Patent Application
20170199131
The present invention relates to an inverse photoemission spectroscopy apparatus for detecting light generated by the relaxation of electrons to an unoccupied state of a sample when the sample, e.g. an organic semiconductor is irradiated by an electron beam.
Currently, vigorous research has been conducted on devices using an organic semiconductor, such as an organic thin film transistor (OTFT) and an organic thin film solar cell. To develop an organic semiconductor device, it be necessary to accurately measure a valence level and an unoccupied electronic state or a conduction level (or electron affinities serving as the minimum energy, density of states, etc.) A valence level or a valence band can be measured by photoelectron spectroscopy where energy of electrons emitted when a sample is irradiated with light is measured. A known method for measuring an unoccupied electronic state or a conduction band is Inverse Photoemission Spectroscopy (IPES).
In inverse photoemission spectroscopy, a sample is irradiated with an electron beam having homogenous energy, and then a spectrum of light, which is generated when electrons in the sample relax to an unoccupied state, is measured as a function of electron energy to evaluate electron affinities.
Conventionally, in inverse photoemission spectroscopy, in order to obtain a large signal intensity, a sample is irradiated with a strong electron beam to detect vacuum ultraviolet light generated therein. In this case, however, the following problems have occurred. A first problem is that when an organic semiconductor is used as a sample, the sample is easily damaged or altered by the electron beam. A second problem is that vacuum ultraviolet light is required to be detected in a high vacuum state because vacuum ultraviolet light is to be absorbed by oxygen. This problem makes the device structure complicated. A third problem is that the detection of vacuum ultraviolet light requires a special optical system with low resolution, etc.
In view of the above problems, in low-energy inverse photoemission spectroscopy (LEIPS) disclosed in Patent Document 1 and Non-Patent Documents 1 to 4, a sample is irradiated with an ultra-low-speed electron beam having energy lower than the covalent bond energy of molecules of the sample to prevent the sample from being damaged. It is an additional advantage that the light emitted from the sample is near-ultraviolet light, which is not absorbed by oxygen. Thus, detection of the light can be performed in the air. It is also an additional advantage that commercial silica glass, a multilayer interference bandpass filter, etc., which were not available for detecting vacuum ultraviolet light, can be used to detect light with high sensitivity, so that high resolution is achieved.
Patent Document 1: WO 2013/129390 A
Non-Patent Document 1: Hiroyuki Yoshida, “Near-ultraviolet inverse photoemission spectroscopy using ultra-low energy electrons”, Chem. Phys. Lett. 539-540, 180-185 (2012)
Non-Patent Document 2: Hiroyuki Yoshida, “Measuring the electron affinity of organic solids: An indispensable new tool for organic electronics”, Anal. Bioanal. Chem. (Trend2014) 406:2231-2237
Non-Patent Document 3: Hiroyuki Yoshida, “Low energy inverse photoemission spectroscopy apparatus”, Rev. Sci. Instrum. 85, 016101 (2014)
Non-Patent Document 4: Hiroyuki Yoshida, “Low-energy inverse photoemission spectroscopy using a high-resolution grating spectrometer in the near ultraviolet range”, Rev. Sci. Instrum. 84, 103901 (2013)
In Patent Document 1 and Non-Patent Documents 1 to 4, barium oxide BaO is used as the thermionic emission material of the cathode because the operation temperature thereof is low.
However, barium oxide has high reactivity due to the fact is that the work function of barium is low. Therefore, when reacting with water or air, the barium oxide will be severely deteriorated, possibly resulting in decreased electrons emitted. This makes it difficult to store or handle the barium oxide cathode. In addition to this, it is necessary to sufficiently bake out the vacuum chamber or locate the cathode in a vacuum chamber with an ultra-high vacuum in the order of 10−10 Torr. To perform the baking, a heat-resistant material is considered necessary for the user's safety. Furthermore, to achieve the ultra-high vacuum, an expensive seal (e.g., metallic gasket) and a special vacuum pump and expertise in operating such a device are required.
The present invention has been made to solve the above problems. it is an object of the present invention to provide a low-cost inverse photoemission spectroscopy apparatus which is easy to handle.
One aspect of the present invention relates to an inverse photoemission spectroscopy apparatus for detecting a light generated by the relaxation of electrons to an unoccupied state of a sample, the apparatus including:
an electron source for generating electrons with which a sample is irradiated;
a wavelength selector for extracting a light having a certain wavelength from the light generated in the sample;
a photodetector for detecting the light extracted by the wavelength selector; and
a focusing optics disposed between the sample and the photodetector
wherein the electron source contains yttrium oxide as a thermionic emission material.
In one aspect of the present invention, the photodetector may include a photoelectric converter of the solar-blind type that is insusceptible or insensitive to a light having a wavelength of 400 nm or longer.
In one aspect of the present invention, the photoelectric converter of the solar-blind type may contain a photoelectric conversion material selected from the group consisting of cesium iodide, cesium tellurium, and gallium nitride.
In one aspect of the present invention, the focusing optics may include:
a collimating lens disposed between the sample and the wavelength selector so that the light generated in the sample is shaped into a collimated light flux; and
an imaging lens disposed between the wavelength selector and the photodetector so that the light extracted by the wavelength selector is focused to form an image on the photoelectric converter of the photodetector.
In one aspect of the present invention, the wavelength selector may be an. interference bandpass filter of a dielectric multilayer,
In one aspect of the present invention, the sample may be irradiated with an electron beam having energy of 5 eV or less, and the wavelength selector may have a transmission wavelength range between 150 nm and 700 nm.
According to one aspect of the present invention, the electron source contains, as a thermionic emission material, yttrium oxide which can maintain its performance even if it is not in an ultra-high vacuum state. Thus, a low-cost inverse photoemission spectroscopy apparatus which is easy to handle can be achieved. As a result, a valence level and an unoccupied electronic state can be accurately measured with ease, and development of devices using an organic semiconductor, for example, can be promoted.
Referring to the drawings, an inverse photoemission spectroscopy apparatus according to an embodiment of the present invention will be described. In the drawings, the same or similar elements or components are denoted by the same reference numerals.
The electron gun 30 includes a hot cathode or thermionic cathode (hereinafter, simply referred to as “cathode”) 10 as an electron source or an electron generator, and an electron lens 20 for converging electrons generated in the cathode 10. The electron gun 30 irradiates the sample 40 with an electron beam, the electron beam being homogenous and having low energy, preferably less than or equal to 5 eV. The energy of the electron. beam is dependent on a difference between an acceleration voltage applied to the cathode 10 by an accelerating electrode (not shown) and a bias voltage applied to the sample 40 (specifically, the acceleration voltage and the bias voltage are determined in view of work functions of the thermionic emission material and the sample 40). An energy width (a half width of kinetic energy distribution) of the electron beam emitted from the electron gun 30 is influenced by a space charge effect, in addition to an energy width of electrons generated in the cathode 10. In an embodiment of the present invention, however, the influence of the space charge effect may be ignored. Accordingly, the energy width of the electron beam emitted from the electron gun 30 is substantially the same as that of the electrons generated in the cathode 10.
The electron gun 30 and the sample 40 are disposed in a vacuum chamber 50. The vacuum chamber 50 has a window 51, preferably made of silica glass. The vacuum chamber 50 is not required to be in a so-called Ultra-High vacuum state with a pressure in the order of 10 −10 Torr, but may be in a vacuum state (e.g., a pressure in the order of 10−7 Torr, preferably in the order of 10−7 Torr) in which the degree of vacuum is lower (pressure is higher) than the ultrahigh-vacuum state, it should be noted that, for example, the vacuum state with a pressure in the order of 10−7 Torr means a state in which the degree of vacuum is higher than 1×10−6 Torr and equal to or lower than 1×10−7 Torr.
The cathode 10 contains yttrium oxide Y2O3 as a thermionic emission material. The yttrium oxide, however, may have nonstoichiometric composition due to defects or impurities therein. Yttrium oxide has an ability to maintain its performance even if it is used in a state where the degree of vacuum is lower than the aforementioned ultrahigh-vacuum state. The cathode 10 includes a conductive heat-resistant base made of iridium, for example. The yttrium oxide may be applied on the heat-resistant base. The cathode 10 may have various shapes. In Order to increase the emission of electrons as much as possible, even when the cathode is operated at low temperature, the cathode 10 preferably has a disk-shape.
The electron lens 20 has a plurality of electrodes 21 made of oxygen-free copper. The electrodes 21 each are connected to the controller 34. The controller 34 is also connected to the sample 40 (the connection not being shown). The controller 34 is configured to control potential differences V0 to V5 between each of the electrodes 21 and the sample 40. The plurality of electrodes 21 each have a cylindrical shape. The electrodes 21 are integrated by a long screw and a nut (not shown). Insulators 22 are embedded between the electrodes 21, 21. The insulator 22 may be a ball made of ruby or sapphire, an insulator made of ceramic, etc. If the surface of the insulator 22 is charged by an electron beam, a path of the electron beam in the electron lens 20 is to be changed. Therefore, the plurality of electrodes 21 are shaped so that the insulators 22 are hidden from the path of the electron beam.
An aperture 23 or a circular opening is formed in the electrode located closest to the cathode 10 among the plurality of electrodes 21. An aperture 24 is formed in the electrode located closest to the sample 40 among the plurality of electrodes 21.
In the electron gun 30, (1) potential differences V0 to V5 between each of the electrodes 21 and the sample 40, (2) a diameter of the aperture 23, and (3) a distance between the Cathode 10 and the aperture 23 are adjusted and designed. This makes it possible to control an amount of electrons (i.e., electric current) emitted from the electron gun 30 per unit time and an irradiation area by the electrons on the sample 40. In this way, current density on an irradiation surface of the sample 40 is adjusted. The current density preferably ranges from approximately 10−3 A/cm2 to 10−8 A/cm2. When the current density is larger than 10−3 A/cm2, electrons are subject to larger Coulomb force, so that they repel from each other and spread out. When the current density is smaller than 10−8 A/cm2, the detection of light from the sample 40 may become difficult. in particular, the appropriate adjustment in the aforementioned (2) and (3), electrons of necessary intensity can be extracted from the electron gun 30 with temperature of the cathode 10 during operation being decreased.
Returning to
The bandpass filter 90 may be an interference bandpass filter of a dielectric multilayer. For example, two kinds of thin films having significantly different refractive indexes, such as quartz and oxidized hafnium, are employed. About 100 layers of the above thin films are laminated alternately to constitute the bandpass filter 90. In view of a transmission wavelength range of quartz, the bandpass filter 90 preferably has a transmission wavelength range of 150 nm or longer, and more preferably has a transmission wavelength range from 180 nm to 700 nm, which corresponds to electron affinities of many organic semiconductors.
The photomultiplier 100 includes a photoelectric surface 101 of a photocathode or a photoelectric converter for converting incident light into electrons, a dynode 102 (or electron multiplier) for multiplying electrons through the secondary electron emission process, and an anode (not shown) for extracting the multiplied electrons to the outside, etc. On the photoelectric surface 101, a so-called photoelectric conversion material of the solar-blind type is applied. The photoelectric conversion material of the solar-blind type that is insusceptible to light having a wavelength in a visible light range. Examples of the photoelectric conversion material may include cesium iodide Cs—I which has sensitivity to light having a wavelength ranging from 115 nm to 200 nm, cesium tellurium CsTe which has sensitivity to light having a wavelength of 300 nm or less, and gallium nitride GaN which has sensitivity to light having a wavelength ranging from 200 nm to 370 nm. For such photoelectric conversion materials, the sensitivity to light having a wavelength of at least 400 nm or longer is zero, or negligibly small, When gallium nitride is used, the quantum efficiency (the number of photoelectrons emitted from the photoelectric surface 101/the number of incident photons) thereof is advantageously high (21.5% is obtained).
The photomultiplier 100 is connected to a power supply and a photon-counting circuit, which are not shown. The power supply is configured to supply a drive voltage to the photomultiplier 100. The photon-counting circuit may consist of an amplifier, a discriminator, and a multichannel analyzer (or counter), etc. The photon counting circuit is configured for measuring the number of photons in the, output of the photomultiplier 100 through a photon counting method. The photon-counting circuit is connected to an arithmetic device, which is not shown. The arithmetic device may consist of a CPU (Central Processing Unit) and a memory, etc. The arithmetic device is configured to normalize the number of photons outputted from the photon-counting circuit by the number of irradiated electrons (or current) with kinetic energy of the electron beam being continuously varied by the controller 34. This enables a spectrum (LEIPS spectrum) as a function of the kinetic energy of the electron beam. Alternatively; the number of non-normalized photons rimy be used as the LEIPS spectrum, which is obtained as a function of energy of the electron beam. The LEIPS spectrum corresponds to the density of states of an unoccupied state.
Further, the arithmetic device is configured to evaluate a difference between rising energy of the LEIPS spectrum and a vacuum level to determine the electron affinity of the sample 40, which is the minimum energy of an unoccupied state. The vacuum level may be determined through the following two wall-known methods. In the first method, current flowing through the sample 40 (or board) is plotted as a function of energy of the electron beam. The vacuum level can be defined as the sum of the center transmission energy value of the bandpass filter 90 and the energy value at an inflection point in the rising portion of the plotted current. In the second method, photoelectron spectrum of the sample 40 is measured to determine cutoff energy of secondary electrons in the spectrum. The vacuum level can be defined as the sum of the cutoff energy value and an energy value of excitation light.
Referring now to
In order to enhance a light capturing ability, the converging lens 160 is preferably disposed close to the sample 40 (distance P illustrated in the figure is reduced). On the other hand, when the aforementioned multilayer interference bandpass filter is used as the bandpass lifter 90, the light system is preferably arranged so that light is incident on the bandpass filter 90 as vertically as possible (typically, an incident angle may be within 5° or less) With reference to the incident surface in order to obtain sufficiently high resolution. In this case, a distance (denoted by Q in the figure) between the converging lens 160 and the bandpass filter 90 is preferably larger. In order to satisfy these demands, magnification Q/P of the image formed on the photoelectric surface 101 of the photomultiplier 100 will be increased, so that a large photoelectric surface is required.
In a sample, in particular an organic semiconductor, the surface of the sample may be easily charged or the sample may be easily damaged when current density is increased. When the surface is charged, energy of the electron beam to be radiated is increased, so that the obtained LEIPS spectrum is shifted or deformed. To prevent the sample from becoming charged or damaged, the electron beam is preferably widened or extended to reduce its current density with an amount of irradiation electrons maintained. The widened electron beam enlarges the image formed on the photoelectric surface 101 as described above, and consequently a large photoelectric surface is required.
The photomultiplier 100 having a large photoelectric surface 101 in turn. may increase a dark count and consequently background noise. Furthermore, the widened electron beam may decrease signal intensity.
On the other hand, the optical system according to an embodiment of the present invention shown in
Discussed next is the advantage derived from the photoelectric conversion material of the solar-blind type used for the photoelectric surface 101 of the photomultiplier 100. In the conventional LEIPS, to detect weak light (near-ultraviolet light) emitted from the sample, bialkali (Sb—K—Cs alloy), which has high sensitivity to near-ultraviolet light, is used as a photoelectric conversion material. However, the bialkali also has high sensitivity to visible light. Accordingly, in order to reduce the background noise, it may be required to sufficiently shield the apparatus from the light. This leads to the increase of the cost for the apparatus. The background noise may be reduced by the use of the handpass filter. It should be noted, however, that a handpass filter with a center transmission wavelength of 254 nm, for example, reportedly has a transmissivity 1% with respect to the light having a wavelength longer than 430 nm, which is in a visible light range. Further, if the shield is accidentally broken, a lifetime of a photomultiplier will be remarkably shortened, or in the worst case the photomultiplier may possibly break down.
Further, multilayer interference handpass filters having a center transmission wavelength in an ultraviolet region often allows light within a visible light range to transmit therethrough. As a result, the use of these handpass filters makes it difficult to observe light in an ultraviolet region.
Also, when yttrium oxide is used as the thermionic emission material liken. an embodiment of the present invention, due to the fact that the temperature of yttrium oxide during operation is higher than that of barium oxide, light having a wavelength hand is generated that is not generated when barium oxide is alternatively used. The light is subjected to photoelectric conversion by bialkali, and background noise may occur.
On the other hand, as exemplified in an embodiment of the present invention, the use of the photoelectric conversion material of the solar-blind type enables the following advantages. Since the photoelectric conversion material of the solar-blind type that is insusceptible to light having a wavelength of a visible light range; (1) the apparatus can be used with simple shielding; (2) a bandpass filter with a center transmission wavelength of an ultraviolet region can be used; and (3) background noise is not generated when yttrium oxide is used as a thermionic emission material.
Various modifications and improvement may be added to the aforementioned embodiments. The present invention is not limited to the embodiments. Modifications of the embodiments will be described.
In the embodiments, yttrium oxide is employed as the thermionic emission material of the cathode 10. If a solar-blind type photoelectric conversion material is used as the photoelectric surface 101 of the photomultiplier 100, similar advantages can be obtained when the Other metals or oxides, etc. (e.g., barium oxide, lanthanum hexaboride LaB6, tungsten W, tungsten rhenium alloy W—Re) are employed as the thermionic emission material. The cathode 10 is used as an example of the electron source. The cathode 10 may be an indirectly-heated cathode or a directly-heated cathode. The indirectly-heated cathode may include a cathode using barium oxide, lanthanum hexaboride, or yttrium oxide. The directly-heated cathode may include a cathode using tungsten W or tungsten rhenium alloy W—Re.
Further, in the embodiments, the bandpass filter 90 is used as the wavelength selector for extracting light having a certain wavelength (wavelength band) among the light generated in the sample 40, and the photomultiplier 100 is used as a photodetector for detecting the light extracted by the wavelength selector. A spectroscope and an exit slit referred to in Patent Document 1 and Non-Patent Document 3 may be used instead of the bandpass filter 90 to form the wavelength selector. Further, a spectroscope and a two-dimensional detector such as a CCD camera (or a one-dimensional detector such as a linear sensor) disclosed in Patent Document 1 and Non-Patent Document 4 may be used to form the Wavelength selector and the photodetector. Furthermore, as the photodetector, an image intensifier configured to detect and multiply photoelectrons two-dimensionally may be used instead of the photomultiplier 100, There is an image intensifier available with a photoelectric surface of the solar-blind type. Alternatively, semiconductor photodetector that is cooled by liquid nitrogen may be used, for example.
Further, the illustrated photomultiplier 100 has a head-on type structure having a so-called transmission type photoelectric surface 101, but may be a structure having a so-called reflection type photoelectric surface, or the illustrated photomultiplier 100 may have a side-on type structure.
Hereinafter, the present invention will be described in detail using examples (Experiments 1 to 4), but the present invention is not limited to the examples.
In Experiments 1 to 4, a self-made Erdman-Zipf type electron gun was used as the electron gun 30. A diameter of the aperture 23 was set to be 0.50 mm, and a distance between the cathode. 10 and the aperture 23 was set to be 1.0 mm. As described below, a disk of the yttrium. oxide cathode (ES-525 made by Kimball. Physics Inc.) has a diameter of 0.84 mm. Accordingly, the diameter of the aperture 23 is smaller than that of the disk. Further, current formed. by the electron beam irradiated with the sample 40 was set to be 1.0 μA or less. As the sample 40, a thin film of silver provided on a board was used (Experiments 1 and 2). Specifically, ITO (indium tin oxide) with a thickness of 10 nm was deposited on a silica glass board by sputtering, and a thin film of silver with a thickness of 10 nm was vacuum-evaporated thereon. A turbo-molecular pump with 500 L/s displacement was used in the step of depressurizing the vacuum chamber 50.
Experiment 1
A kinetic energy distribution of electrons emitted from the electron gun 30 was measured as a function of time. Accelerating voltage applied to the cathode 10 and bias voltage applied to the sample 40 were controlled to change kinetic, energy of electrons. Two types of thermionic emission materials were used to compare measurement results. Experimental conditions were as follows:
(a) the cathode 10 was a barium oxide cathode (ES-015 made by Kimball Physics Inc.), and pressure in the vacuum chamber 50 was 3.0×10−9) Torr (baking was performed at approximately 80° C. for 12 hours), and
(b) the cathode 10 was an yttrium oxide cathode ES-525 made by Kimball Physics Inc.), and the pressure in the vacuum chamber 50 was 1.5×10−8 Torr (without baking).
The results of Experiment 1 are shown in the graphs of
Experiment 2
Using the photomultiplier 100 of
the lens 60 was a quartz lens with a diameter of 50 mm and a focal distance of 100 mm;
the lens 70 was a quartz lens with a diameter of 25 mm and a focal distance of 30 mm;
the bandpass filter 90 had a center transmission wavelength of 254 nm and a half width of 0.23 eV (made by Semrock Inc. in USA); and
the photomultiplier 100 had a Cs—Te photoelectric surface (R821 made by Hamamatsu Photonics Inc.).
The result of Experiment 2 is shown in a graph of
Experiment 3
Using the inverse photoemission spectroscopy apparatus 1 of
It can be seen that the bialkali photoelectric surface has sensitivity to light having a wavelength ranging from 200 nm to 700 nm, while the Cs—Te photoelectric surface is substantially insusceptible to light having a wavelength longer than 300 nm.
The result of Experiment 3 is shown in the graph of
Experiment 4
Using the inverse photoemission spectroscopy apparatus 1 of
the lens 60 (160) was a quartz lens with a diameter of 25 mm and a focal distance of 25 mm;
the lens 70 was a quartz lens with a diameter of 25 mm and a focal distance of 30 mm; and
the photomultiplier 100 had a bialkali photoelectric surface (R585s made by Hamamatsu Photonics
The lenses 60 (160) and 70 were disposed so that a magnification Q/P=12 was satisfied in the optical system of
The result of Experiment 4 is shown in the graph of
In the aforementioned examples, a Stoffel-Johnson type electron gun can be alternatively used instead of the Erdman-Zipf type electron gun. Both types of electron guns will have similar results. Further, a handpass filter 90 made by Asahi spectrum Inc. can be used, which has results similar to aforementioned results.
According to the present invention, an inverse photoemission spectroscopy apparatus which is easy to handle is available at low cost. Accordingly, the present invention may be suitably used in the field of organic electronics. In particular, the present invention enables an accurate and easy measurement of a valence level and an unoccupied state energy. This promotes development of devices using an organic semiconductor, such as an organic thin film transistor and an organic thin film solar cell.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2014-111515 | May 2014 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2015/065197 | 5/27/2015 | WO | 00 |
