LOW-K DIELECTRIC LAYERS FOR LARGE SUBSTRATES

Abstract

A system and method for producing a film is described. One embodiment of the process includes the following processes: providing a substrate comprising a glass plate, electrodes; and bus bars; heating the substrate to an approximate critical temperature; initiating the chemical vapor deposition process when the substrate is near the approximate critical temperature, thereby depositing a film on the substrate; maintaining the upper portion of the film at approximately the critical temperature while the chemical vapor deposition process is ongoing; terminating the chemical vapor deposition process once the film has reached a desired thickness; and cooling the substrate and the deposited film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Various objects and advantages and a more complete understanding of the present invention are apparent and more readily appreciated by reference to the following Detailed Description and to the appended claims when taken in conjunction with the accompanying Drawings wherein:

FIG. 1 is a cross section of a typical plasma display panel constructed according to one embodiment of the present invention;

FIG. 2 is a cross section diagram of a plasma display panel portion constructed according to one embodiment of the present invention;

FIG. 3 is a chart of the surface temperature of the substrate and film surface when a dielectric layer is deposited according to the experimental, unsuccessful PECVD processes;

FIG. 4 is a cross section of a plasma display panel portion manufactured according to the unsuccessful, experimental PECVD processes;

FIG. 5 is a cross section of a dielectric layer applied according to conventional methods;

FIG. 6 is a chart of the surface temperature of the substrate and film when a dielectric is deposited using a PECVD process in accordance with one embodiment of the present invention;

FIG. 7A is a cross section of a plasma display panel portion constructed using the PECVD process according to one embodiment of the present invention;

FIG. 7B is a flow chart showing one method of depositing a low-K dielectric film in accordance with one embodiment of the present invention;

FIG. 8 is an enlargement of a portion of the plasma display panel illustrating pinch points caused by the PECVD process; and

FIG. 9 is a cross section of a plasma display panel that includes a planarization layer.

Claims

1. A method for depositing a dielectric layer using PECVD, the method comprising: heating a substrate approximately to a critical temperature, wherein the critical temperature corresponds to a precursor gas;introducing the precursor gas into a process chamber at approximately the time that the substrate is near the critical temperature;disassociating the precursor gas, thereby forming deposition material; anddepositing the deposition material to thereby form a film.

2. The method of claim 1, wherein the deposition material forms a top film layer of the dielectric layer, the method further comprising: maintaining the top film layer at approximately a constant temperature.

3. The method of claim 1, wherein the deposition material forms a top film layer of the dielectric layer, the method further comprising: maintaining the top film layer at approximately the critical temperature.

4. The method of claim 1, wherein the precursor gas comprises HMDSO.

5. The method of claim 1, wherein depositing the deposition material comprises: forming a film with a near uniform density throughout the film.

6. The method of claim 1, wherein depositing the deposition material comprises: forming a film with a dielectric constant near or below 5.

7. The method of claim 1, wherein preheating the substrate to near the critical temperature, comprises: preheating a portion of a plasma display panel.

8. The method of claim 1, further comprising: depositing a protective layer on the film, the protective layer providing a resistance to plasma.

9. The method of claim 8, wherein depositing the protective layer on the film comprises: using plasma enhanced chemical vapor deposition to deposit the protective layer.

10. The method of claim 1, wherein depositing the deposition material comprises: depositing the deposition material to thereby form a film approximately between 5 and 25 micrometers thick.

11. The method of claim 1, wherein depositing the deposition material comprises: depositing the deposition material to thereby form a film greater than 1 micrometer thick.

12. The method of claim 1, wherein depositing the deposition material comprises: depositing the deposition material to thereby form a film greater than 25 micrometers thick.

13. The method of claim 1, further comprising: depositing a planarization layer on the substrate;wherein depositing the deposition material comprises depositing the deposition material on the planarization layer.

14. The method of claim 1, further comprising: depositing a planarization layer on the film.

15. The method of claim 14, further comprising: depositing a protective layer on the planarization layer.

16. The method of claim 14, wherein depositing the planarization layer comprises: depositing a planarization layer less than 500 nanometers thick.

17. The method of claim 14, wherein depositing the planarization layer comprises: depositing through a silk screen, spin coating, or plasma process.

18. A method for creating a plasma display panel, the method comprising: providing a substrate comprising a glass plate, electrodes; and bus bars;heating the substrate to an approximate critical temperature;initiating the deposition process when the substrate is near the approximate critical temperature, thereby depositing a film;maintaining an upper portion of the film at approximately the critical temperature while the deposition process is ongoing;terminating the deposition process once the film has reached a desired thickness; andcooling the substrate and the deposited film.

19. The method of claim 18, wherein terminating comprises: terminating the deposition process when the film is greater than 5 micrometers thick.

20. The method of claim 18, wherein the deposited film has a dielectric constant less than 10.

21. The method of claim 18, further comprising: depositing a protective layer on the deposited film.

22. The method of claim 21, further comprising: dynamically depositing the protective layer on the deposited film.

23. The method of claim 18, further comprising: depositing a planarization layer on the substrate, wherein the film is deposited on the planarization layer.

24. The method of claim 18, further comprising: depositing a planarization layer on the film.

25. A plasma display panel portion comprising: a glass layer;a plurality of electrodes;a plurality of bus bars;a dielectric layer deposited using a plasma enhanced chemical vapor deposition process; anda protective layer.

26. The plasma display panel portion of claim 25, wherein the dielectric layer is greater than 5 micrometers thick.

27. The plasma display panel portion of claim 25, wherein the dielectric layer has a dielectric constant below approximately 5.

27. The plasma display panel portion of claim 25, wherein the dielectric layer has a dielectric constant below approximately 10.

28. The plasma display panel portion of claim 25, further comprising: a planarization layer between the glass layer and the dielectric layer.

29. The plasma display panel portion of claim 25, further comprising: a planarization layer between the dielectric layer and the protective layer.