Claims
- 1. A method of making a supported mask that may be used in modifying a substrate, comprising:obtaining a support that is not the substrate; applying at least one layer of dielectric material to said support; and exposing said layer to patterned light to substantially cause removal of said layer from said support in exposed areas, herein the exposing causes ablating of the exposed areas of the layer.
- 2. The method as in claim 1 wherein the patterned light is UV light from a laser.
CROSS REFERENCE TO RELATED APPLICATIONS
This is a divisional of U.S. patent application Ser. No. 09/055,183, filed Apr. 3, 1998, now U.S. Pat. No. 6,027,630; which in turn claims priority to U.S. Provisional Application No. 60/043,742 filed on Apr. 3, 1997.
US Referenced Citations (10)
Foreign Referenced Citations (4)
Number |
Date |
Country |
59-191356 |
Oct 1984 |
JP |
04-318187 |
Nov 1992 |
JP |
07-022425 |
Jan 1995 |
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8-21567 |
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/043742 |
Apr 1997 |
US |