Claims
- 1. A mask for transferring a lithographic pattern onto a substrate by use of a lithographic exposure apparatus, said mask comprising:
at least one non-critical feature, formed utilizing one of a low-transmission phase-shift mask and a non-phase-shifting mask, and at least one critical feature, formed utilizing a high-transmission phase-shift mask.
- 2. A mask according to claim 1, wherein said mask is formed on a single supporting plate.
- 3. A mask according to claim 1, wherein said low-transmission phase-shift mask comprises a 5-8% transmission attenuated phase-shift mask.
- 4. A mask according to claim 2, wherein said low-transmission phase-shift mask comprises a 5-8% transmission attenuated phase-shift mask.
- 5. A mask according to claim 1, wherein said low-transmission phase-shift mask comprises a non-phase-shifting chrome mask.
- 6. A mask according to claim 2, wherein said low-transmission phase-shift mask comprises a non-phase-shifting chrome mask.
- 7. A mask according to claim 1, wherein said high-transmission phase-shift mask comprises at least a 10% transmission attenuated phase-shift mask.
- 8. A mask according to claim 2, wherein said high-transmission phase-shift mask comprises at least a 10% transmission attenuated phase-shift mask.
- 9. A mask according to claim 3, wherein said high-transmission phase-shift mask comprises at least a 10% transmission attenuated phase-shift mask.
- 10. A mask according to claim 5, wherein said high-transmission phase-shift mask comprises at least a 10% transmission attenuated phase-shift mask.
- 11. A mask according to claim 1, wherein said high-transmission phase-shift mask comprises at least a 10% transmission chromeless phase-shift mask.
- 12. A mask according to claim 2, wherein said high-transmission phase-shift mask comprises at least a 10% transmission chromeless phase-shift mask.
- 13. A mask according to claim 3, wherein said high-transmission phase-shift mask comprises at least a 10% transmission chromeless phase-shift mask.
- 14. A mask according to claim 5, wherein said high-transmission phase-shift mask comprises at least a 10% transmission chromeless phase-shift mask.
- 15. A mask according to claim 1, wherein said mask comprises a plurality of said non-critical features and a plurality of said critical features.
- 16. A mask according to claim 3, wherein said mask comprises a plurality of said non-critical features and a plurality of said critical features.
- 17. A mask according to claim 5, wherein said mask comprises a plurality of said non-critical features and a plurality of said critical features.
- 18. A mask according to claim 7, wherein said mask comprises a plurality of said non-critical features and a plurality of said critical features.
- 19. A method of forming a mask for transferring a lithographic pattern onto a substrate by use of a lithographic exposure apparatus, said method comprising the steps of:
forming at least one non-critical feature on said mask, said at least one non-critical feature being formed utilizing one of a low-transmission phase-shift mask and a non-phase-shifting mask, and forming at least one critical feature on said mask, said at least one critical feature being formed utilizing a high-transmission phase-shift mask.
- 20. A method for transferring a lithographic pattern from a photolithography mask onto a substrate by use of a lithographic exposure apparatus, said method comprising the steps of:
forming said photolithography mask, said photolithography mask comprising at least one non-critical feature, said at least one non-critical feature being formed utilizing one of a low-transmission phase-shift mask and a non-phase-shifting mask, and at least one critical feature, said at least one critical feature being formed utilizing a high-transmission phase-shift mask, subjecting said photolithography mask to a single exposure utilizing said lithographic exposure apparatus, said single exposure operative for printing both said critical feature and said non-critical feature on said substrate.
- 21. A method according to claim 20, wherein said photolithography mask is a mask according to claim 2.
- 22. A method according to claim 20, wherein said photolithography mask is a mask according to claim 3.
- 23. A method according to claim 20, wherein said photolithography mask is a mask according to claim 5.
- 24. A method according to claim 20, wherein said photolithography mask is a mask according to claim 7.
- 25. A method for transferring a lithographic pattern from a photolithography mask onto a substrate by use of a lithographic exposure apparatus, said method comprising the steps of:
forming a first photolithography mask, said first photolithography mask comprising at least one non-critical feature, said at least one non-critical feature being formed utilizing one of a low-transmission phase-shift mask and a non-phase-shifting mask; forming a second photolithography mask, said second photolithography mask comprising at least one critical feature, said at least one critical feature being formed utilizing a high-transmission phase-shift mask, subjecting said first photolithography mask to an exposure utilizing said lithographic exposure apparatus, and subjecting said second photolithography mask to an exposure utilizing said lithographic exposure apparatus.
- 26. A method according to claim 25, wherein said low-transmission phase-shift mask comprises a 5-8% transmission attenuated phase-shift mask.
- 27. A method according to claim 25, wherein said low-transmission phase-shift mask comprises a non-phase-shifting chrome mask.
- 28. A method according to claim 25, wherein said high-transmission phase-shift mask comprises at least a 10% transmission attenuated phase-shift mask.
- 29. A method according to claim 26, wherein said high-transmission phase-shift mask comprises at least a 10% transmission attenuated phase-shift mask.
- 30. A method according to claim 27, wherein said high-transmission phase-shift mask comprises at least a 10% transmission attenuated phase-shift mask.
- 31. A method according to claim 25, wherein said high-transmission phase-shift mask comprises at least a 10% transmission chromeless phase-shift mask.
- 32. A method according to claim 26, wherein said high-transmission phase-shift mask comprises at least a 10% transmission chromeless phase-shift mask.
- 33. A method according to claim 27, wherein said high-transmission phase-shift mask comprises at least a 10% transmission chromeless phase-shift mask.
- 34. A device manufacturing method comprising the steps of:
(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material; (b) providing a projection beam of radiation using a radiation system; (c) using a pattern on a mask to endow the projection beam with a pattern in its cross-section; (d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material, wherein, in step (c), use is made of a mask comprising:
at least one non-critical feature, formed utilizing one of a low-transmission phase-shift mask and a non-phase-shifting mask, and at least one critical feature, formed utilizing a high-transmission phase-shift mask.
- 35. A device manufactured using a method according to claim 34.
Parent Case Info
[0001] This application is a continuation-in-part of application Ser. No. 09/562,443, which was filed on May 1, 2000.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09562443 |
May 2000 |
US |
Child |
09840291 |
Apr 2001 |
US |