Claims
- 1. A transferring method, comprising:
providing a substrate; depositing a separation layer over the substrate; forming a transferred layer over the substrate; joining a transfer member to the transferred layer; and removing the transferred layer from the substrate; transferring the transferred layer to the transfer member; removing a remainder of the separation layer from the substrate; and reusing the substrate for another transfer.
- 2. The transferring method according to claim 1, exfoliation being caused at at least one of the separation layer and an interface between the separation layer and the substrate, the transferred layer being removed from the substrate.
- 3. The transferring method according to claim 2, the separation layer being irradiated with light to cause the exfoliation.
- 4. The transferring method according to claim 2, further comprising forming an adhesive layer over the transferred layer, the adhesive layer joining the transferred layer to the transfer member.
- 5. The transferring method according to claim 4, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.
- 6. The transferring method according to claim 5, the substrate having transparency, and being illuminated from the substrate side to harden the adhesive.
- 7. The transferring method according to claim 4, the transfer member having transparency, and being illuminated through the transfer member to harden the adhesive.
- 8. The transferring method according to claim 1, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.
- 9. A method of manufacturing an active matrix substrate, comprising:
depositing a separation layer over the substrate; forming a transferred layer, including a plurality of thin film transistors, above the substrate; removing the transferred layer from the substrate; transferring the transferred layer to the transfer member; removing a remainder of the separation layer from the substrate; and reusing the substrate for another transfer.
- 10. The method for manufacturing an active matrix substrate according to claim 9, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which having a thin-film transistor from the plurality of thin film transistors.
- 11. A transferring method, comprising:
providing a substrate; forming a transferred layer over the substrate; joining a transfer member to the transferred layer; removing the transferred layer from the substrate; transferring the transferred layer to the transfer member; and the steps of joining the transfer member, removing the transferred layer and transferring the transferred layer constituting a transfer process, the transfer process being repeatedly performed such that a position of a front face and a rear face of the transferred layer formed by the last transfer process are the same as those of the transferred layer formed, on the substrate.
- 12. The transferring method according to claim 11, further comprising:
depositing a separation layer over the substrate, exfoliation being caused at at least one of the separation layer and an interface between the separation layer and the substrate, the transferred layer being removed from the substrate.
- 13. The transferring method according to claim 11, the separation layer being irradiated with light to cause the exfoliation.
- 14. The transferring method according to claim 11, the transfer process being repeatedly performed for an even number of times.
- 15. The transferring method according to claim 11, further comprising forming an adhesive layer over the transferred layer, the adhesive layer joining the transferred layer to the transfer member.
- 16. The transferring method according to claim 15, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.
- 17. The transferring method according to claim 16, the substrate having transparency, and being illuminated from the substrate side to harden the adhesive.
- 18. The transferring method according to claim 15, the transfer member having transparency, and being illuminated through the transfer member to harden the adhesive.
- 19. The transferring method according to claim 11, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.
- 20. A method for manufacturing an active matrix substrate, comprising:
forming a separation layer over the substrate; forming a transferred layer, including a plurality of thin film transistors, above the substrate; joining a transfer member to the transferred layer; removing the transferred layer from the substrate; transferring the transferred layer to the transfer member; and the steps of joining the transfer member, removing the transferred layer and transferring the transferred layer constituting a transfer process, the transfer process being repeatedly performed such that a position of a front face and a rear face of the transferred layer formed by the last transfer process are the same as those of the transferred layer formed on the substrate.
- 21. The method for manufacturing an active matrix substrate according to claim 20, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which has a thin-film transistor from the plurality of thin film transistors.
Priority Claims (6)
Number |
Date |
Country |
Kind |
8-225643 |
Aug 1997 |
JP |
|
8-315590 |
Nov 1996 |
JP |
|
8-300373 |
Nov 1996 |
JP |
|
8-300371 |
Nov 1996 |
JP |
|
9-193082 |
Jul 1997 |
JP |
|
9-193081 |
Jul 1997 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a Division of application Ser. No. 10/420,840 filed Apr. 23, 2003, which in turn claims the benefit of U.S. application Ser. No. 10/091,562 filed Mar. 7, 2002, which in turn claims the benefit of U.S. patent application Ser. No. 09/051,966 filed Apr. 24, 1998, which is a continuation of National Stage of PCT/JP97/02972 filed Aug. 26, 1997. The entire disclosures of the prior applications are hereby incorporated by reference herein in their entirety.
Continuations (3)
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Number |
Date |
Country |
Parent |
10420840 |
Apr 2003 |
US |
Child |
10851202 |
May 2004 |
US |
Parent |
10091562 |
Mar 2002 |
US |
Child |
10420840 |
Apr 2003 |
US |
Parent |
09051966 |
Apr 1998 |
US |
Child |
10091562 |
Mar 2002 |
US |