Claims
- 1. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:An organic amine2-98%Water0-50%A 1,3-dicarbonyl compound chelating agent0.1-60%A second or alternative chelating agent0-25%A polar organic solvent2-98%
- 2. A cleaning formulation as described in claim 1 wherein said organic amine is chosen from the group consisting of:Pentamethyldiethylenetriamine (PMDETA)5-95%Triethanolamine (TEA)5-95%.
- 3. A cleaning formulation as described in claim 1 wherein said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:2,4-Pentanedione 2-90%Methyl acetoacetate15-70%Dimethylmalonate10-48.3%.
- 4. A cleaning formulation as described in claim 1 wherein said polar organic solvent is chosen from the group consisting of:Ethylene glycol0-74%N-Methylpyrrolodone (NMP)0-49%Sulfolane0-10%.
- 5. A cleaning formulation as described in claim 1 wherein said secondary or alternative chelating agent is chosen from the group consisting of:Ammonium pyrrolidinedithiocarbamate0-25%Ammonium carbamate0-15%Ammonium oxalate0-15%Ammonium thiocyanate0-15%Ammonium thiosulfate0-15%Trifluoroacetic acid0-12%
- 6. A cleaning formulation as described in claim 1 wherein said organic amine is chosen from the group consisting of:Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA) Diazabicyclo (2.2.2) octane Diethylenetriamine 3,3′-Iminobis (N,N-dimethylpropylamine) N-Methylimidazole Tetraethylenepentamine Triethylenetetramine Trimethoxyethoxyethylamine Diethanolamine Methyldiethanolamine Tetramethylhexanediamine N,N-Diethylethanolamine.
- 7. A cleaning formulation as described in claim 1 wherein said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:2,4-Pentanedione Methyl acetoacetate Dimethylmalonate N-Methylacetoacetamide Acetoacetamide Malonamide.
- 8. A cleaning formulation as described in claim 1 wherein said organic amine is chosen from the group consisting of:Pentamethyldiethylenetriamine (PMDETA)5-95%Triethanolamine (TEA)5-95%said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:2,4-Pentanedione 2-90%Methyl acetoacetate15-70%Dimethylmalonate10-48.3% and said polar organic solvent is chosen from the group consisting of:Ethylene glycol0-74%N-Methylpyrrolodone (NMP)0-49%Sulfolane 0-10%.
- 9. A cleaning formulation as described in claim 1 wherein said chelating agent would have the following general structure:X—CHR—Y in which R is either a hydrogen atom or an aliphatic group and X and Y are functional groups containing multiply bonded moities known to have electron-withdrawing properties, wherein X and Y may be CONH2, CONHR′, CN, NO2, SOR′, SO2Z in which R′ represents an alkyl group, and Z represents another atom or group. and wherein X and Y may be identical or different.
- 10. A cleaning formulation as described in claim 1 being comprised of:PMDETA40-55%2,4-Pentanedione15-20%Water26.7-45%.
- 11. A cleaning formulation as described in claim 1 being comprised of:TEA40%2,4-Pentanedione15%Water 45%.
- 12. A cleaning formulation as described in claim 1 being comprised of:PMDETA11.7-40%2,4-Pentanedione 15-40%Ethylene glycol 45-48.3%.
- 13. A cleaning formulation as described in claim 1 being comprised of:PMDETA11.7%2,4-Pentanedione 40%NMP 48.3%.
- 14. A method for fabricating a semiconductor wafer including the steps comprising:plasma etching a metalized layer from a surface of the wafer; plasma ashing a resist from the surface of the wafer following the metal etching step; cleaning the wafer in the following step using a chemical formulation including the following components in the percentage by weight ranges shown: An organic amine2-98%Water0-50%A 1,3-dicarbonyl compound chelating agent0.1-60%A second or alternative chelating agent0-25%A polar organic solvent2-98%
- 15. A method as described in claim 14 wherein said organic amine is chosen from the group consisting of:Pentamethyldiethylenetriamine (PMDETA)5-95%Triethanolamine (TEA) 5-95%.
- 16. A method as described in claim 14 wherein said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:2,4-Pentanedione 2-90%Methyl acetoacetate15-70%Dimethylmalonate10-48.3%.
- 17. A method as described in claim 14 wherein said polar organic solvent is chosen from the group consisting of:Ethylene glycol0-74%N-Methylpyrrolodone (NMP)0-49%Sulfolane 0-10%.
- 18. A method as described in claim 14 wherein said second or alternative chelating agent is chosen from the group consisting of:Ammonium pyrrolidinedithiocarbamate0-25%Ammonium carbamate0-15%Ammonium oxalate0-15%Ammonium thiocyanate0-15%Ammonium thiosulfate0-15%Trifluoroacetic acid 0-12%.
- 19. A method as described in claim 14 wherein said organic amine is chosen from the group consisting of:Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA) Diazabicyclo (2.2.2) octane Diethylenetriamine 3,3′-Iminobis (N,N-dimethylpropylamine) N-Methylimidazole Tetraethylenepentamine Triethylenetetramine Trimethoxyethoxyethylamine Diethanolamine Methyldiethanolamine Tetramethylhexanediamine N,N-Diethylethanolamine.
- 20. A method as described in claim 14 wherein said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:2,4-Pentanedione Methyl acetoacetate Dimethylmalonate N-Methylacetoacetamide Acetoacetamide Malonamide.
- 21. A method as described in claim 14 wherein said organic amine is chosen from the group consisting of:Pentamethyldiethylenetriamine (PMDETA)5-95% Triethanolamine (TEA)5-95%.said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:2,4-Pentanedione 2-90%Methyl acetoacetate15-70%Dimethylmalonate10-48.3% and said polar organic solvent is chosen from the group consisting of:Ethylene glycol0-74%N-Methylpyrrolodone (NMP)0-49%Sulfolane 0-10%.
- 22. A method as described in claim 14 wherein said chelating agent would have the following general structure:X—CHR—Y in which R is either a hydrogen atom or an aliphatic group and X and Y are functional groups containing multiply bonded moities known to have electron-withdrawing properties, wherein X and Y may be CONH2, CONHR′, CN, NO2, SOR′, SO2Z in which R′ represents an alkyl group and Z represents another atom or group and wherein X and Y may be identical or different.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is the U.S. National Phase application to International application No. PCT/US97/23917, which claims priority to U.S. Provisional Application Ser. No. 60/044,826, filed Apr. 25, 1997 and U.S. Provisional Application Ser. No. 60/034,144, filed Dec. 24, 1996.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
102e Date |
371c Date |
PCT/US97/23917 |
|
WO |
00 |
4/20/1999 |
4/20/1999 |
Publishing Document |
Publishing Date |
Country |
Kind |
WO98/28395 |
7/2/1998 |
WO |
A |
US Referenced Citations (6)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0701274A1 |
Mar 1996 |
JP |
WO60034144 |
Dec 1996 |
WO |