Mask data generation method and mask

Abstract

In a mask data generation method, when auxiliary patterns are arranged with respect to a device pattern, an arrangement rule for a tip of the device pattern is designed to be different from that for other portions. For portions that are corrected to a large extent by an OPC process, such as the tip of the device pattern, an auxiliary pattern is spaced at an increased distance from the device pattern. Specifically, a distance at which an auxiliary pattern is spaced from the tip of the device pattern is set to be longer than a distance at which an auxiliary pattern is spaced from a long side of the device pattern.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a pattern diagram showing a line pattern and an OPC pattern;

FIG. 2 is a pattern diagram showing a line pattern subjected to an OPC process in a state such that auxiliary patterns are spaced at 120 nm from the line pattern;

FIG. 3 is a graph showing a light intensity distribution on line X in a case where an OPC process was performed in a state such that auxiliary patterns were spaced at 120 nm from a line pattern having a width of 180 nm;

FIG. 4 is a graph showing a light intensity distribution on line X in a case where an OPC process was performed in a state such that an auxiliary pattern was spaced at 120 nm from a short side of a line pattern having a width of 220 nm;

FIG. 5 is a pattern diagram showing a line pattern subjected to an OPC process in a state such that an auxiliary pattern is spaced at 150 nm from a short side of the line pattern, which has a width of 120 nm;

FIG. 6 is a graph showing a light intensity distribution on line X in a case where an OPC process was performed in a state such that auxiliary patterns were spaced at 120 nm from a line pattern having a width of 120 nm;

FIG. 7 is a graph showing a light intensity distribution on line X in a case where an OPC process was performed in a state such that an auxiliary pattern was spaced at 150 nm from a short side of a line pattern having a width of 120 nm;

FIG. 8 is a pattern diagram showing a slit pattern and auxiliary patterns;

FIG. 9 is a pattern diagram showing auxiliary patterns and an OPC pattern arranged with respect to a slit pattern;

FIG. 10 is a graph showing a light intensity distribution on line X in a case where an OPC process was performed in a state such that an auxiliary pattern was spaced at 145 nm from a short side of a slit pattern; and

FIG. 11 is a graph showing a light intensity distribution on line X in a case where an OPC process was performed in a state such that an auxiliary pattern was spaced at 115 nm from a short side of a slit pattern.

Claims

1. A mask data generation method, comprising: arranging first and second auxiliary patterns adjacent to a device pattern, andperforming an OPC process,wherein a first distance at which the first auxiliary pattern is spaced from a short side of the device pattern is set to be longer than a second distance at which the second auxiliary pattern is spaced from a long side of the device pattern upon arranging auxiliary patterns.

2. The mask data generation method according to claim 1, wherein: the first distance varies depending upon a dimension of the short side of the device pattern.

3. The mask data generation method according to claim 1, wherein: the first distance is predetermined with a table lookup method by a dimension of the short side of the device pattern.

4. The mask data generation method according to claim 1, wherein: the first distance falls within a range from a minimum dimension to 1.6 times the minimum dimension.

5. The mask data generation method according to claim 1, wherein: the auxiliary pattern spaced from the short side of the device pattern is located a minimum separation dimension away from a position of an OPC pattern obtained by an OPC process without the auxiliary patterns.

6. A mask produced by the mask data generation method according to claim 1.

7. A mask produced by the mask data generation method according to claim 2.

8. A mask produced by the mask data generation method according to claim 3.

9. A mask produced by the mask data generation method according to claim 4.

10. A mask produced by the mask data generation method according to claim 5.