Claims
- 1. A semiconductor device comprising:a gate electrode formed on a semiconductor substrate via a gate insulating film; a first conductive type of body region formed so that the body region is adjacent to the gate electrode; a second conductive type of source region and a channel region respectively formed in the first conductive type of body region; a second conductive type of drain region formed in a position apart from the first conductive type of body region and a second conductive type of drift region formed so that the drift region surrounds the drain region, wherein the first conductive type of body region is extended up to the side of the drain region through an active region under the gate electrode; and a second conductive type of impurities layer is formed from the drain region up to near the active region.
- 2. A semiconductor device according to claim 1, wherein:the second conductive type of impurities layer is denser than the second conductive type of drift region; and the density of the second conductive type of impurities layer is lower than that of the second conductive type of drain region.
- 3. A semiconductor device according to claim 2, wherein said gate insulating film includes a first insulating film and a second insulating film of a selective oxide film which is thicker than said first insulating film, said gate electrode is formed extend over said first insulating film and said second insulating film and the impurity layer of said second conduction type is arranged to abut on the bottom of said second insulating film.
- 4. A semiconductor device according to claim 2, wherein said gate insulating film includes a first insulating film and a second insulating film of a selective oxide film which is thicker than said first insulating film, said gate electrode is formed extend over said first insulating film and said second insulating film and said impurity layer of the second conduction type is arranged to cover the bottom of said second insulating film.
- 5. A semiconductor device according to claim 4, wherein said impurity region of the second conduction type is arranged to cover the entire bottom of said second insulating film.
- 6. A semiconductor device according to claim 5, wherein said impurity layer of the second conduction type extends from said body region of the first conduction type and terminates at a position closer to the source from the edge of the gate insulating film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-11227 |
Apr 2000 |
JP |
|
Parent Case Info
This is a divisional application of U.S. application Ser. No. 09/789,055 filed Feb. 20, 2001now U.S. Pat. No. 6,399,468, which in turn claims the benefit of Japanese Application No. 2000-11227 filed Apr. 13, 2000.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
5777363 |
Malhi |
Jul 1998 |
A |
6211552 |
Efland et al. |
Apr 2001 |
B1 |
6424005 |
Tsai et al. |
Jul 2002 |
B1 |
6483149 |
Mosher et al. |
Nov 2002 |
B1 |
Foreign Referenced Citations (2)
Number |
Date |
Country |
2-156543 |
Jun 1990 |
JP |
4-25134 |
Jan 1992 |
JP |