure in the wick. Recall that the capillary pressure is 540 Pa.
The dynamic pressure in the vapor is given by:
P
dynamic=½ρvV2 (10)
The dynamic pressures in our example are 0.24 Pa in the evaporator and 36 Pa in the adiabatic conduit. Since these values are very small compared to the capillary pressure we conclude that the operation of the heat pipe is well below the entrainment limit.
The boiling limit occurs when the vaporization rate of the cooling fluid 172 exceeds the diffusion rate of the cooling vapor 174 out of wicks 240M and 240J. In this case gas bubbles are nucleated and grow in the wick, impeding the flow of cooling fluid 172. The conditions for boiling depend on the detailed structure of the wick material and its interaction with cooling fluid 172. In general, however, it has been observed that boiling does not occur for heat fluxes less than 10 W/cm2. It is estimated that GIC mirror assembly 100 will experience a maximum heat flux of ˜4 W/cm2 in a commercial EUV lithography setting, which is anticipated to be safely below the boiling limit.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention. Thus it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
This application claims the benefit of priority under 35 U.S.C. §119(e) of U.S. Provisional Patent Application Ser. No. 61/518,378, filed on May 4, 2011, which application is incorporated by reference herein.
Number | Date | Country | |
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61518378 | May 2011 | US |