Manufacturing method of semiconductor device, reticle correcting method, and reticle pattern data correcting method

Abstract

A manufacturing method of a semiconductor device including a pattern forming method, a reticle correcting method, and a reticle pattern data correcting method are disclosed. According to one aspect of the present invention, there is provided a manufacturing method of a semiconductor device, comprising forming a pattern composed of photosensitive resin film including forming periodically arranged first contact hole patterns of a first photosensitive resin film on a processing film formed above a semiconductor substrate, and forming a selective opening pattern of a second photosensitive resin film including various opening pattern types on the first photosensitive resin film, whereby selectively forming second contact hole patterns at positions of the first contact hole patterns selected by the selective opening patterns, wherein the first contact hole patterns have corrected dimensions such that dimensions of the second contact hole patterns become equivalent each other independent of the opening pattern types.

Description

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWING

FIGS. 1A and 1B are views for explaining a phenomena to form each contact hole having a desired arrangement by using two resist film layers;

FIGS. 2A to 2H are views for explaining examples of selective opening pattern types used in the present invention;

FIGS. 3A to 3C are views showing examples of light intensity distributions based on the selective opening pattern types used in the present invention;

FIGS. 4A to 4D are views for explaining formation of a single hole pattern according to a first embodiment of the present invention;

FIGS. 5A to 5D are views for explaining formation of contact hole patterns in a wide area opening region according to the first embodiment;

FIG. 6 is a process flowchart for explaining an example of a correcting method according to the first embodiment;

FIGS. 7A to 7C are views for explaining an example of a reticle pattern used in a modification of the first embodiment;

FIGS. 8A to 8E are views for explaining an example of a manufacturing process of the modification of the first embodiment;

FIGS. 9A to 9F are views for explaining the example of the manufacturing process of the modification of the first embodiment;

FIGS. 10A and 10B are views showing light intensity distributions on a wafer based on selective opening reticle pattern types for explaining a second embodiment according to the present invention;

FIG. 11 is a view showing a relationship between an irradiation light dose on a resist film and a dissolution rate of the resist film at the time of development;

FIG. 12 is a view showing a relationship between a selective opening pattern dimension and a light intensity of the selective opening pattern at a position corresponding to an edge of a contact hole pattern to be formed for explaining the second embodiment;

FIG. 13 is a view showing a light intensity distribution corrected with respect to the second embodiment;

FIG. 14 is a process flowchart for explaining an example of a correcting method according to the second embodiment;

FIGS. 15A to 15C are views showing light intensity distributions of opening patterns for explaining a third embodiment according to the present invention;

FIG. 16 is a process flowchart for explaining an example of a correcting method according to the third embodiment;

FIGS. 17A to 17F are views for explaining a fourth embodiment according to the present invention; and

FIG. 18 is a process flowchart for explaining an example of a correcting method according to the fourth embodiment.

Claims

1. A manufacturing method of a semiconductor device, comprising: forming a pattern composed of photosensitive resin film, forming a pattern including:forming periodically arranged first contact hole patterns composed of a first photosensitive resin film on a processing film formed above a semiconductor substrate; andforming a selective opening pattern composed of a second photosensitive resin film including a plurality of types of opening patterns on the first photosensitive resin film, whereby forming second contact hole patterns at positions of the plurality of first contact hole patterns selected by the selective opening pattern,wherein forming the first contact hole patterns includes forming the first contact hole patterns having dimensions corrected with respect to each of the plurality of types of opening patterns in such a manner that dimensions of the plurality of second contact hole patterns become equal to each other.

2. The manufacturing method of a semiconductor device according to claim 1, wherein the first contact hole pattern is constituted of two line-and-space patterns perpendicular to each other.

3. A manufacturing method of a semiconductor device, comprising: forming a pattern composed of photosensitive resin film, forming a pattern including:forming periodically arranged first contact hole patterns composed of a first photosensitive resin film on a processing film formed above a semiconductor substrate; andforming a selective opening pattern composed of a second photosensitive resin film including a plurality of types of opening patterns on the first photosensitive resin film, whereby forming second contact hole patterns at positions of the plurality of first contact hole patterns selected by the selective opening pattern,wherein forming the selective opening pattern includes correcting a total effective light dose applied to the second photosensitive resin film so as to become equal among the plurality of types of the opening patterns, andwherein the plurality of second contact hole patterns have the same dimension irrespective of the plurality of types of the opening patterns.

4. The manufacturing method of a semiconductor device according to claim 3, wherein the first contact hole pattern is constituted of two line-and-space patterns perpendicular to each other.

5. The manufacturing method of a semiconductor device according to claim 3, wherein correcting the total effective light dose applied to the second photosensitive resin film includes correcting a dimension of the selective opening reticle pattern formed on a selective opening reticle used to form the selective opening pattern with respect to each of the plurality of types of the opening patterns.

6. The manufacturing method of a semiconductor device according to claim 3, wherein correcting the total effective light dose applied to the second photosensitive resin film includes performing multi-exposure by using a selective opening reticle pattern utilized to form the selective opening pattern and an auxiliary opening reticle pattern corresponding to each of the plurality of types of the opening patterns.

7. The manufacturing method of a semiconductor device according to claim 6, wherein an opening dimension of the auxiliary reticle pattern is smaller than an opening dimension of corresponding selective opening reticle pattern.

8. The manufacturing method of a semiconductor device according to claim 3, wherein correcting the total effective light dose applied to the second photosensitive resin film includes correcting a transmittance of the selective opening reticle pattern formed on a selective opening reticle used to form the selective opening pattern with respect to each of the plurality of types of the opening patterns.

9. The manufacturing method of a semiconductor device according to claim 3, wherein correcting the total effective light dose applied to the second photosensitive resin includes correcting minimum total effective light dose at an edge of the second contact hole pattern in each of the plurality of types of the opening patterns to be equal.

10. The manufacturing method of a semiconductor device according to claim 9, wherein correcting the total effective light dose applied to the second photosensitive resin film includes correcting a dimension of the selective opening reticle pattern formed on a selective opening reticle used to form the selective opening pattern with respect to each of the plurality of types of the opening patterns.

11. The manufacturing method of a semiconductor device according to claim 9, wherein correcting the total effective light dose applied to the second photosensitive resin film includes performing multi-exposure by using a selective opening reticle pattern utilized to form the selective opening pattern and an auxiliary opening reticle pattern corresponding to each of the plurality of types of the opening patterns.

12. The manufacturing method of a semiconductor device according to claim 11, wherein an opening dimension of the auxiliary reticle pattern is smaller than an opening dimension of corresponding selective opening reticle pattern.

13. The manufacturing method of a semiconductor device according to claim 9, wherein correcting the total effective light dose applied to the second photosensitive resin film includes correcting a transmittance of the selective opening reticle pattern formed on a selective opening reticle used to form the selective opening pattern with respect to each of the plurality of types of the opening patterns.

14. A reticle correcting method of forming a pattern, comprising: using a first reticle including a contact hole reticle pattern to form a plurality of periodically arranged first contact hole patterns composed of a first photosensitive resin film on a processing film formed above a semiconductor substrate; andusing a second reticle including a selective opening reticle pattern to selectively form a selective opening pattern composed of a second photosensitive resin film formed on the first photosensitive resin film and including a plurality of types of opening patterns so as to form a plurality of second contact hole patterns at positions corresponding to the plurality of first contact hole patterns selected by the selective opening patterns,wherein the contact hole reticle pattern or the selective opening reticle pattern is corrected with respect to each of the plurality of types of the selective opening patterns in such a manner that the plurality of second contact hole patterns are formed to have the same dimension.

15. The reticle correcting method according to claim 14, wherein correcting the selective opening reticle pattern includes correcting a dimension of the selective opening reticle pattern with respect to each of the plurality of types of selective opening patterns in such a manner that a minimum total effective light dose at an edge of the second contact hole pattern in each of the plurality of types of the opening patterns is to be equal among the plurality of types of the opening patterns.

16. The reticle correcting method according to claim 14, wherein correcting the selective opening reticle pattern includes correcting a transmittance of the selective opening reticle pattern with respect to each of the plurality of types of the opening patterns in such a manner that a minimum total effective light dose at an edge of the second contact hole pattern in each of the plurality of types of the opening patterns is to be equal among each of the plurality of types of the opening patterns.

17. A reticle pattern data correcting method comprising: creating a test opening reticle having a plurality of types of opening reticle patterns that changes a light intensity of each of opening patterns on a photosensitive resin film and used to form the opening patterns to the photosensitive resin film;forming periodically arranged first contact hole patterns composed of a first photosensitive resin film on a processing film formed above a semiconductor substrate;forming a selective opening pattern composed of a second photosensitive resin film formed on the first photosensitive resin film by forming a plurality of types of opening patterns with different light intensities on the second photosensitive resin film with respect to each of the plurality of types of the opening reticle patterns using the test opening reticle, whereby forming a plurality of second contact hole patterns having different dimensions at positions corresponding to the plurality of the first contact hole patterns selected by the selective opening pattern;measuring dimensions of the formed second contact hole patterns;determining a second contact hole pattern with a dimension equal to a designed contact hole dimension with respect to each of the plurality of types of the opening patterns;determining an opening reticle pattern corresponding to the determined second contact hole pattern with respect to each of the plurality of types of opening patterns; andcorrecting opening reticle pattern data based on the determined opening reticle patterns.

18. The reticle pattern data correcting method according to claim 17, wherein changing the light intensity includes changing a dimension of each of the opening reticle patterns.

19. The reticle pattern data correcting method according to claim 17, wherein changing the light intensity includes changing a transmittance of each of the opening reticle patterns.

20. The reticle pattern data correcting method according to claim 17, wherein changing the light intensity includes using an auxiliary opening reticle pattern to perform multi-exposure.