Forming method for polymeric laminated wafers comprising different film materials

Information

  • Patent Grant
  • 8002935
  • Patent Number
    8,002,935
  • Date Filed
    Monday, March 6, 2006
    18 years ago
  • Date Issued
    Tuesday, August 23, 2011
    13 years ago
Abstract
A method of making a polymeric laminated wafer comprising different film materials that are softenable and formable at different softening temperatures corresponding with the film materials. Also disclosed is a laminated wafer wherein a first layer has different thermal properties than a second layer of the wafer.
Description
FIELD OF THE INVENTION

The present invention relates to a method for forming polymeric laminates.


BACKGROUND OF THE INVENTION

Formed wafers are curved laminates often produced as an intermediate step to a completed lens. For example, a wafer may be produced having a delicate functional layer, such as a polarizing or photochromic layer, sandwiched by a first, protective layer and a second, base layer. The wafer is then formed to have a base curve. The formed wafer is then placed in an injection mold chamber where a molten lens material is injected behind the wafer to form a lens against the base layer of the wafer. In the alternative, the formed wafer can be used simply as a plano lens by itself, e.g., as a piano polarized or photochromic sunglass lens or sungoggle, i.e., without injecting a molten lens material behind the wafer. An example of such a wafer is disclosed in publication EP 0 299 509 A2 by Kawaki et al., incorporated by reference herein in its entirety.


The wafers are typically formed via a process that includes first heating the polymeric wafer to a softening temperature. This heating step may be accomplished in a variety of ways such as with hot air or heated forming molds. Next the softened wafer is placed in a forming cup and either pressed or sucked into the forming cup. The wafer is held in the cup until it sets, thus assuming the shape of the forming cup. The wafer is then removed and cooled to ambient temperature.


Typical heating or softening temperatures for use in forming the laminated wafer are determined by the thermal properties of the materials chosen for producing the laminated wafer. One example of materials that have been previously used in making laminated wafers is polycarbonate resin films or sheets. Polycarbonate films or sheets include general aromatic polycarbonate resin sheets prepared from bisphenols (e.g., bisphenol A) and phosgene or carbonic esters and sheets prepared from transparent copolycarbonate resins or transparent resin compositions containing other resins. If desired, these polycarbonate sheets may thereafter be coated or otherwise treated with a functional coating, such as heat-formable hard coat, an anti-fogging coat, an infrared-reflective or infrared-absorbable coat, an ultra-violet reflective or ultra-violet absorbable coat or other similar functional coatings that are known in the art.


Other materials contemplated for use in making laminated wafers may include adhesives or functional materials such as polarizing films or photochromic films. Examples of adhesives that are contemplated for use in laminated wafers may include PVA adhesives or urethane adhesives that are commonly known in the polycarbonate lens industry. Examples of a polarizing film suitable for use in laminated wafers include a polarizing film containing components such as polyvinyl alcohol polymer (PVA) film, which is monoaxially stretched before dyeing, or dyed before monoaxial stretching, and subjected to fixing treatment with a boron compound (in some cases, the dyeing and fixing treatment are conducted simultaneously). Other examples of functional materials may include polyester polarizers or photochromic polarizing films.


Once the functional layer, such as a polarizing PVA film, has been incorporated, then a protective film having optical transparency and mechanical strength is normally laminated on each surface or one surface thereof. Examples of protective layer materials would typically include materials such as cellulose tri-acetate (CTA) film, cellulose acetate butyrate (CAB) and other cellulose resins, cyclic olefin, polyesters, such as polyethylenetelephthalate (PET) and its alloy or modified resin, polycarbonate alloy and copolymer with other polymer(s), polyethylenenaphthalate (PEN), and acrylic resins, such as polymethyl methacrylate (PMMA).


Laminated wafers having the above-described materials are thereafter formed into curved laminates. This process is commonly accomplished using a machine, such as those made by Lema of Italy. The Lema machines have a thermostatically-controlled electric heating chamber with an air blower, and forming cups mounted on a rotating turret. A vacuum hole at the bottom of each forming cup allows the wafers to be sucked into the cups and held in place with a vacuum. Vacuum control valves hold the wafers until they reach a designated position on the rotating turret at which time they are released.


Other machines that are suitable for use in making laminated wafers are produced by Japanese companies such as Wintec and Fuji Kasei. These are similar to the Lema machine but also include wafer pre-heating units, pick and place mechanisms, and plungers to mechanically press the wafers into the vacuum cups. Some machines also have a cooling conveyor or other apparatus used to achieve desired formation(s) of selected wafer components.


These machines perform adequately when forming a wafer that has a protective layer and a base layer having similar properties and/or materials. However, they are found to be deficient to form wafers where the protective layer is different than its base layer. Materials having similar properties, such as softening properties, can be heated and formed uniformly at a uniform temperature. For example, the softening temperature of a laminated wafer having a protective layer and a base layer comprised entirely of polycarbonate materials, or similar-propertied materials, is at or near approximately 285° F. Therefore, placing the laminated wafer in a heated environment possessing a uniform temperature of approximately 285° F. over a prescribed amount of time will result in a softening and formation of a uniformly curved laminated wafer, appropriate for use thereafter in a manufacturing process, such as injection molding. However, preparing a laminated wafer where one or more layers have properties and/or materials that are different from other layers, and exposing such a wafer to a uniform heat that is outside a prescribed or required softening temperature for one of the materials will result either in inadequate softening and forming (e.g. when the temperature is too low) or, alternatively, a softening of the material to a point of damaging the material (e.g. when the temperature is too high).


One example of a laminated wafer having different layer materials is a wafer having a CAB film as a protective layer, a PVA film as a polarizer functional layer, and a polycarbonate film as a base layer. The optimum softening and forming temperature for the polycarbonate film base layer occurs at or near 285° F. At temperatures substantially below this temperature (e.g. at 270° F. or below), polycarbonate does not undergo adequate softening due to its chemical and structural properties, namely its thermal properties. Alternatively, at temperatures above 260° F., CAB becomes too soft because the temperature is too high to maintain the chemical and structural integrity of the material due to its underlying thermal properties. Thus, the aforementioned machines are unable to form a wafer including, for example, a CAB film protective layer and a polycarbonate film base layer because there is no operational temperature window that satisfies both layers.


There is thus a need for a machine that is able to soften and form laminated wafers having different layers of materials with diverse thermal properties.


OBJECTS AND SUMMARY OF THE INVENTION

In view of the foregoing, it is an object of the present invention to provide a process of making a laminated wafer that overcomes the limitations of the prior art.


It is another object to provide a process wherein the method of making the present invention is efficient and economical.


These and other objects not specifically enumerated here are addressed by the present invention wherein one object of the present invention provides a method for forming a laminated wafer having at least a first layer and a second layer comprising placing the wafer in a heated environment having a first temperature capable of softening the first layer, exposing the second layer, and not the first layer, to a second temperature higher than the first temperature, the second temperature capable of softening the second layer, and forming the laminated wafer into a desired shape.


Another object of the present invention relates to a laminated wafer comprising different materials that are formed at different softening temperatures.





DESCRIPTION OF THE DRAWINGS


FIG. 1 is a cross-sectional view of a typical laminated wafer to which the present invention is directed;



FIG. 2 is a cross-sectional view of the wafer of FIG. 1 having been formed in accordance with the methods of the present invention;



FIG. 3 is a plan view of an embodiment of a device useable in practicing the method of the present invention.





DESCRIPTION OF THE INVENTION

The present invention provides a method for forming wafers whereby different temperatures are applied to either side of the wafer, in which each side has different materials and/or thermal properties. An example of such a wafer is shown in FIG. 1. The wafer 10 is laminated and includes a first layer 12 and a second layer 14. Sandwiched between the first layer 12 and the second layer 14 is a functional layer 16.


One embodiment of the wafer having a first layer 12 and a second layer 14, includes a first layer comprising CAB film and a second layer 14 comprising a polycarbonate film. CAB film is commercially available by companies such as Kodak (sold under the name KODACEL®) and comes in various grades. In another embodiment, any material possessing low to no birefringence at Tg between 100° C. and 150° C., such as CAB film, is a good candidate for a first layer 12 (also referred to as a protective layer) of the wafer 10. As for the polycarbonate second layer 12, commercial sources of polycarbonate film include GE (LEXAN® T2FOQ), Teijin (PANLITE® 1151, 2151), and Bayer (Makrofoil Del.). Modified polycarbonates and polycarbonate alloy film would also be well-suited for use as layers in the present invention.


The functional layer 16 typically gives the lens to which the wafer 10 will be applied a desired property. For example, the functional layer 16 may include a photochromic or polarizing layer, such as a polyester polarizer, a multi-layer film for reflecting and transmitting a specific wave length, or a combination of these properties, as found in a photochromic polarizing layer. The first layer 12 is often a protective layer that protects the functional layer 16 from the elements. The second layer 14 is often referred to as a base layer and, in one embodiment, is eventually fused to a lens. However, the present invention contemplates interchangeable use of materials for a first layer and a second layer of a laminated wafer, as herein described.



FIG. 2 shows the wafer 10 after it has been formed. The wafer 10 has been curved to match the curve either of a piano lens or a curve of a lens blank to which the wafer may be adhered. Formed wafers 10 are often used in manufacturing processes such as injection molding operations, such as those employed in production of ophthalmic lenses. The curve of the wafer 10 thus substantially matches the curve of the inside mold cavity wall. In this case, the first layer 12 would be placed against the anterior wall of the mold and the lens material is injected into the posterior side of the mold against the second layer 14.


Referring now to FIG. 3, the machine of the present invention includes a heating chamber 17 containing a turret unit 18 having a plurality of vacuum suction forming cups or molds 20 for receiving the wafers 10. The wafer 10 is placed in a forming cup 20 and the vacuum level is set in the heating chamber 17 at 10-760 mmHg, and most preferably, 100-650 mmHg.


The heating chamber 17 also contains electric heaters and a convection blower (not shown). This heating chamber 17 provides a first heating temperature that is distributed uniformly throughout the heating environment. Most preferably, the first heating temperature will be set to a temperature sufficient to soften a first layer of wafer material, based on its thermal properties (typically, a lower temperature than a second temperature that is required to soften a second layer of wafer material). The heating chamber 17 may further provide one temperature controller that maintains the air temperature throughout the heating chamber at a desired setting (e.g., a first temperature) as well as the temperature of the forming cups 20. In a preferred embodiment, the heating chamber 17 will provide an air temperature that is set near the first layer material's glass transition temperature (Tg) or slightly lower (5-15° C.) than Tg.


The heating chamber 17 further contains a second source for introducing heat into the chamber 17. This second heat source enables the chamber 17 to direct heat specifically to one layer of each wafer and thereby heat that layer with heat at a temperature different from the air temperature otherwise being generated by the chamber 17. This second heat source therefore allows two different temperatures to be imparted onto the wafers. In one embodiment, the chamber 17 heats (through its first heat source (e.g. electrical heater and convection blower)) the protective and functional layers 12, 16 to a first air temperature in the chamber 17 while the base layer 14 is heated to a higher temperature from the second heat source.


The second heating source may be provided by heating devices such as infrared heaters, directed hot air jet(s), or hot metal plunger(s) that are placed in contact with a second (or, higher softening temperature) material, holding a wafer between the lower temperature moving, forming cups 20 and hot metal plungers (not shown).


In a preferred embodiment of the present invention, the second source of heat is provided by infrared heaters 22 as shown in FIG. 3. The infrared heaters 22 are positioned inside the heating chamber 17 above the moving, forming cups 20. Infrared heaters 22 are selected such that they will emit infrared rays having a wavelength that is efficiently absorbed by the base layer 14 material and not passed through to the functional layers 16 and/or the protective layer 12 of each wafer. For example, a polycarbonate film has been shown to pass infrared rays that are between 800 to 2300 nm (near infrared) but absorb infrared having a wavelength longer than 2300 nm (far infrared). Thus, the infrared heaters 22 are selected to emit infrared rays in the far infrared range rather than in the near infrared range, as corresponding with the thermal properties of the selected wafer materials. One example of an infrared heater 22 contemplated for use in the present invention is a Watlow Quartz Heater, having a ⅜″ diameter×19 inches long and further having a 204 volt×15 amp maximum power capacity. A quartz infrared heater 22 of these specifications emits a peak wavelength of 2500 nm, which can be adjusted to a desired percent output based on the selected wafer material for heating. For example, a quartz infrared heater set to 90% output would emit a peak wavelength of about 2300 nm.


Further, if necessary, filters may be used between the infrared heaters and the wafers to ensure the functional and protective layers 16, 12 do not encounter the infrared rays. Infrared rays will be absorbed or passed at different wavelengths, based on the properties of the selected wafer materials. Any directed energy sources, as described herein, that produce the same practical effect of softening and/or forming a wafer with different materials, are therefore contemplated for use in the present invention.


In a preferred embodiment as shown in FIG. 3, the heating chamber 17 has a rotating turret 18 which further includes support arms extending to the forming, molding cups 20 that support each wafer 10. The vacuum suction of the forming cup 20 holds the wafer 10 to the forming cup 20 while the turret 18 rotates the wafers through the heating chamber in a predetermined heating cycle. In this embodiment, wafers 10 are rotated through the heating chamber 17 at a cycle rate correlating to the number of wafers 10 to be heated. For example, when one wafer 10 is placed into the heating chamber 17 and run through a cycle, the cycle duration is 25 seconds times 1 wafer 10, resulting in a 25-second cycle. However, when ten wafers 10 are placed in 10 forming cups 20 (as shown in FIG. 10) in the heating chamber 17 and run through a cycle, the total cycle time or cycle duration is 25 seconds times 10 wafers, resulting in a 250-second cycle time.


This process may further be accomplished by manual or other automated mechanisms that promote forming or curving of wafers in any environment that permits different softening conditions or temperatures for different material properties of the layers, and are thus not limited to the illustrative examples of heating chambers as described and disclosed herein.


EXAMPLES

The device and method of forming polymeric laminated wafers comprising different film materials of the present invention will now be described in more detail in reference to examples, which are for illustrative purposes only and should not in any way be construed as a limitation upon the scope of the invention. The following are examples of wafers made using the present invention and comparative examples using various prior art methods. The first two comparative examples use a wafer having base layers and protective layers that are comprised of the same material in order to demonstrate the required settings to achieve the desired base form. The second two comparative examples attempt to form a wafer using the materials used in the Example.


Example 1

A wafer produced by Polaroid Corporation having a polarizer laminate comprising 1.35 mil CAB protective layer (KODACEL® brand CAB film, product code K7755), 1.2 mil PVA polarizer layer (custom formulated from raw material PVA: Vinylon made by Kuraray of Japan) and 10 mil polycarbonate base layer was punched into an 80 mm diameter disc and placed in a Lema P-10 forming machine with a quartz infrared heater 3 inches above the forming cups with a power controller. Air temperature was set to 225° F., bringing the cup temperature to approximately 220° F. The infrared heater power, having a power capacity of 204 volt×15 amp maximum (thereby a 2500 nm maximum wavelength output), was set to 90%. Cycle time for one wafer was set at 25 seconds and the forming cup was a 6 base.


Result: The wafer was formed to 6 base without any damage to the CAB protective layer of the wafer or to the adhesive that joins the layers of the wafer together.


Comparative Example 1A

A wafer made by Fuji Kasei of Japan having polycarbonate as a base layer, a PVA polarizing element as a functional layer, and polycarbonate as a protective layer was formed using a Lema P-10 forming machine without using infrared heating. The temperature was set to 235° F. Cycle time for one wafer was set at 25 seconds.


Result: The wafer stayed almost flat and was not formed to a 6 base due to insufficient heat for forming the polycarbonate.


Comparative Example 1B

A wafer made by Fuji Kasei of Japan having polycarbonate as a base layer, a PVA polarizing element as a functional layer, and polycarbonate as a protective layer was formed using a Lema P-10 forming machine without using infrared heating. The temperature was set to 285° F. Cycle time for one wafer was set at 25 seconds.


Result: The wafer was successfully formed to a 6 base.


Comparative Example 1C

A wafer produced by Polaroid Corporation having a polarizer laminate comprising 1.35 mil CAB protective layer, 1.2 mil PVA polarizer layer and 10 mil polycarbonate base layer was punched into an 80 mm diameter disc and placed in a Lema P-10 forming machine without the presence of infrared heaters. Air temperature was set to 235° F. and the cycle time for one wafer was set at 25 seconds and the forming cup was a 6 base.


Result: The wafer stayed almost flat and was not formed to a 6 base due to insufficient heat to the polycarbonate layer.


Comparative Example 1 D

A wafer produced by Polaroid Corporation having a polarizer laminate comprising 1.35 mil CAB protective layer, 1.2 mil PVA polarizer layer and 10 mil polycarbonate base layer was punched into an 80 mm diameter disc and placed in a Lema P-10 forming machine without the presence of infrared heaters. Air temperature was set to 285° F. and the cycle time for one wafer was set at 25 seconds and the forming cup was a 6 base.


Result: The wafer was badly curled and delaminated due to excessive heat to the CAB layer.


Example 2

A polarizing wafer produced by Shin-wha comprising a 1.35 mil CAB protective layer, a 1.2 mil PVA polarizer layer, and a 12 mil polycarbonate layer was punched into an 86 mm disc and formed using a Lema P-10 fitted with two quartz infrared heaters 3 inches above the forming cups with independent power controllers. The air temperature was set to 245° F. resulting in an approximate cup temperature of 240° F. The cycle time for one wafer was set to 15 seconds and the infrared heater, having a power capacity of 204 volt×15 amp maximum (thereby a 2500 nm maximum wavelength output) was set to 90% for the first heater and 70% for the second heater. The forming cup had a 4.25 base curve.


Result: The wafer was formed to a 4.25 base curve without any damage to the CAB protective layer or the PVA polarizer adhesive layer.


Example 3

An experiment was conducted to see if a wafer could be re-formed using the present invention. A polarizing wafer produced by Shin-wha comprising a 1.35 mil CAB protective layer, a 1.2 mil PVA polarizer layer, and a 12 mil polycarbonate layer was punched into an 86 mm disc and formed using a Lema P-10 fitted with two quartz infrared heaters 3 inches above the forming cups with independent power controllers. The air temperature was set to 245° F. resulting in an approximate cup temperature of 240° F. The cycle time for one wafer was set to 15 seconds and the infrared heater, having a power capacity of 204 volt×15 amp maximum (thereby a 2500 nm maximum wavelength output), was set to 90% for the first heater and 70% for the second heater. The forming cup had a 4.25 base curve. This wafer that was formed to a 4.25 base curve was placed back into the Lema machine and exposed to another cycle as previously described, with the exception that this time, the formed wafer was placed in a cup having an 8.00 base curve. The temperature settings remained the same with the cycle time adjusted to 13 seconds.


Result: The wafer was re-formed to 8.00 base without any damage to the CAB protective layer or the PVA polarizer layer.


Based on these illustrative examples, one skilled in the art would conclude that this method enables forming of laminates having different materials with varying softening temperatures on either side of the wafer. This invention may be applied for thermal forming of various polymeric film laminates consisting of different films having varying optimum forming temperatures, which would otherwise be very difficult, if not impossible to form using conventional forming methods.


Although the invention has been described in terms of particular embodiments and applications, one of ordinary skill in the art, in light of this teaching, can generate additional embodiments and modifications without departing from the spirit of or exceeding the scope of the claimed invention. Accordingly, it is to be understood that the drawings and descriptions herein are proffered by way of example to facilitate comprehension of the invention and should not be construed to limit the scope thereof.

Claims
  • 1. A method for forming a laminated wafer comprising the following steps in the sequence set forth: (a) placing the laminated wafer having at least a cellulose resin protective layer and a polycarbonate base layer in a heated environment having a first temperature capable of softening at least the base layer;(b) exposing the base layer to heat at a second temperature higher than the first temperature; and(c) allowing the laminated wafer to form into a desired shape.
  • 2. The method of claim 1, wherein the step of exposing the base layer to heat at a second temperature higher than the first temperature comprises directing heat at the base layer and not to said first protective layer.
  • 3. The method of claim 2, wherein the directing of heat at the base layer includes directing infrared rays at the base layer.
  • 4. The method of claim 1, wherein the step of placing the laminated wafer having at least a cellulose resin protective layer and a polycarbonate base layer in a heated environment having a first temperature capable of softening at least the protective layer comprises placing the wafer in a heated chamber of a forming machine.
  • 5. A method of forming a laminated wafer comprising the following steps in the sequence set forth: (a) heating a cellulose resin protective layer of said laminated wafer to a first temperature equal at least to a softening temperature of the first the cellulose resin protective layer;(b) heating a polycarbonate base layer of said laminated wafer to a second temperature equal at least to a softening temperature of the polycarbonate base layer, the second temperature being higher than the first temperature; and(c) forming the laminated wafer into a desired shape.
  • 6. The method of claim 5, wherein heating a cellulose resin protective layer comprises heating a CAB film layer and wherein the CAB film layer is heated to a softening temperature of about 220° F.
  • 7. The method of claim 5, wherein heating a polycarbonate base layer of said laminated wafer to a second temperature at least equal to a softening temperature of a second the polycarbonate base layer comprises heating at least to a softening temperature of about 285° F.
CROSS-REFERENCE TO RELATED APPLICATIONS

This invention is related to and claims priority from U.S. provisional application Ser. No. 60/658,800 filed on Mar. 4, 2005 entitled Forming Method For Polymeric Laminated Wafers Comprising Different Film Materials, which is incorporated herein by reference.

US Referenced Citations (201)
Number Name Date Kind
2443286 Weston Jun 1948 A
2618200 Clave et al. Nov 1952 A
3051054 Crandon Aug 1962 A
3560076 Ceppi Feb 1971 A
3711417 Schuler Jan 1973 A
3786119 Ortlieb Jan 1974 A
3833289 Schuler Sep 1974 A
3846013 Cohen Nov 1974 A
3877798 Tolar et al. Apr 1975 A
3878282 Bonis et al. Apr 1975 A
3940304 Schuler Feb 1976 A
3963679 Ullrich et al. Jun 1976 A
3988610 Street Oct 1976 A
3989676 Gerkin et al. Nov 1976 A
4008031 Weber Feb 1977 A
4012232 Uhlmann et al. Mar 1977 A
4035213 Thoma et al. Jul 1977 A
4035524 Fritsch Jul 1977 A
4035527 Deeg Jul 1977 A
4046586 Uhlmann et al. Sep 1977 A
4085919 Sullivan Apr 1978 A
4091057 Weber May 1978 A
4106861 Brewer et al. Aug 1978 A
4160853 Ammons Jul 1979 A
4166043 Uhlmann et al. Aug 1979 A
4170567 Chu et al. Oct 1979 A
4211590 Steward et al. Jul 1980 A
4251476 Smith Feb 1981 A
4268134 Gulati et al. May 1981 A
4364878 Laliberte et al. Dec 1982 A
4367170 Uhlmann et al. Jan 1983 A
4409169 Bartholdsten et al. Oct 1983 A
4440672 Chu Apr 1984 A
4442061 Matsuda et al. Apr 1984 A
4490495 Weber Dec 1984 A
4495015 Petcen Jan 1985 A
4519763 Matsuda et al. May 1985 A
4540534 Grendol Sep 1985 A
4590144 Schornick et al. May 1986 A
4628134 Gould et al. Dec 1986 A
4645317 Frieder et al. Feb 1987 A
4650533 Parker et al. Mar 1987 A
4679918 Ace Jul 1987 A
4699473 Chu Oct 1987 A
4756973 Sakagami et al. Jul 1988 A
4767647 Bree Aug 1988 A
4781452 Ace Nov 1988 A
4793703 Fretz, Jr. Dec 1988 A
4828769 Maus et al. May 1989 A
4839110 Kingsbury Jun 1989 A
4867553 Frieder Sep 1989 A
4873029 Blum Oct 1989 A
4882438 Tanaka et al. Nov 1989 A
4883548 Onoki Nov 1989 A
4889412 Clere et al. Dec 1989 A
4889413 Ormsby et al. Dec 1989 A
4892403 Merle Jan 1990 A
4892700 Guerra et al. Jan 1990 A
4898706 Yabe et al. Feb 1990 A
4900242 Maus et al. Feb 1990 A
4917851 Yamada et al. Apr 1990 A
4927480 Vaughan May 1990 A
4933119 Weymouth, Jr. Jun 1990 A
4944584 Maeda et al. Jul 1990 A
4955706 Schmidthaler et al. Sep 1990 A
4960678 Tanaka et al. Oct 1990 A
4961894 Yabe et al. Oct 1990 A
4962013 Tateoka et al. Oct 1990 A
4968545 Fellman et al. Nov 1990 A
4969729 Merle Nov 1990 A
4985194 Watanabe Jan 1991 A
4992347 Hawkins et al. Feb 1991 A
4994208 McBain et al. Feb 1991 A
5015523 Kawashima et al. May 1991 A
5017698 Machida et al. May 1991 A
5049321 Galic Sep 1991 A
5049427 Starzewski et al. Sep 1991 A
5051309 Kawaki et al. Sep 1991 A
5073423 Johnson et al. Dec 1991 A
5106998 Tanaka et al. Apr 1992 A
5120121 Rawlings et al. Jun 1992 A
5130058 Tanaka et al. Jul 1992 A
5147585 Blum Sep 1992 A
5149181 Bedford Sep 1992 A
5175201 Forgione et al. Dec 1992 A
5188787 King et al. Feb 1993 A
5214453 Giovanzana May 1993 A
5223862 Dasher et al. Jun 1993 A
5246989 Iwamoto et al. Sep 1993 A
5252450 Schwerzel et al. Oct 1993 A
5266447 Takahashi et al. Nov 1993 A
5268231 Knapp-Hayes Dec 1993 A
5286419 Van Ligten et al. Feb 1994 A
5288221 Stoerr et al. Feb 1994 A
5292243 Gibbemeyer Mar 1994 A
5327180 Hester, III et al. Jul 1994 A
5336261 Barrett et al. Aug 1994 A
5349065 Tanaka et al. Sep 1994 A
5391327 Ligas et al. Feb 1995 A
5405557 Kingsbury Apr 1995 A
5430146 Tanaka et al. Jul 1995 A
5433810 Abrams Jul 1995 A
5434707 Dalzell et al. Jul 1995 A
5435963 Backovan et al. Jul 1995 A
5449558 Hasegawa et al. Sep 1995 A
5523030 Kingsbury Jun 1996 A
5531940 Gupta et al. Jul 1996 A
5631720 Guglielmetti et al. May 1997 A
5658502 Hughes Aug 1997 A
5699182 Alfekri Dec 1997 A
5702645 Hughes Dec 1997 A
5702813 Murata et al. Dec 1997 A
5708063 Imura et al. Jan 1998 A
5728758 Smith Mar 1998 A
5751481 Dalzell et al. May 1998 A
5757459 Bhalakia et al. May 1998 A
5770115 Misura Jun 1998 A
5800744 Munakata Sep 1998 A
5827614 Bhalakia et al. Oct 1998 A
5840926 Hughes Nov 1998 A
5851328 Kohan Dec 1998 A
5851585 Gupta et al. Dec 1998 A
5854710 Rao et al. Dec 1998 A
5856860 Bhalakia et al. Jan 1999 A
5872648 Sanchez et al. Feb 1999 A
5951939 Chernyak et al. Sep 1999 A
6025026 Smith et al. Feb 2000 A
6068797 Hunt May 2000 A
6074579 Greshes Jun 2000 A
6083597 Kondo Jul 2000 A
6096246 Chan et al. Aug 2000 A
6107395 Rosthauser et al. Aug 2000 A
6113812 Hughes Sep 2000 A
6113813 Goudjil Sep 2000 A
6114437 Brown et al. Sep 2000 A
6138286 Robrahn et al. Oct 2000 A
6145984 Farwig Nov 2000 A
6146578 Van Ert et al. Nov 2000 A
6150430 Walters et al. Nov 2000 A
6165392 Kobuchi et al. Dec 2000 A
6166129 Rosthauser et al. Dec 2000 A
6177032 Smith et al. Jan 2001 B1
6180033 Greshes Jan 2001 B1
6187444 Bowles, III et al. Feb 2001 B1
6254712 Enlow et al. Jul 2001 B1
6256152 Coldrey et al. Jul 2001 B1
6296785 Nelson et al. Oct 2001 B1
6309313 Peter Oct 2001 B1
6319433 Kohan Nov 2001 B1
6328446 Bhalakia et al. Dec 2001 B1
6333073 Nelson et al. Dec 2001 B1
6334681 Perrott et al. Jan 2002 B1
6353078 Murata et al. Mar 2002 B1
6390621 Maki et al. May 2002 B1
6416690 Soane et al. Jul 2002 B1
6441077 Border et al. Aug 2002 B1
6521146 Mead Feb 2003 B1
6547390 Bernheim et al. Apr 2003 B1
6585373 Evans et al. Jul 2003 B2
6608215 Qin Aug 2003 B2
6613433 Yamamoto et al. Sep 2003 B2
6698884 Perrott et al. Mar 2004 B2
6770324 Hooker Aug 2004 B2
6797383 Nishizawa et al. Sep 2004 B2
6807006 Nakagoshi Oct 2004 B2
6814896 Bhalakia et al. Nov 2004 B2
6863844 Engardio et al. Mar 2005 B2
6863848 Engardio et al. Mar 2005 B2
6971116 Takeda et al. Nov 2005 B2
7004583 Miniutti et al. Feb 2006 B2
7008568 Qin Mar 2006 B2
7021761 Künzler et al. Apr 2006 B2
7025457 Trinh et al. Apr 2006 B2
7025458 Vu Apr 2006 B2
7036932 Boulineau et al. May 2006 B2
7048997 Bhalakia et al. May 2006 B2
7077985 Maki et al. Jul 2006 B2
7104648 Dahi et al. Sep 2006 B2
7335702 La Dous Feb 2008 B2
7350917 Kawai et al. Apr 2008 B2
7465414 Knox et al. Dec 2008 B2
7500749 Vu Mar 2009 B2
20010035935 Bhalakia et al. Nov 2001 A1
20020197484 Nishizawa et al. Dec 2002 A1
20030184863 Nakagoshi Oct 2003 A1
20040125335 Vu Jul 2004 A1
20040207809 Blackburn et al. Oct 2004 A1
20050009964 Sugimura et al. Jan 2005 A1
20050168689 Knox Aug 2005 A1
20050168690 Kawai et al. Aug 2005 A1
20050233153 Qin et al. Oct 2005 A1
20060065989 Druffel et al. Mar 2006 A1
20060146278 Vu Jul 2006 A1
20060187411 Boulineau et al. Aug 2006 A1
20060192306 Giller et al. Aug 2006 A1
20060244909 Maki et al. Nov 2006 A1
20060264563 Hanrahan et al. Nov 2006 A1
20070001327 Chiu Jan 2007 A1
20070122626 Qin et al. May 2007 A1
20070177100 Knox Aug 2007 A1
20070291345 Kumar et al. Dec 2007 A1
Foreign Referenced Citations (45)
Number Date Country
2003225785 Sep 2002 AU
2003225785 Sep 2003 AU
2004270746 Mar 2005 AU
0 050 594 Apr 1982 EP
0 134 633 Mar 1985 EP
0 299 509 Jan 1989 EP
0 415 716 Jun 1991 EP
0 552 498 Jul 1993 EP
0 814 956 Jan 1998 EP
1 162 482 Dec 2001 EP
1 273 935 Jan 2003 EP
2 174 711 Nov 1986 GB
56013139 Feb 1981 JP
56-013139 Sep 1981 JP
58173181 Oct 1983 JP
36-0195515 Oct 1985 JP
61-005910 Jan 1986 JP
61-032004 Feb 1986 JP
36-1236521 Oct 1986 JP
61-276882 Dec 1986 JP
63-061203 Mar 1988 JP
63-178193 Jul 1988 JP
10-22538 Jan 1989 JP
03-132701 Jun 1991 JP
03 282445 Dec 1991 JP
32-69507 Dec 1991 JP
43-58145 Dec 1992 JP
05 032965 Feb 1993 JP
62-38689 Aug 1994 JP
07 048363 Feb 1995 JP
90-01716 Jan 1997 JP
2002196103 Jul 2002 JP
2004 034609 Feb 2004 JP
WO 8100769 Mar 1981 WO
WO 9515845 Jun 1995 WO
WO 9634735 Nov 1996 WO
WO 9837115 Aug 1998 WO
WO 0149478 Jul 2001 WO
WO 02093235 Nov 2002 WO
WO 03078148 Sep 2003 WO
WO 2004011235 Feb 2004 WO
WO 2004068217 Aug 2004 WO
WO 2005023529 Mar 2005 WO
WO 2006094312 Sep 2006 WO
WO 2007041347 Apr 2007 WO
Related Publications (1)
Number Date Country
20060196413 A1 Sep 2006 US
Provisional Applications (1)
Number Date Country
60658800 Mar 2005 US