In the semiconductor chip fabrication industry, it is necessary to clean and dry a substrate after a fabrication operation has been performed that leaves unwanted residues on the surfaces of the substrate. Examples of such a fabrication operations include plasma etching (e.g., tungsten etch back (WEB)) and chemical mechanical polishing (CMP). In CMP, a substrate is placed in a holder that pushes a substrate surface against a polishing surface. The polishing surface uses a slurry which consists of chemicals and abrasive materials. Unfortunately, the CMP process tends to leave an accumulation of slurry particles and residues on the substrate surface. If left on the substrate, the unwanted residual material and particles may cause defects. In some cases, such defects may cause devices on the substrate to become inoperable. Cleaning the substrate after a fabrication operation removes unwanted residues and particulates and prevent such defects from occurring.
After a substrate has been wet cleaned, the substrate must be dried effectively to prevent water or cleaning fluid, (hereinafter, “fluid”) remnants from leaving residues on the substrate. If the cleaning fluid on the substrate surface is allowed to evaporate, as usually happens when droplets form, residues or contaminants previously dissolved in the fluid will remain on the substrate surface after evaporation and can form spots. To prevent evaporation from taking place, the cleaning fluid must be removed as quickly as possible without the formation of droplets on the substrate surface. In an attempt to accomplish this, one of several different drying techniques are employed such as spin-drying, IPA, or Marangoni drying. All of these drying techniques utilize some form of a moving liquid/gas interface on a substrate surface, which, if properly maintained, results in drying of a substrate surface without the formation of droplets. Unfortunately, if the moving liquid/gas interface breaks down, as often happens with all of the aforementioned drying methods, droplets form and evaporation occurs resulting in contaminants being left on the substrate surface.
Current substrate carriers do not have a desired combination of attributes for conveying a substrate during cleaning and other processing steps such that the formation of droplets on the substrate surface can be avoided. In view of the foregoing, there is a need for improved cleaning systems and methods that provide efficient cleaning while reducing the likelihood of marks from dried fluid droplets.
Broadly speaking, the present invention fills these needs by providing a carrier structure and method of making same for supporting a wafer during processing by a substrate-processing meniscus.
It should be appreciated that the present invention can be implemented in numerous ways, including as a process, an apparatus, a system, a device, or a method. Several inventive embodiments of the present invention are described below.
In one embodiment, a carrier structure for supporting a substrate when being processed by passing the carrier through a meniscus formed by at least one proximity head is provided. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening, the opening being slightly larger than the substrate such that a gap exists between the substrate and the opening. The frame comprises a composite core, a top sheet, a bottom sheet, a layer of aramid fabric between the top sheet and the core and a second layer of aramid fabric between the bottom sheet and the core. The top sheet and the bottom sheet being formed from a polymer material.
In another embodiment, a method of manufacturing a carrier is provided. The method includes forming a composite frame having a carbon fiber core, a top sheet, a bottom sheet, a layer of aramid fabric between the top sheet and the core and a second layer of aramid fabric between the bottom sheet and the core. The top sheet and the bottom are each formed from a polymer material. The method further includes forming an opening sized for receiving a substrate and providing a plurality of support pins extending into the opening for supporting the substrate within the opening. The opening is formed slightly larger than the substrate such that a gap exists between the substrate and the opening.
In yet another embodiment, a method of making a carrier for use in preparing a substrate is provided. The method includes forming body comprising a core material having a first side and a second side, forming an opening in the body, applying a thermal curing cycle to the body to minimize residual stresses and reduce non-flatness characteristics of the body, and applying a pressure over a top surface and edges of the thermoplastic layers to ensure confinement of the body, and machining the body to define the carrier. The core material has a layer of thermoplastic formed over both the first side and second side of the core material. The opening is sized to receive the substrate. The machining is configured to define dimensions of the opening and outer size parameters of the carrier.
The advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings, and like reference numerals designate like structural elements.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that the present invention may be practiced without some of these specific details. In other instances, known process operations and implementation details have not been described in detail in order to avoid unnecessarily obscuring the invention. The term, “meniscus,” as used herein, refers to a volume of liquid bounded and contained in part by surface tension of the liquid. The meniscus is also controllable and can be moved over a surface in the contained shape. In specific embodiments, the meniscus is maintained by the delivery of fluids to a surface while also removing the fluids so that the meniscus remains controllable. Furthermore, the meniscus shape can be controlled by precision fluid delivery and removal systems that are in part interfaced with a controller a computing system, which may be networked.
Carrier 150 may be conveyed by an apparatus for causing carrier 150 to move between and through the upper and lower proximity heads 110, 120 in the direction of arrow 166. The conveying apparatus, for example, may include track 111 shown in
In one embodiment, a substrate 160 is deposited on carrier 150 at a first location on one side of proximity heads 110, 120, and removed when carrier 150 arrives at a second location on an opposite side of proximity heads 110, 120. Carrier 150 may then pass back through proximity heads 110, 120, or over, under, or around proximity heads 110, 120, back to the first location, where a next substrate is deposited, and the process is repeated. The carrier 150 may also be moved through multiple proximity head stations or other processing stations.
Carrier 150 includes a plurality of support pins 152 (shown in
It should be noted that, while in the example shown in
In certain embodiments, a controller 130, which may be a general purpose or specific purpose computer system whose functionality is determined by logic circuits, software, or both, controls the movement of carrier 150 and the flow of fluids to upper and lower proximity heads 110, 120. The fluids can be supplied from facilities of a clean room, or from containers.
In
Carrier 150 also includes thickened edges 155, 157 along the carrier's left and right edges to provide increased mechanical stability. Thickened portions 155, 157 can be seen more clearly in the perspective cross-section view shown in
Since carrier 150 supports a wafer as it passes through a meniscus which may be only about 2-3 millimeters thick, it is important that it be thin, flat, and rigid, so as to minimize vertical deflection, i.e., deflection perpendicular to the surface of carrier 150. It may also be desirable that the carrier be resistant to corrosive chemicals used in wet wafer processing such as hydrofluoric acid (hydrogen fluoride solution). In one embodiment, the carrier is about 1.5 millimeters thick except at the thickened portions along thickened edges 155, 157. In one embodiment, carrier 150 is held in tension with left and right edges being biased away from each other by the conveyor apparatus to increase the carrier's rigidity and reduce vertical deflection. In another embodiment, carrier 150 is created with a slight arch so that when it carries the weight of a wafer or other substrate, it flattens out for minimal deviation from the plane. It is also possible to do both, i.e., it is possible to provide a slight arch for improved flatness under load while also maintaining the carrier in tension to further reduce vertical deflection.
Carrier 150 also includes a layered structure 220 shown in
In one embodiment, pins 152 (only one shown in
In one embodiment, wafer carrier 150 may be produced by stacking a layer of polyvinylidene fluoride sheeting, a layer of aramid fabric, a composite core comprising unidirectional carbon fiber reinforced epoxy, another layer of aramid fabric and another layer of polyvinylidene fluoride sheeting. For more precise shape forming of the edges and corners, including thickened edges 155, 157 (
Pressure may then be applied to the top and all edges of the carrier to ensure confinement and flatness. In one embodiment, the pressure plates are formed with recesses to mold thickened edges 155, 157. In addition, pressure plates may be formed with a slight arch to create an arched carrier that flattens under the load of carrying a wafer. Of course, other shape-forming features may be formed into the pressure plates.
In one embodiment, while pressure is still applied, the stack may be subjected to a thermal curing cycle to sinter or bind filler material 228, minimize residual stress and ensure flatness. In one embodiment, the thermal cycle includes heating the structure to the melting temperature of the polyvinylidene fluoride, i.e., approximately 340° F. (171° C.). As is generally known, depending on the particular oven used, calibration curves may be established between the oven and part temperatures for consistency in the result. After the curing cycle, the carrier may be machined to final dimensions, and then the surface modified to a specific roughness required for desired hydrophobicity. In another embodiment, the stack is subjected to a thermal cycling to reduce residual stress, and separately heated to the melting point of polyvinylidene fluoride.
In one embodiment, pins 152 (
In operation 306, a temperature up to the melting temperature of the outer layers is applied. This operation may be combined with operation 304. In one embodiment, the outer layers are formed by polyvinylidene fluoride, which has a melting temperature at about 340° F. (171° C.). Depending on the oven used, calibration curves may be established between the oven and part temperatures.
In operation 308, pressure is applied on the top and all edges of the carrier to ensure confinement. The pressure may be applied concurrently with thermal cycling.
In operation 310, the carrier is machined to final dimensions. Optionally, in operation 312, the surface conditions may be modified to the roughness required for the desired hydrophobicity. The method of making then ends as indicated by done block 314.
Although the foregoing invention has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims.
This Application claims the benefit of U.S. Provisional Patent Application having Ser. No. 60/876,631 entitled “Hybrid Composite Wafer Carrier For Wet Clean Equipment,” filed on Dec. 21, 2006, and incorporated herein by reference. The present Application is related to the following U.S. Patents and U.S. Patent Applications, all of which are incorporated herein by reference in their entirety: U.S. Pat. No. 6,488,040, issued on Dec. 3, 2002 to De Larios, et al. and entitled, “Method And Apparatus For Drying Semiconductor Wafer Surfaces Using A Plurality Of Inlets And Outlets Held In Close Proximity To The Wafer Surfaces;” U.S. patent application Ser. No. 10/330,843, filed on Dec. 24, 2002 and entitled, “Meniscus, Vacuum, IPA Vapor Drying Manifold;” U.S. patent application Ser. No. 10/330,897, also filed on Dec. 24, 2002, entitled, “System For Substrate Processing With Meniscus, Vacuum, IPA Vapor, Drying Manifold;” U.S. patent application Ser. No. 10/404,692, filed Mar. 31, 2003 and entitled, “Methods And Systems For Processing A Substrate Using A Dynamic Liquid Meniscus;”U.S. patent application Ser. No. 10/817,620, which was filed on Apr. 1, 2004, entitled, “Substrate Meniscus Interface And Methods For Operation;” U.S. patent application Ser. No. 11/537,501, which was filed Sep. 29, 2006 and entitled, “Carrier for Reducing Entrance and/or Exit Marks Left By a Substrate-Processing Meniscus;” and U.S. patent application Ser. No. 11/639,752 filed on Dec. 15, 2006 and entitled, “Controlled Ambient System for Interface Engineering.”
Number | Name | Date | Kind |
---|---|---|---|
3953265 | Hood | Apr 1976 | A |
4086870 | Canavello et al. | May 1978 | A |
4367123 | Beck | Jan 1983 | A |
4444492 | Lee | Apr 1984 | A |
4609285 | Samuels | Sep 1986 | A |
4715408 | Eisenlohr | Dec 1987 | A |
4838289 | Kottman et al. | Jun 1989 | A |
4901011 | Koike et al. | Feb 1990 | A |
5102494 | Harvey et al. | Apr 1992 | A |
5180431 | Sugimoto et al. | Jan 1993 | A |
5185195 | Harpell et al. | Feb 1993 | A |
5198280 | Harpell et al. | Mar 1993 | A |
5271774 | Leenaars et al. | Dec 1993 | A |
5294257 | Kelly et al. | Mar 1994 | A |
5304413 | Bloom et al. | Apr 1994 | A |
5343234 | Kuehnle | Aug 1994 | A |
5361449 | Akimoto | Nov 1994 | A |
5472502 | Batchelder | Dec 1995 | A |
5512356 | Haager | Apr 1996 | A |
5558111 | Lofaro | Sep 1996 | A |
5601655 | Bok et al. | Feb 1997 | A |
5654034 | Tulloch et al. | Aug 1997 | A |
5660642 | Britten | Aug 1997 | A |
5677045 | Nagai et al. | Oct 1997 | A |
5696348 | Kawamura et al. | Dec 1997 | A |
5705223 | Bunkofske | Jan 1998 | A |
5709757 | Hatano et al. | Jan 1998 | A |
5722927 | Fuchs et al. | Mar 1998 | A |
5741456 | Ayrton | Apr 1998 | A |
5750244 | Christensen et al. | May 1998 | A |
5807522 | Brown et al. | Sep 1998 | A |
5820686 | Moore | Oct 1998 | A |
5827608 | Rinehart et al. | Oct 1998 | A |
5830334 | Kobayashi | Nov 1998 | A |
5882433 | Ueno | Mar 1999 | A |
5893004 | Yamamura | Apr 1999 | A |
5911861 | Dubs et al. | Jun 1999 | A |
5945351 | Mathuni | Aug 1999 | A |
5975098 | Yoshitani et al. | Nov 1999 | A |
5989478 | Ouellette et al. | Nov 1999 | A |
5997653 | Yamasaka | Dec 1999 | A |
6086454 | Watanabe et al. | Jul 2000 | A |
6092937 | Snodgrass et al. | Jul 2000 | A |
6103636 | Zahorik et al. | Aug 2000 | A |
6108932 | Chai | Aug 2000 | A |
6132586 | Adams et al. | Oct 2000 | A |
6169244 | Carlos | Jan 2001 | B1 |
6214513 | Cai et al. | Apr 2001 | B1 |
6230722 | Mitsumori et al. | May 2001 | B1 |
6341998 | Zhang | Jan 2002 | B1 |
6391166 | Wang | May 2002 | B1 |
6398975 | Mertens et al. | Jun 2002 | B1 |
6417117 | Davis | Jul 2002 | B1 |
6433541 | Lehman et al. | Aug 2002 | B1 |
6446358 | Mitsumori et al. | Sep 2002 | B1 |
6458526 | Schembri et al. | Oct 2002 | B1 |
6474786 | Percin et al. | Nov 2002 | B2 |
6488040 | De Larios et al. | Dec 2002 | B1 |
6491764 | Mertens et al. | Dec 2002 | B2 |
6495005 | Colgan et al. | Dec 2002 | B1 |
6514570 | Matsuyama et al. | Feb 2003 | B1 |
6530823 | Ahmadi et al. | Mar 2003 | B1 |
6531206 | Johnston et al. | Mar 2003 | B2 |
6550988 | Sugimoto et al. | Apr 2003 | B2 |
6555017 | Rushford et al. | Apr 2003 | B1 |
6566286 | Sakaguchi et al. | May 2003 | B1 |
6579610 | Shortland et al. | Jun 2003 | B1 |
6616772 | De Larios et al. | Sep 2003 | B2 |
6629540 | Mitsumori et al. | Oct 2003 | B2 |
6643564 | Kataoka et al. | Nov 2003 | B2 |
6652938 | Nishikawa et al. | Nov 2003 | B1 |
6662950 | Cleaver | Dec 2003 | B1 |
6689323 | Fisher et al. | Feb 2004 | B2 |
6764720 | Pui et al. | Jul 2004 | B2 |
6799584 | Yogev et al. | Oct 2004 | B2 |
6807891 | Fisher | Oct 2004 | B2 |
6842299 | Duon et al. | Jan 2005 | B2 |
6849339 | Dey et al. | Feb 2005 | B2 |
6851435 | Mertens et al. | Feb 2005 | B2 |
6854473 | Hanson et al. | Feb 2005 | B2 |
6864195 | Peng | Mar 2005 | B2 |
6954993 | Smith et al. | Oct 2005 | B1 |
6988326 | O'Donnell et al. | Jan 2006 | B2 |
6988327 | Garcia et al. | Jan 2006 | B2 |
7000622 | Woods et al. | Feb 2006 | B2 |
7069937 | Garcia et al. | Jul 2006 | B2 |
7093375 | O'Donnell | Aug 2006 | B2 |
7122399 | Watanabe et al. | Oct 2006 | B2 |
7143527 | Garcia et al. | Dec 2006 | B2 |
7153400 | Ravkin et al. | Dec 2006 | B2 |
7193232 | Lof et al. | Mar 2007 | B2 |
7230047 | Issari | Jun 2007 | B2 |
7234477 | de Larios et al. | Jun 2007 | B2 |
7240679 | Woods | Jul 2007 | B2 |
7252097 | Boyd et al. | Aug 2007 | B2 |
7374474 | Nishiyama et al. | May 2008 | B2 |
7378359 | Eleazer | May 2008 | B2 |
7703462 | O'Donnell et al. | Apr 2010 | B2 |
7713890 | Vogt et al. | May 2010 | B2 |
7946303 | O'Donnell et al. | May 2011 | B2 |
20020121290 | Tang et al. | Sep 2002 | A1 |
20030091754 | Chihani et al. | May 2003 | A1 |
20030092264 | Kajita et al. | May 2003 | A1 |
20040069319 | Boyd et al. | Apr 2004 | A1 |
20040241475 | Morabito | Dec 2004 | A1 |
20050132515 | Boyd et al. | Jun 2005 | A1 |
20050139318 | Woods et al. | Jun 2005 | A1 |
20050145265 | Ravkin et al. | Jul 2005 | A1 |
20050145267 | Korolik et al. | Jul 2005 | A1 |
20050145268 | Woods | Jul 2005 | A1 |
20050148197 | Woods et al. | Jul 2005 | A1 |
20050178504 | Speh et al. | Aug 2005 | A1 |
20050217703 | O'Donnell | Oct 2005 | A1 |
20060081270 | Woods et al. | Apr 2006 | A1 |
20060124153 | Yun et al. | Jun 2006 | A1 |
20080093765 | Sartor et al. | Apr 2008 | A1 |
Number | Date | Country |
---|---|---|
0 905 746 | Mar 1999 | EP |
0 905 747 | Mar 1999 | EP |
1 489 461 | Dec 2004 | EP |
1 489 462 | Dec 2004 | EP |
1 571 697 | Sep 2005 | EP |
05837190 | Mar 1983 | JP |
62150828 | Jul 1987 | JP |
02280330 | Nov 1990 | JP |
02309638 | Dec 1990 | JP |
08277486 | Oct 1996 | JP |
9199488 | Jul 1997 | JP |
11031672 | Feb 1999 | JP |
11350169 | Dec 1999 | JP |
2001220688 | Aug 2001 | JP |
2003-151948 | May 2003 | JP |
480221 | Mar 2002 | TW |
483075 | Apr 2002 | TW |
503455 | Sep 2002 | TW |
542791 | Jul 2003 | TW |
WO 9916109 | Apr 1999 | WO |
WO 9949504 | Sep 1999 | WO |
WO 0201613 | Jan 2002 | WO |
WO 0232825 | Apr 2002 | WO |
WO 02101795 | Dec 2002 | WO |
WO 03014416 | Feb 2003 | WO |
WO 03087436 | Oct 2003 | WO |
WO 2004030051 | Apr 2004 | WO |
Number | Date | Country | |
---|---|---|---|
20080152922 A1 | Jun 2008 | US |
Number | Date | Country | |
---|---|---|---|
60876631 | Dec 2006 | US |