for preventing surface leakage or controlling electric field concentration

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CPC
H01L29/0607

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0607for preventing surface leakage or controlling electric field concentration

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device
- Patent number 12,294,021
- Issue date May 6, 2025
- Kioxia Corporation
- Tomonori Kajino
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having capping layers with different germanium...
- Patent number 12,278,271
- Issue date Apr 15, 2025
- Samsung Electronics Co., Ltd.
- Dahye Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,266,711
- Issue date Apr 1, 2025
- SK Hynix Inc.
- Beom-Yong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor and method for forming same
- Patent number 12,255,252
- Issue date Mar 18, 2025
- Robert Bosch GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method for fabricating the same
- Patent number 12,249,620
- Issue date Mar 11, 2025
- Hyundai Motor Company
- Jong Seok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,218,189
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,213,309
- Issue date Jan 28, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Gongyi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate oxide layer
- Patent number 12,211,915
- Issue date Jan 28, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor packaging and manufacturing method thereof
- Patent number 12,183,781
- Issue date Dec 31, 2024
- Diodes Incorporated
- Chih-Hsiang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell structure and semiconductor device using same
- Patent number 12,183,813
- Issue date Dec 31, 2024
- Nanjing Sinnopower Technology Co., Ltd.
- Wenfang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor structure and manufacturing method
- Patent number 12,166,070
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jifeng Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,928
- Issue date Dec 3, 2024
- Fuji Electric Co., Ltd.
- Shigeki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,148,792
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single chip power diode and method of producing a single chip power...
- Patent number 12,132,122
- Issue date Oct 29, 2024
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with leakage current guide path and method for...
- Patent number 12,100,733
- Issue date Sep 24, 2024
- NANYA TECHNOLOGY CORPORATION
- Wei-Zhong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device having a barrier layer wit...
- Patent number 12,100,756
- Issue date Sep 24, 2024
- United Microelectronics Corp.
- Hao-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 12,100,732
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Hsu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low leakage FET
- Patent number 12,100,734
- Issue date Sep 24, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,094,945
- Issue date Sep 17, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Daejoong Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and system
- Patent number 12,094,960
- Issue date Sep 17, 2024
- Fuji Electric Co., Ltd.
- Shigeki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,823
- Issue date Sep 10, 2024
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure
- Patent number 12,087,635
- Issue date Sep 10, 2024
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with enhanced substrate isolation
- Patent number 12,080,799
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Sohyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 12,075,611
- Issue date Aug 27, 2024
- Samsung Electronics Co., Ltd.
- Wonsok Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making triple well isolated diode
- Patent number 12,074,208
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,074,194
- Issue date Aug 27, 2024
- Kabushiki Kaisha Toshiba
- Kanako Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, communication module, and semiconductor devic...
- Patent number 12,068,407
- Issue date Aug 20, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Katsuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor module
- Patent number 12,068,404
- Issue date Aug 20, 2024
- Fuji Electric Co., Ltd.
- Atsushi Shoji
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low Leakage FET
- Publication number 20250072062
- Publication date Feb 27, 2025
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF SWITCH DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250062253
- Publication date Feb 20, 2025
- DB HiTek Co., Ltd.
- Ja Geon KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD
- Publication number 20250056846
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANU...
- Publication number 20250056834
- Publication date Feb 13, 2025
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND CELL DATA GENERATING SYSTEM
- Publication number 20250048692
- Publication date Feb 6, 2025
- MINEBEA POWER SEMICONDUCTOR DEVICE INC.
- Takeru SUTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACT...
- Publication number 20250038062
- Publication date Jan 30, 2025
- Enkris Semiconductor (Wuxi), Ltd.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE SEMICONDUCTOR TRANSISTORS
- Publication number 20250015181
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250006834
- Publication date Jan 2, 2025
- Vanguard International Semiconductor Corporation
- Wen-Shan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE REDUCTION FOR CONTINUOUS ACTIVE DESIGNS
- Publication number 20240421182
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Jason J Stuffle
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES WITH A CURRENT GAIN LAYOUT
- Publication number 20240413195
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Takashi Ishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION STRUCTURES FOR MOSFETS
- Publication number 20240413196
- Publication date Dec 12, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Sauvik CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240405126
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Huan HSIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240405063
- Publication date Dec 5, 2024
- ENKRIS SEMICONDUCTOR (WUXI), LTD.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LEAKAGE CURRENT GUIDE PATH AND METHOD FOR...
- Publication number 20240405064
- Publication date Dec 5, 2024
- NANYA TECHNOLOGY CORPORATION
- WEI-ZHONG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20240404967
- Publication date Dec 5, 2024
- ENKRIS SEMICONDUCTOR (WUXI), LTD.
- Guoqiao TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240395919
- Publication date Nov 28, 2024
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE TRAP CHARGE DENSITY REDUCTION
- Publication number 20240387274
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...
- Publication number 20240379740
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Wei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379843
- Publication date Nov 14, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yi-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHE...
- Publication number 20240379663
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER F...
- Publication number 20240379838
- Publication date Nov 14, 2024
- MaxPower Semiconductor, Inc.
- Mohamed Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...
- Publication number 20240371924
- Publication date Nov 7, 2024
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20240371925
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei HSU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEHTOD OF MAKING TRIPLE WELL ISOLATED DIODE AND TRIPLE WELL ISOLATE...
- Publication number 20240371966
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240372012
- Publication date Nov 7, 2024
- Rohm Co., Ltd.
- Masatoshi Aketa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240363688
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-FREQUENCY GROUP III-NITRIDE-BASED HIGH ELECTRON MOBILITY TRANS...
- Publication number 20240363745
- Publication date Oct 31, 2024
- Wisconsin Alumni Research Foundation
- Chirag Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240363430
- Publication date Oct 31, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Yi Wang
- H01 - BASIC ELECTRIC ELEMENTS

for preventing surface leakage or controlling electric field concentration

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device

Semiconductor device having capping layers with different germanium...

Semiconductor device and method for fabricating the same

Vertical field-effect transistor and method for forming same

Power semiconductor device and method for fabricating the same

Semiconductor device and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Semiconductor device including gate oxide layer

Reducing off-state leakage in semiconductor devices

Power semiconductor packaging and manufacturing method thereof

Cell structure and semiconductor device using same

Semiconductor transistor structure and manufacturing method

Gallium nitride transistor with a doped region

Semiconductor device

Structure and formation method of semiconductor device structure wi...

Single chip power diode and method of producing a single chip power...

Semiconductor device with leakage current guide path and method for...

High electron mobility transistor device having a barrier layer wit...

Semiconductor device and method of manufacturing same

Low leakage FET

Semiconductor structure and forming method thereof

Semiconductor device and system

Semiconductor device

Transistor structure

Semiconductor devices with enhanced substrate isolation

Semiconductor memory device

Method of making triple well isolated diode

Semiconductor device

Semiconductor device, communication module, and semiconductor devic...

Semiconductor device and semiconductor module

Patents Applicationslast 30 patents

Low Leakage FET

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

RF SWITCH DEVICE AND MANUFACTURING METHOD THEREOF

TRANSISTOR DEVICE AND METHOD

P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANU...

POWER SEMICONDUCTOR DEVICE AND CELL DATA GENERATING SYSTEM

SUBSTRATE STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACT...

METAL-OXIDE SEMICONDUCTOR TRANSISTORS

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

LEAKAGE REDUCTION FOR CONTINUOUS ACTIVE DESIGNS

SEMICONDUCTOR DEVICES WITH A CURRENT GAIN LAYOUT

TERMINATION STRUCTURES FOR MOSFETS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE WITH LEAKAGE CURRENT GUIDE PATH AND METHOD FOR...

MONOLITHICALLY INTEGRATED SEMICONDUCTOR DEVICE STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

INTERFACE TRAP CHARGE DENSITY REDUCTION

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHE...

VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER F...

ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

MEHTOD OF MAKING TRIPLE WELL ISOLATED DIODE AND TRIPLE WELL ISOLATE...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

HIGH-FREQUENCY GROUP III-NITRIDE-BASED HIGH ELECTRON MOBILITY TRANS...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME