Claims
- 1. A method of finishing of a semiconductor wafer surface being finished comprising the steps of:
providing a finishing element finishing surface capable of abrading the semiconductor wafer surface during finishing; positioning the semiconductor wafer surface proximate to the finishing surface; providing an organic lubricant proximate to the surface of the semiconductor wafer surface being finished; applying an operative finishing motion in the operative finishing interface comprising the interface between the semiconductor wafer surface being finished and the finishing element finishing surface; and wherein applying the operative finishing motion forms an organic lubricating film layer of at most 10 molecules thick which interacts with and adheres to the semiconductor wafer surface being finished.
- 2. The method of finishing according to claim 1 wherein the semiconductor wafer surface has a first uniform region and a second uniform region and the organic lubricating film differentially lubricates the first uniform region and the second uniform region.
- 3. The method of finishing according to claim 1 wherein:
the semiconductor wafer surface has a first uniform region and a second uniform region; the organic lubricant comprises a plurality of different synthetic organic lubricants; and the plurality of different synthetic organic lubricants differentially lubricate the first uniform region and the second uniform region with compositionally different organic lubricating films.
- 3. The method of finishing according to claim 1 wherein the organic lubricant can be removed from the semiconductor wafer surface after finishing with a water based composition.
- 4. The method of finishing according to claim 1 wherein the organic lubricant comprises a water soluble organic lubricant.
- 5. The method of finishing according to claim 1 wherein the semiconductor wafer surface has at least one unwanted raised region wherein the organic lubricating film thickness is less on the unwanted raised region and the organic lubricating film thickness is greater on at least a portion of the semiconductor surface below and proximate to the unwanted raised region.
- 6. The method of finishing according to claim 1 wherein the semiconductor wafer surface has at least one unwanted raised region wherein the organic lubricating film thickness on the unwanted raised region is at most one half the molecular layer thickness of the organic lubricating film thickness below and proximate to the unwanted raised region.
- 7. The method of finishing according to claim 1 further comprising an addition step of controlling the thickness of the organic lubricating film by changing at least one lubrication control parameter in a manner that changes the coefficient of friction in at least two different regions of the operative finishing interface in response to an in situ control signal.
- 8. A method of finishing of a semiconductor wafer surface having different uniform regions comprising the steps of:
providing an abrasive finishing surface; positioning the semiconductor wafer surface proximate to the finishing surface; providing an organic lubricant between the abrasive finishing element finishing surface and the different uniform regions of the semiconductor wafer surface; applying the operative finishing motion that transfers the organic lubricant from the finishing surface to an operative finishing interface comprising the interface between the abrasive finishing surface and the semiconductor wafer surface being finished forming an organic lubricating film in the operative finishing interface; and controlling the thickness of the organic lubricating film by changing at least one control parameter in a manner that changes the coefficient of friction in at least two different uniform regions of the operative finishing interface in response to an in situ control signal during at least a portion of the finishing cycle time.
- 9. A method of finishing according to claim 8 wherein the semiconductor wafer being finished has a low-k dielectric layer having a value of less than 2.5.
- 10. A method of finishing according to claim 8 wherein the semiconductor wafer being finished has a plurality of low-k dielectric layers, each having a value of less than 2.0.
- 10. A method of finishing according to claim 8 wherein the semiconductor wafer being finished has at least 3 porous low-k dielectric layers.
- 11. A method of finishing according to claim 8 wherein the semiconductor wafer being finished has a plurality of metal layers.
- 12. A method of finishing according to claim 8 wherein the semiconductor wafer being finished has at least 3 of metal layers.
- 13. A method of finishing according to claim 8 wherein the abrasive finishing surface comprises, at least in part, an abrasive polymeric material.
- 14. A method of finishing of a semiconductor wafer surface having a conductive region being finished comprising the steps of:
providing an abrasive finishing surface; providing an organic boundary lubricant between the abrasive finishing surface and the conductive region of the semiconductor wafer surface being finished; and applying an operative finishing motion between the semiconductor wafer surface being finished and the abrasive finishing surface forming a heterogeneous organic lubricating film of at most 10 molecules thick on the conductive region of the semiconductor wafer surface wherein:
the operative finishing motion forms a friction in the interface between the conductive region on the semiconductor wafer surface and the finishing element finishing surface; and the organic lubricating film physically or chemically interacts with and adheres to the conductive region on the semiconductor wafer surface.
- 15. A method of finishing according to claim 14 wherein the semiconductor wafer being finished has a plurality of porous low-k dielectric layers.
- 16. A method of finishing according to claim 14 wherein the semiconductor wafer being finished has a plurality of low-k dielectric layers having organic polymers therein.
- 17. A method of finishing according to claim 14 wherein the semiconductor wafer being finished has a plurality of metal layers.
- 18. A method of finishing according to claim 14 wherein the semiconductor wafer being finished has at least 3 of metal layers.
- 19. A method of finishing according to claim 14 wherein the abrasive finishing element finishing surface comprises, at least in part, an abrasive polymeric material.
- 20. A method of finishing of a semiconductor wafer surface being finished having uniform regions and a plurality of wafer die, each wafer die having a repeating pattern of unwanted raised regions, the method comprising the steps of;
providing an abrasive finishing element finishing surface; providing an organic lubricant to an operative finishing interface comprising the interface between the abrasive finishing element finishing surface and the semiconductor wafer surface being finished; and applying an operative finishing motion to the operative finishing interface forming an organic lubricating film with a thickness of at most 6 molecules on at least a portion of the semiconductor wafer surface being finished.
- 21. A method of finishing according to claim 20 wherein the semiconductor wafer being finished has a plurality of metal layers.
- 22. A method of finishing according to claim 20 wherein the semiconductor wafer being finished has at least 3 of metal layers.
- 23. A method of finishing according to claim 20 wherein the abrasive finishing element finishing surface comprises, at least in part, an abrasive polymeric material.
- 24. A method of finishing of a semiconductor wafer surface being finished having uniform regions having a plurality of unwanted raised regions, the method comprising the steps of:
providing an abrasive finishing element finishing surface; providing an organic lubricant to an operative finishing interface; and applying an operative finishing motion to the operative finishing interface forming a marginal organic lubricating film on at least a portion of the semiconductor wafer surface being finished and wherein the operative finishing motion forms a friction in the interface between the uniform regions of the semiconductor wafer surface and the finishing element finishing surface and the organic lubricating film adheres to the uniform regions of the semiconductor wafer surface; and controlling the marginal organic lubricating film by changing at least one control parameter in a manner that changes the coefficient of friction in at least two different uniform regions of the operative finishing interface in response to an in situ control signal during at least a portion of the finishing cycle time.
- 25. A method of finishing according to claim 25 wherein the control signal for controlling comprises a signal from a energy change sensor.
- 26. A method of finishing according to claim 25 wherein the control signal for controlling comprises a signal from a plurality of energy change sensors.
- 27. A method of finishing according to claim 25 wherein the control signal for controlling comprises a signal from a plurality of friction sensors.
- 28. A method of finishing according to claim 14 wherein the semiconductor wafer being finished has a plurality of porous low-k dielectric layers.
- 29. A method of finishing according to claim 14 wherein the semiconductor wafer being finished has a plurality of low-k dielectric layers having organic polymers therein.
- 30. A method of finishing according to claim 14 wherein the semiconductor wafer being finished has a plurality of metal layers.
- 31. A method of finishing according to claim 14 wherein the abrasive finishing element finishing surface comprises, at least in part, an abrasive polymeric material.
- 32. A method of finishing of a semiconductor wafer surface having a conductive region being finished comprising the steps of:
providing an abrasive finishing element finishing surface; providing an organic boundary lubricant between the finishing element finishing surface and the conductive region of the semiconductor wafer surface being finished; and applying an operative finishing motion between the semiconductor wafer surface being finished and the abrasive finishing surface forming a heterogeneous organic lubricating film of at most 10 molecules thick on the conductive region of the semiconductor wafer surface wherein:
the operative finishing motion forms a friction in the interface between the conductive region on the semiconductor wafer surface and the finishing element finishing surface; and the organic lubricating film physically or chemically interacts with and adheres to the conductive region on the semiconductor wafer surface; and wherein the semiconductor wafer surface has at least one unwanted raised region wherein the organic lubricating film thickness is less on the unwanted raised region and the organic lubricating film thickness is greater on at least a portion of the semiconductor surface below and proximate to the unwanted raised region.
- 33. A method of finishing of a semiconductor wafer surface having at least two different uniform regions being finished comprising the steps of:
providing a finishing element finishing surface capable of inducing tribochemical wear; providing an organic lubricant to an operative finishing interface; and applying an operative finishing motion to the operative finishing interface forming a marginal organic lubricating film on at least a portion of the semiconductor wafer surface being finished and wherein the operative finishing motion forms a friction in the interface between the semiconductor wafer surface and the finishing element finishing surface and the organic lubricating film adheres to the semiconductor wafer surface; and controlling the marginal organic lubricating film by changing at least one control parameter in a manner that changes the coefficient of friction in at least two different uniform regions of the operative finishing interface in response to an in situ control signal during at least a portion of the finishing cycle time; and inducing tribochemical wear to the semiconductor wafer surface being finishing.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of Provisional Application Ser. No. 60/107,301 filed on Nov. 6, 1998 entitled “Method of finishing with a fixed abrasive finishing element having finishing aids”; Provisional Application Ser. No. 60/111,969 filed on Feb. 6, 1999 entitled “Finishing semiconductor wafers with a multilayer fixed abrasive finishing element having finishing aids”, No. 60/275,897 filed on Mar. 15, 2001 entitled “Finishing semiconductors with a lubricating layer” and No. 60/293,263 filed on May 24, 2001 entitled “Finishing element having finishing aids finishing method”. This application claims benefit of Regular application Ser. No. 09/434723 filed on Jan. 5, 1999 entitled “Fixed abrasive finishing element having finishing aids method” and Regular application Ser. No. 09/498,265 filed on Feb. 3, 2000 entitled “Finishing semiconductor wafers with a fixed abrasive finishing element”.
Provisional Applications (4)
|
Number |
Date |
Country |
|
60107301 |
Nov 1998 |
US |
|
60111969 |
Dec 1998 |
US |
|
60275897 |
Mar 2001 |
US |
|
60293263 |
May 2001 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09434723 |
Nov 1999 |
US |
Child |
09916428 |
Jul 2001 |
US |