Manufacturing method of semiconductor device

Abstract

Size of a chipping is made small, suppressing blinding of a blade, when performing dicing of a wafer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of the wafer after forming an element etc. on a silicon substrate;

FIG. 2 is a cross-sectional view of the wafer after forming an element etc. on a silicon substrate;

FIG. 3 is the cross-sectional view after sticking a wafer on a dicing tape;

FIG. 4 is a cross-sectional view at the time of cutting the front surface of a wafer;

FIG. 5 is a cross-sectional view of the groove formed in the wafer surface;

FIG. 6 is a drawing showing the section of the point of a blade;

FIG. 7 is a drawing showing the definition of the form of the point of a blade;

FIG. 8 is a cross-sectional view at the time of cutting the front surface of a wafer;

FIG. 9 is a cross-sectional view of the groove formed in the wafer surface;

FIG. 10 is a cross-sectional view at the time of cutting the front surface of a wafer;

FIG. 11 is a cross-sectional view of the groove formed in the wafer surface;

FIG. 12 is a cross-sectional view at the time of cutting a wafer using a V character-shaped blade;

FIG. 13 is a seeing-through perspective view of the blade of FIG. 12;

FIG. 14 is a cross-sectional view at the time of cutting a wafer using a flat-shaped blade;

FIG. 15 is a seeing-through perspective view of the blade of FIG. 14;

FIG. 16 is a cross-sectional view when the particle diameter of the abrasive particle included in a blade is large;

FIG. 17 is a cross-sectional view when the particle diameter of the abrasive particle included in a blade is small;

FIG. 18 is a drawing showing the mesh which distributes an abrasive particle;

FIG. 19 is a drawing showing the point of a V character-shaped blade;

FIG. 20 is a seeing-through perspective view of a blade when slitting to a wafer is shallow;

FIG. 21 is a seeing-through perspective view of a blade when slitting to a wafer is deep;

FIG. 22 is a cross-sectional view of FIG. 20 and FIG. 21;

FIG. 23 is a cross-sectional view at the time of doing full cutting of the wafer;

FIG. 24 is the cross-sectional view after doing full cutting of the wafer;

FIG. 25 is a process flow picture until it performs shipment from a dicing step;

FIG. 26 is a cross-sectional view at the time of peeling a dicing tape;

FIG. 27 is a plan view of a wiring substrate;

FIG. 28 is a cross-sectional view of a wiring substrate;

FIG. 29 is the cross-sectional view after sticking a die bond film on a wiring substrate;

FIG. 30 is the cross-sectional view after doing the wire bond of the semiconductor chip on a wiring substrate;

FIG. 31 is the cross-sectional view after doing the sealing resin of the semiconductor chip; and

FIG. 32 is a cross-sectional view of the completed semiconductor device.

Claims

1. A manufacturing method of a semiconductor device which cuts a substrate with a blade, comprising a first step of: making a portion of a V character-shaped shoulder enter into an inside rather than the substrate front surface and cutting the substrate, using the V character-shaped first blade whose width of a flat surface of a point of a section vertical to a direction of movement is 40% or less of blade width, and whose fineness number of an abrasive particle is more than #3000.

2. A manufacturing method of a semiconductor device according to claim 1, wherein the first step is a half cutting step which forms a groove in a front surface of the substrate.

3. A manufacturing method of a semiconductor device according to claim 2, wherein after the half cutting step, a full cutting step which cuts a bottom of the groove until the substrate penetrates is performed using a second blade.

4. A manufacturing method of a semiconductor device according to claim 3, wherein a width of the second blade is smaller than a width of the first blade.

5. A manufacturing method of a semiconductor device according to claim 4, wherein a width of the second blade is larger than a width of the flat surface.

6. A manufacturing method of a semiconductor device according to claim 4, wherein a fineness number of an abrasive particle of the second blade is smaller than a fineness number of an abrasive particle of the first blade.

7. A manufacturing method of a semiconductor device according to claim 1, wherein the first blade is a metal-bond blade which combined an abrasive particle by using metal as a bond.

8. A manufacturing method of a semiconductor device according to claim 1, wherein over the substrate, a low dielectric constant film whose relative dielectric constant is lower than a silicon oxide film is formed.

9. A manufacturing method of a semiconductor device according to claim 1, wherein a metal wiring is formed in a region to which the substrate is cut.