Formation of a magnetic film on an atomic force microscope cantilever

Abstract
A thin film of a magnetic material is applied to one or both surfaces of a force sensing cantilever for use in a scanning force microscope. The cantilevers are then placed between the poles of an electromagnet and a magnetizing field applied in the direction of the soft axis of the cantilevers. The field is chosen so as to be bigger than the saturation field for the magnetic film.
Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to the use of-a magnetic field as a means of applying a time-varying force to a force-sensing cantilever in an atomic force microscope in order to enhance the imaging sensitivity of the microscope through a scheme of synchronous detection of the corresponding modulation in the cantilever deflection signal. The cantilever may be coated with a magnetic material in which case the force may be applied either as a result of the torque induced by a magnetic field on a permanently magnetized cantilever or as the result of the force on a permanent or induced magnetic moment that arises from gradients in the applied field.
2. The Prior Art
The atomic force microscope works by scanning a force-sensing probe over a surface and in close proximity to it. Small deflections of the probe are sensed and used to maintain a constant interaction force (i.e., constant height of the probe above the surface). By recording the adjustments needed to maintain the interactions constant, a topographical map of surface features may be made [Binnig, G., et al., Atomic Force Microscope, Physical Review Letters 56(9), pp. 930-933 (1986)].
An improvement results if the position of the force-sensing probe is modulated (at a frequency, f) and the corresponding ac signal detected. This is because (a) this can result in reduced bandwidth (and hence reduced noise) if synchronous (i.e., lock-in) detection is used and (b) the amplitude of the ac signal is a measure of the derivative of the interaction force versus distance. This quantity changes much more rapidly than the interaction force itself. It is positive in the region where interaction forces are attractive (usually at large distances) and negative where interaction forces are repulsive (at short distances, i.e., in contact). Such a scheme has been described for non-contact AFM operation in air by Martin et al. [Martin, Y., et al., Atomic force microscope-force mapping and profiling on a sub 100 angstrom scale, Journal of Applied Physics 61(10), pp. 4723-4729 (1987)].
It has generally been believed that such operation in fluid would not be possible because of hydrodynamic damping of the cantilever. However, two groups have recently demonstrated that sensitive ac detection of the force gradient is possible in fluids. In one case, this is done by modulating the position of the whole sample cell [Hansma, P. K., et ai., Tapping mode atomic force microscopy in liquids, Applied Physics Letters 64, pp. 1738-1740 (1994)]. This is illustrated in FIG. 1. A laser beam 10 is reflected off a force-sensing cantilever 12 deflections of which are detected by a position sensitive detector 14. The cantilever is scanned over the sample surface 16 by a piezoelectric transducer 18. The force-sensing cantilever is immersed in a fluid body 20 contained in a fluid cell 22. The fluid cell 22 is mounted on a second transducer 24 which can displace the fluid cell 22 and sample surface 16 relative to the scanning transducer 18. An ac signal 26 is applied to the second transducer 24 so as to modulate the gap 28 between the force sensing probe tip 30 on cantilever 12 and the sample surface 16. The corresponding modulation of the laser beam position is detected by the detector 14. A synchronous detector 32 determines the amplitude and phase of the modulation. These signals are used to set the operating point of the microscope. For example, in the repulsive (contact) region of interaction between the atoms on the tip and the atoms on the sample surface, the tip deflection is in phase with the modulation and the amplitude decreased by closer contact with the surface. Thus, the height of the tip is adjusted so as to give a constant, in phase, reduction of the modulation signal as the tip is scanned over the surface. A plot of these adjustments as a function of the position of the tip in the plane of the surface constitutes a topographical height map of the surface taken at constant interaction-force-gradient.
A second group [Putnam, C. A. J., et al., Viscoelasticity of living cells allows high resolution imaging by tapping mode atomic force microscopy, Applied Physics Letters, submitted (1995)] have shown that similar results may be obtained by applying the modulation signal to the scanning transducer. This is illustrated in FIG. 2. The components are the same as those shown in FIG. 1, with the exception of the second transducer 24 which is omitted in this case. The gap 28 is modulated directly by a signal 26 applied to the scanning transducer 18.
Both of these approaches suffer from several drawbacks. The frequency of modulation is limited by the low-resonant frequency of the parts that are being displaced. In one case (FIG. 1) this is the whole sample cell. In the other case (FIG. 2) it is the whole scanning assembly. Furthermore, these complex assemblies have many resonances, not all of which cause the tip to be displaced with respect to the surface. Furthermore, these schemes make use of piezoelectric transducers which require high voltages for their operation, a requirement that imposes constraints when the microscope is operated in conducting liquids.
An alternative method of modulating the gap has been proposed by Lindsay in U.S. patent application Ser. No. 08/246,035 (incorporated herein by reference) and others [O'Shea, S. J., et al., Atomic force microscopy of local compliance at solid-liquid interfaces, Chemical Physics Letters, submitted (1995)]. In this approach, a magnetic particle or coating is applied to the force sensing cantilever and an external magnetic field is used to apply a force to the cantilever. This approach works in different ways, depending upon the direction of magnetization of the particle or film. O'Shea, et al. do not describe a method for controlling the direction of the magnetization of the film on the cantilever. Neither do they describe a method for producing force-gradient images by using this technique to modulate the gap between the tip and sample. Lindsay has described a reproducible method for applying a force to a cantilever using an external magnetic field and also a method for forming images by modulating the position of the cantilever with this technique. However, the magnetic arrangement described by Lindsay requires either a large magnetic moment on the tip or a large field gradient.
Two approaches to applying a magnetic force are illustrated in FIGS. 3 and 4. FIG. 3 shows the arrangement described in Lindsay. A magnetic particle or film 33 is magnetized so that the resulting moment, M (34) lies perpendicular to the soft axis of the cantilever 36. Then a magnetic field gradient 38 is applied in the same direction as M (34). The result is a force that is normal to the soft axis of the cantilever. A second arrangement is shown in FIG. 4. Here, a film, or particle 39 attached to the cantilever is magnetized with a moment M(40) along the soft axis of the cantilever 42. A magnetic field B (44) is applied normal to the soft axis of the cantilever. This results in a torque N=M.times.B. Thus, with a cantilever of length R, a force F of magnitude F=.vertline.N.vertline./R is applied to the end of the tip perpendicular to the soft axis of the cantilever. This latter method is to be preferred. This is because it is generally easier to obtain a high value of magnetic field than a high value of magnetic field gradient.
OBJECTS AND ADVANTAGES OF THE INVENTION
Accordingly, it is an object of the present invention to provide a microscope in which ac modulation of the gap is obtained by movement of only the force sensing cantilever, so that the modulation may be applied at a high frequency, avoiding spurious resonances.
Another object of the present invention is to use a method of modulation that is consistent with operation in fluids.
Yet another object of the present invention is to produce force-sensing cantilevers that are consistently magnetized with a moment along the soft axis of the cantilever.
These and many other objects and advantages of the present invention will become apparent to those of ordinary skill in the art from a consideration of the drawings and ensuing description of the invention.
SUMMARY OF THE INVENTION
The forgoing objects have been achieved in the scanning force microscope of the present invention. A thin film of a magnetic material is applied to one or both surfaces of a force sensing cantilever. The cantilevers are then placed between the poles of an electromagnet and a magnetizing field applied in the direction of the soft axis of the cantilevers. The field is chosen so as to be bigger than the saturation field for the magnetic film. A small electromagnet is placed in the housing of the microscope so as to generate a field normal to the soft axis of the cantilever. The field is generated by an ac voltage and causes a time varying force to be applied to the cantilever. The corresponding modulation of the cantilever position is sensed by reflection of a laser beam into a position sensitive detector. The magnitude and phase of this signal are determined by a synchronous detector. Images of the sample surface are made at constant force gradient by scanning the cantilever over the surface while adjusting the gap between the probe and sample so as to maintain a constant output from the synchronous detector.





BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic diagram of one prior art scheme for modulating the tip to substrate gap in force microscopy in fluids where the whole sample is moved up and down relative to the probe scanner.
FIG. 2 is a schematic diagram of another prior art scheme where the modulating signal is applied directly to the probe scanner,
FIG. 3 is a diagram of a prior art scheme for placing a magnetic force on a force-sensing cantilever.
FIG. 4 is a diagram illustrating the arrangement used in the present invention: a field normal to the magnetic moment of the cantilever exerts a torque on the cantilever.
FIG. 5 is a schematic diagram illustrating the overall layout of an ac magnetically modulated force sensing microscope constructed according to a presently preferred embodiment of the present invention.
FIG. 6 is a schematic diagram illustrating the scheme used in the present invention for magnetizing the cantilevers and for calibrating the magnetization.
FIG. 7 is a graphical plot illustrating a typical hysteresis loop for a magnetic thin film.





DESCRIPTION OF THE PREFERRED EMBODIMENTS
Those of ordinary skill in the art will realize that the following description of the present invention is illustrative only and is not intended to be in any way limiting. Other embodiments of the invention will readily suggest themselves to such skilled persons from an examination of the within disclosure.
An overall layout of the scanning force microscope according to a presently preferred embodiment of the present invention is shown in FIG. 5. A thin film or particles of magnetic material 46 is applied to the back of a force-sensing cantilever 48 with the direction of the magnetic moment M along the soft axis of the cantilever 48. The cantilever 48 is attached to a scanning transducer 50 which holds it above the surface 52 of a sample 54 which may be submerged in a fluid body 56. A laser beam 58 is reflected from the back of the cantilever 48 into a position-sensitive detector 60 so that deflections of the cantilever 48 may be detected and recorded. A small solenoid 62 is placed near cantilever 48 so as to generate a magnetic field B that is predominantly perpendicular to the soft axis of cantilever 48. For the purpose of modulating the position of the tip 64 of cantilever 48 with respect to the sample surface 52, an alternating current (ac) voltage source 66 is used to drive the solenoid 62. The corresponding modulation level is detected by a synchronous detector 68 which is also driven with the ac signal 66 as a reference.
The ac signal is preferably a sine wave. It is higher in frequency than the highest frequency associated with scanning a pixel, but generally equal to (or less than) the resonant frequency of the force sensing cantilever (which is typically about 50 kHz).
The synchronous detector averages that part of the input signal bearing a constant phase to the reference signal. If the input signal is S(t) and the reference signal (the signal that did the modulation) is A cos(.omega.t), then the synchronous detector forms the averaged product: ##EQU1## where .phi. is a fixed phase shift (which can be set electronically to cancel systematic unwanted phase shifts or to detect the quadrature component of the signal) and .tau. is a time constant for integration of the signal. This time constant is set equal to about the time taken to scan one pixel in the final image. In this way, the averaging does not loose resolution. The modulation period (2.pi./.omega.) must be less than the integration time in order for averaging to occur.
In operation, the microscope height (z height) is controlled by a feedback control loop as is well known to those of ordinary skill in the art. The output of the feedback control loop acts to adjust the output of the synchronous detector so that it remains constant while the z height is adjusted to achieve this. The topographical output of the microscope is the map of adjustments to the z height.
Construction of a suitable solenoid and choices of magnetic materials are described in co-pending U.S. patent application Ser. No. 08/246,035 which is incorporated by reference. According to a presently preferred embodiment of the present invention, the solenoid is made from several hundred turns of pile-wound wire 70 on a Permendur core 72 (available from Eagle Alloys of Jefferson City, Tenn.). This produces a field of about 100 Gauss at a distance of about 3 mm from the pole piece when a current of 500 mA is passed through the coil. Other mechanisms and variants for delivering this magnetic field could also be used as would be known to those of ordinary skill in the art.
An important step in the preparation of the cantilevers 48 is the formation of a controlled magnetic moment. One method for doing this is to place the cantilever in a strong magnetizing field. According to a presently preferred embodiment of the present invention, a film of Cobalt of about 500 angstroms thickness is evaporated onto the cantilever surface. Films of this thickness and composition are relatively easy to magnetize in the plane of the film. The magnetization can be monitored by simultaneous preparation of a film on a test substrate such as a wafer of silicon. This process is illustrated in FIG. 6. The cantilever 74 is coated with a magnetic film 76 and is placed between the pole pieces of an electromagnet 78, 80 with its soft axis lying along the field direction. Magnetization of the thin film 76 can be monitored using a separate test specimen or calibration object, consisting of a silicon wafer 82 coated with an identical thin magnetic film 84. A laser beam 86 from an ellipsometer 88 is used to measure the local magnetization using rotation of the polarization of the incident light 86. The magnetic field is swept as the magnetization of the film is recorded. A typical magnetization curve for such a thin film is shown in FIG. 7. It shows the characteristic hysteresis loop due to the permanent magnetization of the sample at a saturation magnetization M.sub.s which occurs at a saturating field Hs.
A typical value for M.sub.s is 1,400 emu/cm.sup.3 and a typical value for H.sub.s is 400 Gauss. A force sensing cantilever has typical dimensions of 100 .mu.m by 100 .mu.m. Covered with a 500 .ANG. thickness of cobalt film, this gives a volume of 5.times.10.sup.-10 cm.sup.3 of magnetic material. When magnetized to saturation, this yields a moment of 7.times.10.sup.-10 emu. In a field of 100 Gauss normal to the magnetic moment, this results in a torque of 7.times.10.sup.-5 dyne-cm. Thus, at the end of a 100 .mu.m cantilever, the force is 7.times.10.sup.-3 dyne or 7.times.10.sup.-8 N. Thus, for a force-sensing cantilever with a spring constant of 0.1N/m, a reasonable magnetic field can move the tip by up to 100 nm.
Thus, the degree of control is adequate not only for applying modulation to the cantilever (where displacements of 0.01 nm are adequate) but also for controlling instabilities in the cantilever position caused by attractive forces which pull the cantilever into the surface. This is described more fully in U.S. patent application Ser. No. 08/246,035.
While illustrative embodiments and applications of this invention have been shown and described, it would be apparent to those skilled in the art that many more modifications than have been mentioned above are possible without departing from the inventive concepts set forth herein. The invention, therefore, is not to be limited except in the spirit of the appended claims.
Claims
  • 1. A method for magnetizing a thin film of magnetizable material disposed on a force sensing cantilever comprising:
  • placing the thin film of magnetizable material on the force sensing cantilever;
  • placing the force sensing cantilever between two opposite poles of an electromagnet; and
  • applying current to said electromagnet so as to generate a magnetic field between said opposite poles of said electromagnet while said force sensing cantilever is between said opposite poles.
  • 2. A method according to claim 1 further comprising:
  • placing a flat calibration object between said opposite poles during the applying current step.
  • 3. A method according to claim 2 further comprising:
  • using an ellipsometer to obtain a measurement of the magnetization of said flat calibration object; and
  • determining, from said measurement, the magnetization of said force sensing cantilever.
  • 4. A method according to claim 1 further comprising:
  • forming a flat calibration object out of a non-conductive material; and
  • placing a thin film of magnetizable material on the flat calibration object, said film of the same material as the film placed on said force sensing cantilever, said film having the same thickness as the film placed on said force sensing cantilever, and said film having the same overall mass as the film placed on said force sensing cantilever.
CROSS-REFERENCE TO RELATED APPLICATION

This is a divisional of patent application Ser. No. 08/403,238, filed Mar. 10, 1995, now U.S. Pat. No. 5,513,518 which is a continuation in part of U.S. patent application Ser. No. 08/246,035 filed May 19, 1994, now U.S. Pat. No. 5,515,719, in the name of Stuart M. Lindsay and assigned to the assignee of this application. The disclosure of U.S. patent application Ser. No. 08/246,035, entitled "Controlled Force Microscope for Operation in Liquids" is hereby incorporated herein by reference.

STATEMENT AS TO RIGHTS TO INVENTIONS

The invention of the parent patent application was made with Government support under grant N00014-90-J-1455 awarded by the Office of Naval Research and Grant No. DIR-8920053 awarded by the National Science Foundation. The Government may have certain rights in this invention.

US Referenced Citations (114)
Number Name Date Kind
RE33387 Binnig Oct 1990
RE34331 Elings et al. Aug 1993
RE34489 Hansma et al. Dec 1993
4343993 Binnig et al. Aug 1982
4422002 Binnig et al. Dec 1983
4520570 Bednorz et al. Jun 1985
4668865 Gimzewski et al. May 1987
4724318 Binnig Feb 1988
4785177 Besocke Nov 1988
4800274 Hansma et al. Jan 1989
4806755 Duerig et al. Feb 1989
4823004 Kaiser et al. Apr 1989
4837435 Sakuhara et al. Jun 1989
4866271 Ono et al. Sep 1989
4868396 Lindsay Sep 1989
4871938 Elings et al. Oct 1989
4877957 Okada et al. Oct 1989
4889988 Elings et al. Dec 1989
4902892 Okayama et al. Feb 1990
4914293 Hayashi et al. Apr 1990
4924091 Hansma et al. May 1990
4935634 Hansma et al. Jun 1990
4947042 Nishioka et al. Aug 1990
4952857 West et al. Aug 1990
4954704 Elings et al. Sep 1990
4956817 West et al. Sep 1990
4962480 Ooumi et al. Oct 1990
4968390 Bard et al. Nov 1990
4968914 West et al. Nov 1990
4969978 Tomita et al. Nov 1990
4992659 Abraham et al. Feb 1991
4992728 McCord et al. Feb 1991
4999494 Elings Mar 1991
4999495 Miyata et al. Mar 1991
5003815 Martin et al. Apr 1991
5009111 West et al. Apr 1991
5017010 Mamin et al. May 1991
5018865 Ferrell et al. May 1991
5025658 Elings et al. Jun 1991
5047633 Finlan et al. Sep 1991
5051646 Elings et al. Sep 1991
5066858 Elings et al. Nov 1991
5077473 Elings et al. Dec 1991
5081390 Elings Jan 1992
5103095 Elings et al. Apr 1992
5107113 Robinson Apr 1992
5107114 Nishioka et al. Apr 1992
5117110 Yasutake May 1992
5120959 Tomita Jun 1992
5141319 Kajimura et al. Aug 1992
5142145 Yasutake Aug 1992
5144833 Amer et al. Sep 1992
5155361 Lindsay Oct 1992
5155715 Ueyema et al. Oct 1992
5157251 Albrecht et al. Oct 1992
5166516 Kajimura Nov 1992
5168159 Yagi Dec 1992
5189906 Elings et al. Mar 1993
5198715 Elings et al. Mar 1993
5202004 Kwak et al. Apr 1993
5204531 Elings et al. Apr 1993
5206702 Kato et al. Apr 1993
5210410 Barrett May 1993
5224376 Elings et al. Jul 1993
5229606 Elings et al. Jul 1993
5231286 Kajimura et al. Jul 1993
5237859 Elings et al. Aug 1993
5245863 Kajimura et al. Sep 1993
5247186 Toda Sep 1993
5253516 Elings et al. Oct 1993
5257024 West Oct 1993
5258107 Yoshida et al. Nov 1993
5260567 Kuroda et al. Nov 1993
5260622 West Nov 1993
5260824 Okada et al. Nov 1993
5262643 Hammond et al. Nov 1993
5266801 Elings et al. Nov 1993
5266896 Rugar et al. Nov 1993
5266897 Watanuki et al. Nov 1993
5267471 Abraham et al. Dec 1993
5274230 Kajimura et al. Dec 1993
5276324 Ohtaki et al. Jan 1994
5280341 Nonnenmacher et al. Jan 1994
5283437 Greschner et al. Feb 1994
5283442 Martin et al. Feb 1994
5286977 Yokoyama et al. Feb 1994
5289004 Okada et al. Feb 1994
5291775 Gamble et al. Mar 1994
5293042 Miyamoto Mar 1994
5294804 Kajimura Mar 1994
5296704 Mishima et al. Mar 1994
5298975 Khoury et al. Mar 1994
5304924 Yamano et al. Apr 1994
5306919 Elings et al. Apr 1994
5307693 Griffith et al. May 1994
5308974 Elings et al. May 1994
5314254 Yashar et al. May 1994
5314829 Coles May 1994
5317153 Matsushiro et al. May 1994
5319960 Gamble et al. Jun 1994
5319977 Quate et al. Jun 1994
5321977 Clabes et al. Jun 1994
5323003 Shido et al. Jun 1994
5324935 Yasutake Jun 1994
5325010 Besocke et al. Jun 1994
5329808 Elings et al. Jul 1994
5331589 Gambino et al. Jul 1994
5338932 Theodore et al. Aug 1994
5354985 Quate Oct 1994
5357105 Harp et al. Oct 1994
5360977 Onuki et al. Nov 1994
5388452 Harp et al. Aug 1995
5461907 Tench et al. Oct 1995
5468959 Tohda et al. Nov 1995
Foreign Referenced Citations (3)
Number Date Country
63-85461 Aug 1988 JPX
5-203626 Nov 1993 JPX
6-59004 Jun 1994 JPX
Non-Patent Literature Citations (35)
Entry
A. Stewart, et al., "Use of Magnetic Forces to Control Distance in a Surface Force Apparatus", 1990, Meas. Sci. Technol., vol. 1, pp. 1301-1303.
P.S. Jung, "Novel Stationary-Sample Atomic Force Microscope with Beam-Tracking Lens", Dec. 14, 1992.
Stephen A. Joyce, "Mechanical Relaxation of Organic Monolayer Films Measured by Force Microscopy", Physical Review Letters, vol. 68(18), pp. 2790-2793, May 4, 1992.
G. Binnig, "Single-Tube Three-Dimensional Scanner for Scanning Tunneling Microscopy", Rev. Sci. Instrum. 57 (8), pp. 1688-1689, Aug. 1986.
B. Drake, "Imaging Crystals, Polymers, and Processes in Water with the Atomic Force Microscope", Science, vol. 243, pp. 1586-1589, Mar. 24, 1989.
Richard Sonnenfeld, "Atomic-Resolution Microscopy in Water", Science, vol. 232, pp. 211-213, Apr. 11, 1986.
P. Davidson, "A New Symmetric Scanning Tunneling Microscope Design", Journal of Vacuum Science & Technology: Part A, pp. 380-382, Mar./Apr. 1986.
O. Marti, "Atomic Force Microscopy of Liquid-covered Surfaces: Atomic Resolution Images", Appl. Phys. Lett. 51(7), pp. 484-486, Aug. 17, 1987.
M.D. Kirk, "Low Temperature Atomic Force Microscopy", Rev. Sci. Instrum. 59(6), pp. 833-835, Jun. 1988.
Richard Sonnenfeld, "Semiconductor Topography in Aqueous Environments: Tunneling Microscopy of Chemomechanically Polished (001) GaAs", 320 Applied Physics Letters 50(24), pp. 1742-1744, Jun. 15, 1987.
S.A. Chalmers, "Determination of Tilted Superlattice Structure by Atomic force Microscopy", 320 Applied Physics Letters 55(24), pp. 2491-2493, Dec. 11, 1989.
O. Marti, "Control Electronics for Atomic Force Microscopy", Rev. Sci. Instrum., vol. 59(6) pp. 836-839, Jun. 1988.
Exhibit C, p. 691, copyright 1986.
Exhibit B, Paul West, "Chemical Applications of Scanning Tunneling Microscopy", IBM J. Res. Develop. vol. 30(5), pp. 484-490, Sep. 1986.
Exhibit A, John Adam Kramer, Candidacy Report, pp. 1-48, May 21, 1985.
C. Mathew Mate, "Research Report- Determination of Lubricant Film Thickness on A Particulate Disk Surface by Atomic Force Microscopy", Apr. 25, 1989.
Y. Martin, "Atomic Force Microscope-Force Mapping and Profiling on a sub 100-A Scale", J. Appl. Phys. 61(10), May 15, 1987.
H. Hanselmann, "Implementation of Digital Controllers-A Survey", Automatica, vol. 23(1) pp. 7-32, 1987.
B.B. Damaskin, "Comprehensive Treatise of Electrochemistry vol. 1: Chapter 8: The Absorption of Organic Molecules", pp. 353-395.
G. Travaglini, "Scanning Tunneling Microscopy on Biological Matter", Surface Science 181, pp. 380-390, 1987.
F. Ohnesorge, "True Atomic Resolution by Atomic Force Microscopy Through Repulsive and Attractive Forces", Science vol. 260, pp. 1451-1456, Jun. 4, 1993.
Allan J. Melmed, "Art and Science and other Aspects of Making Sharp Tips", J. Vac. Sci. Technol. B 9(2), pp. 601-608, Mar./Apr. 1991.
Inga Holl Musselman, "Platinum/Iridium Tips with Controlled Geometry Tunneling Microscopy", J. Vac. Sci. Technol. A, vol. 8(4), pp. 3558-3562 Jul./Aug. 1990.
J.P Ibe, "On the Electrochemical Etching of Tips for Scanning Tunneling Microscopy", J. Vac. Sci. Technol. A, vol. 8(4), pp. 3570-3575, Jul./Aug. 1990.
L.A. Nagahara, "Preparation and Characterization of STM Tips for Electrochemical Studies".
Martin Specht, "Simultaneous Measurement of Tunneling Current and Force as a Function of Position Through A Lipid Film on A Solid Substrate", Surface Science Letters 257, pp. L653-L658, 1991.
M. Brede, "Brittle Crack Propagation in Silicon Single Crystals", J. Appl. Phys. 70(2), pp. 758-771, Jul. 15, 1991.
S.M. Hu, "Stress-Related Problems in Silicon Technology", J. Appl. Phys. 70(6), pp. R53-R80, Sep. 15, 1991.
Hansma, et al., "Atomic Force Microscope", J. App. Phys., 76(2) Jul. 15, 1994 pp. 796-799.
Mazur, et al., "Resonant Tunneling Bands and Electrochemical Reduction Potentials", Abstract, Washington State University, pp. 1-16.
Shea, et al., "Atomic Force Microscopy of Local Compliance at Solid-Liquid Interfaces" Abstract, Cambridge Univeristy; pp. 1-13.
Putman, et al., "Viscoeleasticity of living cells allows high-resolution imaging by tapping mode atomic force microscopy", Department of Applied Physics, University of Twente, Jan. 4, 1994.
D.A. Grigg, et al., "Tip-sample forces in scanning probe micrscopy in air and vacuum,"J.Vac. Sci. Technol. A 10(4), Jul./Aug. 1992, pp. 680-683.
Lindsay, et al. "Scanning Tunneling microscopy and atmoic force microscopy studies of biomaterials at a liquid-solid interface", J. Vac. Sci. Technol. A., vol. 11, No. 4, Jul./Aug. 1993, pp. 808-815.
Jarvis et al., "A Novel Force Microscope and Point Contact Probe", Rev. Sci. Instrum., vol. 64, No. 12, Dec. 1993, pp. 3515-3520.
Divisions (1)
Number Date Country
Parent 403238 Mar 1995
Continuation in Parts (1)
Number Date Country
Parent 246035 May 1994