Claims
- 1. A transferring method, comprising:providing a substrate wherein the substrate is transparent; forming a separation layer over the substrate; forming a transferred layer over the separation layer; irradiating the separation layer with light through the substrate where the transferred layer is formed to cause exfoliation; and causing exfoliation at at least one of the separation layer and an interface between the separation layer and the substrate; and partly cleaving the separation layer such that a part of the transferred layer is removed from the substrate and transferred to a transfer member in a given pattern.
- 2. The transferring method, according to claim 1, the separation layer being partly irradiated with light to cause the exfoliation.
- 3. The transferring method, according to claim 2, the light being irradiated through a mask.
- 4. The transferring method, according to claim 2, a position for the irradiation being controlled.
- 5. The transferring method of claim 1, the separation layer being repeatedly transferred to the transfer member.
- 6. The transferring method of claim 5, the transfer member being larger than the substrate.
- 7. The transferring method of claim 5, the transferred layer being transferred side by side in the repeating cycle.
- 8. The transferring method according to claim 1, further comprising forming an adhesive layer over the transferred layer, the adhesive layer joining the transferred layer to the transfer member.
- 9. The transferring method according to claim 8, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.
- 10. The transferring method according to claim 9, the substrate having transparency, and being illuminated from the substrate side to harden the adhesive.
- 11. The transferring method according to claim 9, the transfer member having transparency, and being illuminated from the transfer member to harden the adhesive.
- 12. The transferring method according to claim 1, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.
- 13. A method for manufacturing an active matrix substrate, comprising:providing a substrate wherein the substrate is transparent; forming a separation layer over the substrate; forming a transferred layer including a plurality of thin film transistors, above the separation layer; irradiating the separation layer with light through the substrate where the transferred layer is formed to cause exfoliation; and causing exfoliation at at least one of the separation layer and an interface between the separation layer and the substrate; partly cleaving the separation layer such that a part of the transferred layer is removed from the substrate and is transferred to a transfer member in a given pattern.
- 14. The transferring method of claim 13, the transfer member being larger than the substrate.
- 15. The method of manufacturing an active matrix substrate according to claim 13, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which has the transistor.
Priority Claims (6)
Number |
Date |
Country |
Kind |
8-225643 |
Aug 1996 |
JP |
|
8-300371 |
Nov 1996 |
JP |
|
8-300373 |
Nov 1996 |
JP |
|
8-315590 |
Nov 1996 |
JP |
|
9-193081 |
Jul 1997 |
JP |
|
9-193082 |
Jul 1997 |
JP |
|
Parent Case Info
This application is a divisional application of Ser. No. 10/091,562, filed Mar. 7, 2002, now U.S. Pat. No. 6,645,830, which is a continuation of Ser. No. 09/051,966 filed Apr. 24, 1998, now U.S. Pat. No. 6,372,608, which is a continuation of PCT/JP97/02972 filed Aug. 26, 1997.
US Referenced Citations (8)
Foreign Referenced Citations (6)
Number |
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Country |
0 658 929 |
Dec 1994 |
EP |
0 665 588 |
Jan 1995 |
EP |
02-090624 |
Mar 1990 |
JP |
A-6-291291 |
Oct 1994 |
JP |
08-152512 |
Jun 1996 |
JP |
A-8-288522 |
Nov 1996 |
JP |
Non-Patent Literature Citations (4)
Entry |
Sameshima, T. “Laser Beam Application to Thin Film Transistors,” Applied Surface Science 96-98, (1996), pp. 352-358. |
Brannon, Excimer Lasers Continue to Revolutionize the Processing of Microelectronic Materials, (IEEE), pp. 19-24 (1990). |
Brannon, Excimer laser Ablation and Etching, (IEEE), pp. 11-18 (Mar. 1997). |
Sumiiyoshi et al., Device Layer Transferred Poly-Si TFT Array for High Resolution LC Projector, (IEEE) pp. 165-168 (1989). |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/051966 |
|
US |
Child |
10/091562 |
|
US |