Patent Application
20140356993
The disclosure relates to a method for manufacturing light-emitting device, and more particularly to a method for manufacturing a light-emitting device comprising a thick film.
This application claims the right of priority based on TW application Serial No. 102119720, filed on Jun. 3, 2013, and the content of which is hereby incorporated by reference in its entirety.
The principle of light emission of a light-emitting diode (LED) is different from that of an incandescent light. Besides, the junction temperature of a light-emitting diode (LED) is much lower than the filament temperature of an incandescent light, and therefore an LED is a cold light source. Furthermore, the Light-emitting diodes have advantages such as high durability, longer lifetime, lower power consumption and small size. As a result, the lighting market has high expectation of the light-emitting diodes becoming a new generation of lighting sources to gradually replace the conventional light sources, while the light-emitting diodes are applied to various fields such as traffic lights, back light modules, street lighting, and medical equipment.
a illustrates a conventional light-emitting device. As shown in
Besides, the light-emitting device 100 mentioned above is able to further combine with other elements to form a light-emitting apparatus as shown in
A method for manufacturing a light-emitting device, comprises the steps of: providing a carrier; performing a coating step comprises coating a film on the carrier; performing a baking step comprises baking the film at a first temperature; and forming a thick film by repeating the coating step and the baking step a predetermined number of times.
a illustrates a conventional light-emitting device;
b illustrates a conventional light-emitting apparatus;
a through 2g illustrate a light-emitting device during a manufacturing process in accordance with the first embodiment of the present application;
a through 3j illustrate a light-emitting device during a manufacturing process in accordance with the second embodiment of the present application; and
Exemplary embodiments of the present application will be described in detail with reference to the accompanying drawings hereafter. The following embodiments are given by way of illustration to help those skilled in the art fully understand the spirit of the present application. Hence, it should be noted that the present application is not limited to the embodiments herein and can be realized by various forms. Further, the drawings are not precise scale and components may be exaggerated in view of width, height, length, etc. Herein, the similar or identical reference numerals will denote the similar or identical components throughout the drawings.
a through 2g illustrate a light-emitting device during a manufacturing process in accordance with the first embodiment of the present application. The method for manufacturing the light-emitting device comprises the steps of: providing a first substrate 201, as shown in
Next, referring to
A film 102 is then formed on the dense layer 206. The film 102 comprises conductive nano-powders. In the present embodiment, the conductive nano-powders are formed by physical method or chemical method with targets made of indium tin oxide (ITO) or ZnO, wherein the physical method comprises rolling milling, vapor condensation or comminution, and wherein the chemical method comprises vapor deposition, precipitation, hydrothermal synthesis, sol-gel method or micro-emulsion. The film 102 further comprises a binder (not shown) for binding the conductive nano-powders together. The film 102 can be formed on the dense layer 206 by coating, wherein a method of coating comprises spin-coating or blade coating. In the present embodiment, a thickness of the film 102 ranges from 10 μm to 30 μm. Furthermore, the dense layer 206 is advantageous for enhancing adhesion between the film 102 and the light-emitting diode structure 205.
A step of baking the film 102 is then performed at a first temperature. After that, the step of forming the film 102 by coating and the step of baking the film 102 are repeated a predetermined number of times so as to form a thick film 103, wherein the predetermined number of times is at least 10 times or at least 20 times, as shown in
A material of the nano-powders may be the same or different from a material of the dense layer 206, wherein the material of the nano-powders comprises metal oxide, metal nitride, or GaP, wherein metal oxide comprises zinc oxide, indium oxide, tin oxide, indium tin oxide, indium zinc oxide, fluorine doped tin oxide, zinc aluminum oxide or gallium zinc oxide, wherein metal nitride comprises gallium nitride or aluminum nitride. Besides, a material of the binder comprises low-temperature glass or nano silicon dioxide, wherein the low-temperature glass herein is defined as a material having a glass transition temperature ranging from 75° C. to 150° C., and the nano silicon dioxide herein is defined as silicon dioxide grains or silicon dioxide powders having a size smaller than 100 nm.
The first substrate 201 is then removed to expose the first conductive type semiconductor layer 202 of the light-emitting diode structure 205, as shown in
a through 3j illustrate a light-emitting device during a manufacturing process in accordance with the second embodiment of the present application. The method for manufacturing the light-emitting device comprises the steps of: providing a first substrate 301, as shown in
Next, referring to
A film 402 is then formed on the dense layer 306. The film 402 comprises conductive nano-powders. In the present embodiment, the conductive nano-powders are formed by physical method or chemical method with targets made of indium tin oxide (ITO) sputtering target or ZnO target, wherein the physical method comprises rolling milling, vapor condensation or comminution, and the chemical method comprises vapor deposition, precipitation, hydrothermal synthesis, sol-gel method or micro-emulsion. The film 402 further comprises a binder (not shown) for binding the conductive nano-powders together. The film 402 can be formed on the dense layer 306 by coating, wherein a method of coating comprises spin-coating or blade coating. In the present embodiment, a thickness of the film 402 ranges from 10 μm to 30μm. Furthermore, the dense layer 306 is advantageous for enhancing adhesion between the film 402 and the light-emitting diode structure 305.
A step of baking the film 402 is then performed at a first temperature. After that, the step of forming the film 402 by coating and the step of baking the film 402 are repeated a predetermined number of times so as to form a thick film 403, wherein the predetermined number of times is at least 10 times or at least 20 times. Next, a pressure is applied to the thick film 403 at a second temperature, wherein the second temperature is higher than the first temperature. A thickness of the thick film 403 ranges from 100 μm to 600 μm, a transmittance of the thick film 403 ranges from 60% to 90% in the wavelength range of the light emitted from the light-emitting diode structure 305, and a resistivity of the thick film 403 ranges from 10−2 to 10−4 Ω/cm.
A material of the nano-powders may be the same or different from a material of the dense layer 306, wherein the material of the nano-powders comprises metal oxide, metal nitride, or GaP, wherein metal oxide comprises zinc oxide, indium oxide, tin oxide, indium tin oxide, indium zinc oxide, fluorine doped tin oxide, zinc aluminum oxide or gallium zinc oxide, wherein metal nitride comprises gallium nitride or aluminum nitride. Besides, a material of the binder comprises low-temperature glass or nano silicon dioxide, wherein the low-temperature glass herein is defined as a material having a glass transition temperature ranging from 75° C. to 150° C., and the nano silicon dioxide herein is defined as silicon dioxide grains or silicon dioxide powders having a size smaller than 100 nm. Referring to
Referring to
The first conductive type semiconductor layers 202, 302 and the second conductive type semiconductor layers 204, 304 as mentioned above are different in electricity, polarity or dopant, or are different in semiconductor materials used for providing electrons or holes respectively, wherein the semiconductor materials can be a single semiconductor material layer or multiple semiconductor material layers. As used herein, “multiple” is generally defined as two or more than two. The polarity can be chosen from any two of the group consisting of p-type, n-type and i-type. The active layers 203, 303, where the electrical energy and the light energy can be converted or stimulatively converted, is disposed between the first conductive type semiconductor layers 202, 302 and the second conductive type semiconductor layers 204, 304 as mentioned above. The light-emitting diode structures 205, 305 comprise a material comprising an element selected from the group consisting of: Ga, Al, In, As, P, N, Si, and the combinations thereof Preferably, the material can be AlGaInP series, III-nitride material system comprising AlGaInN series, or ZnO series. The structure of the active layer 203 can be single heterostructure (SH), double heterostructure (DH), double-side double heterostructure (DDH) or multi-quantum well (MQW) structure, wherein the wavelength of the light emitted from the active layer 203 can be changed by adjusting the number of MQW pairs.
The foregoing description of preferred and other embodiments in the present disclosure is not intended to limit or restrict the scope or applicability of the inventive concepts conceived by the Applicant. In exchange for disclosing the inventive concepts contained herein, the Applicant desires all patent rights afforded by the appended claims. Therefore, it is intended that the appended claims include all modifications and alterations to the full extent that they come within the scope of the following claims or the equivalents thereof.
| Number | Date | Country | Kind |
|---|---|---|---|
| 102119720 | Jun 2013 | TW | national |
