Claims
- 1. A transferring method, comprising:forming a separation layer over the substrate; forming an interlayer over the separation layer; forming a transferred layer on the interlayer; joining a transfer member to the transferred layer; and causing exfoliation at at least one of the separation layer and an interface between the separation layer and the substrate, the transferred layer being transferred to the transfer member.
- 2. The transferring method according to claim 1, the interlayer comprising a material selected from the group consisting of a silicon oxide, a metal and alloy including at least one of Pt, Au, W, Ta, Mo, Al, Cr and Ti.
- 3. The transferring method according to claim 2, separation layer including an amorphous silicon, and the interlayer including a silicon oxide.
- 4. The transferring method according to claim 2, the transferred layer including PZT, and the interlayer including a metal.
- 5. The transferring method according to claim 4, the interlayer including a metal selected from the group consisting of Pt, Au, W, Ta, Mo, Al, Cr, Ti and an alloy thereof.
- 6. The transferring method according to claim 1, the interlayer being at least one of a protective layer chemically or physically protecting the transferred layer, an insulating layer, a conductive layer, shading layer, a barrier layer prohibiting migration of components to or from the transferred layer and a reflection layer.
- 7. The transferring method according to claim 1, the thickness of the interlayer being between 10 nm and 5 μm.
- 8. The transferring method according to claim 1, further comprising forming an adhesive layer over the transferred layer to join the transferred layer with the transfer member.
- 9. The transferring method according to claim 8, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.
- 10. The transferring method according to claim 8, the substrate having transparency, and being illuminated from the substrate side to harden the adhesive.
- 11. The transferring method according to claim 8, the transfer member having transparency, and being illuminated from the transfer member to harden the adhesive.
- 12. The transferring method according to claim 1, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.
- 13. The transferring method according to claim 1, further comprising depositing a silicon layer on the interlayer to form a thin film transistor.
- 14. A method for manufacturing an active matrix substrate, comprising:forming a separation layer over the substrate; forming an interlayer over the separation layer; forming a transferred layer including a plurality of thin film transistors on the interlayer; joining a transfer member, which is supposed to be the active matrix substrate, to the a transferred layer; and causing exfoliation at at least one of the separation layer and an interface between the separation layer and the substrate, such that the thin film transistors are transferred to the transfer member.
- 15. The method for manufacturing an active matrix substrate according to claim 14, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which having the transistor.
Priority Claims (6)
Number |
Date |
Country |
Kind |
8-225643 |
Aug 1996 |
JP |
|
8-300371 |
Nov 1996 |
JP |
|
8-300373 |
Nov 1996 |
JP |
|
8-315590 |
Nov 1996 |
JP |
|
9-193081 |
Jul 1997 |
JP |
|
9-193082 |
Jul 1997 |
JP |
|
Parent Case Info
This is a Continuation of application Ser. No. 09/051,966 filed Apr. 24, 1998, which is a 371 of PCT/JP97/02972, filed Aug. 26, 1997.
US Referenced Citations (6)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0 658 929 |
Dec 1994 |
EP |
0 665 588 |
Jan 1995 |
EP |
6-291291 |
Oct 1994 |
JP |
8-288522 |
Nov 1996 |
JP |
Non-Patent Literature Citations (4)
Entry |
Sameshima, T. “Laser Beam Application to Thin Film Transistors,” Applied Surface Science 96-98, (1996), pp. 352-358. |
Brannon, Excimer Lasers Continue to Revolutionize the Processing of Microelectronic Materials, (IEEE), pp. 19-24 (1990). |
Brannon, Excimer laser Ablation and Etching, (IEEE), pp. 11-18 (Mar. 1997_. |
Sumiiyoshi et al., Device Layer Transferred Poly-Si TFT Array for High Resolution LC Projector, (IEEE) pp. 165-168 (1989). |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/051966 |
|
US |
Child |
10/091562 |
|
US |