Magnetoresistive effect element, magnetic head, and magnetic disk apparatus

Abstract

A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a magnetoresistive effect element according to a first embodiment of the present invention.

FIG. 2 is an enlarged view showing in enlargement the vicinity of a spacer layer, a current path in particular of FIG. 1.

FIG. 3 is a cross-sectional view showing a first comparative example of the present invention.

FIG. 4 is a cross-sectional view showing a second comparative example of the present invention.

FIG. 5 is a cross-sectional view showing a cross-section of an example of a spacer layer.

FIG. 6 is a top view showing a top face of the example of the spacer layer.

FIG. 7 is a bottom view showing a bottom face of the example of the spacer layer.

FIG. 8 is a cross-sectional view showing a cross-section of another example of a spacer layer.

FIG. 9 is a top view showing a top face of another example of the spacer layer.

FIG. 10 is a bottom view showing a bottom face of the another example of the spacer layer.

FIG. 11 is a view showing an example of a concentration distribution of Ni atoms in a free layer measured by a three-dimensional atom probe.

FIG. 12 is a view highlighting the concentration distribution of Ni atoms of FIG. 11.

FIG. 13 is a view showing an example of a concentration gradient of Ni atoms in the free layer.

FIG. 14 is a flowchart showing an example of manufacturing steps of a magnetoresistive effect element.

FIG. 15 is a schematic view showing an overview of a deposition apparatus used for manufacturing the magnetoresistive effect element.

FIG. 16 is a view showing a state that a magnetoresistive effect element according to an embodiment of the present invention is incorporated in a magnetic head.

FIG. 17 is a view showing a state that the magnetoresistive effect element according to the embodiment of the present invention is incorporated in the magnetic head.

FIG. 18 is a main part perspective view illustrating a schematic structure of a magnetic recording/reproducing apparatus.

FIG. 19 is an enlarged perspective view showing from a disk side a head gimbal assembly from an actuator arm to a tip thereof.

FIG. 20 is a view showing an example of a matrix structure of a magnetic memory according to an embodiment of the present invention.

FIG. 21 is a view showing another example of a matrix structure of a magnetic memory according to an embodiment of the present invention.

FIG. 22 is a cross-sectional view showing a main part of the magnetic memory according to the embodiment of the present invention.

FIG. 23 is a cross-sectional view taken along the A-A′ line in FIG. 22.

Claims

1. A magnetoresistive effect element, comprising: a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction;a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer; anda magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.

2. The magnetoresistive effect element according to claim 1, wherein the metal conductor and the first crystal grain are arranged vertically to correspond with each other.

3. The magnetoresistive effect element according to claim 2, wherein at least apart of the metal conductor is formed immediately below inside the range of 30 to 70 when a diameter of the second crystal grain is expressed by a relative value from 0 to 100.

4. The magnetoresistive effect element according to claim 2, wherein the first crystal grain, the metal conductor and the second crystal grain are arranged vertically to correspond with each other.

5. The magnetoresistive effect element according to claim 1, wherein the second crystal grain is smaller than the first crystal grain.

6. The magnetoresistive effect element according to claim 1, wherein a grain diameter of the second crystal grain is 3 nanometers or larger and 10 nanometers or smaller.

7. The magnetoresistive effect element according to claim 1, wherein a grain diameter of the first crystal grain is 5 nanometers or larger and 20 nanometers or smaller.

8. The magnetoresistive effect element according to claim 7, wherein a grain diameter of the second crystal grain is 3 nanometers or larger and 10 nanometers or smaller.

9. The magnetoresistive effect element according to claim 1, further comprising a first metal layer arranged between the magnetization free layer and the spacer layer, the first metal layer having a first component in common with the metal conductor.

10. The magnetoresistive effect element according to claim 9, wherein the first component has at least one of copper, gold, and silver.

11. The magnetoresistive effect element according to claim 10, wherein a film thickness of the first metal layer is 0.2 nanometer or larger and 1.5 nanometer or smaller.

12. The magnetoresistive effect element according to claim 1, further comprising a second metal layer arranged between the magnetization fixed layer and the spacer layer, the second metal layer having a second component in common with the metal conductor.

13. The magnetoresistive effect element according to claim 12, wherein the second component has at least one of copper, gold, and silver.

14. The magnetoresistive effect element according to claim 12, wherein a film thickness of the second metal layer is 0.1 nanometer or larger and 1.0 nanometer or smaller.

15. The magnetoresistive effect element according to claim 12, wherein the first metal layer is thicker than the second metal layer.

16. The magnetoresistive effect element according to claim 1, wherein the magnetization fixed layer includes an iron-cobalt layer having a body-centered cubic structure or a cobalt-iron layer having a face-centered cubic structure, and the magnetization free layer includes a cobalt-iron alloy layer.

17. The magnetoresistive effect element according to claim 1, wherein at least either of the magnetization fixed layer or the magnetization free layer has a crystal structure which is at least one of face-centered cubic (111) orientation, body-centered cubic (110) orientation, hexagonal close-packed (001) orientation, and hexagonal close-packed (110) orientation perpendicular to a film face thereof and has a dispersion angle of crystal orientation being 4.0 degrees or smaller.

18. The magnetoresistive effect element according to claim 1, wherein the metal conductor has a diameter of 2 nanometers or larger and 6 nanometers or smaller.

19. The magnetoresistive effect element according to claim 1, wherein the metal conductor has a crystal structure, and the insulating layer has an amorphous structure.

20. The magnetoresistive effect element according to claim 1, wherein the insulating layer has an oxide, a nitride, or an oxynitride which includes at least one kind of element selected from the group consisting of aluminum, silicon, hafnium, titanium, tantalum, molybdenum, tungsten, niobium, magnesium, chromium, and zirconium.

21. The magnetoresistive effect element according to claim 1, further comprising a pair of electrodes which passes a current from the magnetization fixed layer to the magnetization free layer.

22. A magnetic head comprising a magnetoresistive effect element according to claim 21.

23. A magnetic disk apparatus comprising a magnetic head according to claim 22.