Claims
- 1. A high frequency power source, comprising:
a high frequency power generator for generating a high frequency power for producing a plasma inside a chamber of a plasma processing apparatus; and a control unit for controlling the high frequency power by removing harmonic components and modulated wave components developed while producing the plasma from the high frequency power generated from the high frequency power generator, wherein the control unit converts the high frequency power generated from the high frequency power generator into a low frequency power having a specific frequency, and performs a wave detection on the basis of the low frequency power.
- 2. The high frequency power source of claim 1, wherein the control unit includes:
a high frequency power output unit for outputting a first high frequency power from the high frequency power generated from the high frequency power generator; an oscillation unit for oscillating a second high frequency power having a different frequency from that of the outputted first high frequency power; a multiplication unit for multiplying the first high frequency power outputted by the high frequency power output unit by the second high frequency power oscillated by the oscillation unit; and a detection unit for detecting the low frequency power having the specific frequency out of a high frequency power obtained by the multiplication unit.
- 3. The high frequency power source of claim 2, wherein the detection unit includes a high frequency attenuation unit for attenuating predetermined high frequency components out of the high frequency power obtained by the multiplication unit.
- 4. The high frequency power source of claim 1, wherein the specific frequency is in a range from 10 Hz to 500 KHz.
- 5. The high frequency power source of claim 3, wherein the specific frequency is in a range from 10 Hz to 500 KHz.
- 6. A controlling method of a high frequency power source having a high frequency power generator for generating a high frequency power for producing a plasma inside a chamber of a plasma processing apparatus and a control unit for controlling the high frequency power by removing harmonic components and modulated wave components developed while producing the plasma from the high frequency power generated from the high frequency power generator, the method comprising:
a high frequency power outputting step for outputting a first high frequency power from the high frequency power generated from the high frequency power generator; an oscillating step for oscillating a second high frequency power having a different frequency from that of the outputted first high frequency power; a multiplying step for multiplying the first high frequency power outputted in the high frequency power outputting step by the second high frequency power oscillated in the oscillating step; an attenuating step for attenuating predetermined high frequency components out of a high frequency power obtained in the multiplying step; and a detecting step for detecting a low frequency power having a specific frequency.
- 7. A high frequency power source, comprising:
a power combining unit for combining at least two high frequency powers; and a control unit for controlling a high frequency power obtained by the power combining unit, wherein the high frequency power controlled by the control unit is supplied to a plasma processing apparatus as an incident power, and wherein the power combining unit includes a branch unit for branching a reflecting power of the incident power supplied to the plasma processing apparatus and a consumption unit for consuming the reflecting power branched by the branch unit, and wherein the branch unit combines at least two high frequency powers.
- 8. The high frequency power source of claim 7, wherein the branch unit includes at least two circulators made of ferrite and coupled to the control unit in parallel.
- 9. The high frequency power source of claim 7, wherein the consumption unit includes resistances coupled to the circulators, respectively.
- 10. The high frequency power source of claim 7, comprising a plurality of additional power combining units for combining at least two high frequency powers and supplying the combined power to the power combining unit.
- 11. The high frequency power source of claim 9, comprising a plurality of additional power combining units for combining at least two high frequency powers and supplying the combined power to the power combining unit.
- 12. A high frequency power source, comprising:
a high frequency power generator for generating a high frequency component for producing a plasma inside a chamber of a plasma processing apparatus; and a control unit for controlling the high frequency component by removing harmonic components and modulated wave components developed while producing the plasma from high frequency components having as a main frequency a first frequency generated from the high frequency power generator, wherein the control unit includes: an oscillation unit for oscillating a high frequency component of a second frequency, which is different from the first frequency, a multiplication unit for multiplying the high frequency components having as the main frequency the first frequency by the high frequency component of the second frequency, and a detection unit for converting an output from the multiplication unit into a high frequency component of a third frequency to detect same.
- 13. A plasma processing apparatus, comprising:
a chamber accommodating therein a substrate to be processed; and a high frequency power source supplying a high frequency power to the chamber, wherein a plasma is produced inside the chamber by the high frequency power to perform a plasma processing on the substrate to be processed, wherein the high frequency power source includes: a high frequency power generator for generating the high frequency power to produce the plasma, a high frequency output unit for outputting a first high frequency power from the high frequency power generated from the high frequency power generator, an oscillation unit for oscillating a second high frequency power having a different frequency from that of the outputted first high frequency power, a multiplication unit for multiplying the first high frequency power outputted by the high frequency output unit by the second high frequency power oscillated by the oscillation unit, a high frequency attenuation unit for attenuating predetermined high frequency components out of a high frequency power obtained by the multiplication unit, a detection unit for detecting a low frequency power having a specific frequency, and a control unit for converting the high frequency power into the low frequency power having the specific frequency, removing harmonic components and modulated wave components on the basis of the low frequency power, and controlling the high frequency power.
- 14. A plasma processing apparatus, comprising:
a chamber accommodating therein a substrate to be processed; and a high frequency power source supplying a high frequency power to the chamber, wherein a plasma is produced inside the chamber by the high frequency power to perform a plasma processing on the substrate to be processed, wherein the high frequency power source includes: a power combining unit for combining at least two high frequency powers, a control unit for controlling a high frequency power combined by the power combining unit, a supply unit for supplying the high frequency power controlled by the control unit as an incident power, a branch unit for branching a reflecting power of the incident power supplied to the plasma processing apparatus, and a consumption unit for consuming the reflecting power branched by the branch unit, wherein the branch unit combines at least two high frequency powers.
Priority Claims (2)
Number |
Date |
Country |
Kind |
2001-375639 |
Dec 2001 |
JP |
|
2001-375961 |
Dec 2001 |
JP |
|
Parent Case Info
[0001] This application is a Continuation Application of PCT International Application No. PCT/JP02/12937 filed on Dec. 10, 2002, which designated the United States.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/JP02/12937 |
Dec 2002 |
US |
Child |
10864538 |
Jun 2004 |
US |