Capasso et al.--Appl. Phys. Lett.--vol. 51, No. 7, Aug. 17, 1987, pp. 526-527. |
Longenbach et al.--IEEE Trans. on Electron Devices--vol. 37, No. 10, Oct. 1990. |
"A Complementary Heterostructure Field Effect Transistor Technology Based on InAs/AlSb/GaSb/"--by K. F. Longenbach et al.--IEEE Transactions on Electron Devices, vol. 37, No. 10, Oct. 1990 0018-9383/90/1000-226501.00 1990 IEEE. |
"p-Channel Modulation-Doped Field-Effect Transistors Based on AlSb0.9As0.1/GaSb"--by L. F. Luo et al.--IEEE Electron Device Letters, vol. 11, No. 12, Dec. 1990--0741-3106/90/1200-0567m, 1990 IEEE. |