Claims
- 1. A method of fabricating a semiconductor device having a conductive material and an insulating film formed on said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming a wiring material in electrical contact with said conductive material at least at the bottom of said contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on said wiring material; and fluidizing at least said wiring material by a heat treatment at a temperature of 400° C. or lower.
- 2. A method of fabricating a semiconductor device having a conductive material and an insulating film formed on said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming titanium film in contact with said conductive material at least at the bottom of said contact hole; forming a wiring material in contact with a surface of said titanium film; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on said wiring material; and fluidizing at least said wiring material by a heat treatment at a temperature of 400° C. or lower.
- 3. A method of fabricating a semiconductor device having a conductive material and an insulating film comprising a resin material formed over said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming a wiring material in electrical contact with the conductive material at least at the bottom of said contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on said wiring material; and fluidizing at least said wiring material by a heat treatment at a temperature of 400° C. or lower.
- 4. A method of fabricating a semiconductor device having a conductive material and an insulating film comprising a resin material formed over said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming a wiring material in electrical contact with said conductive material at least at the bottom of said contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on said wiring material; and fluidizing at least said wiring material by a heat treatment.
- 5. A method of fabricating a semiconductor device having a conductive material and an insulating film comprising a resin material formed over said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming titanium film in contact with said conductive material at least at the bottom of said contact hole; forming a wiring material in contact with a surface of said titanium film; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on a surface of the wiring material; and fluidizing at least said wiring material by a heat treatment.
- 6. A method of fabricating a semiconductor device having a conductive material and an insulating film comprising a resin material formed over said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming a wiring material in electrical contact with said conductive material at least at the bottom of said contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on a surface of the wiring material; and fluidizing at least said wiring material by a heat treatment, wherein said heat treatment is carried out by irradiating a light from a lamp.
- 7. A method according to any one of claims 1 to 6, wherein the wiring material and the film comprising the element belonging to 12 through 15 groups are continuously laminated without being opened to an atmosphere.
- 8. A method according to any one claims 1 to 6, wherein said conductive material comprises aluminum or a material including aluminum as a major component or a conductive semiconductor material.
- 9. A method according to any one claims 1 to 6, wherein said wiring material comprises aluminum.
- 10. A method according to any one of claims 1 to 6, wherein said heat treatment is conducted in an atmosphere including hydrogen.
- 11. A method according to any one claims 1 to 6, wherein said element belonging to 12 through 15 groups is one or a plurality elements selected from the group consisting of Ge, Sn, Ga, Pb, Zn, In, and Sb.
- 12. A method according to any one of claims 1 to 2, wherein said insulating film comprises a permeable organic resin material.
- 13. A method according to any one of claims 3 to 6, wherein said resin material comprises one selected from the group consisting of polyimide, polyamide, and polyimide amide.
- 14. A method according to any one claims 1 to 6, wherein said semiconductor device is an EL display device.
- 15. A method according to any one of claims 1 to 6, wherein said semiconductor device is one selected from the group consisting of a mobile computer, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.
- 16. A method to claim 6, wherein said light comprises an ultraviolet light or an infrared light.
- 17. A method of fabricating an EL display device comprising a conductive material and an insulating film formed on said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming a wiring material in electrical contact with said conductive material at least at the bottom of said contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on said wiring material; and fluidizing at least said wiring material by a heat treatment at a temperature of 400° C. or lower.
- 18. A method of fabricating an EL display device comprising a conductive material and an insulating film formed on said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming titanium film in contact with said conductive material at least at the bottom of said contact hole; forming a wiring material in contact with a surface of said titanium film; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on said wiring material; and fluidizing at least said wiring material by a heat treatment at a temperature of 400° C. or lower.
- 19. A method of fabricating an EL display device comprising a conductive material and an insulating film comprising a resin material formed over said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming a wiring material in electrical contact with the conductive material at least at the bottom of said contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on said wiring material; and fluidizing at least said wiring material by a heat treatment at a temperature of 400° C. or lower.
- 20. A method of fabricating an EL display device comprising a conductive material and an insulating film comprising a resin material formed over said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming a wiring material in electrical contact with said conductive material at least at the bottom of said contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on said wiring material; and fluidizing at least said wiring material by a heat treatment.
- 21. A method of fabricating an EL display device comprising a conductive material and an insulating film comprising a resin material formed over said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming titanium film in contact with said conductive material at least at the bottom of said contact hole; forming a wiring material in contact with a surface of said titanium film; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on a surface of the wiring material; and fluidizing at least said wiring material by a heat treatment.
- 22. A method of fabricating an EL display device comprising a conductive material and an insulating film comprising a resin material formed over said conductive material, said method comprising the steps of:forming a contact hole in said insulating film and exposing said conductive material at a bottom thereof; forming a wiring material in electrical contact with said conductive material at least at the bottom of said contact hole; forming a film comprising an element selected from the group consisting of 12 through 15 group elements on a surface of the wiring material; and fluidizing at least said wiring material by a heat treatment, wherein said heat treatment is carried out by irradiating a light from a lamp.
- 23. A method according to any one of claims 17 to 22, wherein the wiring material and the film comprising the element belonging to 12 through 15 groups are continuously laminated without being opened to an atmosphere.
- 24. A method according to any one of claims 17 to 22, wherein said conductive material comprises aluminum or a material including aluminum as a major component or a conductive semiconductor material.
- 25. A method according to any one of claims 17 to 22, wherein said wiring material comprises aluminum.
- 26. A method according to any one of claims 17 to 22, wherein said heat treatment is conducted in an atmosphere including hydrogen.
- 27. A method according to any one of claims 17 to 22, wherein said element belonging to 12 through 15 groups is one or a plurality elements selected from the group consisting of Ge, Sn, Ga, Pb, Zn, In and Sb.
- 28. A method according to any one of claims 17 and 18, wherein said insulating film comprises a permeable organic resin material.
- 29. A method according to any one of claims 19 to 22, wherein said resin material comprises one selected from the group consisting of polyimide, polyamide, and polyimide amide.
- 30. A method according to any one of claims 17 to 22, wherein said EL display device is incorporated in at least one selected from the group consisting of a mobile computer, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.
- 31. A method according to claim 22, wherein said light comprises an ultraviolet light or an infrared light.
Priority Claims (2)
Number |
Date |
Country |
Kind |
8-311322 |
Nov 1996 |
JP |
|
8-317139 |
Nov 1996 |
JP |
|
Parent Case Info
This is a continuation of U.S. application Ser. No. 08/965,624, filed Nov. 6, 1997, U.S. Pat. No. 6,171,961.
US Referenced Citations (38)
Foreign Referenced Citations (2)
Number |
Date |
Country |
1-156725 |
Jun 1989 |
JP |
07-135318 |
May 1995 |
JP |
Non-Patent Literature Citations (1)
Entry |
Kim, et al., Planarized Black Matrix on TFT Structure for TFT-LCD Monitors; 4.4; 1997; Kiheung, Korea; SID 97 Digest, pp. 19-22. |
Continuations (1)
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Number |
Date |
Country |
Parent |
08/965624 |
Nov 1997 |
US |
Child |
09/704383 |
|
US |