Insulating target material, method of manufacturing insulating target material, conductive complex oxide film, and device

Abstract

An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3. The insulating target material includes: an oxide of an element A; an oxide of an element B; an oxide of an element X; and at least one of an Si compound and a Ge compound, the element A being at least one element selected from La, Ca, Sr, Mn, Ba, and Re, the element B being at least one element selected from Ti, V, Sr, Cr, Fe, Co, Ni, Cu, Ru, Ir, Pb, and Nd, and the element X being at least one element selected from Nb, Ta, and V.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a flowchart showing a method of manufacturing an insulating target material according to one embodiment of the invention.

FIG. 2 is a graph showing X-ray analysis results of at conductive complex oxide film of Example 1.

FIG. 3 is a view of a conductive complex oxide film of Example 1 observed by using an SEM.

FIG. 4 is a graph showing X-ray analysis results of a conductive complex oxide film of Comparative Example 1.

FIG. 5 is a graph showing X-ray analysis results of a conductive complex oxide film of Comparative Example 1.

FIG. 6 is a view of a conductive complex oxide film of Comparative Example 1 observed by using an SEM.

FIG. 7 is a photograph showing the outward appearance of a conductive complex oxide film of Comparative Example 1.

FIGS. 8A and 8B show a semiconductor device according to one embodiment of the invention.

FIG. 9 is a sectional view schematically showing a 1T1C ferroelectric memory according to one embodiment of the invention.

FIG. 10 is an equivalent circuit diagram of the ferroelectric memory shown in FIG. 9.

FIG. 11 is a sectional view schematically showing a piezoelectric device according to one embodiment of the invention.

FIG. 12 is a schematic structural view of an inkjet recording head according to one embodiment of the invention.

FIG. 13 is an exploded perspective view of an inkjet recording head according to one embodiment of the invention.

Claims

1. An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material comprising: an oxide of an element A;an oxide of an element B;an oxide of an element X; andat least one of an Si compound and a Ge compound,the element A being at least one element selected from La, Ca, Sr, Mn, Ba, and Re,the element B being at least one element selected from Ti, V, Sr, Cr, Fe, Co, Ni, Cu, Ru, Ir, Pb, and Nd, andthe element X being at least one element selected from Nb, Ta, and V.

2. The insulating target material as defined in claim 1, wherein the Si compound and the Ge compound are oxides.

3. The insulating target material as defined in claim 1, wherein the element A is La, and the element B is Ni.

4. The insulating target material as defined in claim 1, wherein the element X is Nb.

5. A method of manufacturing an insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the method comprising: heat-treating and pulverizing a mixture obtained by mixing an oxide of an element A, an oxide of an element B, and an oxide of an element X to obtain a first powder, the element A being at least one element selected from La, Ca, Sr, Mn, Ba, and Re, the element B being at least one element selected from Ti, V, Sr, Cr, Fe, Co, Ni, Cu, Ru, Ir, Pb, and Nd, and the element X being at least one element selected from Nb, Ta, and V;mixing the first powder and a solution including at least one of an Si raw material and a Ge raw material, and obtaining a second powder from the mixture of the first powder and the solution;heat-treating and pulverizing the second powder to obtain a third powder; andheat-treating the third powder.

6. The method of manufacturing an insulating target material as defined in claim 5, wherein the solution includes at least one of the Si raw material and the Ge raw material in an amount of 2 to 10 mol %.

7. The method of manufacturing an insulating target material as defined in claim 5, wherein the heat treatment of the mixture is performed at 900 to 1000° C.

8. The method of manufacturing an insulating target material as defined in claim 5, wherein the heat treatment of the second powder is performed at 900 to 1000° C.

9. The method of manufacturing an insulating target material as defined in claim 5, wherein the heat treatment of the third powder is performed at 1000 to 1500° C.

10. A conductive complex oxide film represented by a general formula ABO3, comprising: an element A;an element B;at least one element selected from Nb, Ta, and V; andat least one of Si and Ge,the conductive complex oxide film being formed by RF sputtering using the insulating target material as defined in claim 1.

11. A device comprising: a base; andthe conductive complex oxide film as defined in claim 10 formed above the base.