Claims
- 1. A method of manufacturing a semiconductor device having a SOI structure, comprising:
forming an insulating film on a conducive material; forming a contact hole in the insulating film to expose the conductive material at a bottom thereof; forming a wiring material in electrical contact with the conductive material at least at the bottom of the contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group on the wiring material; and fluidizing at least the wiring material by a heat treatment at a temperature of 400° C. or lower.
- 2. A method of manufacturing a semiconductor device according to claim 1, wherein the SOI structure comprises a single crystal silicon.
- 3. A method of manufacturing a semiconductor device according to claim 1, wherein the conductive material comprises at least one of aluminum and a conductive semiconductor material.
- 4. A method of manufacturing a semiconductor device according to claim 1, wherein the wiring material comprises aluminum.
- 5. A method of manufacturing a semiconductor device according to claim 1, wherein the 12 through 15 group element comprises at least one selected from the group consisting of Ge, Sn, Ga, Pb, Zn, In, and Sb.
- 6. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is an EL display device.
- 7. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a mobile computer, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.
- 8. A method of manufacturing a semiconductor device having a SOI structure, comprising:
forming an insulating film on a conducive material comprising a silicide material; forming a contact hole in the insulating film to expose the conductive material at a bottom thereof; forming a wiring material in electrical contact with the conductive material at least at the bottom of the contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group on the wiring material; and fluidizing at least the wiring material by a heat treatment.
- 9. A method of manufacturing a semiconductor device according to claim 8, wherein the SOI structure comprises a single crystal silicon.
- 10. A method of manufacturing a semiconductor device according to claim 8, wherein the conductive material comprises at least one of aluminum and a conductive semiconductor material.
- 11. A method of manufacturing a semiconductor device according to claim 8, wherein the silicide material comprises at least one selected from the group consisting of tantalum silicide, tungsten silicide and titanium silicide.
- 12. A method of manufacturing a semiconductor device according to claim 8, wherein the wiring material comprises aluminum.
- 13. A method of manufacturing a semiconductor device according to claim 8, wherein the 12 through 15 group element comprises at least one selected from the group consisting of Ge, Sn, Ga, Pb, Zn, In, and Sb.
- 14. A method of manufacturing a semiconductor device according to claim 8, wherein the semiconductor device is an EL display device.
- 15. A method of manufacturing a semiconductor device according to claim 8, wherein the semiconductor device is at least one selected from the group consisting of a mobile computer, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.
- 16. A method of manufacturing a semiconductor device having a SOI structure comprising a CMOS circuit, comprising:
forming an insulating film on a conducive material; forming a contact hole in the insulating film to expose the conductive material at a bottom thereof; forming a wiring material in electrical contact with the conductive material at least at the bottom of the contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group on the wiring material; and fluidizing at least the wiring material by a heat treatment at a temperature of 400° C. or lower.
- 17. A method of manufacturing a semiconductor device according to claim 16, wherein the SOI structure comprises a single crystal silicon.
- 18. A method of manufacturing a semiconductor device according to claim 16, wherein the conductive material comprises at least one of aluminum and a conductive semiconductor material.
- 19. A method of manufacturing a semiconductor device according to claim 16, wherein the wiring material comprises aluminum.
- 20. A method of manufacturing a semiconductor device according to claim 16, wherein the 12 through 15 group element comprises at least one selected from the group consisting of Ge, Sn, Ga, Pb, Zn, In, and Sb.
- 21. A method of manufacturing a semiconductor device according to claim 16, wherein the semiconductor device is an EL display device.
- 22. A method of manufacturing a semiconductor device according to claim 16, wherein the semiconductor device is at least one selected from the group consisting of a mobile computer, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.
- 23. A method of manufacturing a semiconductor device having a SOI structure comprising a CMOS circuit, comprising:
forming an insulating film on a conducive material comprising a silicide material; forming a contact hole in the insulating film to expose the conductive material at a bottom thereof; forming a wiring material in electrical contact with the conductive material at least at the bottom of the contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group on the wiring material; and fluidizing at least the wiring material by a heat treatment.
- 24. A method of manufacturing a semiconductor device according to claim 23, wherein the SOI structure comprises a single crystal silicon.
- 25. A method of manufacturing a semiconductor device according to claim 23, wherein the conductive material comprises at least one of aluminum and a conductive semiconductor material.
- 26. A method of manufacturing a semiconductor device according to claim 23, wherein the silicide material comprises at least one selected from the group consisting of tantalum silicide, tungsten silicide and titanium silicide.
- 27. A method of manufacturing a semiconductor device according to claim 23, wherein the wiring material comprises aluminum.
- 28. A method of manufacturing a semiconductor device according to claim 23, wherein the 12 through 15 group element comprises at least one selected from the group consisting of Ge, Sn, Ga, Pb, Zn, In, and Sb.
- 29. A method of manufacturing a semiconductor device according to claim 23, wherein the semiconductor device is an EL display device.
- 30. A method of manufacturing a semiconductor device according to claim 23, wherein the semiconductor device is at least one selected from the group consisting of a mobile computer, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.
- 31. A method of manufacturing a semiconductor device having a SOT structure, comprising:
forming an insulating film on a conducive material comprising a silicide material; forming a contact hole in the insulating film to expose the conductive material at a bottom thereof; forming a wiring material in electrical contact with the conductive material at least at the bottom of the contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group on the wiring material; and fluidizing at least the wiring material by a heat treatment at a temperature of 400° C. or lower.
- 32. A method of manufacturing a semiconductor device according to claim 31, wherein the SOT structure comprises a single crystal silicon.
- 33. A method of manufacturing a semiconductor device according to claim 31, wherein the conductive material comprises at least one of aluminum and a conductive semiconductor material.
- 34. A method of manufacturing a semiconductor device according to claim 31, wherein the silicide material comprises at least one selected from the group consisting of tantalum silicide, tungsten silicide and titanium silicide.
- 35. A method of manufacturing a semiconductor device according to claim 31, wherein the wiring material comprises aluminum.
- 36. A method of manufacturing a semiconductor device according to claim 31, wherein the 12 through 15 group element comprises at least one selected from the group consisting of Ge, Sn, Ga, Pb, Zn, In, and Sb.
- 37. A method of manufacturing a semiconductor device according to claim 31, wherein the semiconductor device is an EL display device.
- 38. A method of manufacturing a semiconductor device according to claim 31, wherein the semiconductor device is at least one selected from the group consisting of a mobile computer, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.
- 39. A method of manufacturing a semiconductor device having a SOI structure comprising a CMOS circuit, comprising:
forming an insulating film on a conducive material comprising a silicide material; forming a contact hole in the insulating film to expose the conductive material at a bottom thereof; forming a wiring material in electrical contact with the conductive material at least at the bottom of the contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group on the wiring material; and fluidizing at least the wiring material by a heat treatment at a temperature of 400° C. or lower.
- 40. A method of manufacturing a semiconductor device according to claim 39, wherein the SOI structure comprises a single crystal silicon.
- 41. A method of manufacturing a semiconductor device according to claim 39, wherein the conductive material comprises at least one of aluminum and a conductive semiconductor material.
- 42. A method of manufacturing a semiconductor device according to claim 39, wherein the silicide material comprises at least one selected from the group consisting of tantalum silicide, tungsten silicide and titanium silicide.
- 43. A method of manufacturing a semiconductor device according to claim 39, wherein the wiring material comprises aluminum.
- 44. A method of manufacturing a semiconductor device according to claim 39, wherein the 12 through 15 group element comprises at least one selected from the group consisting of Ge, Sn, Ga, Pb, Zn, In, and Sb.
- 45. A method of manufacturing a semiconductor device according to claim 39, wherein the semiconductor device is an EL display device.
- 46. A method of manufacturing a semiconductor device according to claim 39, wherein the semiconductor device is at least one selected from the group consisting of a mobile computer, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.
Priority Claims (2)
Number |
Date |
Country |
Kind |
8-311322 |
Nov 1996 |
JP |
|
8-317139 |
Nov 1996 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application serial no. 09/704,383, filed Oct. 31, 2000, which is a continuation of U.S. application serial no. 08/965,624, filed Nov. 6, 1997.
Continuations (2)
|
Number |
Date |
Country |
Parent |
09704383 |
Oct 2000 |
US |
Child |
10176206 |
Jun 2002 |
US |
Parent |
08965624 |
Nov 1997 |
US |
Child |
09704383 |
Oct 2000 |
US |