Claims
- 1. An electronic device adapted to received a solution comprising:
a substrate; a plurality of selectively addressable electrodes on the substrate; and a permeation layer adjacent the electrodes, the permeation layer being a sol-gel composition; and an electric source for selectively addressing the electrodes.
- 2. The electronic device of claim 1 wherein the sol-gel composition is comprised of silicon dioxide.
- 3. The electronic device of claim 2 wherein the silicon dioxide sol-gel composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
- 4. The electronic device of claim 3 wherein the surfactant is cetyltrimethylammonium bromide.
- 5. The electronic device of claim 3 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the sol-gel.
- 6. The electronic device of claim 1 further comprising:
an attachment layer adjacent the permeation layer and having selective binding properties for specific binding entities.
- 7. The electronic device of claim 1 further comprising:
an attachment layer integral with the permeation layer and having selective binding properties for specific binding entities.
- 8. An electronic device adapted to receive a solution comprising:
a substrate; a plurality of selectively addressable electrodes on the substrate; and a permeation layer adjacent the electrodes, the permeation layer being a silicon dioxide composition.
- 9. The electronic device of claim 8 wherein the silicon dioxide composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
- 10. The electronic device of claim 9 wherein the surfactant is cetyltrimethylammonium bromide.
- 11. The electronic device of claim 9 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the silicon dioxide composition.
- 12. The electronic device of claim 8 further comprising:
an attachment layer adjacent the permeation layer with selective binding properties for specific binding entities.
- 13. The electronic device of claim 8 further comprising:
an attachment layer integral with the permeation layer and having selective binding properties for specific binding entities.
- 14. A method for forming an electronic device adapted to receive a solution comprising:
providing a substrate; locating a plurality of selectively addressable electrodes on the substrate; and forming a permeation layer adjacent the electrodes, the permeation layer being a sol-gel composition.
- 15. The method of claim 14 wherein the sol-gel composition is comprised of silicon dioxide.
- 16. The method of claim 15 wherein the silicon dioxide sol-gel composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
- 17. The method of claim 16 wherein the surfactant is cetyltrimethylammonium bromide.
- 18. The method of claim 16 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the sol-gel.
- 19. The method of claim 14 further comprising:
forming an attachment layer adjacent the permeation layer with selective binding properties for specific binding entities.
- 20. A method of forming a permeation layer for use on an electronic device comprising:
mixing tetraethylorthosilicate, an alcohol, water and an acid to form a stock solution; mixing the stock solution with additional water and additional acid; adding additional alcohol; adding a surfactant to form a sol-gel solution; depositing the sol-gel solution on a substrate; spinning the substrate; and heating the substrate.
- 21. The method of claim 20 wherein the surfactant is cetyltrimethylammonium bromide, the acid is hydrochloric acid and the alcohol is ethanol.
- 22. The method of claim 21 wherein the final molar ratio is tetraethylorthosilicate=about 1.0, water=about 0.0 to about 40.0, ethanol=about 0.0 to about 40.0 and hydrochloric acid=about 0.0001 to about 0.1.
- 23. The method of claim 20 wherein the weight percent of the surfactant is from 1 weight percent to 5 weight percent.
- 24. The method of claim 20 wherein the amount of surfactant is varied to vary the pore size in the permeation layer.
Parent Case Info
[0001] This application is a continuation of U.S. application Ser. No. 09/354,931, filed Jul. 15, 1999, which is a continuation-in-part of U.S. application Ser. No. 08/986,065, filed Dec. 5, 1997, which is a continuation-in-part of U.S. application Ser. No. 08/534,454, filed Sep. 27, 1995, which is a continuation-in-part of U.S. application Ser. No. 08/304,657, filed Sep. 9, 1994, now U.S. Pat. No. 5,632,957 (which has been continued as application Ser. No. 08/859,644, filed May 20, 1997), which is a continuation-in-part of Ser. No. 08/271,882, filed Jul. 7, 1994, which is a continuation-in-part of Ser. No. 08/146,504, filed Nov. 1, 1993, now U.S. Pat. No. 5,605,662, and a continuation-in-part of Ser. No. 08/708,262, filed Sep. 6, 1996.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09354931 |
Jul 1999 |
US |
Child |
10029472 |
Oct 2001 |
US |
Continuation in Parts (6)
|
Number |
Date |
Country |
Parent |
08986065 |
Dec 1997 |
US |
Child |
09354931 |
Jul 1999 |
US |
Parent |
08534454 |
Sep 1995 |
US |
Child |
08986065 |
Dec 1997 |
US |
Parent |
08304657 |
Sep 1994 |
US |
Child |
08534454 |
Sep 1995 |
US |
Parent |
08271882 |
Jul 1994 |
US |
Child |
08304657 |
Sep 1994 |
US |
Parent |
08146504 |
Nov 1993 |
US |
Child |
08271882 |
Jul 1994 |
US |
Parent |
08708262 |
Sep 1996 |
US |
Child |
08271882 |
Jul 1994 |
US |