This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2018-212423, filed on Nov. 12, 2018, the entire contents of which are incorporated herein by reference.
The present disclosure relates to a technique for forming a film by supplying a gas to a substrate.
As one method for forming a thin film such as, for example, a silicon nitride film, on a semiconductor wafer (hereinafter referred to as a “wafer”) which is a substrate, there is known an ALD (Atomic Layer Deposition) method in which reaction products are stacked by alternately and repeatedly supplying a raw material gas and a reaction gas onto a front surface of the wafer. As a film forming apparatus for performing a film forming process using the ALD method, for example, as disclosed in Patent Document 1, there is available a configuration in which a rotary table for arranging a plurality of wafers side by side in a circumferential direction and revolving the wafers is provided inside a vacuum container. In this film forming apparatus, a raw material gas supply region and a reaction gas supply region spaced apart from each other in the rotational direction of the rotary table are formed. A film is formed on each of the wafers by alternately passing the wafers through the raw material gas supply region and the reaction gas supply region.
In a film forming apparatus for forming a film by supplying a raw material gas and a reaction gas to a revolving substrate, Patent Document 1 discloses a technique for setting the angle between gas injectors to be less than 180 degrees, and forming a region in which the reaction gas converted into plasma has a uniform concentration to make the film thickness uniform.
Patent Document 1: Japanese Laid-Open Patent Publication No. 2017-117943
According to one embodiment of the present disclosure, there is provided a film forming apparatus for forming a thin film by alternately supplying a raw material gas and a reaction gas to a substrate in a repetitive manner, including: a stage on which the substrate is mounted; a raw material gas supply part configured to supply the raw material gas to the substrate mounted on the stage and adsorb the raw material gas onto the substrate, the raw material gas supply part including a plurality of divided supply portions configured to independently supply the raw material gas toward a plurality of gas reception regions which are set by dividing a mounting surface of the stage on which the substrate is mounted; a plurality of raw material gas supply lines by which the plurality of divided supply portions are connected to a raw material gas source, the plurality of raw material gas supply lines configured to supply the raw material gas toward the raw material gas supply part in a parallel relationship with each other; a plurality of concentration adjustment gas supply lines by which the plurality of divided supply portions are connected to a concentration adjustment gas source, the plurality of concentration adjustment gas supply lines configured to supply a concentration adjustment gas for adjusting a concentration of the raw material gas toward the raw material gas supply part in a parallel relationship with each other, each of the plurality of concentration adjustment gas supply lines including supply/cutoff valves for selecting some of the plurality of divided supply portions to supply the concentration adjustment gas; and a reaction gas supply part configured to supply the reaction gas reacting with the raw material gas adsorbed onto the substrate to generate a reaction product constituting the thin film.
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the present disclosure.
Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, systems, and components have not been described in detail so as not to unnecessarily obscure aspects of the various embodiments.
A film forming apparatus according to a first embodiment will be described. As shown in
The rotary table 2 is fixed to a substantially cylindrical core portion 21 at the center thereof. The rotary table 2 is configured to be rotatable about a vertical axis (in this example, counterclockwise when viewed from above) coinciding with the rotation center C in
Four circular recesses 24 on which wafers W are respectively mounted are provided in an upper surface of the rotary table 2 along the circumferential direction (rotational direction). In addition, a heater 7 as a temperature adjustment part for adjusting a temperature of the rotary table 2 and heating the wafers W mounted on the rotary table 2 to, for example, 450 degrees C., is provided concentrically in the bottom of the vacuum container 1. Reference numeral 73 in
As shown in
As shown in
As shown in
With respect to the rotary table 2 that passes below the fan-shaped region Z0, a plurality of “gas reception regions” is divided in the radial direction and set to extend from the inner peripheral side toward the outer peripheral side of the revolution center of the mounting surface of the wafer W. In the meantime, eleven divided supply portions Z1 to Z11 for supplying the DCS gas independently of one another toward the gas reception regions are set in the fan-shaped region Z0. That is to say, the divided supply portions Z1 to Z11 are also divided in the radial direction from the inner peripheral side to the outer peripheral side of the revolution center of the mounting surface of the wafer W. As shown in
Upstream sides of the gas flow paths 40A to 40K are connected to one ends of DCS gas supply lines 401 to 411 for supplying the DCS gas, respectively. The other ends of the DCS gas supply lines 401 to 411 are connected to one end of a common DCS gas supply pipe 400. A mass flow controller (MFC) 47 is provided in the DCS gas supply pipe 400. The other end of the DCS gas supply pipe 400 is connected to the DCS gas source 46. The DCS gas supply lines 401 to 411 correspond to raw material gas supply lines of this embodiment, and the DCS gas source 46 corresponds to a raw material gas source.
Therefore, the divided supply portions Z1 to Z11 are connected to the DCS gas source 46 in a parallel relationship with each other via the respective DCS gas supply lines 401 to 411. The DCS gas supply lines 401 to 411 are provided with orifices as flow rate ratio adjustment parts for branching the gas supplied from the DCS gas source 46 to the divided supply portions Z1 to Z11 so as to have a predetermined flow rate ratio.
Furthermore, one ends of Ar gas supply lines 401A to 411A for supplying an argon gas (Ar gas) as a concentration adjustment gas therethrough are connected to the DCS gas supply lines 401 to 411 at the downstream side of the orifices 9 (at the side of the divided supply portions Z1 to Z11), respectively. The other end of each of the Ar gas supply lines 401A to 411A is connected to one end of an Ar gas supply pipe 440. The other end of the Ar gas supply pipe 440 is connected to an Ar gas source 48. The Ar gas supply lines 401A to 411A correspond to concentration adjustment gas supply lines of this embodiment, and the Ar gas source 48 corresponds to a concentration adjustment gas source.
Accordingly, the divided supply portions Z1 to Z11 are connected to the Ar gas source 48 in a parallel relationship with each other via the respective Ar gas supply lines 401A to 411A. The respective Ar gas supply lines 401A to 411A are provided with Ar gas valves V1 to V11 which are supply/cutoff valves. An MFC 49 is provided in the Ar gas supply pipe 440. In this embodiment, when an opening signal is received, each of the Ar gas valves V1 to V11 is opened to supply an Ar gas. When a closing signal is received, each of the Ar gas valves V1 to V11 is closed to stop the supply of the Ar gas. In the following description, the opened state and the closed state of the Ar gas valves V1 to V11 will be also referred to as “on” and “off”, respectively.
Next, the exhaust port 42 and the purge gas discharge port 43 formed in the lower surface of the gas supply/exhaust unit 4 will be described. The exhaust port 42 and the purge gas discharge port 43 are annularly formed in a peripheral edge portion of the lower surface of the gas supply/exhaust unit 4. The purge gas discharge port 43 is located outside the exhaust port 42 provided so as to surround the fan-shaped region Z0 (see
Reference numerals 42A and 43A in
During the film forming process, the discharge of the DCS gas from the gas discharge ports 41, the exhaust of the gas from the exhaust port 42 and the discharge of the purge gas from the purge gas discharge port 43 are performed in parallel. Thus, the DCS gas and the purge gas discharged toward the rotary table 2 flow over the upper surface of the rotary table 2 and then travel toward the exhaust port 42. The DCS gas and the purge gas are exhausted from the exhaust port 42. As the purge gas is discharged and exhausted in this way, an atmosphere below the fan-shaped region Z0 is separated from an external atmosphere. Thus, it is possible to supply the DCS gas toward only a region facing the fan-shaped region Z0 in the rotary table 2.
Returning to
One end of a reaction gas supply pipe 53 is connected to a base end of the reaction gas nozzle 51, and the other end of the reaction gas supply pipe 53 is connected to an NH3 gas source 56 filled with an ammonia (NH3) gas. Furthermore, one end of a hydrogen (H2) gas supply pipe 55 is connected to the reaction gas supply pipe 53. A H2 gas source 57 is connected to the other end of the H2 gas supply pipe 55. One end of a modification gas supply pipe 54 is connected to a base end of the modification gas nozzle 52, and the other end of the modification gas supply pipe 54 is connected to an H2 gas source 58 filled with a H2 gas. Reference numerals V53, V54 and V55 in
Furthermore, a plasma generation part 81 is provided above a region of the top plate 11 extending forward from a position of each of the reaction gas nozzle 51 and the modification gas nozzle 52. As shown in
In a processing space above the rotary table 2, a region below the gas supply/exhaust unit 4 corresponds to an adsorption region where the DCS gas is adsorbed, and a region below the reaction gas nozzle 51 corresponds to a reaction region where the DCS gas is nitrided. In addition, a region below the plasma generation part 81 provided in a corresponding relationship with the modification gas nozzle 52 corresponds to a modification region where a SiN film is modified by plasma.
A region between the back side of the modification gas nozzle 52 and at the front side of the plasma generation part 81 corresponding to the reaction gas nozzle 51 in the rotational direction of the rotary table 2, corresponds to a separation region 60. A ceiling surface of the separation region 60 is set to be lower than a ceiling surface on which the plasma generation part 81 is provided. The separation region 60 is provided to prevent the NH3 gas supplied to the back side of the separation region 60 in the rotational direction of the rotary table 2 from being mixed with and diluted by the H2 gas supplied to the front side of the separation region 60 in the rotational direction of the rotary table 2. The gas supply/exhaust unit 4 can also form a curtain of a separation gas so as to intersect the passage region of the wafer W. Thus, it can be said that the gas supplied from the reaction gas nozzle 51 is prevented from being diluted by the gas supplied from the modification gas nozzle 52.
Furthermore, as shown in
As shown in
Also connected to the controller 100 is an external sequencer 105 which is a controller for controlling the opening and closing of the Ar gas valves V1 to V11 and the adjustment of a flow rate of the Ar gas by an MFC 49. The external sequencer 105 is configured by, for example, a computer and is configured to store a program for opening and closing each of the Ar gas valves V1 to V11. For example, when a signal for starting the film forming process is inputted from the controller 100, a control signal for opening or closing the Ar gas valves V1 to V11 is outputted to the Ar gas valves V1 to V11 in accordance with the film forming recipe to perform the supply/cutoff of the Ar gas as indicated in the operation to be described later.
When performing the film forming process using the film forming apparatus having the above-described configuration, a thickness of a film formed on the wafer W may become uneven by turbulence of an air flow due to the shape of the recesses 24 for accommodating the wafers W, the non-uniformity of plasma, or the like.
Therefore, in the film forming apparatus and the film forming method according to the present disclosure, the film thickness distribution of the film formed on the wafer W as shown in
Next, the operation of the film forming apparatus of the present disclosure based on the opening/closing sequence of
Subsequently, a NH3 gas and a H2 gas are supplied from the reaction gas nozzle 51, and an H2 gas is supplied from the modification gas nozzle 52. While supplying each gas in this way, a high frequency power is supplied from each plasma generation part 81 to form each gas into a plasma. In the gas supply/exhaust unit 4, a DCS gas is supplied from all the gas discharge ports 41. Furthermore, an Ar gas is discharged from the purge gas discharge port 43, and gases are exhausted from the exhaust port 42.
For example, when the rotary table 2 begins to rotate, the controller 100 outputs a trigger signal for starting the opening/closing sequence of the Ar gas valves V1 to V11 to the external sequencer 105. As shown in
When the wafer W is positioned below the gas supply/exhaust unit 4 with the rotation of the rotary table 2, the DCS gas is supplied toward and adsorbed onto the front surface of the wafer W. As the wafer W arrives below the reaction gas nozzle 51 with the continuous rotation of the rotary table 2, the DCS adsorbed onto the wafer W reacts with the NH3 to generate SiN as a reaction product. Furthermore, Cl (chlorine) remaining on the wafer W is removed by active species of hydrogen generated by forming the H2 gas supplied to the region into plasma. As the wafer W arrives below the modification gas nozzle 52 by the continuous rotation of the rotary table 2, Cl remaining on the wafer W is removed by the active species of hydrogen.
Thus, as the rotary table 2 continues to rotate as described above, the wafer W sequentially passes below the gas supply/exhaust unit 4, the reaction gas nozzle 51 and the modification gas nozzle 52 a plurality of times in a repetitive manner, whereby SiN is deposited on the front surface of the wafer W to form a thin film of SiN (SiN film) and the modification of the SiN film proceeds.
When a preset time (882 seconds in this example) elapses from the start of supply of the DCS gas, a signal for opening the Ar gas valve V6 for 3 seconds is outputted while continuously supplying the DCS gas. In this example, a time from when the Ar gas valve V6 receives the opening signal to when the Ar gas valve V6 is fully opened is 0.05 seconds. Therefore, a time from when the Ar gas valve V6 receives the opening signal to when the Ar gas valve V6 receives a closing signal is set to 3.05 seconds. As a result, the DCS gas supplied from the divided supply portion Z6 toward the mounting surface for the wafer W is diluted (concentration-adjusted) with the Ar gas for 3 seconds.
Subsequently, the external sequencer 105 outputs a signal for turning off the Ar gas valve V6 and outputs a signal for turning on the Ar gas valve V11 for 6 seconds (a time from when the Ar gas valve V11 receives the turning-on signal to when the Ar gas valve V11 receives a turning-off signal is 6.05 seconds). Thus, the DCS gas supplied from the divided supply portion Z11 toward the mounting surface for the wafer W is diluted (concentration-adjusted) with the Ar gas for 6 seconds. Thereafter, the supply of the DCS gas is stopped and the external sequencer 105 outputs the turning-off signal for the Ar gas valve V11. As a result, the supply of all of the DCS gas, the reaction gas, the modification gas and the Ar gas for concentration adjustment is ceased and the inside of the vacuum container 10 is exhausted.
A film forming mechanism when a gas is supplied to the wafer W will now be described. When the DCS gas is supplied to the wafer W, the DCS gas is repeatedly adsorbed onto and desorbed from the wafer W. The DCS gas remaining after adsorption to the wafer W reacts with a subsequent reaction gas to form a film on the wafer W. By diluting the DCS gas with the Ar gas when supplying the DCS gas to the wafer W, the amount of adsorption of the DCS gas onto the front surface of the wafer W is reduced. Therefore, when supplying the DCS gas to the entire front surface of the wafer W, the concentration is adjusted by locally mixing the Ar gas with the DCS gas, whereby the film thickness is reduced in a region where the concentration-adjusted DCS gas is blown.
Therefore, by performing the film forming process according to the film forming recipe while executing the opening/closing sequence shown in
As described with reference to
According to the above-described embodiment, the film forming apparatus supplies the DCS gas (raw material gas) and the NH3 gas (reaction gas) to the wafer W in a repetitive manner to generate a thin film. In this case, there is provided the gas supply/exhaust unit 4 including the divided supply portions Z1 to Z11 for independently supplying the DCS gas toward the gas reception regions set by dividing the mounting surface of the wafer W. In addition, the divided supply portions Z1 to Z11 are coupled to the DCS gas source 46 which supplies the DCS gas to the gas supply/exhaust unit 4, in a parallel relationship with each other by the DCS gas supply lines 401 to 411. The orifices 9 for sorting and supplying the DCS gas at a preset flow rate ratio are provided in the respective DCS gas supply lines 401 to 411. Furthermore, the divided supply portions Z1 to Z11 are coupled to the Ar gas source 48 which supplies the Ar gas to the gas supply/exhaust unit 4, in a parallel relationship with each other by the Ar gas supply lines 401A to 411A. The Ar gas valves V1 to V11 are provided in the respective Ar gas supply lines 401A to 411A. As a result, the DCS gas can be supplied to each of the divided supply portions Z1 to Z11 in the state where the concentration of the DCS gas is adjusted by the supply and cutoff of the Ar gas. Therefore, the amount of the DCS gas adsorbed onto the wafer W can be adjusted for each of the regions facing the divided supply portions Z1 to Z11, thus adjusting the film thickness of the film formed in the plane of the wafer W.
In the present embodiment, the film thickness of the film formed in the plane of the wafer W is adjusted only by switching the supply and cutoff of the Ar gas supplied to the divided supply portions Z1 to Z11. This eliminates a need to employ a complicated structure such as providing a flow rate adjustment part in a line for supplying a gas to each of the divided supply portions Z1 to Z11, which makes it possible to achieve a simplified configuration.
In addition, the present inventors have found that when adjusting the concentration of the raw material gas, the influence of a variation in the thickness of the SiN film on a unit flow rate variation is larger when increasing or decreasing a flow rate of the Ar gas as an inert gas than when increasing or decreasing a flow rate of the DCS gas. Since the SiN film is formed through a chemical reaction after physical adsorption, it is considered that a reaction time is rate-limited, and the sensitivity of the adsorption amount of DCS to the variation in film thickness of the SiN film is relatively small even if the supply amount of the DCS gas is varied. On the other hand, an increase or decrease in the mixing amount of Ar having a relatively great atomic weight directly affects the inhibition of physical adsorption of DCS onto the wafer W. It is presumed that the influence of the increase or decrease in the mixing amount of Ar on the variation in film thickness of the SiN film is large. Accordingly, it can be said that the gas supply/exhaust unit 4 of this embodiment for supplying or cutting off the Ar gas from the Ar gas supply lines 401A to 411A toward the respective DCS gas supply lines 401 to 411 has a configuration capable of easily adjusting the thickness of the SiN film passing through the respective gas reception regions.
In the present embodiment, the supply time of the Ar gas supplied to the predetermined divided supply portions Z1 to Z11 (the on/off time of the Ar gas valves V1 to V11) with respect to the total time during which the DCS gas is supplied is adjusted. Thus, for example, as compared with the case where MFCs are provided in the respective DCS gas supply lines 401 to 411 to separately adjust the supply flow rates of the DCS gas, it is possible to easily adjust the film thickness of the wafer W passing through the gas reception regions that face the divided supply portions Z1 to Z11. Alternatively, the supply of the DCS gas may be performed only by the pressure loss in pipes or the like, instead of providing the orifices 9 in the respective DCS gas supply lines 401 to 411.
The opening/closing sequence shown in
In the above-described embodiment, the divided supply portions Z1 to Z11 are divided into 11 sections. However, the film thickness distribution control which utilizes the concentration adjustment of the DCS gas by the supply and cutoff of the Ar gas may be applied to any film forming apparatus in which two or more divided supply portions are provided.
Furthermore, the technique according to the present disclosure may be applied to a single-wafer type film forming apparatus in which a film is formed by supplying a gas toward one wafer W mounted on a stage. In some embodiments, the technique of the present disclosure may be applied to a film forming apparatus that supplies a raw material gas and a reaction gas toward a wafer movement region in which the wafer W linearly moves, instead of supplying the DCS gas toward the wafer W revolving around the vertical axis.
In addition, for example, the divided supply portions Z1 to Z11 in the fan-shaped region Z0 shown in
The reaction inhibition gas is a gas that competes with the DSC gas and adsorbs onto the wafer W but does not generate a reaction product even when the NH3 gas is supplied. An example of the reaction inhibition gas may include a Cl gas.
The film forming apparatus shown in
When the Cl gas is supplied to the wafer W, the Cl gas is adsorbed onto the wafer prior to the DCS gas. As a result, the adsorption of a silicon-based gas such as a DCS gas or the like is inhibited at the site where the Cl gas adheres. Furthermore, the Cl gas does not react with a reaction gas, i.e., a NH3 gas in this example, to form a thin film. Therefore, the thickness of the SiN film can be reduced by adjusting the amount of adsorption of the DCS gas so as to be locally reduced in the region where the Cl gas is adsorbed.
Some of the gas supply pads 701 to 711 may be constituted as a raw material gas preliminary supply part that supplies the DCS gas instead of supplying the Cl gas. As a result, it is possible to suppress an increase in film thickness by blowing the Cl gas from the gas supply pads 701 to 711 toward a portion of the wafer W having a thick film thickness. It is also possible to locally increase the film thickness by locally blowing the DCS gas toward a portion of the wafer W having a thin film thickness. With this configuration, the thickness of the film formed on the wafer W can be adjusted with higher accuracy. The gas supply pads 701 to 711 may be provided at positions overlapping with the divided supply portions Z1 to Z11. Even in this case, the similar effects can be obtained as long as the gas supply pads 701 to 711 are provided in end portions of the divided supply portions Z1 to Z11 at the front side rather than the rear side.
Next, a second embodiment in which the supply and cutoff of an Ar gas are switched according to the rotation angle of the rotary table 2 to adjust a deposition amount in the revolution direction of the wafers W will be described.
For example, in an example shown in
Furthermore, there are provided DCS gas supply lines 401 and 402 by which the divided supply portions Z101 and Z102 are connected to a DCS gas source 46 in a parallel relationship with each other. The aforementioned orifices 9 are provided in the DCS gas supply lines 401 and 402, respectively. Moreover, there are provided Ar gas supply lines 401A and 402A by which the divided supply portions Z101 and Z102 are connected to an Ar gas source 48 in a parallel relationship with each other. Ar gas valves V1 and V2 are provided in the Ar gas supply lines 401A and 402A, respectively.
Furthermore, an encoder is installed in the rotation mechanism 23 of the rotary table 2. The position of the gas supply nozzle 4A and the position of the wafer W can be adjusted by adjusting the rotation angle of the rotary table 2 according to a read value obtained by the encoder. θ1 to θ4 shown in
Next, the operation of the film forming apparatus according to the second embodiment will be described with reference to
For example, first, the film forming process is performed in the same manner as the above-described embodiment while supplying the DCS gas alone from the gas supply nozzle 4A. In this case, as described above, the thin regions 200 and 201 are respectively formed on the wafer W.
Therefore, the film forming apparatus of this example continuously performs film formation so as to compensate for the film thickness in these regions. For example, in a case where the rotation speed of the rotary table 2 in the preceding film forming process is set to 10 rpm, the rotation speed in the current film forming process is reduced to 1 rpm. When the gas supply nozzle 4A is located at the front side of the wafer W (when the gas supply nozzle 4A does not reach the rotation angle θ1) as shown in
When the rotary table 2 is rotated and the gas supply nozzle 4A is positioned between the rotation angles θ1 and θ2 as shown in
As a result, during a period in which the rotation angle of the rotary table 2 falls within a range of θ1 to θ2, the DCS gas alone is discharged from the divided supply portion Z101 in the gas supply nozzle 4A toward the inner peripheral side of the rotary table 2. On the other hand, the DCS gas diluted with the Ar gas at the outer peripheral side of the rotary table 2 is supplied from the divided supply portion Z102. With these operations, when the gas supply nozzle 4A is positioned between θ1 and θ2, the amount of the DCS gas adsorbed onto the wafer W in the inner peripheral side of the rotary table 2 increases, and the amount of the DCS gas adsorbed onto the wafer W in the outer peripheral side of the rotary table 2 decreases.
Similarly, during a period from θ2 to θ3 in which the gas supply nozzle 4A is located in the region near the center of the wafer W as shown in
As described above, the film forming apparatus according to the second embodiment supplies the DCS gas while supplying or cutting off the Ar gas in conformity with the rotation angle of the wafer W. By this operation, the DCS gas not diluted with the Ar gas is supplied to the above-described regions 200 and 201, and the DCS gas diluted with the Ar gas is supplied to other regions. With this configuration, it is possible to adsorb the DCS gas onto the wafer W so as to compensate for a thin portion on the wafer W while suppressing a thick portion from being formed on the wafer W.
It should be noted that the embodiments and modifications disclosed herein are exemplary in all respects and are not restrictive. The above-described embodiments may be omitted, replaced or modified in various forms without departing from the scope and spirit of the appended claims.
In order to verify the effects of the present disclosure, a film forming process was performed by the film forming apparatus using the gas supply/exhaust unit 4 in which some of the divided supply portions ZA to ZE shown in
In both Example 1 and Example 2, two divided supply portions ZD and ZE among the five divided supply portions ZA to ZE were configured to have in an island shape and were arranged at the inner peripheral side and the outer peripheral side of the rotary table 2, respectively.
The two island-shaped divided supply portions ZD and ZE were provided so as to discharge gases over a range of an angle of 5 degrees while coinciding with the rotation center C of the rotary table 2.
The two island-shaped divided supply portions ZD and ZE were provided so as to discharge gases over a range of an angle of 14 degrees while coinciding with the rotation center C of the rotary table 2.
Film forming processes were performed using the film forming apparatus provided with each of the gas supply/exhaust units 4 of Example 1 and Example 2. The film thickness distribution when the Ar gas is supplied to each of the island-shaped divided supply portions ZD and ZE to form a film on the wafer W was investigated.
The flow rates of the DCS gas, the NH3 gas and the H2 gas were set in the same manner as in the above embodiments, the rotational speed of the rotary table 2 was set to 10 rpm, and the film forming process was performed for 15 minutes. At that time, the film forming process was performed by supplying the DCS gas while supplying the Ar gas in each of the island-shaped divided supply portions ZD and ZE. The flow rate of the Ar gas was set to 0, 3, 6, 12, 20, 50 and 75 sccm by the MFC 49 provided in the Ar gas supply pipe 440. The film forming process was performed at each flow rate of the Ar gas.
As shown in
According to the present disclosure in some embodiments, it is possible to adjust a film thickness distribution in a plane of a substrate when forming a film by supplying gases to the substrate.
Number | Date | Country | Kind |
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2018212423 | Nov 2018 | JP | national |